Infrared Emitting Diode, 950 nm, GaAs
94 8553
DESCRIPTION
VSMS3700 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a PLCC-2 package for surface
mounting (SMD).
VSMS3700
Vishay Semiconductors
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λ
• High reliability
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si
photodetectors
• Package matched with IR emitter series VEMT3700
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications
= 950 nm
p
APPLICATIONS
• Infrared source in tactile keyboards
• IR diode in low space applications
• PCB mounted infrared sensors
• Emitter in miniature photo-interrupters
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
VSMS3700 4.5 ± 60 950 800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMS3700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2
VSMS3700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2
Note
MOQ: minimum order quantity
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81373 For technical questions, contact: emittertechsupport@vishay.com
Rev. 1.3, 03-Nov-09 322
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VSMS3700
Vishay Semiconductors
Infrared Emitting Diode, 950 nm,
GaAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
Forward current I
Peak forward current t
Surge forward current t
/T = 0.5, tp = 100 μs I
p
= 100 μs I
p
Power dissipation P
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature Acc. figure 11, J-STD-020 T
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
R
F
FM
FSM
V
j
amb
stg
sd
thJA
Note
T
= 25 °C, unless otherwise specified
amb
180
160
140
120
100
R
80
60
40
- Power Dissipation (mW)
V
P
20
21341
= 250 K/W
thJA
0
0 102030405060708090100
T
- Ambient Temperature (°C)
amb
120
100
80
60
R
= 250 K/W
thJA
40
- Forward Current (mA)
F
I
20
0
0 10 203040 50607080 90100
21342
- Ambient Temperature (°C)
T
amb
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
5V
100 mA
200 mA
1.5 A
170 mW
100 °C
- 40 to + 85 °C
- 40 to + 100 °C
260 °C
250 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
I
= 100 mA, tp = 20 ms V
Forward voltage
Temperature coefficient of V
F
F
I
= 1 A, tp = 100 μs V
F
IF = 100 mA TK
Reverse current V
Junction capacitance V
Radiant intensity
Radiant power I
Temperature coefficient of φ
e
= 0 V, f = 1 MHz, E = 0 C
R
= 100 mA, tp = 20 ms I
I
F
I
= 1.5 A, tp = 100 μs I
F
= 100 mA, tp = 20 ms φ
F
IF = 100 mA TKφ
= 5 V I
R
F
F
VF
R
j
e
e
e
e
1.6 4.5 8 mW/sr
Angle of half intensity ϕ ± 60 deg
Peak wavelength I
Spectral bandwidth I
Temperature coefficient of λ
p
Rise time
Fall time
= 100 mA λ
F
= 100 mA Δλ 50 nm
F
IF = 100 mA TKλ
I
= 20 mA t
F
I
= 1 A t
F
I
= 20 mA t
F
I
= 1 A t
F
p
p
r
r
f
f
Virtual source diameter EN 60825-1 d 0.5 mm
Note
T
= 25 °C, unless otherwise specified
amb
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com
323 Rev. 1.3, 03-Nov-09
1.3 1.7 V
1.8 V
- 1.3 mV/K
100 μA
30 pF
35 mW/sr
15 mW
- 0.8 %/K
950 nm
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
Document Number: 81373
VSMS3700
BASIC CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
10 000
tp/T = 0.005
1000
100
0.2
0.5
DC
10
- Forward Current (mA)
F
I
1
0.01 0.1 1 10
95 9985
Fig. 3 - Pulse Forward Current vs. Pulse Duration
4
10
0.01
0.1
tp - Pulse Length (ms)
Infrared Emitting Diode, 950 nm,
GaAs
T
< 60 °C
amb
0.02
0.05
100
Vishay Semiconductors
100
10
1
- Radiant Intensity (mW/sr)
e
I
0.1
94 7956
10
0
1
10
I
- Forward Current (mA)
F
10
2
Fig. 6 - Radiant Intensity vs. Forward Current
1000
10
3
10
4
3
10
2
10
1
10
0
10
F
I - Forward Current (mA)
-1
94 7996
10
- Forward Voltage (V)
V
F
43210
Fig. 4 - Forward Current vs. Forward Voltage
1.2
1.1
= 10 mA
I
F
1.0
0.9
0.8
- Relative Forward Voltage (V)
F rel
V
94 7990
0.7
T
- Ambient Temperature (°C)
amb
100806040200
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
100
10
- Radiant Power (mW)
1
e
Φ
0.1
94 8012
10
10
1
0
IF - Forward Current (mA)
10
2
10
3
10
4
Fig. 7 - Radiant Power vs. Forward Current
1.6
1.2
Φ
;
I
e rel
0.8
e rel
IF = 20 mA
0.4
0
- 10 10 50 0 100
T
94 7993
- Ambient Temperature (°C)
amb
140
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81373 For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.3, 03-Nov-09 324
VSMS3700
Vishay Semiconductors
1.25
1.0
0.75
0.5
0.25
- Relative Radiant Power
e rel
Φ
0
900 950
94 7994
IF = 100 mA
λ - Wavelength (nm)
Infrared Emitting Diode, 950 nm,
Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
± 0.2
3.5
1000
GaAs
1.0
0.9
0.8
- Relative Radiant Intensity
0.7
e, rel
I
0.4 0.2 0
0.6
94 8013
0°
10° 20°
30°
40°
50°
60°
70°
ϕ - Angular Displacement
80°
± 0.1
1.75
0.9
Pin identification
± 0.15
CA
2.8
Ø 2.4
+ 0.15
3
2.2
Drawing-No.: 6.541-5067.01-4
Issue: 5; 04.11.08
20541
Die Position (for reference only)
X = +/- 0.2 mm centrical
Y = +/- 0.2 mm centrical
Z = 1.13 mm +/- 0.25 mm, from top of die bottom of component
2.6 (2.8)
1.6 (1.9)
technical drawings
according to DIN
specifications
Mounting Pad Layout
1.2
4
area covered with
solder resist
4
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Document Number: 81373
325 Rev. 1.3, 03-Nov-09
VSMS3700
Infrared Emitting Diode, 950 nm,
SOLDER PROFILE
300
255 °C
250
240 °C
217 °C
200
150
100
Temperature (°C)
50
0
0 50 100 150 200 250 300
19841
max. 120 s
max. ramp up 3 °C/s
Time (s)
max. ramp down 6 °C/s
Fig. 11 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
Moisture sensitivity level 3, acc. to J-STD-020.
< 30 °C, RH < 60 %
amb
max. 260 °C
245 °C
max. 30 s
max. 100 s
Vishay Semiconductors
GaAs
3.5
3.1
5.75
5.25
8.3
3.6
7.7
3.4
1.85
1.6
1.4
4.1
3.9
2.05
1.95
4.1
3.9
Fig. 13 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
1.65
2.2
2.0
0.25
94 8668
94 8158
4.0
3.6
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
Adhesive tape
Blister tape
Component cavity
Fig. 12 - Blister Tape
Document Number: 81373 For technical questions, contact: emittertechsupport@vishay.com
Rev. 1.3, 03-Nov-09 326
94 8670
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
> 160 mm
Tape leader
40 empty
compartments
Carrier leader Carrier trailer
min. 75 empty
compartments
Fig. 14 - Beginning and End of Reel
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VSMS3700
Vishay Semiconductors
120°
4.5
3.5
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
Fig. 15 - Dimensions of Reel-GS08
180
178
321
329
4.5
3.5
120°
2.5
1.5
Infrared Emitting Diode, 950 nm,
GaAs
COVER TAPE REMOVAL FORCE
13.00
12.75
14.4 max.
13.00
12.75
14.4 max.
10.0
10.4
8.4
9.0
63.5
60.5
94 8665
62.5
60.0
18857
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
Fig. 16 - Dimensions of Reel-GS18
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Document Number: 81373
327 Rev. 1.3, 03-Nov-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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