Vishay VS-ST333C..C Series Data Sheet
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TO-200AB (E-PUK)
PRODUCT SUMMARY
Package TO-200AB (E-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 11 000 A
TSM
I
at 60 Hz 11 500 A
TSM
I
GT
T
C/Ths
VS-ST333C..C Series
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AB (E-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: For definitions of compliance
720 A
400 V, 800 V
1.96 V
200 mA
55 °C
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 11 000
60 Hz 11 500
50 Hz 605
60 Hz 553
Range 10 to 30 μs
720 A
55 °C
1435 A
25 °C
400 to 800 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST333C..C
V
VOLTAGE
CODE
04 400 500
08 800 900
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
V
I
DRM/IRRM
AT T
A
kA2s
MAXIMUM
= TJ MAXIMUM
J
mA
50
Revision: 20-Dec-13
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 93678
180° el
I
TM
VS-ST333C..C Series
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CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
50 Hz 1630 1420 2520 2260 7610 6820
400 Hz 1630 1390 2670 2330 4080 3600
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA2√s
Maximum peak on-state voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1435
t = 10 ms
t = 8.3 ms 11 500
t = 10 ms
t = 8.3 ms 9700
t = 10 ms
t = 8.3 ms 553
t = 10 ms
t = 8.3 ms 391
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96
(16.7 % x π x I
(I > π x I
T(AV)
(16.7 % x π x I
(I > π x I
T(AV)
< I < π x I
T(AV)
T(AV)
), TJ = TJ maximum 0.93
< I < π x I
T(AV)
T(AV)
), TJ = TJ maximum 0.58
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
Vishay Semiconductors
I
TM
100 µs
V
DRM
720 (350) A
55 (75) °C
11 000
9250
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.91
), TJ = TJ maximum 0.58
605
428
A
V
A
kA2s
VLow level value of threshold voltage V
mΩ
mA
SWITCHING
VALUES
PARAMETER SYMBOL TEST CONDITIONS
Maximum non-repetitive rate of rise
of turned on current
Typical delay time t
dI/dt T
d
= TJ maximum, V
J
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 Ω source
= Rated V
DRM
; ITM = 2 x dI/dt 1000 A/µs
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
TJ = TJ maximum,
I
Maximum turn-off time t
q
Revision: 20-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
= 550 A, commutating dI/dt = 40 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt: See table in device code
R
2
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MIN.
10 30
Document Number: 93678
1.1
MAX
.
UNITS
µs
VS-ST333C..C Series
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BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
T
= TJ maximum, linear to 80 % V
Maximum critical rate of rise of off-state voltage dV/dt
I
Maximum peak reverse and off-state leakage current
RRM
I
DRM
,
J
higher value available on request
TJ = TJ maximum, rated V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate currrent required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp ≤ 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
TJ = TJ maximum, rated V
Vishay Semiconductors
,
DRM/VRRM
applied
DRM
DRM
applied 50 mA
500 V/µs
60
10
10 A
20
5
200 mA
3V
20 mA
0.25 V
W
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.09
DC operation double side cooled 0.04
DC operation single side cooled 0.020
DC operation double side cooled 0.010
Mounting force, ± 10 %
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)
ΔR
CONDUCTION
thJ-hs
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.010 0.011 0.007 0.007
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017
T
J
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
-40 to 125
-40 to 150
9800
(1000)
= TJ maximum K/W
°C
K/W
N
(kg)
Revision: 20-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
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Document Number: 93678
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