Vishay VSK.430..PbF Series Data Sheet

Thyristor/Diode and Thyristor/Thyristor

SUPER MAGN-A-PAK

(SUPER MAGN-A-PAK Power Modules), 430 A

PRODUCT SUMMARY

I

T(AV)

430 A

VSK.430..PbF Series

Vishay Semiconductors

FEATURES

• High current capability

• High surge capability

• High voltage ratings up to 2000 V

• 3000 V
substrate

• Industrial standard package

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

TYPICAL APPLICATIONS

• Motor starters

• DC motor controls - AC motor controls

• Uninterruptable power supplies

• Wind mill

isolating voltage with non-toxic

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

t 12 320 kA2s

V

RRM

T

J

T

Stg

82 °C 430 A

675 A

T

C

50 Hz 15.7

60 Hz 16.4

50 Hz 1232

60 Hz 1125

Range 1600 to 2000 V

Range

82 °C

- 40 to 150

- 40 to 130

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

VSK.430..

V

RRM/VDRM

VOLTAGE

CODE

16 1600 1700

20 2000 2100

REPETITIVE PEAK

REVERSE VOLTAGE

, MAXIMUM

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM/IDRM

= TJ MAXIMUM

AT T

J

kA

kA2s

°C

MAXIMUM

mA

10018 1800 1900

Document Number: 93748 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

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VSK.430..PbF Series

Vishay Semiconductors

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 430 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current

I

at case temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 12 320 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope
resistance

Maximum on-state voltage drop V

Maximum forward voltage drop V

Maximum holding current I

Typical latching current I

T(AV),

I

F(AV)

180° conduction, half sine wave

180° conduction, half sine wave at TC = 82 °C 675 A

t = 10 ms

I

TSM,

I

FSM

t = 8.3 ms 16.4

t = 10 ms

t = 8.3 ms 13.8

t = 10 ms

t = 8.3 ms 1125

t = 10 ms

t = 8.3 ms 795

F(TO)1

F(TO)2

r

(16.7 % x  x I

(I >  x I

(16.7 % x  x I

f1

(I >  x I

f2

Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.65 V

TM

Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.65 V

FM

H

TJ = 25 °C, anode supply 12 V resistive load

L

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I <  x I

T(AV)

), TJ = TJ maximum 1.06

T(AV)

< I <  x I

T(AV)

), TJ = TJ maximum 0.45

T(AV)

), TJ = TJ maximum 0.96

T(AV)

), TJ = TJ maximum 0.51

T(AV)

430 A

82 °C

15.7

13.2

1232

871

500

1000

kA

m

mA

kA

2

s

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum rate of rise of turned-on current dI/dt T

Typical delay time t

Typical turn-off time t

d

q

= TJ maximum, ITM = 400 A, V

J

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 750 A, TJ = TJ maximum, dI/dt = - 60 A/μs

= 50, dV/dt = 20 V/μs, Gate 0 V 100 

V

R

applied 1000 A/μs

DRM

2.0

200

μs

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

RMS insulation voltage V

Maximum peak reverse and
off-state leakage current

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dV/dt T

INS

,

I

RRM

I

DRM

= 130 °C, linear to VD = 80 % V

J

DRM

1000 V/μs

t = 1 s 3000 V

TJ = TJ maximum, rated V

DRM/VRRM

applied 100 mA

, [e-mail], [e-mail] Revision: 02-Jul-10

VSK.430..PbF Series

Thyristor/Diode and Thyristor/Thyristor

Vishay Semiconductors

(SUPER MAGN-A-PAK Power Modules), 430 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink

Mounting torque ± 10 %

Approximate weight 1500 g

Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK

R

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

180° 0.009 0.006

120° 0.011 0.011

90° 0.014 0.015

60° 0.021 0.022

30° 0.037 0.038

SMAP to heatsink

busbar to SMAP 12 to 15

R

R

T

J

Stg

thJC

thC-hs

DC operation 0.065

A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.

= TJ maximum K/W

T

J

when devices operate at different conduction angles than DC

thJC

- 40 to 130

- 40 to 150

0.02

6 to 8

°C

K/W

Nm

Document Number: 93748 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

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VSK.430..PbF Series

70

80

90

100

110

120

130

010020030040050

30°

60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Cond uc tio n An gle

VSK .430 ..PbF Se ries
R (DC) = 0.065 K/W

th JC

70

80

90

100

110

120

130

010020030040050060070

0

DC

30°

60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (

°C

)

Conduction Period

VSK.430..PbF Series
R (DC ) = 0.065 K/W

thJC

0

100

200

300

400

500

600

700

01002003004005

00

RMS Limit

Conduction Angle

180°
120°

90°
60°
30°

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

VSK .430..PbF Series
Per Junction
T = 130°C

J

6000

7000

8000

9000

10000

11000

12000

13000

14000

15000

16000

0.01 0.1

1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s)

Maximum Non Repetitive Surge Cu rren t

Versus Pul se T rain Duration. Control

Of Conduc tion May Not Be Maintained .

Initial T = 130° C

No Voltage Reapplied
Rated V Reapplied

RRM

J

VSK .430..PbF Series
Per Junction

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 430 A

1000

900

800

700

600

500

400

300

200

100

0

Maximum Average On-state Power Loss (W)

Fig. 4 - On-State Power Loss Characteristics

15000

14000

13000

12000

11000

10000

9000

8000

7000

Peak Half Sine Wave On-state Current (A)

6000

Number Of Equa l Amplitude H alf Cycle C urrent Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

DC
180°
120°

90°

60°

30°

RMS Limit

VSK.430..PbF Series
Per Juncti on
T = 130°C

J

0 100 20 0 300 400 500 600 70

Average O n-state Current (A)

At Any Rated Load Condition And With

Rat e d V A p plied F ol l ow in g Sur ge .

RRM

VSK.430..PbF Series
Per Junction

11010

Conduction Period

In it ial T = 130 °C

J

@ 6 0 Hz 0.0083 s
@ 5 0 Hz 0.0100 s

0

0

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Fig. 3 - On-State Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

, [e-mail], [e-mail] Revision: 02-Jul-10

0 20406080100120

Max imum Al lowable Am bient Te mpe ratu re ( °C

)

R

=

0

.

0

5

K

/

W

­D

e

l

t

a

R

t

h

S

A

0

.

0

9

K

/

W

0

.

1

2

K

/

W

0

.

1

6

K

/

W

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

6

K/

W

0

100

200

300

400

500

600

700

800

0 100 200 300 400 500 600 700

180°
120°

90°
60°
30°

Total RMS Output Current (A)

Maximum Total On-state Power Loss (W

)

Conduct ion Angle

VSK .43 0. .PbF Serie s

Per M o dul e

T = 130°C

J

020406080100120

Maxi mum Allowab le Ambient Temperature (°C )

R

=

1

K

/

W

­D

e

l

t

a

R

t

h

S

A

1

.

5

K

/

W

2

K

/

W

3

K

/

W

5

K

/

W

10

K/

W

1

5

K

/

W

0

500

1000

1500

2000

2500

3000

0 100 200 300 400 500 600 700 800 900

Tot al Ou tput Cur ren t ( A)

Maximum Total Power Loss (W)

180°

(Sine)

180°

(Rect )

2 x VSK.430..PbF Series
Single Phase Bridge

Connected

T = 130

°C

J

VSK.430..PbF Series

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 430 A

Fig. 7 - On-State Power Loss Characteristics

Vishay Semiconductors

Document Number: 93748 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

Fig. 8 - On-State Power Loss Characteristics

5000

4500

4000

3500

3000

2500

2000

1500

1000

Maximum Total Power Loss (W)

500

0

0 200 400 600 800 1000 1200 1400

3 x VSK.430..PbF Series

Three Phase Bridge

Total Output Current (A)

Fig. 9 - On-State Power Loss Characteristics

R

t

h

S

A

0

=

.

0

0

1

.

0

K

0

120°

(Rect)

Conn ected

T = 130°C

J

/

5

W

K

/

0

.

0

2

K

/

W

0

.

0

3

K

/

W

0

.

0

5

K

/

W

0

.

1

K

/

W

0

2

.

K

/

W

W

­D

e

l

t

a

R

0 20406080100120

Maximum Al lowable Ambient Temperature ( °C)

, [e-mail], [e-mail] 5

VSK.430..PbF Series

100

1000

10000

0.511.522.533

.5

T = 25 °C

J

Instantaneous On-state Current (A)

In stan tan eo us O n -sta te Vo ltage ( V)

T = 130°C

J

VSK.430..PbF Series
Per Junctio n

Device code

1 - Module type

2 - Circuit configuration (see end of datasheet)

3

- Current rating

4 - Voltage code x 100 = V

RRM

(see Voltage Ratings table)

5 - Lead (Pb)-free

4132 5

VSK T 430 - 20 PbF

Vishay Semiconductors

Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance Z

100

Rectangular gate pulse
a) Recommended load line for

rated di/dt : 20V, 10ohms; tr< =1 µ s

b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

0.1

0.001 0. 01 0.1 1 10 10

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 430 A

0.1
VSK.430 ..PbF S er ies
Per Junct ion

thJC

0.01

Ste ady S tat e Value:

R = 0.065 K/W

thJC

(DC Operation)

(4)

0

VGD

(b)

Tj=25 °C

Tj=130

°C

IGD

VSK.430..PbF Series Fre quency L imi ted by PG( AV)

Instantaneous Ga te Current (A)

Fig. 12 - Gate Characteristics

Tr ansi ent The rma l I mpedan ce Z (K/W)

0.001

0.001 0.01 0.1 1 10 10

Square Wave Pulse Duration (s)

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(a)

Tj=-40 °C

(2) (3)

(1)

Characteristics

thJC

0

ORDERING INFORMATION TABLE

Note

• To order the optional hardware go to www.vishay.com/doc?95172

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, [e-mail], [e-mail] Revision: 02-Jul-10

+

7

(K2)

6(G2)

-

4

(K1)

5(G1)

~

1

2

3

+

7(K2)
6(G2)

-

~

1

2

3

+

-

4(K1)
5(G1)

~

1

2

3

VSKT...

VSKH...

VSKL...

VSK.430..PbF Series

Thyristor/Diode and Thyristor/Thyristor

Vishay Semiconductors

(SUPER MAGN-A-PAK Power Modules), 430 A

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95283

Document Number: 93748 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

, [e-mail], [e-mail] 7

Super MAGN-A-PAK Thyristor/Diode

52 (2.05)

60.0 (2.36)

48.0 (1.89)

31.0

(1.22)

50.0

(1.97)

44.0

(1.73)

M10

Fast-on tabs

2.8 x 0.8 (0.11 x 0.03)

20.1
(0.78)

36.4 (1.14) 4.5 (0.20)

54

6

5, 6 = Gate
4, 7 = Cathode

7

28.0
(1.10)

26.0

(0.98)

26.0

(0.98)

112.0 (4.41)

124.0 (4.88)

149.0 (5.67)

1.0 (0.039)

32

1

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Document Number: 95283 For technical questions, contact: [e-mail]
Revision: 20-Mar-08 1

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

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