VS-T20HF220
Vishay Semiconductors
Power Rectifier Diodes (T-Modules), 2200 V, 20 A
FEATURES
• Electrically isolated base plate
D-55
• 2200 V
• Industrial standard packaging
• UL approved file E78996
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
RRM
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
I
F(AV)
Type Modules - Diode, High Voltage
V
RRM
Package D-55
Circuit Single diodes
20 A
2200 V
DESCRIPTION
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls, and solar panel application.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS T20HF UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
2
I
t 10 125 A2s
V
RRM
T
J
T
C
50 Hz 450
60 Hz 470
50 Hz 1015
60 Hz 920
20 A
85 °C
31
A
A2s
2200 V
- 40 to 150 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM REPETITIVE
V
TYPE
NUMBER
VOLTAGE
CODE
RRM
PEAK REVERSE VOLTAGE
V
T20HF220 22 2200 2250 18
Revision: 07-Jun-13
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
I
RRM
AT T
V
1
Document Number: 94709
MAXIMUM
= 150 °C
J
mA
VS-T20HF220
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T20HF UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle
forward, non-repetitive
surge current
2
Maximum I
Maximum I
Low level value of
threshold voltage
High level value of
threshold voltage
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 10 125 A2s
V
V
Low level value of
forward slope resistance
High level value of
forward slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
180° conduction, half sine wave
31 A
t = 10 ms
t = 8.3 ms 470
t = 10 ms
t = 8.3 ms 400
t = 10 ms
t = 8.3 ms 920
t = 10 ms
t = 8.3 ms 650
(16.7 % x x I
maximum
T
J
(I > x I
(16.7 % x x I
maximum
T
J
(I > x I
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
RRM
RRM
Sinusoidal
half wave,
=
initial T
J
T
maximum
J
reapplied
< I < x I
F(AV)
), TJ maximum 0.89
F(AV)
< I < x I
F(AV)
), TJ maximum 6.7
F(AV)
F(AV)
F(AV)
),
),
IFM = 60 A, TJ = 25 °C,
t
FM
= 400 μs square pulse
p
Average power = V
F(TO)
x I
F(AV)
+ rf x (I
F(RMS)
2
)
20 A
85 °C
450
380
1015
715
0.77
8.5
1.50 V
A
A2s
V
m
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS T20HF UNITS
Maximum peak reverse
leakage current
RMS isolation voltage V
I
RRM
ISOL
TJ = 150 °C 18 mA
50 Hz, circuit to base, all terminals shorted
T
= 25 °C, t = 1 s
J
3500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
Mounting torque,
± 10 %
to heatsink
terminals M5 screw terminals 3 ± 10 %
, T
T
J
Stg
R
thJC
R
thCS
DC operation 2.53
Mounting surface smooth, flat
and greased
Non-lubricated
M3.5 mounting screws
(1)
threads
Approximate weight See dimensions - link at the end of datasheet 54 g
Case style T-module (D-55)
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
VALUES
T20HF
UNITS
- 40 to 150 °C
K/W
0.2
1.3 ± 10 %
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
T20HF... 0.29 0.34 0.43 0.64 1.10 0.20 0.35 0.47 0.67 1.11 K/W
Note
• Table shows the increment of thermal resistance R
Revision: 07-Jun-13
MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
J
when devices operate at different conduction angles than DC
thJC
2
Document Number: 94709
Nm
UNITS
VS-T20HF220
Maximum Allowable Case Temperature (°C)
I
F(AV) -
Average Forward Current (A)
100
110
120
130
140
150
160
50
60
70
80
90
0102030
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
I
F(AV) -
Average Forward Current (A)
100
110
120
130
140
150
160
60
70
80
90
0102030
30°
60°
90°
120°
180°
DC
Maximum Forward Power Loss
Characteristics
Anode Forward Current (A)
0102030405060
30°
60°
90°
120°
180°
RMS limit
0
50
75
25
40
50
60
70
80
90
100
0
10
20
30
0 10 20 30 40 50 60 70 80
30°
60°
90°
120°
180°
DC
RMS limit
Maximum Forward Power Loss (W)
Anode Forward Current (A)
100
150
200
250
300
350
400
450
500
110100
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Vishay Semiconductors
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
620
520
420
No Voltage Reapplied
Rated V
RRM
Reapplied
Revision: 07-Jun-13
Fig. 3 - Forward Power Loss Characteristics
3
320
220
120
20
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94709
VS-T20HF220
1 - Vishay Semiconductors product
- Module type
3
- Circuit configuration (see Circuit Configuration table)
4
- Voltage code x 10 = V
RRM
5
- Current rating
2
Device code
1 32 4 5
TVS- 20 HF 220
Vishay Semiconductors
1000
100
- Instantaneous Forward Current (A)
F
I
TJ = 150 °C
10
1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
TJ = 25 °C
VF - Forward Voltage Drop (V)
100
10
1
0.1
0.01
- Reverse Current (mA)
R
I
0.001
0 500 1000 1500 2000 2500
VR - Reverse Voltage (V)
TJ = 150 °C
TJ = 25 °C
Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Typical Values of Reverse Current vs. Reverse Voltage
10
1
0.1
Thermal Impedance
-
Junction to Case (°C/W)
thJC
Z
0.01
0.0001 0.001 0.01 0.1 1 10 100
t1 - Rectangular Pulse Duration (s)
Fig. 9 - Maximum Thermal Impedance Z
Characteristics
thJC
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING
Single diode HF
Dimensions www.vishay.com/doc?95313
Revision: 07-Jun-13
LINKS TO RELATED DOCUMENTS
+-
4
Document Number: 94709
D-55 T-Module Diode Standard and Fast Recovery
3 (0.12)
3.9 (0.15)
8 (0.31)
M5
30 (1.18)
27 (1.06)
41 (1.61) MAX.
25 ± 1
23.5 (0.93)
+
-
11
(0.43)
18
(0.71)
15 (0.59)
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Document Number: 95313
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Disclaimer
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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