Vishay VS-T20HF220 Data Sheet
VS-T20HF220
Vishay Semiconductors
Power Rectifier Diodes (T-Modules), 2200 V, 20 A
FEATURES
• Electrically isolated base plate
D-55
• 2200 V
• Industrial standard packaging
• UL approved file E78996
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
RRM
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
I
F(AV)
Type Modules - Diode, High Voltage
V
RRM
Package D-55
Circuit Single diodes
20 A
2200 V
DESCRIPTION
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls, and solar panel application.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS T20HF UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
2
I
t 10 125 A2s
V
RRM
T
J
T
C
50 Hz 450
60 Hz 470
50 Hz 1015
60 Hz 920
20 A
85 °C
31
A
A2s
2200 V
- 40 to 150 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM REPETITIVE
V
TYPE
NUMBER
VOLTAGE
CODE
RRM
PEAK REVERSE VOLTAGE
V
T20HF220 22 2200 2250 18
Revision: 07-Jun-13
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
I
RRM
AT T
V
1
Document Number: 94709
MAXIMUM
= 150 °C
J
mA
VS-T20HF220
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T20HF UNITS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle
forward, non-repetitive
surge current
2
Maximum I
Maximum I
Low level value of
threshold voltage
High level value of
threshold voltage
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 10 125 A2s
V
V
Low level value of
forward slope resistance
High level value of
forward slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
180° conduction, half sine wave
31 A
t = 10 ms
t = 8.3 ms 470
t = 10 ms
t = 8.3 ms 400
t = 10 ms
t = 8.3 ms 920
t = 10 ms
t = 8.3 ms 650
(16.7 % x x I
maximum
T
J
(I > x I
(16.7 % x x I
maximum
T
J
(I > x I
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
RRM
RRM
Sinusoidal
half wave,
=
initial T
J
T
maximum
J
reapplied
< I < x I
F(AV)
), TJ maximum 0.89
F(AV)
< I < x I
F(AV)
), TJ maximum 6.7
F(AV)
F(AV)
F(AV)
),
),
IFM = 60 A, TJ = 25 °C,
t
FM
= 400 μs square pulse
p
Average power = V
F(TO)
x I
F(AV)
+ rf x (I
F(RMS)
2
)
20 A
85 °C
450
380
1015
715
0.77
8.5
1.50 V
A
A2s
V
m
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS T20HF UNITS
Maximum peak reverse
leakage current
RMS isolation voltage V
I
RRM
ISOL
TJ = 150 °C 18 mA
50 Hz, circuit to base, all terminals shorted
T
= 25 °C, t = 1 s
J
3500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
Mounting torque,
± 10 %
to heatsink
terminals M5 screw terminals 3 ± 10 %
, T
T
J
Stg
R
thJC
R
thCS
DC operation 2.53
Mounting surface smooth, flat
and greased
Non-lubricated
M3.5 mounting screws
(1)
threads
Approximate weight See dimensions - link at the end of datasheet 54 g
Case style T-module (D-55)
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
VALUES
T20HF
UNITS
- 40 to 150 °C
K/W
0.2
1.3 ± 10 %
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
T20HF... 0.29 0.34 0.43 0.64 1.10 0.20 0.35 0.47 0.67 1.11 K/W
Note
• Table shows the increment of thermal resistance R
Revision: 07-Jun-13
MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
J
when devices operate at different conduction angles than DC
thJC
2
Document Number: 94709
Nm
UNITS
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