Vishay VS-STPS30L60CWPbF, VS-STPS30L60CW-N3 Data Sheet

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Base
common
cathode
Common
cathode
2
2
13
Anode
1
Anode
2
TO-247AC
Schottky Rectifier, 2 x 15 A
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
V
R
at I
V
F
F
I
max. 100 mA at 125 °C
RM
T
max. 150 °C
J
Diode variation Common cathode
E
AS
VS-STPS30L60CWPbF, VS-STPS30L60CW-N3
Vishay Semiconductors
FEATURES
• 150 °C TJ operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition (-N3 only)
2 x 15 A
60 V
0.56 V
13 mJ
DESCRIPTION
The VS-STPS30L60CW... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 30 A
60 V
tp = 5 μs sine 1020 A
15 Apk, TJ = 125 °C (per leg) 0.56 V
- 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-STPS30L60CWPbF VS-STPS30L60CW-N3 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
60 60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current per leg See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
I
F(AV)
I
FSM
50 % duty cycle at TC = 112 °C, rectangular waveform 30
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 265
TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH 13 mJ
AS
AR
Current decaying linearly to zero in 1 μs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated
applied
V
RRM
1020
1.50 A
A
Revision: 30-Aug-11
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94329
VS-STPS30L60CWPbF, VS-STPS30L60CW-N3
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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
15 A
Maximum forward voltage drop per leg See fig. 1
V
FM
30 A 0.80
(1)
15 A
30 A 0.70
TJ = 25 °C
Maximum reverse leakage current per leg See fig. 2
Maximum junction capacitance per leg C
Typical series inductance per leg L
I
RM
(1)
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 720 pF
T
Measured lead to lead 5 mm from package body 7.5 nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
= 125 °C
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
Vishay Semiconductors
0.60
0.56
0.48
R
50 (typical)
100
10 000 V/µs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per package
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) STPS30L60CW
T
, T
J
Stg
DC operation See fig. 4
R
thJC
DC operation 1.10
Mounting surface, smooth and greased 0.24
R
thCS
Non-lubricated threads
- 55 to 150 °C
2.20
°C/W
6g
0.21 oz.
6 (5)
kgf · cm (lbf · in)
Revision: 30-Aug-11
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94329
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-STPS30L60CWPbF, VS-STPS30L60CW-N3
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
10 20
50
60
30 40
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.001
0.01
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
0.1
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1000
100
10
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
1
- Instantaneous Forward Current (A)
0.1
F
I
0
0.2 0.4 1.0 1.4 1.8
V
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
J
0.80.6 1.2 1.6
(Per Leg)
Vishay Semiconductors
2.0
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
1000
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
10 20 30 40
0
155253545
V
- Reverse Voltage (V)
R
65
55 60
50
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Revision: 30-Aug-11
Fig. 4 - Maximum Thermal Impedance Z
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
thJC
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Characteristics (Per Leg)
Document Number: 94329
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