Vishay VSK.170PbF Series, VSK.250PbF Series Data Sheet

(MAGN-A-PAK Power Modules), 170 A/250 A

MAGN-A-PAK

PRODUCT SUMMARY

I

T(AV)

VSK.170PbF, VSK.250PbF Series

SCR/SCR and SCR/Diode

FEATURES

• High voltage

• Electrically isolated base plate

170 A/250 A

• 3500 V

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.

isolating voltage

RMS

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.170.. VSK.250.. UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

2

I

t 1310 3610 kA2s

V

DRM/VRRM

T

J

85 °C 170 250

377 555

50 Hz 5100 8500

60 Hz 5350 8900

50 Hz 131 361

60 Hz 119 330

Up to 1600 Up to 2000 V

Range - 40 to 130 °C

kA2s

A

Document Number: 94417 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

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VSK.170PbF, VSK.250PbF Series

Vishay Semiconductors

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

VSK.170-

VSK.250-

VOLTAGE

CODE

04 400 500

08 800 900

10 1000 1100

12 1200 1300

14 1400 1500

16 1600 1700

04 400 500

08 800 900

10 1000 1100

12 1200 1300

14 1400 1500

16 1600 1700

18 1800 1900

20 2000 2100

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 170 A/250 A

RRM/VDRM

, MAXIMUM REPETITIVE

PEAK REVERSE AND OFF-STATE

BLOCKING VOLTAGE

V

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

I

RRM/IDRM

AT 130 °C

MAXIMUM

mA

50

50

60

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle on-state
non-repetitive, surge current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 kA2s

Low level value or threshold voltage V

High level value of threshold voltage V

Low level value on-state slope resistance r

High level value on-state slope resistance r

Maximum on-state voltage drop V

Maximum holding current I

Maximum latching current I

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

t1

(I >  x I

t2

TM

H

L

180° conduction, half sine wave

As AC switch 377 555

t = 10 ms

t = 8.3 ms 5350 8900

t = 10 ms

t = 8.3 ms 4500 7500

t = 10 ms

t = 8.3 ms 119 330

t = 10 ms

t = 8.3 ms 84.4 233

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I

T(AV)

(16.7 % x  x I
T

= TJ maximum

J

T(AV)

ITM =  x I

T(AV)

average power = V

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V

RRM

RRM

Sinusoidal
half wave,
initial T

=

J

maximum

T

J

reapplied

< I <  x I

T(AV)

< I <  x I

< I <  x I

T(AV)

< I <  x I

T(AV)

T(AV)

),

T(AV)

), TJ = TJ maximum 1.12 1.00

),

T(AV)

), TJ = TJ maximum 0.96 0.57

, TJ = TJ maximum, 180° conduction,

T(TO)

x I

T(AV)

+ rf x (I

T(RMS)

2

)

Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500
Anode supply = 12 V, resistive load = 1 ,

gate pulse: 10 V, 100 μs, T

= 25 °C

J

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170 250 A

85 85 °C

5100 8500

4300 7150

131 361

92.5 255

kA2s

0.89 0.97

1.34 0.60

1.60 1.44 V

1000 1000

A

V

m

mA

VSK.170PbF, VSK.250PbF Series

SCR/SCR and SCR/Diode

Vishay Semiconductors

(MAGN-A-PAK Power Modules), 170 A/250 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS

Typical delay time t

Typical rise time t

Typical turn-off time t

TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs

d

= 0.67 % V

V

r

q

d

I

= 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;

TM

V

= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 

R

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS

Maximum peak reverse and
off-state leakage current

RMS insulation voltage V

Critical rate of rise of off-state voltage dV/dt T

I

RRM,

I

DRM

TJ = TJ maximum 50 60 mA

50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V

INS

= TJ maximum, exponential to 67 % rated V

J

DRM

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS

Maximum peak gate power P

Maximum average gate power P

GM

G(AV)

Maximum peak gate current + I

Maximum peak negative gate voltage - V

Maximum required DC gate voltage to trigger V

Maximum required DC gate current to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that willnot trigger I

GT

GT

GD

GD

Maximum rate of rise of turned-on current dI/dt

tp  5 ms, TJ = TJ maximum 10.0

f = 50 Hz, TJ = TJ maximum 2.0

tp  5 ms, TJ = TJ maximum 3.0 A

GM

tp  5 ms, TJ = TJ maximum 5.0

GT

TJ = - 40 °C

T

= 25 °C 3.0

J

= TJ maximum 2.0

T

J

Anode supply = 12 V,
resistive load; Ra = 1 

TJ = - 40 °C

= 25 °C 200

J

= TJ maximum 100

T

J

TJ = TJ maximum, rated V

TJ = TJ maximum, rated V

= TJ maximum, ITM = 400 A,

T

J

rated V

DRM

applied

Anode supply = 12 V,
resistive load; Ra = 1 

applied 0.25 V

DRM

applied 10.0 mA

DRM

1.0

2.0

50 to 150

1000 V/μs

4.0

350

mAT

500 A/μs

μs

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS

Junction operating and storage
temperature range

Maximum thermal resistance,
junction to case per junction

Typical thermal resistance,
case to heatsink per module

MAP to heatsink

Mounting torque ± 10 %

busbar to MAP

Approximate weight

Case style MAGN-A-PAK

Document Number: 94417 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

, T

T

J

Stg

DC operation 0.17 0.125

Mounting surface flat, smooth and greased 0.02 0.02

R

R

thJC

thCS

- 40 to 130 °C

A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the

4 to 6 Nm

spread of the compound.

500 g

17.8 oz.

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K/W

VSK.170PbF, VSK.250PbF Series

60

70

80

90

100

110

120

130

0 40 80 120 160 200

30°

60°

90°

120°

180°

Average On-st ate Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Ang le

VSK.170.. Series
R

thJC

(DC) = 0.17 K/W

60

70

80

90

100

110

120

130

0 50 100 150 200 250 3

00

DC

30°

60°

90°

120°

180°

Average On-state Curr ent (A)

Maximum Allowable Case Temperature (°C)

Conduction Period

VSK.170.. Series
R (DC) = 0.17 K/W

thJC

0

50

100

150

200

250

300

350

0 50 100 150 200 250 3

00

DC
180°
120°

90°
60°
30°

RMS Limit

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

VSK.170.. Series
Per Junction
T

J

= 125°C

Vishay Semiconductors

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 170 A/250 A

R CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION AT T

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033

VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033

Note

• Table shows the increment of thermal resistance R

Fig. 1 - Current Ratings Characteristics

MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM

J

when devices operate at different conduction angles than DC

thJC

)

300

250

200

150

100

50

0

Maximum Average On-state Power Loss (W

040801201602

180°
120°

90°
60°
30°

RMS Limit

VSK.170.. Series
Per Junction
T

J

Average On-state Current (A)

Conduction Angle

= 125°C

Fig. 3 - On-State Power Loss Characteristics

UNITS

K/W

00

Fig. 2 - Current Ratings Characteristics

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Fig. 4 - On-State Power Loss Characteristics

, [e-mail], [e-mail] Revision: 02-Jul-10