Vishay VSK.230..PbF Series Data Sheet
(MAGN-A-PAK Power Modules), 230 A
MAGN-A-PAK
PRODUCT SUMMARY
I
T(AV)
SCR/SCR and SCR/Diode
FEATURES
• High voltage
• Electrically isolated base plate
isolating voltage
RMS
230 A
• 3500 V
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
VSK.230..PbF Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
2
I
√t 280 kA2√s
V
DRM/VRRM
T
J
85 °C 230
510
50 Hz 7500
60 Hz 7850
50 Hz 280
60 Hz 260
Up to 2000 V
Range - 40 to 130 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VSK.230-
V
RRM/VDRM
VOLTAGE
CODE
08 800 900
12 1200 1300
16 1600 1700
18 1800 1900
20 2000 2100
PEAK REVERSE AND OFF-STATE
, MAXIMUM REPETITIVE
BLOCKING VOLTAGE
V
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
A
kA2s
I
RRM/IDRM
AT 130 °C
MAXIMUM
mA
50
Document Number: 93053 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VSK.230..PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 230 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle on-state
non-repetitive, surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 2800 kA2√s
Low level value or threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance r
High level value on-state slope
resistance
Maximum on-state voltage drop V
Maximum holding current I
Maximum latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
(I > π x I
r
t2
TM
H
L
180° conduction, half sine wave
As AC switch 510
t = 10 ms
t = 8.3 ms 7850
t = 10 ms
t = 8.3 ms 6600
t = 10 ms
t = 8.3 ms 256
t = 10 ms
t = 8.3 ms 181
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
T(AV)
(16.7 % x π x I
T
= TJ maximum
J
T(AV)
ITM = π x I
T(AV)
average power = V
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
RRM
RRM
Sinusoidal
half wave,
initial T
=
J
maximum
T
J
reapplied
< I < π x I
T(AV)
< I < π x I
< I < π x I
T(AV)
< I < π x I
T(AV)
T(AV)
),
T(AV)
), TJ = TJ maximum 1.07
),
T(AV)
), TJ = TJ maximum 0.73
, TJ = TJ maximum, 180° conduction,
T(TO)
x I
T(AV)
+ rf x (I
T(RMS)
2
)
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 μs, T
= 25 °C
J
230 A
85 °C
7500
6300
280
198
1.03
0.77
1.59 V
1000
kA
mΩ
mA
A
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time t
Typical rise time t
Typical turn-off time t
d
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
V
= 0.67 % V
r
q
d
I
= 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;
TM
V
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω
R
DRM
1.0
2.0
50 to 150
μs
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
RMS insulation voltage V
Critical rate of rise of off-state voltage dV/dt T
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93053
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I
RRM,
I
DRM
TJ = TJ maximum 50 mA
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V
INS
= TJ maximum, exponential to 67 % rated V
J
DRM
1000 V/μs
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 02-Jul-10
VSK.230..PbF Series
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 230 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak gate current + I
GM
G(AV)
GM
Maximum peak negative gate voltage - V
Maximum required DC gate voltage to trigger V
Maximum required DC gate current to trigger I
Maximum gate voltage that will not trigger V
Maximum gate current that willnot trigger I
GT
GT
GD
GD
Maximum rate of rise of turned-on current dI/dt
tp ≤ 5 ms, TJ = TJ maximum 10.0
f = 50 Hz, TJ = TJ maximum 2.0
tp ≤ 5 ms, TJ = TJ maximum 3.0 A
tp ≤ 5 ms, TJ = TJ maximum 5.0
GT
TJ = - 40 °C
T
= 25 °C 3.0
J
= TJ maximum 2.0
T
J
Anode supply = 12 V,
resistive load; Ra = 1 Ω
TJ = - 40 °C
= 25 °C 200
J
T
= TJ maximum 100
J
TJ = TJ maximum, rated V
TJ = TJ maximum, rated V
= TJ maximum, ITM = 400 A,
T
J
rated V
DRM
applied
Anode supply = 12 V,
resistive load; Ra = 1 Ω
applied 0.25 V
DRM
applied 10.0 mA
DRM
4.0
350
500 A/μs
W
V
mAT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating temperature range T
Storage temperature range T
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
R
R
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
Approximate weight
J
Stg
thJC
thCS
DC operation 0.125
Mounting surface flat, smooth and greased 0.02
A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 h to allow for the spread of
the compound.
- 40 to 130
- 40 to 150
4 to 6 Nm
500 g
17.8 oz.
°C
K/W
Case style MAGN-A-PAK
ΔR CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.230- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W
Note
• Table shows the increment of thermal resistance R
MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
J
when devices operate at different conduction angles than DC
thJC
UNITS
Document Number: 93053 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 02-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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