Vishay VS-ST780CL Series Data Sheet
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TO-200AC (B-PUK)
(Hockey PUK Version), 1350 A
PRODUCT SUMMARY
Package TO-200AC (B-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
Phase Control Thyristors
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
1350 A
400 V, 600 V
1.31 V
100 mA
-40 °C to 125 °C
VS-ST780CL Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
v -40 to 125 °C
T
J
T
hs
T
hs
50 Hz 24 400
60 Hz 25 600
50 Hz 2986
60 Hz 2726
Typical 150 µs
1350 A
55 °C
2700 A
25 °C
400 to 600 V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST780C..L
V
VOLTAGE
CODE
04 400 500
06 600 700
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
J
A
kA2s
MAXIMUM
= TJ MAXIMUM
mA
80
Revision: 15-Apr-14
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94415
VS-ST780CL Series
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 29 860 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 2700
t = 10 ms
t = 8.3 ms 25 600
t = 10 ms
t = 8.3 ms 21 500
t = 10 ms
t = 8.3 ms 2726
t = 10 ms
t = 8.3 ms 1928
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
T(AV)
), TJ = TJ maximum 0.90
T(AV)
T(AV)
), TJ = TJ maximum 0.13
T(AV)
RRM
< I < π x I
< I < π x I
Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.31 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
1350 (500) A
55 (85) °C
24 400
20 550
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.80
T(AV)
), TJ = TJ maximum 0.14
T(AV)
2986
2112
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 μs
r
DRM
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
R
1000 A/µs
1.0
µs
150
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
,
I
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 80 mA
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 94415
VS-ST780CL Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power
Maximum average gate power
P
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
+ V
- V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
P
G(AV)
I
GM
GD
GM
GT
GT
GD
TJ = TJ maximum, tp ≤ 5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
GM
TJ = TJ maximum, tp ≤ 5 ms
GM
TJ = -40 °C
= 25 °C 100 200
J
= 125 °C 50 -
T
J
TJ = -40 °C
= 25 °C 1.8 3.0
J
T
= 125 °C 1.1 -
J
TJ = TJ maximum
Maximum required gate
trigger/current/voltage are the
lowest value which will trigger
all units 12 V anode to cathode
applied
Maximum gate
current/voltage not to trigger
is the maximum value which
will not trigger any unit with
rated V
applied
Vishay Semiconductors
VALUES
TYP. MAX.
10.0
2.0
3.0 A
20
5.0
200 -
2.5
10 mA
anode to cathode
DRM
0.25 V
UNITS
W
mAT
-
V
VT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.073
DC operation double side cooled 0.031
DC operation single side cooled 0.011
DC operation double side cooled 0.006
Mounting force, ± 10 %
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)
ΔR
CONDUCTION ANGLE
CONDUCTION
thJ-hs
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.009 0.009 0.006 0.006
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
= TJ maximum K/W
T
J
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
-40 to 125
-40 to 150
14 700
(1500)
°C
K/W
N
(kg)
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94415
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