Vishay VSK.230..PbF Series Data Sheet

(MAGN-A-PAK Power Modules), 230 A

MAGN-A-PAK

PRODUCT SUMMARY

I

T(AV)

SCR/SCR and SCR/Diode

FEATURES

• High voltage

• Electrically isolated base plate
isolating voltage

RMS

230 A

• 3500 V

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.

VSK.230..PbF Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

√t 280 kA2√s

V

DRM/VRRM

T

J

85 °C 230

510

50 Hz 7500

60 Hz 7850

50 Hz 280

60 Hz 260

Up to 2000 V

Range - 40 to 130 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VSK.230-

V

RRM/VDRM

VOLTAGE

CODE

08 800 900

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

PEAK REVERSE AND OFF-STATE

, MAXIMUM REPETITIVE

BLOCKING VOLTAGE

V

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

A

kA2s

I

RRM/IDRM

AT 130 °C

MAXIMUM

mA

50

Document Number: 93053 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 [e-mail]

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VSK.230..PbF Series

Vishay Semiconductors

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 230 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle on-state
non-repetitive, surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 2800 kA2√s

Low level value or threshold voltage V

High level value of threshold voltage V

Low level value on-state slope resistance r

High level value on-state slope
resistance

Maximum on-state voltage drop V

Maximum holding current I

Maximum latching current I

I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

(I > π x I

r

t2

TM

H

L

180° conduction, half sine wave

As AC switch 510

t = 10 ms

t = 8.3 ms 7850

t = 10 ms

t = 8.3 ms 6600

t = 10 ms

t = 8.3 ms 256

t = 10 ms

t = 8.3 ms 181

(16.7 % x π x I
T

= TJ maximum

J

(I > π x I

T(AV)

(16.7 % x π x I
T

= TJ maximum

J

T(AV)

ITM = π x I

T(AV)

average power = V

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V

RRM

RRM

Sinusoidal
half wave,
initial T

=

J

maximum

T

J

reapplied

< I < π x I

T(AV)

< I < π x I

< I < π x I

T(AV)

< I < π x I

T(AV)

T(AV)

),

T(AV)

), TJ = TJ maximum 1.07

),

T(AV)

), TJ = TJ maximum 0.73

, TJ = TJ maximum, 180° conduction,

T(TO)

x I

T(AV)

+ rf x (I

T(RMS)

2

)

Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500
Anode supply = 12 V, resistive load = 1 Ω,

gate pulse: 10 V, 100 μs, T

= 25 °C

J

230 A

85 °C

7500

6300

280

198

1.03

0.77

1.59 V

1000

kA

mΩ

mA

A

2

s

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical delay time t

Typical rise time t

Typical turn-off time t

d

TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
V

= 0.67 % V

r

q

d

I

= 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;

TM

V

= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω

R

DRM

1.0

2.0

50 to 150

μs

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and
off-state leakage current

RMS insulation voltage V

Critical rate of rise of off-state voltage dV/dt T

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I

RRM,

I

DRM

TJ = TJ maximum 50 mA

50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V

INS

= TJ maximum, exponential to 67 % rated V

J

DRM

1000 V/μs

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VSK.230..PbF Series

SCR/SCR and SCR/Diode

Vishay Semiconductors

(MAGN-A-PAK Power Modules), 230 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current + I

GM

G(AV)

GM

Maximum peak negative gate voltage - V

Maximum required DC gate voltage to trigger V

Maximum required DC gate current to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that willnot trigger I

GT

GT

GD

GD

Maximum rate of rise of turned-on current dI/dt

tp ≤ 5 ms, TJ = TJ maximum 10.0

f = 50 Hz, TJ = TJ maximum 2.0

tp ≤ 5 ms, TJ = TJ maximum 3.0 A

tp ≤ 5 ms, TJ = TJ maximum 5.0

GT

TJ = - 40 °C

T

= 25 °C 3.0

J

= TJ maximum 2.0

T

J

Anode supply = 12 V,
resistive load; Ra = 1 Ω

TJ = - 40 °C

= 25 °C 200

J

T

= TJ maximum 100

J

TJ = TJ maximum, rated V

TJ = TJ maximum, rated V

= TJ maximum, ITM = 400 A,

T

J

rated V

DRM

applied

Anode supply = 12 V,
resistive load; Ra = 1 Ω

applied 0.25 V

DRM

applied 10.0 mA

DRM

4.0

350

500 A/μs

W

V

mAT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating temperature range T

Storage temperature range T

Maximum thermal resistance,
junction to case per junction

Typical thermal resistance,
case to heatsink per module

R

R

MAP to heatsink

Mounting torque ± 10 %

busbar to MAP

Approximate weight

J

Stg

thJC

thCS

DC operation 0.125

Mounting surface flat, smooth and greased 0.02

A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 h to allow for the spread of
the compound.

- 40 to 130

- 40 to 150

4 to 6 Nm

500 g

17.8 oz.

°C

K/W

Case style MAGN-A-PAK

ΔR CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION AT T

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W

Note

• Table shows the increment of thermal resistance R

MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM

J

when devices operate at different conduction angles than DC

thJC

UNITS

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VSK.230..PbF Series

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 230 A

Fig. 4 - On-State Power Loss Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 3 - On-State Power Loss Characteristics

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Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

VSK.230..PbF Series

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 230 A

Fig. 7 - On-State Power Loss Characteristics

Vishay Semiconductors

Fig. 8 - On-State Power Loss Characteristics

Fig. 9 - On-State Power Loss Characteristics

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VSK.230..PbF Series

0.1

1

10

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

Tj=2 5 °C

Tj=12 5 °C

Tj=-40 °C

(2) (3)

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

a) Recommended load line for

b) Recommended load line for

rated di/dt : 20 V, 10 ohms; tr < =1µs

tr<=1 µs

Rectan gular gate pulse

<=30% rated di/dt : 10V, 20ohms

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

VSK.230 Series Frequency Limited by PG(AV)

(1) (4)

0.001

0.01

0.1

1

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

thJC

Steady State Value:
R = 0.125 K/W

(DC Operation)

thJC

Transient The rmal Impedance Z (K/W)

VSK.230.. Series

Vishay Semiconductors

Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Reverse Recovery Charge Characteristics

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 230 A

1800

VSK.230 .. Series

= 130 °C

T

1600

J

Per Junction

1400

1200

1000

800

600

400

200

Typical Reverse Recovery Charge - Qrr (µC)

0 102030405060708090100

Rate Of Fall Of On-state Current - di/dt (A/µs)

ITM = 800 A

500 A

300 A

200 A

100 A

50 A

Fig. 12 - Gate Characteristics

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Fig. 13 - Thermal Impedance Z

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Characteristics

thJC

2

VSK.230..PbF Series

SCR/SCR and SCR/Diode

(MAGN-A-PAK Power Modules), 230 A

ORDERING INFORMATION TABLE

Device code

Note

• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION

VSKT...

VSK T 230 - 20 PbF

- Module type

1

2 - Circuit configuration (see dimensions - link at the end of datasheet)

3 - Current rating

4 - Voltage code x 100 = V

-

5

None = Standard production

PbF = Lead (Pb)-free

VSKH...

VSKL...

Vishay Semiconductors

51324

(see Voltage Ratings table)

RRM

VSKK...

~

~

+

+

-

-

+

+

-

-

-

-

G2

K

VSKV...

~

+

-

-

+

+

~

+

-

K1G1 G2K2

-

+

+

G1

G2

K1

~

+

-

Available 800 V;
contact factory for different requirements.

K2

~

+

-

K1G1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95086

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including but not limited to the warranty expressed therein.

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