Vishay VSK.250 Series, VSK.270 Series, VSK.320 Series Data Sheet

Standard Recovery Diodes, 250 A to 320 A

MAGN-A-PAK

PRODUCT SUMMARY

I

F(AV)

Type Modules - Diode, High Voltage

VSK.250, VSK.270, VSK.320 Series

Vishay Semiconductors

(MAGN-A-PAK Power Modules)

FEATURES

• High voltage

• Electrically isolated base plate

250 A to 320 A

• 3000 V

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

This new VSK series of MAGN-A-PAKs uses high voltage
power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode. These modules are intended for general
purpose applications such as battery chargers, welders and
plating equipment and where high voltage and high current
are required (motor drives, etc.).

isolating voltage

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.250.. VSK.270.. VSK.320.. UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

2

I

t 2460 3980 5110 kA2s

V

RRM

T

J

Document Number: 93581 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

T

C

50 Hz 7015 8920 10 110

60 Hz 7345 9430 10 580

50 Hz 246 398 511

60 Hz 225 363 466

250 270 320 A

100 100 100 °C

393 424 502

A

kA2s

400 to 3000 V

- 40 to 150 °C

, [e-mail], [e-mail] 1

VSK.250, VSK.270, VSK.320 Series

Vishay Semiconductors

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

MAXIMUM REPETITIVE

TYPE NUMBER

VOLTAGE

CODE

RRM,

PEAK REVERSE VOLTAGE

V

04 400 500

VSK.250
VSK.270
VSK.320

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

VSK.270 30 3000 3100

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VSK.250 VSK.270 VSK.320 UNITS

Maximum average forward
current at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle
forward, non-repetitive
surge current

2

Maximum I

Maximum I

Low level value of
threshold voltage

High level value of
threshold voltage

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 kA2s

V

V

Low level forward
slope resistance

High level forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave

As AC switch 393 424 502

t = 10 ms

t = 8.3 ms 7345 9340 10 580

t = 10 ms

t = 8.3 ms 6180 7850 8900

t = 10 ms

t = 8.3 ms 225 363 466

t = 10 ms

t = 8.3 ms 159 257 330

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I

IFM =  x I
Average power = V

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

< I <  x I

F(AV)

), TJ = TJ maximum 0.92 0.87 0.86

F(AV)

< I <  x I

F(AV)

), TJ = TJ maximum 0.49 0.81 0.44

F(AV)

, TJ = TJ maximum, 180° conduction

F(AV)

F(TO)

x I

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

Sinusoidal half wave,
initial T

= T

J

J m

),

F(AV)

),

F(AV)

+ rf x (I

F(AV)

F(RMS)

aximum

2

)

I

RRM

V

250 270 320 A

100 100 100 °C

7015 8920 10 110

5900 7500 8500

246 398 511

174 281 361

0.79 0.74 0.69

0.63 0.94 0.59

1.29 1.48 1.28 V

MAXIMUM

AT 150 °C

mA

50

A

kA2s

V

m

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse
leakage current

RMS insulation voltage V

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93581
2 [e-mail]

I

RRM

INS

TJ = 150 °C 50 mA

50 Hz, circuit to base, all terminals shorted, t = 1 s 3000 V

, [e-mail], [e-mail] Revision: 02-Jul-10

VSK.250, VSK.270, VSK.320 Series

Standard Recovery Diodes, 250 A to 320 A

Vishay Semiconductors

(MAGN-A-PAK Power Modules)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating and storage
temperature range

Maximum thermal resistance,
junction to case per junction

Maximum resistance, case to heatsink
per module

Mounting torque
± 10 %

Approximate weight

Case style MAGN-A-PAK

MAP to heatsink

busbar to MAP 8 to 10

T

, T

J

Stg

DC operation 0.16 0.125

Mounting surface flat, smooth and
greased

A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow for
the spread of the compound.

R

R

thJC

thCS

VSK.250 VSK.270 VSK.320

R CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION

AT T

MAXIMUM

DEVICE

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSK.250 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033

VSK.320 0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033

Note

• The table above shows the increment of thermal resistance R

J

when devices operate at different conduction angles than DC

thJC

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

VALUES

- 40 to 150 °C

0.035

4 to 6

800 g

30 oz.

UNITS

K/W

Nm

UNITS

K/WVSK.270 0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033

Document Number: 93581 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

, [e-mail], [e-mail] 3

VSK.250, VSK.270, VSK.320 Series

80

90

100

110

120

130

140

150

0 50 100 150 200 250 300

30°

60°

90°

120°

180°

Maximum Allowable Case Temperature (°C)

Conduction Angle

Average Forward Current (A)

VSK.250 .. Seri e s
R (DC) = 0.16 K/ W

thJC

80

90

100

110

120

130

140

150

0 50 100 150 200 250 300 350 400

DC

30°

60°

90°

120°

180°

Maximu m Allow able C ase Tem perature (°C)

Conduction Period

Average Forward Current (A)

VSK.250 .. Se ri e s
R (DC) = 0.16 K/ W

thJC

0

50

100

150

200

250

300

0 50 100 150 200 250

Ave rag e Forw ard Cu rre nt (A )

RM S Lim it

Maximum Ave rag e Fo rward Power Loss (W)

Cond uct ion Ang le

180°
120°

90°
60°
30°

VSK.250.. Serie s
T = 15 0° C

J

0 25 50 75 100 125 150

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

0

2

K

/

W

­D

e

l

t

a

R

t

h

S

A

0

.

0

8

K

/

W

0

.

2

K

/

W

0

.

2

5

K

/

W

0

.

4

K

/

W

0

.

1

2

K

/

W

0

.

6

K

/

W

0

100

200

300

400

500

600

0 50 100 150 200 250 3 00 350 400

Total RMS Output Current (A)

Maximum Tota l Forward Po wer Loss (W)

180°

(Sine)

DC

VSK.25 0.. Seri e s

Pe r Ju nc t io n

T = 15 0° C

J

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

Fig. 3 - Forward Power Loss Characteristics

450

400

350

300

250

200

150

100

50

0

Maximum Average Forward Power Loss (W)

Fig. 4 - Forward Power Loss Characteristics

DC
180°
120°

90°

60°

30°

RM S Li m i t

0 50 10 0 150 200 250 300 350 400

Average Forward Current (A)

Conduction Period

VSK.250.. Series
T = 150°C

J

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93581
4 [e-mail]

Fig. 5 - Forward Power Loss Characteristics

, [e-mail], [e-mail] Revision: 02-Jul-10