Vishay VSK.430..PbF Series Data Sheet
Thyristor/Diode and Thyristor/Thyristor
SUPER MAGN-A-PAK
(SUPER MAGN-A-PAK Power Modules), 430 A
PRODUCT SUMMARY
I
T(AV)
430 A
VSK.430..PbF Series
Vishay Semiconductors
FEATURES
• High current capability
• High surge capability
• High voltage ratings up to 2000 V
• 3000 V
substrate
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
• Uninterruptable power supplies
• Wind mill
isolating voltage with non-toxic
RMS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
2
I
t 12 320 kA2s
V
RRM
T
J
T
Stg
82 °C 430 A
675 A
T
C
50 Hz 15.7
60 Hz 16.4
50 Hz 1232
60 Hz 1125
Range 1600 to 2000 V
Range
82 °C
- 40 to 150
- 40 to 130
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VSK.430..
V
RRM/VDRM
VOLTAGE
CODE
16 1600 1700
20 2000 2100
REPETITIVE PEAK
REVERSE VOLTAGE
, MAXIMUM
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM/IDRM
= TJ MAXIMUM
AT T
J
kA
kA2s
°C
MAXIMUM
mA
10018 1800 1900
Document Number: 93748 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VSK.430..PbF Series
Vishay Semiconductors
Thyristor/Diode and Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 430 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
I
at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 12 320 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope
resistance
Maximum on-state voltage drop V
Maximum forward voltage drop V
Maximum holding current I
Typical latching current I
T(AV),
I
F(AV)
180° conduction, half sine wave
180° conduction, half sine wave at TC = 82 °C 675 A
t = 10 ms
I
TSM,
I
FSM
t = 8.3 ms 16.4
t = 10 ms
t = 8.3 ms 13.8
t = 10 ms
t = 8.3 ms 1125
t = 10 ms
t = 8.3 ms 795
F(TO)1
F(TO)2
r
(16.7 % x x I
(I > x I
(16.7 % x x I
f1
(I > x I
f2
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.65 V
TM
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.65 V
FM
H
TJ = 25 °C, anode supply 12 V resistive load
L
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < x I
T(AV)
), TJ = TJ maximum 1.06
T(AV)
< I < x I
T(AV)
), TJ = TJ maximum 0.45
T(AV)
), TJ = TJ maximum 0.96
T(AV)
), TJ = TJ maximum 0.51
T(AV)
430 A
82 °C
15.7
13.2
1232
871
500
1000
kA
m
mA
kA
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise of turned-on current dI/dt T
Typical delay time t
Typical turn-off time t
d
q
= TJ maximum, ITM = 400 A, V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 750 A, TJ = TJ maximum, dI/dt = - 60 A/μs
= 50, dV/dt = 20 V/μs, Gate 0 V 100
V
R
applied 1000 A/μs
DRM
2.0
200
μs
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
RMS insulation voltage V
Maximum peak reverse and
off-state leakage current
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93748
2 DiodesAmericas@vishay.com
dV/dt T
INS
,
I
RRM
I
DRM
= 130 °C, linear to VD = 80 % V
J
DRM
1000 V/μs
t = 1 s 3000 V
TJ = TJ maximum, rated V
DRM/VRRM
applied 100 mA
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10
VSK.430..PbF Series
Thyristor/Diode and Thyristor/Thyristor
Vishay Semiconductors
(SUPER MAGN-A-PAK Power Modules), 430 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
Mounting torque ± 10 %
Approximate weight 1500 g
Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK
R
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
Note
• The table above shows the increment of thermal resistance R
CONDUCTION
thJC
180° 0.009 0.006
120° 0.011 0.011
90° 0.014 0.015
60° 0.021 0.022
30° 0.037 0.038
SMAP to heatsink
busbar to SMAP 12 to 15
R
R
T
J
Stg
thJC
thC-hs
DC operation 0.065
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
= TJ maximum K/W
T
J
when devices operate at different conduction angles than DC
thJC
- 40 to 130
- 40 to 150
0.02
6 to 8
°C
K/W
Nm
Document Number: 93748 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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