Vishay VSK.136..PbF Series, VSK.142..PbF Series, VSK.162..PbF Series Data Sheet

Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A

New INT-A-PAK

PRODUCT SUMMARY

I

T(AV)

(New INT-A-PAK

TM

135 to 160 A

VSK.136, .142, .162..PbF Series

Vishay High Power Products

TM

Power Modules)

FEATURES

• High voltage

• Electrically isolated by DBC ceramic (AI

• 3500 V

isolating voltage

RMS

• Industrial standard package

• High surge capability

• Glass passivated chips

• Modules uses high voltage power thyristor/diodes in three
basic configurations

• Simple mounting

• UL E78996 approved

• Totally lead (Pb)-free

• Designed and qualified for multiple level

APPLICATIONS

• DC motor control and drives

• Battery charges

•Welders

• Power converters

• Lighting control

• Heat and temperature control

2O3

)

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.136.. VSK.142.. VSK.162.. UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

2

√t 515.5 1013 1190 kA2√s

I

V

RRM

T

J

T

C

50 Hz 3200 4500 4870

60 Hz 3360 4712 5100

50 Hz 51.5 102 119

60 Hz 47 92.5 108

Range - 40 to 125 °C

135 140 160 A

85 85 85 °C

300 310 355

400 to 1600 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

VSK.136
VSK.142
VSK.162

V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

RRM/VDRM

, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

V

V

RSM/VDSM

, MAXIMUM NON-REPETITIVE

PEAK REVERSE VOLTAGE

V

I

RRM/IDRM

AT 125 °C

A

kA2s

mA

50

Document Number: 94513 For technical questions, contact: [e-mail]
Revision: 25-Apr-08 1

www.vishay.com

VSK.136, .142, .162..PbF Series

Vishay High Power Products

Thyristor/Diode and

Thyristor/Thyristor, 135 A to 160 A

(New INT-A-PAKTM Power Modules)

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
on-state, non-repetitive
surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 515.5 1013 1190 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value on-state
slope resistance

High level value on-state
slope resistance

Maximum forward voltage drop V

Maximum holding current I

Maximum latching current I

T(AV)

I

TSM

T(TO)1

T(TO)2

r

r

180° conduction, half sine wave

As AC switch 300 310 355

t = 10 ms

t = 8.3 ms 3360 4712 5100

t = 10 ms

t = 8.3 ms 2800 3963 4300

t = 10 ms

t = 8.3 ms 47 92.5 108

t = 10 ms

t = 8.3 ms 33.3 65.4 76.7

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

t1

(I > π x I

t2

ITM = π x I

TM

Anode supply = 6 V initial IT = 30 A, TJ = 25 °C 200

H

Anode supply = 6 V resistive load = 1 Ω

L

Gate pulse: 10 V, 100 µs, T

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ maximum 1.05 1 0.98

T(AV)

< I < π x I

T(AV)

), TJ maximum 1.65 1.43 1.38

T(AV)

, TJ = 25 °C, 180° conduction 1.57 1.55 1.54 V

T(AV)

VALUES

VSK.136 VSK.142 VSK.162

135 140 160 A

85 85 85 °C

3200 4500 4870

2700 3785 4100
Sine half wave,
initial T

=

maximum

T

J

J

51.5 102 119

36.5 71.6 84

), TJ maximum 0.86 0.83 0.8

T(AV)

), TJ maximum 2.02 1.78 1.67

T(AV)

= 25 °C

J

400

UNITS

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical delay time t

Typical rise time t

Typical turn-off time t

gd

gr

TJ = 25 °C

ITM = 300 A, - dl/dt = 15 A/µs; TJ = TJ maximum

q

= 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω

V

R

Gate current = 1 A, dl
V

= 0.67 % V

d

DRM

/dt = 1 A/µs

g

1

2

50 to 200

µs

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and
off-state leakage current

RMS insulation voltage V

Critical rate of rise of
off-state voltage

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 25-Apr-08

I

RRM

I

DRM

INS

dV/dt

,

TJ = 125 °C 50 mA

50 Hz, circuit to base,
all terminals shorted, t = 1 s

T

= TJ maximum,

J

exponential to 67 % rated V

DRM

3500 V

1000 V/µs

Document Number: 94513

VSK.136, .142, .162..PbF Series

Thyristor/Diode and

Vishay High Power Products

Thyristor/Thyristor, 135 A to 160 A

(New INT-A-PAKTM Power Modules)

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative
gate voltage

Maximum required DC
gate voltage to trigger

Maximum required DC
gate current to trigger

Maximum gate voltage
that will not trigger

Maximum gate current
that will not trigger

Maximum rate of rise of
turned-on current

G(AV)

GM

- V

V

I

GT

V

I

GD

dI/dt T

tp ≤ 5 ms, TJ = TJ maximum 12

GM

f = 50 Hz, TJ = TJ maximum 3

tp ≤ 5 ms, TJ = TJ maximum

GT

TJ = - 40 °C

T

GT

GD

= 25 °C 2.5

J

T

= TJ maximum 1.7

J

TJ = - 40 °C 270

= 25 °C 150

J

T

= TJ maximum 80

J

TJ = TJ maximum, rated V

= TJ maximum, ITM = 400 A rated V

J

Anode supply = 6 V,
resistive load; R

applied

DRM

= 1 Ω

a

applied 300 A/µs

DRM

W

3A

10

4

V

mAT

0.3 V

10 mA

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage
temperature range

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink per module

Mounting
torque ± 10 %

IAP to heatsink

busbar to IAP

Approximate weight

T

J

T

Stg

R

thJC

R

thCS

DC operation 0.18 0.16

Mounting surface, smooth, flat and greased 0.05

A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.

- 40 to 125

- 40 to 150

4 to 6 Nm

200 g

7.1 oz.

Case style New INT-A-PAK

ΔR CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION

MAXIMUM

AT T

DEVICES

J

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSK.136 0.007 0.01 0.013 0.0155 0.017 0.009 0.012 0.014 0.015 0.017

VSK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040

Note

• Table shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

UNITS

°C

K/W

K/WVSK.142 0.0019 0.0019 0.0020 0.0020 0.0021 0.0018 0.0022 0.0023 0.0023 0.0020

Document Number: 94513 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 25-Apr-08 3

VSK.136, .142, .162..PbF Series

Vishay High Power Products

130

120

110

100

90

80

70

Maximum Allowable Case Temperature (°C)

0 20 40 60 80 100 120 140

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

70

0 50 100 150 200 250

Fig. 2 - Current Ratings Characteristics

VSK.136.. Series
R

(DC) = 0.18 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average Forward Current (A)

VSK.136.. Series
R

(DC) = 0.18 K/W

thJC

Conduction Period

30°

60°

90°

120°

180°

Average On-state Current (A)

Thyristor/Diode and

Thyristor/Thyristor, 135 A to 160 A

(New INT-A-PAKTM Power Modules)

350

DC

300

180
120

250

90
60
30

200

150

100

180°

DC

50

0

Maximum Average On-state Power Loss (W)

0 50 100 150 200 250

Fig. 4 - On-State Power Loss Characteristics

3000

At Any Rated Load Condition And With

2800

2600

2400

2200

2000

1800

1600

1400

Peak Half Sine Wave On-state Current (A)

1200

Ra ted V A p plie d F ollo wing Sur ge.

VSK.136.. Series
Per Junction

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Conduction Period

VSK.136.. Series
Per Junction
T = 1 2 5°C

J

Average On-state Current (A)

RRM

In itia l T = 1 25°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

RMS Lim it

J

001011

300

250

200

150

100

50

Maximum Average On-state Power Loss (W)

0

180
120
90
60
30

RMS Limit

Conduction Angle

VSK.136.. Series
Per Junction
TJ = 125°C

0 30 60 90 120 150

Average On-state Current (A)

Fig. 3 - On-State Power Loss Characteristics

3500

3000

2500

2000

1500

Peak Half Sine Wave On -state Current (A)

1000

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

VSK.1 3 6.. Se ries
Per Junction

Pulse Train Duration (s)

In it ial T = 125°C

No Voltage Reapplied
Ra te d V R eap plied

RRM

J

Fig. 6 - Maximum Non-Repetitive Surge Current

11.010.0

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Document Number: 94513

4 Revision: 25-Apr-08