VISHAY TSOP11KA1 Technical data

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VISHAY
TSOP11..KA1
Vishay Semiconductors
Description
The TSOP11..KA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.
The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes and high data rates.
12797
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against electrical field distur­bance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
Special Features
• Enhanced data rate up to 4000 bit/s
• Operation with short bursts possible ( 6 cycles/ burst)
Block Diagram
2
V
S
3
OUT
1
GND
PIN
AGCInput
Band Pass
Control
25 k
Demo­dulator
Circuit
Parts Table
Part Carrier Frequency
TSOP1130KA1 30 kHz
TSOP1133KA1 33 kHz
TSOP1136KA1 36 kHz
TSOP1137KA1 36.7 kHz
TSOP1138KA1 38 kHz
TSOP1140KA1 40 kHz
TSOP1156KA1 56 kHz
Application Circuit
Transmitter
with
TSALxxxx
R1+C1recommended to suppress power supply disturbances.
The output voltage should not be hold continuously at a voltage below V
TSOPxxxx
Circuit
=
3.3 V by the external circuit.
O
V
S
OUT
GND
R1=100
C1=
4.7 µF
+V
µC
V
O
GND
S
Document Number 82007
Rev. 9, 15-Oct-2002
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1
TSOP11..KA1
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Supply Voltage (Pin 2) V
Supply Current (Pin 2) I
Output Voltage (Pin 3) V
Output Current (Pin 3) I
Junction Temperature T
Storage Temperature Range T
Operating Temperature Range T
Power Consumption (T
Soldering Temperature t 5 s T
Electrical and Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Paramete r Tes t c o nd it i on Symbol Min Typ . Max Unit
Supply Current (Pin 2) VS = 5 V, Ev = 0 I
VS = 5 V, Ev = 40 klx, sunlight I
Supply Voltage (Pin 2) V
Transmission Distance Ev = 0, test signal see fig.3, IR
diode TSAL6200, I
Output Voltage Low (Pin 3)
Irradiance (30 - 40 kHz) Test signal see fig.1 E
Irradiance (56 kHz) Test signal see fig.1 E
Irradiance Test signal see fig.1 E
Directivity Angle of half transmission distance ϕ
I
= 0.5 mA, Ee = 0.7 mW/m2, f
OSL
= f
, test signal see fig.1
o
Test signal see fig.3 E
Test signal see fig.3 E
85 °C) P
amb
SD
SH
S
0.8 1.2 1.5 mA
4.5 5.5 V
d 35 m
= 0.4 A
F
V
OSL
e min
e min
e min
e min
e max
1/2
30
VISHAY
S
S
O
O
j
stg
amb
tot
sd
1.5 mA
0.4 0.6
0.35 0.5
0.45 0.7
0.40 0.6
± 45 deg
- 0.3 to +
6.0
5 mA
- 0.3 to +
6.0
5 mA
100 °C
- 25 to + 85 °C
- 25 to + 85 °C
50 mW
260 °C
250 mV
mW/m
mW/m
mW/m
mW/m
W/m
V
V
2
2
2
2
2
Typical Characteristics (T
Optical Test Signal
E
e
(IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms)
*)
t
pi
T
*) tpiw 6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
Document Number 82007
Rev. 9, 15-Oct-2002
1)
3/f0 < td < 9/f
2)
tpi – 4/f0 < tpo < tpi + 6/f
1)
t
d
0
2)
t
po
0
Figure 1. Output Function
= 25°C unless otherwise specified)
amb
0.35
0.30
t
14337
t
0.25
0.20
0.15
0.10
0.05
po
t – Output Pulse Width ( ms )
0.00
16907
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Output Pulse
Input Burst Duration
l = 950 nm,
optical test signal, fig.1
0.1 1.0 10.0 100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
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2
VISHAY
Optical Test Signal
E
e
600 ms 600 ms
Output Signal, ( see Fig.4 )
V
O
V
OH
V
OL
T = 60 ms
T
on
TSOP11..KA1
Vishay Semiconductors
4.0
2
t
94 8134
e min
E – Threshold Irradiance ( mW/m )
T
off
t
16911
Correlation with ambient light sources:
3.5
3.0
2
10W/m
^1.4klx (Std.illum.A,T=2855K)
2
^8.2klx (Daylight,T=5900K)
10W/m
2.5
2.0
1.5 Ambient, l = 950 nm
1.0
0.5
0.0
0.01 0.10 1.00 10.00 100.00
E – Ambient DC Irradiance (W/m2)
Figure 3. Output Function
1.0
0.9
0.8 To n
0.7
0.6
0.5
0.4
To ff
0.3
0.2
0.1
on off
T ,T – Output Pulse Width ( ms )
0.0
l = 950 nm,
optical test signal, fig.3
0.1 1.0 10.0 100.0 1000.010000.0
16910
Ee – Irradiance ( mW/m2 )
Figure 4. Output Pulse Diagram
1.2
1.0
0.8
0.6
Figure 6. Sensitivity in Bright Ambient
2.0
2
f = f
1.5
o
f = 10 kHz
1.0 f = 1 kHz
0.5
e min
E – Threshold Irradiance ( mW/m )
0.0
f = 100 Hz
0.1 1.0 10.0 100.0 1000.0
16912
DV
– AC Voltage on DC Supply Voltage (mV)
sRMS
Figure 7. Sensitivity vs. Supply Voltage Disturbances
2
2.0
f(E) = f
1.6
1.2
0
0.4
0.2
e min e
E / E – Rel. Responsivity
f = f0"5%
Df ( 3dB ) = f
/7
0
0.0
0.7 0.9 1.1 1.3
16926
f/f0 – Relative Frequency
Figure 5. Frequency Dependence of Responsivity
Document Number 82007
Rev. 9, 15-Oct-2002
0.8
0.4
e min
E – Threshold Irradiance ( mW/m )
0.0
0.0 0.4 0.8 1.2 1.6
94 8147
E – Field Strength of Disturbance ( kV/m )
Figure 8. Sensitivity vs. Electric Field Disturbances
2.0
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