Vishay VSKD600 Series Data Sheet

(SUPER MAGN-A-PAK Power Modules)

SUPER MAGN-A-PAK

PRODUCT SUMMARY

I

F(AV)

Type Modules - Diode, High Voltage

Standard Diodes, 600 A

FEATURES

• High current capability

• High surge capability

• High voltage ratings up to 2000 V

600 A

• 3000 V

• Industrial standard package

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

TYPICAL APPLICATIONS

• Rectifying bridge for large motor drives

• Rectifying bridge for large UPS

isolating voltage with non-toxic substrate

RMS

VSKD600 Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

2

I

t 18 050 kA2s

V

RRM

, T

T

Stg

J

T

C

T

C

50 Hz 19 000

60 Hz 20 100

50 Hz 1805

60 Hz 1683

Range 800 to 2000 V

Range - 40 to 150 °C

600 A

100 °C

942 A

100 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

VSKD600..

, MAXIMUM REPETITIVE

VOLTAGE

CODE

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

AT T

A

kA2s

MAXIMUM

RRM

MAXIMUM

J

mA

50

Document Number: 93583 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

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VSKD600 Series

Vishay Semiconductors

Standard Diodes, 600 A

(SUPER MAGN-A-PAK Power Modules)

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 18 050 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum forward voltage drop V

I

F(AV)

F(RMS)

180° conduction, half sine wave

180° conduction, half sine wave at TC = 100 °C 942 A

t = 10 ms

I

FSM

t = 8.3 ms 20.1

t = 10 ms

t = 8.3 ms 17.2

t = 10 ms

t = 8.3 ms 1683

t = 10 ms

t = 8.3 ms 1230

F(TO)1

F(TO)2

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

f1

(I >  x I

f2

Ipk = 1800 A, TJ = 25 °C, tp = 10 ms sine pulse 1.45 V

FM

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I <  x I

F(AV)

), TJ = TJ maximum 0.77

F(AV)

< I <  x I

F(AV)

), TJ = TJ maximum 0.25

F(AV)

), TJ = TJ maximum 0.70

F(AV)

), TJ = TJ maximum 0.28

F(AV)

600 A

100 °C

19.0

16.2

1805

1319

kA

m

kA

2

s

V

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

RMS insulation voltage V

Maximum peak reverse and
off-state leakage current

I

RRM

INS

t = 1 s 3000 V

TJ = TJ maximum, rated V

applied 50 mA

RRM

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating and storage
temperature range

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink

Mounting torque
± 10 %

SMAP to heatsink

busbar to SMAP 12 to 15

Approximate weight 1500 g

Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK

T

R

, T

J

R

thJC

thC-hs

Stg

DC operation 0.065

A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound.

- 40 to 150 °C

K/W

0.02

6 to 8

Nm

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80

90

100

110

120

130

140

150

0 100 200 300 400 500 600 7

00

30°

60°

90°

120°

180°

Maximum Allowable Case Temperature (°C

)

Conduction Angle

Average Forward Curren t (A)

VSKD600.. Series
R (DC) = 0.065 K/W

thJC

80

90

100

110

120

130

140

150

0 200 400 600 800 10

00

DC

30°

60°

90°

120°

180°

Max imu m Allo wab le Case Temperat ure (°C

)

Conduction Period

Average Forward Current (A)

VSKD600.. Series
R (DC) = 0.065 K/W

thJC

0

100

200

300

400

500

600

700

0 100 200 300 400 500 600

Average Forward Current (A)

RMS Limit

Maximum Average Forward Power Loss (W)

Conduction Angle

180°
120°

90°
60°
30°

VSKD600.. Series
Per Junction
T = 150°C

J

0

100

200

300

400

500

600

700

800

900

1000

0 200 400 600 800 10

00

DC
180°
120°

90°

60°

30°

Average Forward Current (A)

RMS Limit

Maximum Average Forward Power Loss (W)

Conduction Perio d

VSKD600.. Series
Per Junction
T = 150°C

J

VSKD600 Series

Standard Diodes, 600 A

Vishay Semiconductors

(SUPER MAGN-A-PAK Power Modules)

R

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

180° 0.009 0.006

120° 0.011 0.011

90° 0.014 0.015

60° 0.021 0.022

30° 0.037 0.038

when devices operate at different conduction angles than DC

thJC

= TJ maximum K/W

T

J

Fig. 1 - Current Ratings Characteristics

Document Number: 93583 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

Fig. 2 - Current Ratings Characteristics

Fig. 3 - Forward Power Loss Characteristics

Fig. 4 - Forward Power Loss Characteristics

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