Vishay VS-ST730CL Series Data Sheet

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TO-200AC (B-PUK)

Phase Control Thyristors

(Hockey PUK Version), 990 A

PRODUCT SUMMARY

Package TO-200AC (B-PUK)

Diode variation Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

800 V, 1200 V, 1400 V, 1600 V, 1800 V, 2000 V

990 A

1.62 V

100 mA

-40 °C to 125 °C

VS-ST730CL Series

Vishay Semiconductors

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AC (B-PUK)

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 17 800

60 Hz 18 700

50 Hz 1591

60 Hz 1452

Typical 150 μs

990 A

55 °C

2000 A

25 °C

A

kA2s

800 to 2000 V

-40 to 125 °C

VOLTAGE RATINGS

TYPE
NUMBER

VS-ST730CL

V

VOLTAGE

CODE

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

18 1800 1900

20 2000 2100

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

NON-REPETITIVE PEAK VOLTAGE

V

V

RSM

, MAXIMUM

V

I

DRM/IRRM

T

= TJ MAXIMUM

J

MAXIMUM AT

mA

80

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 15 910 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 2000

t = 10 ms

t = 8.3 ms 18 700

t = 10 ms

t = 8.3 ms 15 700

t = 10 ms

t = 8.3 ms 1452

t = 10 ms

t = 8.3 ms 1027

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.12

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.27

T(AV)

Ipk = 2000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.62 V

TJ = 25 °C, anode supply 12 V resistive load

Vishay Semiconductors

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 0.98

T(AV)

), TJ = TJ maximum 0.32

T(AV)

990 (375) A

55 (85) °C

17 800

15 000

1591

1125

kA2s

mΩ

600

1000

mA

A

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

DRM

ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs,
V

= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs

R

≤ 1 μs

r

, TJ = 25 °C

DRM

1000 A/μs

1.0
μs

150

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

,

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/μs

applied 80 mA

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VS-ST730CL Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = -40 °C

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = -40 °C 2.5 -

= 25 °C 1.8 3.0

T

GT

J

T

= 125 °C 1.1 -

J

Maximum required gate
trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V
cathode applied

Vishay Semiconductors

anode to

DRM

VALUES

Typ. Max.

20

5.0

200 -

10 mA

0.25 V

UNITS

W

mAT

V

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

DC operation single side cooled 0.011

DC operation double side cooled 0.006

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

ΔR

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.009 0.009 0.006 0.006

120° 0.011 0.011 0.010 0.011

90° 0.014 0.014 0.015 0.015

= TJ maximum K/W

T

J

60° 0.020 0.020 0.021 0.021

30° 0.036 0.036 0.036 0.036

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

-40 to 125

-40 to 150

14 700

(1500)

°C

K/W

N

(kg)

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40

50

60

70

80

90

100

110

120

130

0 100200300400500600700

30°

60°

90°

120°

180°

Average On-state Current (A)

Cond uction Angle

Maximum Allowa ble Heatsink Temperature (°C)

ST7 3 0 C . . L Se r i e s
(Single Side Cooled)
R (DC) = 0.073 K/ W

thJ-hs

20

30

40

50

60

70

80

90

100

110

120

130

0 200 400 600 800 1000 1200 1400

30°

60°

90°

120°

180°

Cond uction Ang le

ST7 30 C . . L Se r i e s
(Double Sid e Cooled)
R (DC) = 0.031 K/ W

thJ-hs

20

30

40

50

60

70

80

90

100

110

120

130

0 400 800 1200 1600 2000 2400

DC

30°

60°

90°

120°

180°

Av e ra ge On-sta te C urre nt ( A )

Conduction Period

Maximum Allowable Heatsink Temperature (°C)

ST7 30 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.031 K/ W

thJ-hs

0

500

1000

1500

2000

2500

0 200 400 600 800 1000 1200 1400

180°
120°

90°
60°
30°

RM S Li m i t

Cond uction Angle

Maximum Average On-state Power Loss (W)

Averag e On-stat e Current (A)

ST730C ..L Series
T = 125°C

J

VS-ST730CL Series

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

30°

40

30

20

020040060080010001200

Maximum Allow able Heatsink Temperature (°C)

Avera ge On-state Current (A)

Fig. 2 - Current Ratings Characteristics

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Fig. 3 - Current Ratings Characteristics

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Fig. 4 - Current Ratings Characteristics

ST730C ..L Series
(Single Side Cooled)
R (DC) = 0.073 K/ W

thJ-hs

Cond uction Period

60°

90°

120°

180°

DC

Fig. 5 - On-State Power Loss Characteristics

3500

3000

2500

2000

1500

1000

500

Maximum Average On-state Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Li m i t

Conduction Period

0

0 400 800 1200 1600 2000 2400

Averag e On-state Curren t (A)

Fig. 6 - On-State Power Loss Characteristics

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ST730C ..L Se ries
T = 1 25 ° C

J

Document Number: 94414

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VS-ST730CL Series

Vishay Semiconductors

16000

At Any Rated Loa d Condition And With

Rated V Applied Following Surge.

15000

14000

13000

12000

11000

10000

9000

ST7 3 0 C . . L Se r i e s

8000

Pea k Ha lf Sine Wave On -sta te Current (A)

7000

110100

Number Of Eq ual Amplitude Ha lf Cycle Current Pulses (N)

RRM

Init ia l T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

T = 2 5 ° C

J

18000

17000

16000

15000

14000

Maximum Non Rep etitive Surge Current

Ve rsus Pu lse Train D ura t io n. C o n t ro l

Of Conduc tion May Not Be Mainta ined .

Init ial T = 125°C

No Voltage Reapplied
Ra t e d V Re a p p l i e d

RRM

13000

12000

11000

10000

9000

ST7 30 C . . L Se r i e s

8000

Peak Half Sine Wave On-state Current (A)

7000

0.01 0.1 1

Pulse Train Duration (s)

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

T = 125°C

J

J

1000

ST7 3 0 C . .L Se r i e s

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3 3.5

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

0.1

Steady State Value

R = 0.073 K/ W

thJ-hs

thJ-hs

0.001

Transient Thermal Impedance Z (K/W)

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(Single Side Cooled)

R = 0.031 K/ W

thJ-hs

(Double Side Cooled)

(DC Operation)

0.01

ST7 30 C . . L Se r i e s

0.001 0.01 0.1 1 10

Sq u a r e W a v e Pu l se D u r a t i o n ( s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

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- Thyristor

2

- Essential part number

3

- 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

6

- L = PUK case TO-200AC (B-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

9

8

- Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

Device code

51 32 4 6 7 8 9

STVS- 73 0 C 20 L 1 -

1 - Vishay Semiconductors product

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% ra t e d d i/ dt : 10V, 10ohms

10

tr<=1 µs

1

In st a nt a n e o us G a t e V o lt a g e ( V )

0.1

0.001 0.01 0.1 1 10 100

VGD

ORDERING INFORMATION TABLE

Tj = 1 25 ° C

IGD

Device: ST730C..L Se ries

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

VS-ST730CL Series

Vishay Semiconductors

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(a)

(b)

Tj = - 40 °C

Tj = 2 5 ° C

(2)

(1)

Fre q ue n c y Li m i t e d b y PG ( AV )

(3)

(4)

Dimensions www.vishay.com/doc?95076

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LINKS TO RELATED DOCUMENTS

6

Document Number: 94414

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DIMENSIONS in millimeters (inches)

Pin receptacle
AMP. 60598-1

0.7 (0.03) MIN.

34 (1.34) DIA. MAX.

2 places

53 (2.09) DIA. MAX.

58.5 (2.3) DIA. MAX.

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep

4.7 (0.18)

27 (1.06) MAX.

0.7 (0.03) MIN.

6.2 (0.24) MIN.

36.5 (1.44)

Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

20° ± 5°

Outline Dimensions

Vishay Semiconductors

TO-200AC (B-PUK)

Document Number: 95076 For technical questions, contact: [e-mail]
Revision: 01-Aug-07 1

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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