Vishay VS-STPS40L15CTPbF, VS-STPS40L15CT-N3 Data Sheet
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Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
Schottky Rectifier, 2 x 20 A
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
V
R
V
at I
F
F
I
max. 600 mA at 100 °C
RM
T
max. 125 °C
J
Diode variation Common cathode
E
AS
See Electrical table
VS-STPS40L15CTPbF, VS-STPS40L15CT-N3
Vishay Semiconductors
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
2 x 20 A
15 V
10 mJ
(-N3 only)
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for ultra low forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier
technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 40 A
15 V
tp = 5 μs sine 700 A
19 Apk, TJ = 125 °C (per leg, typical) 0.25 V
- 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS40L15CTPbF VS-STPS40L15CT-N3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
15 15 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Repetitive avalanche current per leg I
Non-repetitive avalanche energy per leg E
Revision: 30-Aug-11
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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per leg
I
per device 40
F(AV)
I
FSM
AR
50 % duty cycle at TC = 85 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 330
Current decaying linearly to zero in 1 μs
Frequency limited by T
TJ = 25 °C, IAS = 2 A, L = 6 mH 10 mJ
AS
1
maximum VA = 1.5 x VR typical
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Following any rated load
condition and with rated
V
applied
RRM
Document Number: 94330
20
700
2
A
VS-STPS40L15CTPbF, VS-STPS40L15CT-N3
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
19 A
Forward voltage drop per leg
See fig. 1
V
FM
40 A - 0.52
(1)
19 A
40 A 0.37 0.50
Reverse leakage current per leg
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
TJ = 25 °C
(1)
T
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C - 2000 pF
T
Measured lead to lead 5 mm from package body 8 - nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 100 °C - 600
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Vishay Semiconductors
-0.41
0.25 0.33
-10
R
0.182 V
7.6 m
10 000 V/µs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
J
Stg
DC operation
R
thJC
R
thCS
R
thJA
See fig. 4
Mounting surface, smooth and greased
(only for TO-220)
DC operation
2
(for D
PAK and TO-262)
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Non-lubricated threads
Marking device Case style TO-220AB STPS40L15CT
- 55 to 125
- 55 to 150
°C
1.5
0.50
°C/W
40
2g
0.07 oz.
6 (5)
kgf · cm
(lbf · in)
Revision: 30-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94330
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1
10
1.60.4
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0 0.2 0.6 0.8 1.0
TJ = 125 °C
T
J
= 75 °C
T
J
= 25 °C
1.2 1.4
1000
1000
010
100
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
51520
10 000
TJ = 25 °C
VS-STPS40L15CTPbF, VS-STPS40L15CT-N3
Vishay Semiconductors
1000
100
10
1
- Reverse Current (mA)
R
I
0.1
0
TJ = 100 °C
TJ = 50 °C
TJ = 25 °C
TJ = 75 °C
12369
15
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
- Thermal Impedance (°C/W)
Revision: 30-Aug-11
thJC
Z
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
0.1
Single pulse
(thermal resistance)
0.01
0.00001 0.0001 0.001 0.01 0.1
Fig. 4 - Maximum Thermal Impedance Z
t1 - Rectangular Pulse Duration (s)
D = 0.33
D = 0.25
D = 0.20
3
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
Characteristics
thJC
1 10
1/t2
thJC
.
+ T
C
100
Document Number: 94330
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