Vishay VSK.250 Series, VSK.270 Series, VSK.320 Series Data Sheet

Standard Recovery Diodes, 250 A to 320 A

MAGN-A-PAK

PRODUCT SUMMARY

I

F(AV)

Type Modules - Diode, High Voltage

VSK.250, VSK.270, VSK.320 Series

Vishay Semiconductors

(MAGN-A-PAK Power Modules)

FEATURES

• High voltage

• Electrically isolated base plate

250 A to 320 A

• 3000 V

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

This new VSK series of MAGN-A-PAKs uses high voltage
power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode. These modules are intended for general
purpose applications such as battery chargers, welders and
plating equipment and where high voltage and high current
are required (motor drives, etc.).

isolating voltage

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.250.. VSK.270.. VSK.320.. UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

2

I

t 2460 3980 5110 kA2s

V

RRM

T

J

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Revision: 02-Jul-10 [e-mail]

T

C

50 Hz 7015 8920 10 110

60 Hz 7345 9430 10 580

50 Hz 246 398 511

60 Hz 225 363 466

250 270 320 A

100 100 100 °C

393 424 502

A

kA2s

400 to 3000 V

- 40 to 150 °C

, [e-mail], [e-mail] 1

VSK.250, VSK.270, VSK.320 Series

Vishay Semiconductors

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

MAXIMUM REPETITIVE

TYPE NUMBER

VOLTAGE

CODE

RRM,

PEAK REVERSE VOLTAGE

V

04 400 500

VSK.250
VSK.270
VSK.320

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

VSK.270 30 3000 3100

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VSK.250 VSK.270 VSK.320 UNITS

Maximum average forward
current at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle
forward, non-repetitive
surge current

2

Maximum I

Maximum I

Low level value of
threshold voltage

High level value of
threshold voltage

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 kA2s

V

V

Low level forward
slope resistance

High level forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave

As AC switch 393 424 502

t = 10 ms

t = 8.3 ms 7345 9340 10 580

t = 10 ms

t = 8.3 ms 6180 7850 8900

t = 10 ms

t = 8.3 ms 225 363 466

t = 10 ms

t = 8.3 ms 159 257 330

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I

IFM =  x I
Average power = V

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

< I <  x I

F(AV)

), TJ = TJ maximum 0.92 0.87 0.86

F(AV)

< I <  x I

F(AV)

), TJ = TJ maximum 0.49 0.81 0.44

F(AV)

, TJ = TJ maximum, 180° conduction

F(AV)

F(TO)

x I

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

Sinusoidal half wave,
initial T

= T

J

J m

),

F(AV)

),

F(AV)

+ rf x (I

F(AV)

F(RMS)

aximum

2

)

I

RRM

V

250 270 320 A

100 100 100 °C

7015 8920 10 110

5900 7500 8500

246 398 511

174 281 361

0.79 0.74 0.69

0.63 0.94 0.59

1.29 1.48 1.28 V

MAXIMUM

AT 150 °C

mA

50

A

kA2s

V

m

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse
leakage current

RMS insulation voltage V

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I

RRM

INS

TJ = 150 °C 50 mA

50 Hz, circuit to base, all terminals shorted, t = 1 s 3000 V

, [e-mail], [e-mail] Revision: 02-Jul-10

VSK.250, VSK.270, VSK.320 Series

Standard Recovery Diodes, 250 A to 320 A

Vishay Semiconductors

(MAGN-A-PAK Power Modules)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating and storage
temperature range

Maximum thermal resistance,
junction to case per junction

Maximum resistance, case to heatsink
per module

Mounting torque
± 10 %

Approximate weight

Case style MAGN-A-PAK

MAP to heatsink

busbar to MAP 8 to 10

T

, T

J

Stg

DC operation 0.16 0.125

Mounting surface flat, smooth and
greased

A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow for
the spread of the compound.

R

R

thJC

thCS

VSK.250 VSK.270 VSK.320

R CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION

AT T

MAXIMUM

DEVICE

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSK.250 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033

VSK.320 0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033

Note

• The table above shows the increment of thermal resistance R

J

when devices operate at different conduction angles than DC

thJC

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

VALUES

- 40 to 150 °C

0.035

4 to 6

800 g

30 oz.

UNITS

K/W

Nm

UNITS

K/WVSK.270 0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033

Document Number: 93581 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

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VSK.250, VSK.270, VSK.320 Series

80

90

100

110

120

130

140

150

0 50 100 150 200 250 300

30°

60°

90°

120°

180°

Maximum Allowable Case Temperature (°C)

Conduction Angle

Average Forward Current (A)

VSK.250 .. Seri e s
R (DC) = 0.16 K/ W

thJC

80

90

100

110

120

130

140

150

0 50 100 150 200 250 300 350 400

DC

30°

60°

90°

120°

180°

Maximu m Allow able C ase Tem perature (°C)

Conduction Period

Average Forward Current (A)

VSK.250 .. Se ri e s
R (DC) = 0.16 K/ W

thJC

0

50

100

150

200

250

300

0 50 100 150 200 250

Ave rag e Forw ard Cu rre nt (A )

RM S Lim it

Maximum Ave rag e Fo rward Power Loss (W)

Cond uct ion Ang le

180°
120°

90°
60°
30°

VSK.250.. Serie s
T = 15 0° C

J

0 25 50 75 100 125 150

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

0

2

K

/

W

­D

e

l

t

a

R

t

h

S

A

0

.

0

8

K

/

W

0

.

2

K

/

W

0

.

2

5

K

/

W

0

.

4

K

/

W

0

.

1

2

K

/

W

0

.

6

K

/

W

0

100

200

300

400

500

600

0 50 100 150 200 250 3 00 350 400

Total RMS Output Current (A)

Maximum Tota l Forward Po wer Loss (W)

180°

(Sine)

DC

VSK.25 0.. Seri e s

Pe r Ju nc t io n

T = 15 0° C

J

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

Fig. 3 - Forward Power Loss Characteristics

450

400

350

300

250

200

150

100

50

0

Maximum Average Forward Power Loss (W)

Fig. 4 - Forward Power Loss Characteristics

DC
180°
120°

90°

60°

30°

RM S Li m i t

0 50 10 0 150 200 250 300 350 400

Average Forward Current (A)

Conduction Period

VSK.250.. Series
T = 150°C

J

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Fig. 5 - Forward Power Loss Characteristics

, [e-mail], [e-mail] Revision: 02-Jul-10

0 255075100125150

Maximum Allowa ble Ambient Temperature (°C)

0

.

0

8

K

/

W

0

.

1

K

/

W

0

.

1

6

K

/

W

0

.

2

5

K

/

W

0

.

0

3

K

/

W

0

.

0

5

K

/

W

0

.

3

5

K

/

W

R

=

0
.

0

1

K

/

W

­D

e

l

t

a

R

t

h

S

A

0

200

400

600

800

1000

1200

0 100 200 300 400 500

Total Output Current (A)

Ma ximu m To tal Powe r Loss (W)

180°

(Sine)

180°

(Re c t)

2 x VSK.250.. Serie s

Single Phase Bridge

Connec ted

T = 1 5 0 ° C

J

0 255075100125150

Maximum Allowable Ambient Temperature (°C)

0

.

2

5

K

/

W

R

=

0

.

0

0

5

K

/

W

-

D

e

l

t

a

R

t

h

S

A

0

.

0

2

K

/

W

0

.

0

4

K

/

W

0

.

0

6

K

/

W

0

.

0

8

K

/

W

0

.

1

2

K

/

W

0

.

1

6

K

/

W

0

.

3

5

K

/

W

0

200

400

600

800

1000

1200

1400

1600

1800

0 100200300400500600700800

Total Output Current (A)

Maximum Total Power Loss (W)

120°

(Rec t)

3 x VSK.250.. Se ries
Three Phase Bridge

Connec ted

T = 1 50 ° C

J

1500

2000

2500

3000

3500

4000

4500

5000

5500

6000

6500

110100

Peak Half Sine Wave Forward Current (A)

Nu mb e r O f Eq u a l Am pli tu d e Ha lf C yc le Cu rre nt Pul se s (N)

Initia l T = 150°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

VSK.250.. Serie s
Pe r Ju nc t io n

At Any Rated Load Cond itio n And With

Rated V Applied Following Surge.

RRM

VSK.250, VSK.270, VSK.320 Series

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

Fig. 6 - Forward Power Loss Characteristics

Vishay Semiconductors

Document Number: 93581 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

Fig. 8 - Maximum Non-Repetitive Surge Current Fig. 9 - Maximum Non-Repetitive Surge Current

Fig. 7 - Forward Power Loss Characteristics

7000

Maximum Non Repetitive Surge Current

6500

6000

5500

5000

4500

4000

3500

3000

2500

2000

Peak Half Sine Wave Forward Current (A)

, [e-mail], [e-mail] 5

1500

0.01 0.1 1

Versus Pulse Train Duration.

No Volt a g e Rea pp lied

Ra t e d V Re a p p l i e d

VSK.250 .. Seri e s
Pe r J u nc t io n

Pu lse Tr ai n Dura t io n ( s)

Init ia l T = 150°C

J

RRM

VSK.250, VSK.270, VSK.320 Series

0.001

0.01

0.1

1

0.001 0.01 0.1 1 10 100

Sq ua re Wave Pulse Durat ion (s)

thJC

VSK.250.. Seri es
Pe r J u n ct i o n

Steady Sta te Value:

R = 0. 16 K/ W

(DC Operation)

thJC

Transient Thermal Impedance Z (K/W)

80

90

100

110

120

130

140

150

0 50 100 150 200 250 300

30°

60°

90°

120°

180°

Maximum Allo wable Case Temperature (°C)

Conduction Angle

Average Forward Current (A)

VSK.270 .. Se ri e s
R (DC) = 0.125 K/ W

thJC

0

50

100

150

200

250

300

350

400

450

500

0 50 100 1 50 2 00 250 300 35 0 400 450

DC
180°
120°

90°

60°

30°

Average Forward Current (A)

RM S Li m i t

Maximum Average Forward Power Loss (W)

Co nduct ion Period

VSK.270.. Seri e s
T = 1 50 ° C

J

Vishay Semiconductors

10000

T = 2 5 ° C

J

1000

100

VSK.250.. Se rie s

Instantaneous Forward Current (A)

10

0.5 1 1.5 2 2.5 3 3.5 4

Instantaneous Forward Voltage (V)

Fig. 10 - Forward Voltage Drop Characteristics

Fig. 11 - Thermal Impedance Z

Pe r Ju n c t io n

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

150

140

T = 1 5 0 °C

J

Characteristics

thJC

130

120

110

100

90

80

Maximum Allowab le Case Temperature (°C)

0 100 200 300 400 500

Average Forward Current (A)

Fig. 13 - Current Ratings Characteristics

400

350

180°
120°

300

250

200

150

100

Maximum Average Forward Power Loss (W)

90°
60°
30°

50

0

0 50 100 150 200 250 300

Average Forward Current (A)

Fig. 14 - Forward Power Loss Characteristics

VSK.270.. Serie s
R (DC ) = 0.125 K/ W

thJC

30°

60°

90°

120°

Conduction Period

180°

DC

RM S Li m it

Conduction Angle

VSK.270.. Se rie s
T = 1 50 ° C

J

Fig. 12 - Current Ratings Characteristics

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Fig. 15 - Forward Power Loss Characteristics

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0 255075100125150

0

.

0

6

K

/

W

0

.

1

K

/

W

0

.

1

6

K

/

W

0

.

2

5

K

/

W

0

.

4

K

/

W

0

.

6

K

/

W

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

0

2

K

/

W

­D

e

l

t

a

R

0

.

0

4

K

/

W

t

h

S

A

0

300

600

900

1200

1500

1800

2100

2400

0200400600800

120°

(Rect )

Maximum Tota l Po wer Loss (W)

Total Output Current (A)

3 x VSK.270.. Serie s

Three Phase Bridge

Connected

T = 150° C

J

VSK.250, VSK.270, VSK.320 Series

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

700

600

500

180°

400

(Sine)

300

200

VSK.270. . Se rie s

100

Maximum Total Forward Power Lo ss (W)

0

0 50 100 150 200 250 300 350 400

Pe r Ju n c ti o n

T = 15 0° C

To t a l RM S O u t p u t C u r r e n t ( A )

Fig. 16 - Forward Power Loss Characteristics

1800

1600

1400

1200

1000

800

180°

(Sine)

180°

(Rec t)

600

400

Maximum Total Power Loss (W)

200

0

0 100 200 300 400 500 600

2 x VSK.270. . Se rie s

Sin gle Pha se Bridge

Connected

T = 1 50 ° C

J

Total Output Curre nt (A)

Fig. 17 - Forward Power Loss Characteristics

DC

J

0 25 50 75 100 12 5 150

Maximum Allowable Ambient Temperature (°C)

0 255075100125150

Maximum Allowable Ambient Temperature (°C)

R

0

t

.

h

0

S

6

A

K

=

/

W

0

.

1

K

/

0

.

1

6

K

0

.

2

5

K

0

.

3

K

0

.

4

K

0

.

6

K

0

.

0

6

0

.

0

8

K

0

.

1

2

K

0

.

1

6

0

.

2

5

0

.

4

K

0

.

6

K

0

.

0

2

W

/

W

/

W

/

W

/

W

/

W

0

.

0

4

K

/

W

/

W

/

W

K

/

W

K

/

W

/

W

/

W

K

/

W

R

0

.

t

3

h

K

S

A

/

K

W

/

W

Vishay Semiconductors

­D

e

l

t

a

R

=

0

.

0

2

K

/

W

­D

e

l

t

a

R

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Revision: 02-Jul-10 [e-mail]

Fig. 18 - Forward Power Loss Characteristics

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VSK.250, VSK.270, VSK.320 Series

2000

3000

4000

5000

6000

7000

8000

110100

Pea k Ha lf Sine Wave Forward Current (A)

Number Of Equal Amplitude Half Cyc le Current Pulses (N)

Initial T = 150°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

At Any Ra ted Load Condition And With

Rated V Applied Following Surge.

RRM

J

VSK.270.. Serie s
Pe r Ju nc t io n

10

100

1000

10000

0.511.522.533.54

T = 25 °C

J

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

T = 150° C

J

VSK.270 .. Ser ie s
Pe r Ju nc t io n

0.001

0.01

0.1

1

0.001 0.01 0.1 1 10 100

Sq ua re Wa ve Pulse Dura tio n (s)

thJC

Steady State Value:

R = 0.45 K/W

(DC Operation)

thJC

VSK.270. . Se rie s
Pe r Ju nc t io n

Tra nsien t Therma l Impe danc e Z (K/ W)

Vishay Semiconductors

Fig. 19 - Maximum Non-Repetitive Surge Current

9000

Ma ximum No n Repet itiv e Surge Current

8000

7000

6000

Versus Pulse Train Duration.

Init ia l T = 150°C

No Volta g e Rea pp lied

Ra t ed V Re a p p l i e d

RRM

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

Fig. 22 - Thermal Impedance Z

150

J

140

130

120

Characteristics

thJC

VSK.320.. Ser ie s
R ( D C ) = 0. 12 5 K / W

thJC

Conduction Angle

5000

4000

3000

VSK.270.. Se rie s

Pe a k Ha lf Sine Wave Forward Current (A)

Pe r Ju nc t io n

2000

0.01 0.1 1

Pu l se Tra in D u ra t io n ( s)

Fig. 20 - Maximum Non-Repetitive Surge Current

Fig. 21 - Forward Voltage Drop Characteristics

110

30°

100

90

80

Maximum Allowable Case Temperat ure (°C)

0 50 100 150 200 250 300 350

Average Forward Current (A)

60°

90°

120°

Fig. 23 - Current Ratings Characteristics

150

140

130

120

110

100

90

80

Maximum Allowable Case Tem perature (°C)

0 100 200 300 400 500 600

Av er a g e Fo rwa rd C urren t (A)

VSK.320.. Series
R ( DC ) = 0 .1 25 K/ W

thJC

30°

60°

90°

120°

Cond uc tion Period

180°

DC

Fig. 24 - Current Ratings Characteristics

180°

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0

50

100

150

200

250

300

350

400

0 5 0 100 1 50 2 00 250 3 00 350

Average Forward Current (A)

RM S Li m it

Maximum Average Forward Power Loss (W)

Conduction Angle

180°
120°

90°
60°
30°

VSK.320.. Se ries
T = 150°C

J

0 2 5 50 75 1 00 125 150

0

.

1

K

/

W

0

.

2

K

/

W

0

.

6

K

/

W

0

.

0

6

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

0

2

K

/

W

­D

e

l

t

a

R

0

.

1

6

K

/

W

0

.

0

4

K

/

W

t

h

S

A

0

100

200

300

400

500

600

700

0 100 200 300 400 500

DC

180°

(Sine)

Total RMS Output Current (A)

VSK.320.. Serie s

Pe r Ju n c ti on

T = 150°C

Maximum To tal Forward Power Loss (W)

J

VSK.250, VSK.270, VSK.320 Series

Standard Recovery Diodes, 250 A to 320 A

Vishay Semiconductors

(MAGN-A-PAK Power Modules)

500

DC

450

180°
120°

400

90°
60°

350

30°

300

250

RMS Lim it

200

150

100

50

0

Maximum Average Forward Powe r Loss (W)

0 1 00 200 300 400 500 600

Average Forward Current (A)

Fig. 25 - Forward Power Loss Characteristics Fig. 26 - Forward Power Loss Characteristics

Cond uct ion Period

VSK.320 .. Serie s
Pe r Ju nc t io n
T = 150°C

J

Document Number: 93581 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

Fig. 27 - Forward Power Loss Characteristics

1400

0

1200

180°

1000

800

(Sine)

180°

(Re ct)

600

400

200

M a xi mu m To t a l P ow e r Lo ss ( W)

0

0 100 200 300 400 500 600

Total Output Current (A)

2 x VSK.320.. Se ries

Si n g l e Ph a se Br i d g e

Connec ted

T = 150° C

J

Fig. 28 - Forward Power Loss Characteristics

, [e-mail], [e-mail] 9

.

0

8

K

/

0

.

1

2

K

/

0

.

1

6

K

/

0

.

2

5

K

/

0

.

5

K

/

W

0

.

6

K

/

W

0255075100125150

Maximum Allowable Ambient Temperature (°C)

0

0

0

.

0

6

K

/

W

W

W

W

W

R

.

.

0

0

t

3

4

h

S

K

K

A

/

/

W

=

W

0

.

0

2

K

/

W

­D

e

l

t

a

R

VSK.250, VSK.270, VSK.320 Series

2000

3000

4000

5000

6000

7000

8000

9000

10000

0.01 0.1 1

Peak Half Sine Wave Forward Current (A)

Pulse Train Duration (s)

Maximum Non Rep etitive Surge Current

Ini t ia l T = 150°C
No Voltage Reapplied
Ra t ed V Re a p p l ie d

Versus Pulse Train Duration.

RRM

J

VSK.320.. Series
Pe r Ju nc t io n

0.001

0.01

0.1

1

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

thJC

Transient T

he rmal Imp ed a nc e Z (K/W)

VSK.320.. Se ries
Pe r Ju nc t io n

St e a d y St a t e V a l u e :

R = 0. 45 K/ W

(DC Operation)

thJC

Vishay Semiconductors

2800

2400

2000

1600

1200

800

400

M a xi m u m To t a l Po w e r L o ss ( W)

0

0 200 4 00 600 800 1000

10000

At Any Ra ted Lo ad Condition And With

Rat ed V App lied Following Surge .

9000

8000

7000

6000

5000

4000

3000

Peak Half Sine Wave Forward Current (A)

2000

110100

Number Of Equa l Amplitude Half Cycle Current Pulses (N)

Fig. 30 - Maximum Non-Repetitive Surge Current

RRM

VSK.320 .. Se ries
Pe r J u nc t io n

Initial T = 150°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

R

0.

t

h

0

3

S

A

K

=

/W

0

0

.

0

4

K

0

.

0

5

120°

(Re ct)

3 x VSK.320.. Serie s
Three Phase Bridge

Connec t ed

T = 15 0° C

J

K

0

.

0

6

K

0

.

0

8

K

0

.

1

2

0

.

2

K

0

.

3

K

0

.

6

K

0 25 50 75 100 125 150

Total Output Current (A)

Maximum Allowable Ambient Temperature (°C)

Fig. 29 - Forward Power Loss Characteristics

J

.

0

2

K

/

W

/

W

/

W

/

W

K

/

W

/

W

/

W

/

W

/

W

­D

e

l

t

a

R

10000

T = 2 5 ° C

J

1000

Inst anta neous Forward Curre nt (A)

100

0.5 1 1.5 2 2.5 3 3.5 4

In st a n t a n eo u s Fo rw a rd Vo l t a g e ( V )

Fig. 32 - Forward Voltage Drop Characteristics

T = 1 5 0 ° C

J

VSK.320.. Se ries
Pe r Ju nc t io n

Fig. 31 - Maximum Non-Repetitive Surge Current

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93581
10 [e-mail]

Fig. 33 - Thermal Impedance Z

Characteristics

thJC

, [e-mail], [e-mail] Revision: 02-Jul-10

VSKC...

+

--

+

-

-

VSKJ...

-++

-

+

+

VSKE...

+-

+-

VSK.250, VSK.270, VSK.320 Series

Standard Recovery Diodes, 250 A to 320 A

(MAGN-A-PAK Power Modules)

ORDERING INFORMATION TABLE

Device code

CIRCUIT CONFIGURATION

CIRCUIT DESCRIPTION

Vishay Semiconductors

VSK D 320 - 24

1324

1 - Module type

2 - Circuit configuration (see Circuit Configuration table)

3

- Current rating: I

4 - Voltage code x 100 = V

CIRCUIT

CONFIGURATION CODE

F(AV)

rounded

(see Voltage Ratings table)

RRM

CIRCUIT DRAWING

~

VSKD...

+

-

Two diodes doubler circuit D

Two diodes common cathodes C

Two diodes common anodes J

Single diode E

-

~

+

Dimensions www.vishay.com/doc?95086

Document Number: 93581 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

LINKS TO RELATED DOCUMENTS

, [e-mail], [e-mail] 11

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

MAGN-A-PAK

3 screws M8 x 1.25

20 (0.79)

32

(1.26)

HEX 13

9 (0.35)

35 (1.38) 28 (1.12)

80 (3.15)

115 (4.53)

Ø 5.5

6

38 (1.5)

6 (0.24)

51 (2.01)

(0.24)

50 (1.97)

52 (2.04)

10 (0.39)

Notes

• Dimensions are nominal

• Full engineering drawings are available on request

• UL identification number for gate and cathode wire: UL 1385

• UL identification number for package: UL 94 V-0

Document Number: 95086 For technical questions, contact: [e-mail]
Revision: 03-Aug-07 1

92 (3.62)

www.vishay.com

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1