VISHAY VSMF3710 Technical data
VSMF3710
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
= 890 nm
p
= 12 MHz
c
94 8553
DESCRIPTION
VSMF3710 is an infrared, 890 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
• Peak wavelength: λ
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: f
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications
APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns)
VSMF3710 10 ± 60 890 30
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMF3710-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2
VSMF3710-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2
Note
MOQ: minimum order quantity
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 81241 For technical questions, contact: emittertechsupport@vishay.com
Rev. 1.7, 03-Nov-09 1
www.vishay.com
VSMF3710
Vishay Semiconductors
High Speed Infrared Emitting Diode,
890 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
Forward current I
Peak forward current t
Surge forward current t
/T = 0.5, tp = 100 μs I
p
= 100 μs I
p
Power dissipation P
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature Acc. figure 8, J-STD-020 T
Thermal resistance junction/ambient J-STD-051, soldered on PCB R
Note
T
= 25 °C, unless otherwise specified
amb
180
160
140
120
100
R
80
60
40
- Power Dissipation (mW)
V
P
20
21343
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 250 K/W
thJA
0
0 102030405060708090100
T
- Ambient Temperature (°C)
amb
Fig. 2 - Forward Current Limit vs. Ambient Temperature
R
F
FM
FSM
V
j
amb
stg
sd
thJA
120
100
80
60
R
= 250 K/W
thJA
40
- Forward Current (mA)
F
I
20
0
0 10 203040 50607080 90100
21344
- Ambient Temperature (°C)
T
amb
5V
100 mA
200 mA
1A
160 mW
100 °C
- 40 to + 85 °C
- 40 to + 100 °C
260 °C
250 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
= 100 mA, tp = 20 ms V
I
Forward voltage
Temperature coefficient of V
F
F
I
= 1 A, tp = 100 μs V
F
Reverse current V
Junction capacitance V
Radiant intensity
Radiant power I
Temperature coefficient of φ
e
= 0 V, f = 1 MHz, E = 0 C
R
I
= 100 mA, tp = 20 ms I
F
= 1 A, tp = 100 μs I
I
F
= 100 mA, tp = 20 ms φ
F
IF = 100 mA TKφ
IF = 1 mA TK
= 5 V I
R
F
F
VF
R
j
e
e
e
e
61022mW/sr
Angle of half intensity ϕ ± 60 deg
Peak wavelength I
Spectral bandwidth I
Temperature coefficient of λ
p
Rise time I
Fall time I
Cut-off frequency I
DC
= 100 mA λ
F
= 100 mA Δλ 40 nm
F
IF = 100 mA TKλ
= 100 mA t
F
= 100 mA t
F
= 70 mA, IAC = 30 mA pp f
p
p
r
f
c
Virtual source diameter d 0.44 mm
Note
T
= 25 °C, unless otherwise specified
amb
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com
2 Rev. 1.7, 03-Nov-09
1.4 1.6 V
2.3 V
- 1.8 mV/K
10 μA
125 pF
100 mW/sr
40 mW
- 0.35 %/K
890 nm
0.25 nm/K
30 ns
30 ns
12 MHz
Document Number: 81241
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