VISHAY
16797
1
2
3
4
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP362.. - series are miniaturized SMD-IR
Receiver Modules for infrared remote control systems. PIN diode and preamplifier are assembled on
lead frame, the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP362.. is the standard IR remote control SMD-Receiver series, for 3 V
supply voltage supporting all major transmission
codes.
TSOP362..
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Continuous data transmission possible
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
• Supply voltage: 2.7 V to 5.5 V
Special Features
• Improved immunity against ambient light
• Suitable burst length (≥ 6 cycles/burst)
• Taping available for topview and sideview
assembly
Mechanical Data
Pinning:
1 = GND, 2 = GND, 3 = V
, 4 = OUT
S
Parts Table
Part Carrier Frequency
TSOP36230 30 kHz
TSOP36233 33 kHz
TSOP36236 36 kHz
TSOP36237 36.7 kHz
TSOP36238 38 kHz
TSOP36240 40 kHz
TSOP36256 56 kHz
Document Number 82187
Rev. 3, 14-Aug-03
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1
TSOP362..
Vishay Semiconductors
Block Diagram
16839
3
V
30 kΩ
S
4
AGCInput
Band
Pass
Demodulator
OUT
1;2
PIN
Control
Circuit
GND
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Supply Voltage Pin 3 V
Supply Current Pin 3 I
Output Voltage Pin 4 V
Output Current Pin 4 I
Junction Temperature T
Storage Temperature Range T
Operating Temperature Range T
Power Consumption T
≤ 85 °C P
amb
Application Circuit
17403
Transmitter
with
TSALxxxx
R1+C1recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
HSxxxx
Circuit
=
2.0 V by the external circuit.
O
S
O
stg
amb
tot
R1=100Ω
V
S
C1=
4.7 µF
OUT
GND
- 0.3 to + 6.0 V
S
O
j
- 0.3 to
(V
S
- 40 to + 100 °C
- 25 to + 85 °C
VISHAY
+V
S
µC
V
O
GND
3 mA
+ 0.3)
10 mA
100 °C
30 mW
V
Electrical and Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p . Max Unit
Supply Current Ev = 0 I
Ev = 40 klx, sunlight I
Supply Voltage V
Transmission Distance Ev = 0, test signal see fig.1,
IR diode TSAL6200,
I
= 250 mA
F
Output Voltage Low
Irradiance (30-40 kHz) VS = 3 V
Irradiance (56 kHz) VS = 3 V
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2
I
= 0.5 mA, Ee = 0.7 mW/m2,
OSL
test signal see fig. 1
Pulse width tolerance:
t
- 5/fo < tpo < tpi + 6/fo,
pi
test signal see fig.1
Pulse width tolerance:
t
- 5/fo < tpo < tpi + 6/fo,
pi
test signal see fig.1
SD
SH
S
d 35 m
V
OSL
E
e min
E
e min
0.7 1.2 1.5 mA
1.3 mA
2.7 5.5 V
250 mV
0.35 0.5
0.4 0.6
Document Number 82187
Rev. 3, 14-Aug-03
mW/m
mW/m
2
2
VISHAY
Parameter Test condition Symbol Min Ty p. Max Unit
Irradiance (30-40 kHz) VS = 5 V
Pulse width tolerance:
- 5/fo < tpo < tpi + 6/fo,
t
pi
test signal see fig.1
Irradiance (56 kHz) VS = 5 V
Pulse width tolerance:
t
- 5/fo < tpo < tpi + 6/fo,
pi
test signal see fig.1
Irradiance tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 3
Directivity Angle of half transmission
distance
E
E
E
e min
e min
e max
ϕ
1/2
30
TSOP362..
Vishay Semiconductors
0.45 0.6
0.5 0.7
± 45 deg
mW/m
mW/m
W/m
2
2
2
Typical Characteristics (T
Optical Test Signal
E
e
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
amb
tpi *
T
* t
w 10/fo is recommended for optimal function
pi
Output Signal
V
O
V
OH
V
OL
1)
7/f0< td< 15/f
2)
tpi–5/f0< tpo < tpi+6/f
1)
t
d
0
0
2)
t
po
Figure 1. Output Function
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
po
0.1
t – Output Pulse Width ( ms )
0.0
0.1 1.0 10.0 100.0 1000.010000.0
16908
Output Pulse
Input Burst Duration
l = 950 nm,
optical test signal, fig.1
Ee – Irradiance ( mW/m2 )
= 25 °C unless otherwise specified)
Optical Test Signal
E
e
t
16110
t
600 ms 600 ms
Output Signal, ( see Fig.4 )
V
O
V
OH
V
OL
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
on off
T ,T – Output Pulse Width ( ms )
0.0
0.1 1.0 10.0 100.0 1000.010000.0
16909
T = 60 ms
T
on
T
off
Figure 3. Output Function
To n
To ff
l = 950 nm,
optical test signal, fig.3
Ee – Irradiance ( mW/m2 )
t
94 8134
t
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Document Number 82187
Rev. 3, 14-Aug-03
Figure 4. Output Pulse Diagram
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TSOP362..
Vishay Semiconductors
VISHAY
1.2
1.0
0.8
0.6
0.4
0.2
e min e
E / E – Rel. Responsivity
f = f0"5%
Df ( 3dB ) = f
/10
0
0.0
0.7 0.9 1.1 1.3
16925
f/f0 – Relative Frequency
Figure 5. Frequency Dependence of Responsivity
4.0
2
e min
E – Threshold Irradiance ( mW/m )
16911
Correlation with ambient light sources:
3.5
3.0
2
10W/m
^1.4klx (Std.illum.A,T=2855K)
2
10W/m
^8.2klx (Daylight,T=5900K)
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01 0.10 1.00 10.00 100.00
E – Ambient DC Irradiance (W/m2)
2
2.0
f(E) = f
1.6
0
1.2
0.8
0.4
e min
E – Threshold Irradiance ( mW/m )
0.0
0.0 0.4 0.8 1.2 1.6
94 8147
E – Field Strength of Disturbance ( kV/m )
Figure 8. Sensitivity vs. Electric Field Disturbances
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Max. Envelope Duty Cycle
0.1
f = 38 kHz, Ee = 2 mW/m
0.0
0 20 40 60 80 100 120
16913
Burst Length ( number of cycles / burst )
2
2.0
Figure 6. Sensitivity in Bright Ambient
2.0
2
f = f
1.5
o
f = 10 kHz
1.0
f = 1 kHz
0.5
e min
E – Threshold Irradiance ( mW/m )
0.0
f = 100 Hz
0.1 1.0 10.0 100.0 1000.0
16912
DV
– AC Voltage on DC Supply Voltage (mV)
sRMS
Figure 7. Sensitivity vs. Supply Voltage Disturbances
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Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.6
2
Sensitivity in dark ambient
0.5
0.4
0.3
0.2
0.1
e min
E – Threshold Irradiance ( mW/m )
0.0
–30–150 153045607590
T
16918
– Ambient Temperature ( qC )
amb
Figure 10. Sensitivity vs. Ambient Temperature
Document Number 82187
Rev. 3, 14-Aug-03
VISHAY
1.2
1.0
0.8
0.6
0.4
rel
0.2
S ( ) – Relative Spectral Sensitivityl
0.0
750 850 950 1050 1150
16919
Figure 11. Relative Spectral Sensitivity vs. Wavelength
l – Wavelength ( nm )
0°
10° 20°
TSOP362..
Vishay Semiconductors
30°
1.0
0.9
0.8
0.7
0.4 0.2 0 0.2 0.4
0.6
d
16801
- Relative Transmission Distance
rel
Figure 12. Directivity
1.0
0.9
2
0.8
0.7
0.6
0.5
0.4
0.3
e min
0.2
E – Sensitivity ( mW/m )
0.1
0.0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
17185
VS – Supply Voltage ( V )
40°
50°
60°
70°
80°
0.6
Figure 13. Sensitivity vs. Supply Voltage
Document Number 82187
Rev. 3, 14-Aug-03
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TSOP362..
Vishay Semiconductors
Suitable Data Format
The circuit of the TSOP362.. is designed in that way
that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used
to suppress such disturbances.
The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 70
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the
data stream. This gap time should be at least 6 times
longer than the burst.
• Up to 800 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code (repetitive pulse), NEC Code (repetitive data),
Toshiba Micom Format, Sharp Code, RC5 Code,
RC6 Code, R-2000 Code, Sony Code.
When a disturbance signal is applied to the
TSOP362.. it can still receive the data signal. However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP362.. are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other frequency
• Signals from fluorescent lamps with electronic ballast with high or low modulation
(see Figure 14 or 15).
VISHAY
IR Signal
IR Signal from fluorescent
lamp with low modulation
0 5 10 15 20
16920
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
IR Signal from fluorescent
lamp with high modulation
IR Signal
0 5 10 15 20
16921
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
Time ( ms )
Time ( ms )
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Document Number 82187
Rev. 3, 14-Aug-03
VISHAY
Package Dimensions in mm
TSOP362..
Vishay Semiconductors
Assembly Instructions
Reflow Soldering
• Reflow soldering must be done within 72 hours
stored under max. 30 °C, 60 % RH after opening
envelop
Document Number 82187
Rev. 3, 14-Aug-03
16629
• Recommended soldering paste (composition: SN 63
%, Pb 37 %) Melting temperature 178 °C to 192 °C
• Apply solder paste to the specified soldering pads,
by using a dispenser or by screen printing.
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TSOP362..
Vishay Semiconductors
VISHAY
• Recommended thickness of metal mask is 0.2 mm
for screen printing.
• The recommended reflow furnace is a combinationtype with upper and lower heaters.
• Set the furnace temperatures for pre-heating and
heating in accordance with the reflow temperature
profile as shown below. Excercise extreme care to
keep the maximum temperature below 230 °C. The
following temperature profile means the tempera ture
at the device surface. Since temperature differ ence
occurs between the work and the surface of the circuit
board depending on the pes of circuit board or reflow
furnace, the operating conditions should be verified
prior to start of operation.
• Handling after reflow should be done only after the
work surface has been cooled off.
Manual Soldering
• Use the 6/4 solder or the solder containing silver.
• Use a soldering iron of 25 W or smaller. Adjust the
temperature of the soldering iron below 300 °C.
• Finish soldering within three seconds.
• Handle products only after the temperature is cooled
off.
Cleaning
• Perform cleaning after soldering strictly in conformance to the following conditions:
Cleaning agent:
2-propanol (isopropyl alcohol)
Commercially available grades (industrial use) should
be used.
Demineralized or distilled water having a resistivity of
not less than 500 mΩ corresponding to a conductivity
of 2 mS/m.
• Temperature and time: 30 seconds under the temperature below 50 °C or 3 minutes below 30 °C.
• Ultrasonic cleaning: Below 20 W.
Reflow Solder Profile
240
220
200
180
160
q
140
120
100
80
Temperature ( C )
60
40
20
0
0 50 100 150 200 250 300 350
2 qC - 4 qC/s
120 s - 180 s
2 qC - 4 qC/s
Time ( s )
90 s max
10 s max.
@ 230 qC
16944
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Document Number 82187
Rev. 3, 14-Aug-03
VISHAY
Taping Version TSOP..TT
TSOP362..
Vishay Semiconductors
Document Number 82187
Rev. 3, 14-Aug-03
16584
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9
TSOP362..
Vishay Semiconductors
Taping Version TSOP..TR
VISHAY
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10
16585
Document Number 82187
Rev. 3, 14-Aug-03
VISHAY
Reel Dimensions
TSOP362..
Vishay Semiconductors
Document Number 82187
Rev. 3, 14-Aug-03
16734
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11
TSOP362..
Vishay Semiconductors
Leader and Trailer
Trailer Leader
VISHAY
no devices no devices
min. 200 min. 400
devices
Cover Tape Peel Strength
According to DIN EN 60286-3
0.1 to 1.3 N
300 ± 10 mm/min
165 ° - 180 ° peel angle
Label
Standard bar code labels for finished goods
The standard bar code labels are product labels and
used for identification of goods. The finished goods
are packed in final packing area. The standard packing units are labeled with standard bar code labels
before transported as finished goods to warehouses.
The labels are on each packing unit and contain
Vishay Semiconductor GmbH specific data.
StartEnd
96 11818
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Document Number 82187
Rev. 3, 14-Aug-03
VISHAY
Vishay Semiconductor GmbH standard bar code product label (finished goods)
Plain Writing Abbreviation
Item-Description
Item-Number
Selection-Code
LOT-/ Serial-Number
Data-Code
Plant-Code
Quantity
Accepted by:
Packed by:
Mixed Code Indicator
Origin
–
INO
SEL
BATCH
COD
PTC
QTY
ACC
PCK
MIXED CODE
xxxxxxx
+
Company Logo
TSOP362..
Vishay Semiconductors
Length
18
8
3
10
3 (YWW)
2
8
–
–
–
Long Bar Code Top Type
Item-Number
Plant-Code
Sequence-Number
Quantity
Total Length
Short Bar Code Bottom
Selection–Code
Data-Code
Batch-Number
Filter
Total Length
N8
N
X
N
–
Type
X3
N
X
–
–
Dry Packing
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during transportation and storage.
Aluminium bag
Label
Length
2
3
8
21
Length
3
10
1
17
16942
Final Packing
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping purposes.
Reel
15973
Document Number 82187
Rev. 3, 14-Aug-03
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13
TSOP362..
Vishay Semiconductors
Recommended Method of Storage
Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 72 hours under these conditions
moisture content will be too high for reflow soldering.
In case of moisture absorption, the devices will
recover to the former condition by drying under the
following condition:
192 hours at 40 °C + 5 °C/ -0 °C and < 5 % RH (dry
air/ nitrogen) or
96 hours at 60 °C +5 °C and < 5 % RH for all device
containers or
24 hours at 125 °C +5 °C not suitable for reel or
tubes.
An EIA JEDEC Standard JESD22-A112 Level 4 label
is included on all dry bags.
VISHAY
16962
16943
Example of JESD22-A112 Level 4 label
ESD Precaution
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices especially when they are removed from the Antistatic
Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging.
Vishay Semiconductors Standard Bar-Code Labels
The Vishay Semiconductors standard bar-code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Telefunken
specific data.
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14
Document Number 82187
Rev. 3, 14-Aug-03
VISHAY
TSOP362..
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82187
Rev. 3, 14-Aug-03
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