Vishay VS-VSK.166..PbF Series, VS-VSK.196..PbF Series, VS-VSK.236..PbF Series Data Sheet

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series

INT-A-PAK

Standard Recovery Diodes, 165 A to 230 A

(INT-A-PAK Power Modules)

PRODUCT SUMMARY

F(AV)

Type Modules - Diode, High Voltage

Package INT-A-PAK

Circuit

Single diode, Two diodes common cathode,

Two diodes common cathode, Two diodes

165 A to 230 A

doubler circuit

Vishay Semiconductors

FEATURES

• High voltage

• Electrically isolated by DBC ceramic (AI

• 3500 V

isolating voltage

RMS

• Industrial standard package

• High surge capability

• Glass passivated chips

• Modules uses high voltage power diodes in four basic configurations

• Simple mounting

• UL approved file E78996

• Designed and qualified for multiple level

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• DC motor control and drives

• Battery chargers

• Welders

• Power converters

2O3

)

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.166.. VSK.196.. VSK.236.. UNITS

F(AV)

F(RMS)

FSM

t 798 1130 1516 kA2s

RRM

50 Hz 4000 4750 5500

60 Hz 4200 4980 5765

50 Hz 80 113 151

60 Hz 73 103 138

Range -40 to +150 °C

165 195 230 A

100 100 100 °C

260 305 360

400 to 1600 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-VSK.166 VS-VSK.196 VS-VSK.236

, MAXIMUM REPETITIVE PEAK

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

RRM

REVERSE VOLTAGE

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

kA2s

RRM

AT 150 °C

Revision: 02-Apr-15

Document Number: 94357

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series

Vishay Semiconductors

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VSK.166 VSK.196 VSK.236 UNITS

Maximum average on-state  current at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle on-state, non-repetitive  surge current

Maximum I

t for fusing I2t

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 798 1130 1516 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V Low level value on-state

slope resistance High level value on-state

Maximum forward voltage drop V

F(AV)

F(RMS)

FSM

F(TO)1

F(TO)2

180° conduction, half sine wave

t = 10 ms

t = 8.3 ms 4200 4980 5765

t = 10 ms

t = 8.3 ms 3500 4200 4850

t = 10 ms

t = 8.3 ms 73 103 138

t = 10 ms

t = 8.3 ms 52 73 98

(16.7 % x  x I (I >  x I

(16.7 % x  x I

(I >  x I

IFM =  x I Average power = V

No voltage reapplied

100 % V reapplied

No voltage reapplied

100 % V

RRM



Sine half wave, initial T

=

maximum

reapplied

< I <  x I

F(AV)

), TJ maximum 0.88 0.78 0.83

F(AV)

< I <  x I

F(AV)

), TJ maximum 1.26 1.2 1.07

F(AV)

, TJ = 25 °C, 180° conduction

F(AV)

F(TO)

), TJ maximum 0.73 0.69 0.7

F(AV)

), TJ maximum 1.5 1.3 1.2

F(AV)

x I

+ rf x (I

F(AV)

F(RMS)

165 195 230 A

100 100 100 °C

260 305 360

4000 4750 5500

3350 4000 4630

80 113 151

56 80 107

1.43 1.38 1.46 V

)

kA2s

m

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VSK.166 VSK.196 VSK.236 UNITS

Maximum peak reverse and off-state leakage current

RMS insulation voltage V

RRM

INS

TJ = 150 °C 20 mA

50 Hz, circuit to base, all terminals shorted, t = 1 s

3500 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating and storage temperature range

Maximum thermal resistance, junction to case per junction

Maximum thermal resistance, case to heatsink per module

Mounting torque ± 10 %

IAP to heatsink

busbar to IAP

, T

Stg

thJC

thCS

DC operation 0.2 0.16 0.14

Mounting surface smooth, flat and greased 0.05

A mounting compound is recommended and the torque should be rechecked after a period

VSK.166 VSK.196 VSK.236

of 3 hours to allow for the spread of

Approximate weight

the compound. Lubricated threads.

Case style INT-A-PAK

VALUES

UNITS

-40 to +150 °C

K/W

4 to 6 Nm

200 g

7.1 oz.

Revision: 02-Apr-15

Document Number: 94357

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series

130

140

150

120

110

100

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

50 100

150 200 250 300

30°

60°

90°

120°

180°

VSK.166.. Series R

thJC

(DC) = 0.20 K/W

Conduction period

200

150

100

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

10050 150 200

250 300

DC 180° 120°

90°

60°

30°

RMS limit

VSK.166.. Series Per junction T

= 150 °C

Conduction period

250

300

Vishay Semiconductors

R CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION

MAXIMUM

AT T

DEVICES

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSK.166 0.025 0.03 0.038 0.055 0.089 0.018 0.031 0.041 0.057 0.089

VSK.236 0.009 0.010 0.014 0.018 0.025 0.008 0.012 0.015 0.019 0.025

Note

• Table shows the increment of thermal resistance R



when devices operate at different conduction angles than DC

thJC



RECTANGULAR CONDUCTION

AT TJ MAXIMUM

UNITS

K/WVSK.196 0.016 0.019 0.024 0.034 0.053 0.012 0.02 0.026 0.035 0.054

150

140

130

120

110

100

Temperature (°C)

Maximum Allowable Case

30°

40 80 120 160

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

VSK.166.. Series R

(DC) = 0.20 K/W

thJC

Conduction angle

60°

90°

120°

180°

200

250

200

150

100

180° 120°

90° 60° 30°

RMS limit

Power Loss (W)

Maximum Average Forward

Average Forward Current (A)

8040 120 160

Fig. 3 - On-State Power Loss Characteristics

Conduction angle

VSK.166.. Series

= 150 °C

200

Fig. 2 - Current Ratings Characteristics

Revision: 02-Apr-15

Fig. 4 - On-State Power Loss Characteristics

Document Number: 94357

VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series

500

4000

3500

3000

2500

2000

1500

1000

Peak Half Sine Wave

Forward Current (A)

Pulse Train Duration (s)

0.1

0.01

Maximum non-repetitive surge current

Initial TJ = 150 °C

No voltage reapplied Rated V

RRM

reapplied

versus pulse train duration.

VSK.166.. Series

100

150

200

250

300

Maximum Total Forward

Power Loss (W)

Total RMS Output Current (A)

50 100 150 200

250

VSK.166.. Series

Per junction

= 150 °C

1200

1800

Maximum Total Power Loss (W)

Total Output Current (A)

180°

(Sine)

180°

(Rect)

2 x VSK.166.. Series

Single phase bridge

Connected

= 150 °C

1600

1400

1000

800

600

400

200

100

200

300

400

500

Vishay Semiconductors

4000

3500

3000

2500

2000

Forward Current (A)

Peak Half Sine Wave

1500

1000

At any rated load condition and with

rated V

VSK.166.. Series

Number of Equal Amplitude Half

applied following surge.

RRM

Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s

10 1001

Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

300

250

200

150

0.4 K/W

0.5 K/W

0.7 K/W

0.3 K/W

0.2 K/W

thSA

= 0.12 K/W - ΔR

Revision: 02-Apr-15

100

Power Loss (W)

Maximum Total Forward

25 50 75 100 125

150

Maximum Allowable Ambient Temperature (°C)

Fig. 7 - On-State Power Loss Characteristics

1800

1600

1400

1200

1000

800

600

400

200

Maximum Total Power Loss (W)

thSA

= 0.12 K/W - ΔR

0.04 K/W

0.06 K/W

0.1 K/W

0.16 K/W

0.25 K/W

0.5 K/W

25 50 75 100 125

150

Maximum Allowable Ambient Temperature (°C)

Fig. 8 - On-State Power Loss Characteristics

Document Number: 94357

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