Vishay VS-ST380C Series Data Sheet
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TO-200AB (E-PUK)
Phase Control Thyristors
(Hockey PUK Version), 960 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (E-PUK)
• Low profile hockey PUK to increase
current-carrying capability
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VS-ST380C Series
Vishay Semiconductors
RoHS
COMPLIANT
PRODUCT SUMMARY
Package TO-200AB (E-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
960 A
400 V, 600 V
1.60 V
100 mA
-40 °C to 125 °C
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 15 000
60 Hz 15 700
50 Hz 1130
60 Hz 1030
Typical 100 µs
960 A
55 °C
1900 A
25 °C
A
kA2s
400 to 600 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST380C..C
Revision: 20-Dec-13
V
VOLTAGE
CODE
04 400 500
06 600 700
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DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
V
1
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
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RSM
V
I
DRM/IRRM
Document Number: 94410
MAXIMUM
AT T
= TJ
J
MAXIMUM mA
50
VS-ST380C Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 11 300 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1900
t = 10 ms
t = 8.3 ms 15 700
t = 10 ms
t = 8.3 ms 13 200
t = 10 ms
t = 8.3 ms 1030
t = 10 ms
t = 8.3 ms 725
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
), TJ = TJ maximum 0.88
T(AV)
), TJ = TJ maximum 0.24
T(AV)
reapplied
< I < π x I
T(AV)
< I < π x I
T(AV)
RRM
Ipk = 3000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.60 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
960 (440) A
55 (75) °C
15 000
12 600
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.85
T(AV)
), TJ = TJ maximum 0.25
T(AV)
1130
800
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
R
≤ 1 μs
r
, TJ = 25 °C
DRM
1000 A/µs
1.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
RRM,
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 50 mA
Revision: 20-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 94410
VS-ST380C Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
G(AV)
GM
GD
TJ = TJ maximum, tp ≤ 5 ms 10.0
GM
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp ≤ 5 ms 3.0 A
GM
TJ = TJ maximum, tp ≤ 5 ms
GM
TJ = -40 °C
GT
GT
= 25 °C 100 200
J
T
= 125 °C 50 -
J
TJ = -40 °C 2.5 -
= 25 °C 1.8 3.0
T
J
T
= 125 °C 1.1 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
GD
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
anode to
DRM
VALUES
TYP. MAX.
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.09
DC operation double side cooled 0.04
DC operation single side cooled 0.02
DC operation double side cooled 0.01
Mounting force, ± 10 %
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
ΔR
CONDUCTION
thJ-hs
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.010 0.011 0.007 0.007
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
= TJ maximum K/W
T
J
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
-40 to 125
-40 to 150
9800
(1000)
°C
K/W
N
(kg)
Revision: 20-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94410
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