Vishay VS-ST333SP Series Data Sheet
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TO-209AE (TO-118)
PRODUCT SUMMARY
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 11 000 A
TSM
I
at 60 Hz 11 520 A
TSM
I
GT
T
J
Package TO-209AE (TO-118)
Diode variation Single SCR
Inverter Grade Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
330 A
400 V, 2000 V
1.96 V
200 mA
-40 °C to 125 °C
• Induction heating
• All types of force-commutated converters
VS-ST333SP Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 11 000
60 Hz 11 520
50 Hz 605
60 Hz 550
330 A
75 °C
518
400 to 800 V
15 μs
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
VS-ST333S
Revision: 12-Mar-14
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
04 400 500
08 800 900
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DRM/VRRM
, MAXIMUM REPETITIVE
PEAK VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
1
PEAK VOLTAGE
V
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I
DRM/IRRM
T
= TJ MAXIMUM
J
Document Number: 94377
A
kA2s
MAXIMUM AT
mA
50
VS-ST333SP Series
180° el
I
TM
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CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
50 Hz 840 600 1280 1040 5430 4350
400 Hz 650 450 1280 910 2150 1560
1000 Hz 430 230 1090 730 1080 720
2500 Hz 140 60 490 250 400 190
Recovery voltage V
R
Voltage before turn-on V
D
50 50 50
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/μs
Case temperature 507550755075°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state
current at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6050 kA2s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope
resistance
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
r
t2
H
L
180° conduction, half sine wave
DC at 63 °C case temperature 518
t = 10 ms
t = 8.3 ms 11 520
t = 10 ms
t = 8.3 ms 9700
t = 10 ms
t = 8.3 ms 550
t = 10 ms
t = 8.3 ms 390
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
Sinusoidal half wave,
initial T
ITM = 1810 A, TJ = TJ maximum,
t
= 10 ms sine wave pulse
p
(16.7 % x x I
(I > x I
T(AV)
(16.7 % x x I
(I > x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 0.92
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 0.58
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
Vishay Semiconductors
I
TM
100 µs
V
DRM
330 A
75 °C
11 000
9250
= TJ maximum
J
), TJ = TJ maximum 0.91
), TJ = TJ maximum 0.58
605
430
1.96
A
V
A
kA2s
V
m
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Maximum turn-off time t
dI/dt
d
q
Revision: 12-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T
= TJ maximum, V
J
I
= 2 x dI/dt
TM
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 source
= Rated V
DRM
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
TJ = TJ maximum,
I
= 550 A, commutating dI/dt = 40 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt = 200 V/μs
R
2
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1000 A/μs
1.0
15
Document Number: 94377
μs
VS-ST333SP Series
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BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= TJ maximum, linear to 80 % V
T
Maximum critical rate of rise of off-state voltage dV/dt
Maximum peak reverse and off-state leakage
current
I
RRM
I
DRM
J
higher value available on request
,
TJ = TJ maximum, rated V
DRM/VRRM
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
Maximum DC gate current required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated V
DRM
Vishay Semiconductors
,
DRM
applied 50 mA
applied
500 V/μs
60
10
10 A
20
5
200 mA
3V
20 mA
0.25 V
W
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
J
Stg
thJC
thCS
DC operation 0.10
Mounting surface, smooth, flat and greased 0.03
Mounting torque, ± 10 % Non-lubricated threads
Approximate weight 535 g
Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)
R
CONDUCTION
thJ-hs
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.011 0.008
120° 0.013 0.014
T
90° 0.017 0.018
= TJ maximum K/W
J
60° 0.025 0.026
30° 0.041 0.042
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
-40 to 125
-40 to 150
48.5
(425)
N · m
(lbf · in)
°C
K/W
Revision: 12-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
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Document Number: 94377
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