Vishay VS-STPS40L45CWPbF, VS-STPS40L45CW-N3 Data Sheet
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TO-247AC
VS-STPS40L45CWPbF, VS-STPS40L45CW-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 20 A
Anode
1
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
V
at I
F
F
I
max. 80 mA at 100 °C
RM
max. 150 °C
T
J
Diode variation Common cathode
E
AS
Base
common
cathode
2
13
Common
cathode
Anode
2
2
2 x 20 A
45 V
0.49 V
20 mJ
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-STPS40L45CW... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 40 A
45 V
tp = 5 μs sine 1240 A
20 Apk, TJ = 125 °C (per leg, typical) 0.42 V
- 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS40L45CWPbF VS-STPS40L45CW-N3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
45 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
Revision: 30-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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per device
I
per leg 20
F(AV)
I
FSM
AR
50 % duty cycle at TC = 122 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
10 ms sine or 6 ms rect. pulse 350
TJ = 25 °C, IAS = 3 A, L = 4.4 mH 20 mJ
AS
RRM
applied
Current decaying linearly to zero in 1 μs
Frequency limited by T
1
maximum VA = 1.5 x VR typical
J
Document Number: 94333
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
40
A
1240
3A
VS-STPS40L45CWPbF, VS-STPS40L45CW-N3
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
20 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
40 A 0.61 0.69
(1)
20 A
40 A 0.60 0.70
Reverse leakage current per leg
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
t
S
TJ = 25 °C
(1)
T
J
TJ = TJ maximum
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 1500 pF
T
Measured lead to lead 5 mm from package body 7.5 - nH
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 100 °C 20 80
R
T
= 25 °C
J
= 125 °C
T
J
V
R
Vishay Semiconductors
0.48 0.53
0.42 0.49
= Rated V
R
-1.5
0.27 V
8.72 m
10 000 V/µs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) STPS40L45CW
T
, T
J
Stg
DC operation
See fig. 4
R
thJC
DC operation 0.8
Mounting surface, smooth and greased 0.24
R
thCS
Non-lubricated threads
- 55 to 150 °C
1.6
°C/W
6g
0.21 oz.
6 (5)
kgf · cm
(lbf · in)
Revision: 30-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94333
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-STPS40L45CWPbF, VS-STPS40L45CW-N3
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520
40
45
25 30 35
0
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
TJ = 150 °C
100
1000
10 000
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
10 20 30
50
40
0
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
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1000
100
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
10
1
- Instantaneous Forward Current (A)
F
I
0.2 0.4 0.6 1.0 1.4
0
V
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
J
(Per Leg)
Vishay Semiconductors
1.81.61.20.8
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Revision: 30-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 4 - Maximum Thermal Impedance Z
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Characteristics (Per Leg)
thJC
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94333
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