VISHAY VSMS3700 Technical data

Infrared Emitting Diode, 950 nm, GaAs

94 8553

DESCRIPTION

VSMS3700 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a PLCC-2 package for surface
mounting (SMD).

VSMS3700

Vishay Semiconductors

FEATURES

• Package type: surface mount

• Package form: PLCC-2

• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75

• Peak wavelength: λ

• High reliability

• Angle of half intensity: ϕ = ± 60°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si
photodetectors

• Package matched with IR emitter series VEMT3700

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications

= 950 nm

p

APPLICATIONS

• Infrared source in tactile keyboards

• IR diode in low space applications

• PCB mounted infrared sensors

• Emitter in miniature photo-interrupters

PRODUCT SUMMARY

COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)

VSMS3700 4.5 ± 60 950 800

Note

Test conditions see table “Basic Characteristics”

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

VSMS3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2

VSMS3700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2

Note

MOQ: minimum order quantity

** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902

Document Number: 81373 For technical questions, contact: [e-mail]
Rev. 1.3, 03-Nov-09 322

www.vishay.com

VSMS3700

Vishay Semiconductors

Infrared Emitting Diode, 950 nm,

GaAs

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Forward current I

Peak forward current t

Surge forward current t

/T = 0.5, tp = 100 μs I

p

= 100 μs I

p

Power dissipation P

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature Acc. figure 11, J-STD-020 T

Thermal resistance junction/ambient J-STD-051, soldered on PCB R

R

F

FM

FSM

V

j

amb

stg

sd

thJA

Note

T

= 25 °C, unless otherwise specified

amb

180

160

140

120

100

R

80

60

40

- Power Dissipation (mW)

V

P

20

21341

= 250 K/W

thJA

0

0 102030405060708090100

T

- Ambient Temperature (°C)

amb

120

100

80

60

R

= 250 K/W

thJA

40

- Forward Current (mA)

F

I

20

0

0 10 203040 50607080 90100

21342

- Ambient Temperature (°C)

T

amb

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

5V

100 mA

200 mA

1.5 A

170 mW

100 °C

- 40 to + 85 °C

- 40 to + 100 °C

260 °C

250 K/W

BASIC CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

I

= 100 mA, tp = 20 ms V

Forward voltage

Temperature coefficient of V

F

F

I

= 1 A, tp = 100 μs V

F

IF = 100 mA TK

Reverse current V

Junction capacitance V

Radiant intensity

Radiant power I

Temperature coefficient of φ

e

= 0 V, f = 1 MHz, E = 0 C

R

= 100 mA, tp = 20 ms I

I

F

I

= 1.5 A, tp = 100 μs I

F

= 100 mA, tp = 20 ms φ

F

IF = 100 mA TKφ

= 5 V I

R

F

F

VF

R

j

e

e

e

e

1.6 4.5 8 mW/sr

Angle of half intensity ϕ ± 60 deg

Peak wavelength I

Spectral bandwidth I

Temperature coefficient of λ

p

Rise time

Fall time

= 100 mA λ

F

= 100 mA Δλ 50 nm

F

IF = 100 mA TKλ

I

= 20 mA t

F

I

= 1 A t

F

I

= 20 mA t

F

I

= 1 A t

F

p

p

r

r

f

f

Virtual source diameter EN 60825-1 d 0.5 mm

Note

T

= 25 °C, unless otherwise specified

amb

www.vishay.com For technical questions, contact: [e-mail]
323 Rev. 1.3, 03-Nov-09

1.3 1.7 V

1.8 V

- 1.3 mV/K

100 μA

30 pF

35 mW/sr

15 mW

- 0.8 %/K

950 nm

0.2 nm/K

800 ns

400 ns

800 ns

400 ns

Document Number: 81373

VSMS3700

BASIC CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

10 000

tp/T = 0.005

1000

100

0.2

0.5

DC

10

- Forward Current (mA)

F

I

1

0.01 0.1 1 10

95 9985

Fig. 3 - Pulse Forward Current vs. Pulse Duration

4

10

0.01

0.1

tp - Pulse Length (ms)

Infrared Emitting Diode, 950 nm,

GaAs

T

< 60 °C

amb

0.02

0.05

100

Vishay Semiconductors

100

10

1

- Radiant Intensity (mW/sr)

e

I

0.1

94 7956

10

0

1

10

I

- Forward Current (mA)

F

10

2

Fig. 6 - Radiant Intensity vs. Forward Current

1000

10

3

10

4

3

10

2

10

1

10

0

10

F

I - Forward Current (mA)

-1

94 7996

10

- Forward Voltage (V)

V

F

43210

Fig. 4 - Forward Current vs. Forward Voltage

1.2

1.1

= 10 mA

I

F

1.0

0.9

0.8

- Relative Forward Voltage (V)

F rel

V

94 7990

0.7

T

- Ambient Temperature (°C)

amb

100806040200

Fig. 5 - Relative Forward Voltage vs. Ambient Temperature

100

10

- Radiant Power (mW)

1

e

Φ

0.1

94 8012

10

10

1

0

IF - Forward Current (mA)

10

2

10

3

10

4

Fig. 7 - Radiant Power vs. Forward Current

1.6

1.2

Φ

;

I

e rel

0.8

e rel

IF = 20 mA

0.4

0

- 10 10 50 0 100

T

94 7993

- Ambient Temperature (°C)

amb

140

Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature

Document Number: 81373 For technical questions, contact: [e-mail]

www.vishay.com

Rev. 1.3, 03-Nov-09 324