Vishay VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF Data Sheet
Thyristor/Diode and Thyristor/Thyristor
SUPER MAGN-A-PAK
(SUPER MAGN-A-PAK Power Modules), 500 A
PRODUCT SUMMARY
I
, I
T(AV)
F(AV)
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Vishay Semiconductors
FEATURES
• High current capability
• High surge capability
• Industrial standard package
500 A
• 3000 V
substrate
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
• Uninterruptable power supplies
isolating voltage with non-toxic
RMS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
, I
T(AV)
F(AV)
I
T(RMS)
I
TSM
2
I
t
2
I
t 15 910 kA2s
V
RRM
T
Stg
T
J
82 °C 500 A
785 A
T
C
50 Hz 17.8
60 Hz 18.7
50 Hz 1591
60 Hz 1452
Range 800 to 1600 V
Range - 40 to 150
Range - 40 to 130
82 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VSK.500
V
VOLTAGE
CODE
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
RRM/VDRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM/IDRM
AT T
J
kA
kA2s
°C
MAXIMUM
= TJ MAXIMUM
mA
100
Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 500 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
I
at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle,
non-repetitive on-state surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 kA2s
Low level value or threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance r
High level value on-state slope resistance r
Maximum on-state voltage drop V
Maximum forward voltage drop V
Maximum holding current I
Maximum latching current I
T(AV),
I
F(AV)
180° conduction, half sine wave
180° conduction, half sine wave at TC = 82 °C 785 A
t = 10 ms
I
TSM,
I
FSM
t = 8.3 ms 18.7
t = 10 ms
t = 8.3 ms 15.7
t = 10 ms
t = 8.3 ms 1452
t = 10 ms
t = 8.3 ms 1027
T(TO)1
T(TO)2
TM
FM
(16.7 % x x I
(I > x I
(16.7 % x x I
t1
(I > x I
t2
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V
H
TJ = 25 °C, anode supply 12 V resistive load
L
No voltage
reapplied
100 % V
reapplied
RRM
Sinusoidal
half wave,
No voltage
reapplied
100 % V
RRM
initial T
= TJ maximum
J
reapplied
< I < x I
T(AV)
), TJ = TJ maximum 0.93
T(AV)
< I < x I
T(AV)
), TJ = TJ maximum 0.32
T(AV)
), TJ = TJ maximum 0.85
T(AV)
), TJ = TJ maximum 0.36
T(AV)
500 A
82 °C
17.8
15.0
1591
1125
500
1000
kA
m
mA
kA
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise of turned-on current dI/dt T
Typical delay time t
Typical turn-off time t
d
q
= TJ maximum, ITM = 400 A, V
J
applied 1000 A/μs
DRM
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
I
= 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs,
TM
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
V
R
, TJ = 25 °C
DRM
2.0
μs
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage
RMS insulation voltage V
Maximum peak reverse and
off-state leakage current
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94420
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dV/dt T
INS
,
I
RRM
I
DRM
= 130 °C, linear to VD = 80 % V
J
DRM
1000 V/μs
t = 1 s 3000 V
TJ = TJ maximum, rated V
DRM/VRRM
applied 100 mA
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10
VSKT500-..PbF, VSKH500-..PbF, VSKL500-..PbF
Thyristor/Diode and Thyristor/Thyristor
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules), 500 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum peak average gate power P
Maximum peak positive gate current +I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
Maximum DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GT
GT
GD
GD
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
SMAP to heatsink
Mounting torque ± 10 %
busbar to SMAP 12 to 15
Approximate weight 1500 g
Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK
R
R
T
Stg
thJC
thC-hs
TJ = TJ maximum, tp 5 ms 10
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp 5 ms
GM
TJ = 25 °C, Vak 12 V
TJ = TJ maximum 10 mA
J
DC operation 0.065
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound.
200 mA
0.25 V
- 40 to 130
- 40 to 150
0.02
6 to 8
3.0 A
20
5.0
3.0 V
K/W
Nm
W
V
°C
R
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
Note
• Table shows the increment of thermal resistance R
Document Number: 94420 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com
CONDUCTION
thJC
180° 0.009 0.006
120° 0.011 0.011
90° 0.014 0.015
60° 0.021 0.022
30° 0.037 0.038
when devices operate at different conduction angles than DC
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
T
= TJ maximum K/W
J
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