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VISHAY
TSOP11..KA1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP11..KA1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with short burst transmission codes and
high data rates.
12797
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against electrical field disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
Special Features
• Enhanced data rate up to 4000 bit/s
• Operation with short bursts possible (≥ 6 cycles/
burst)
Block Diagram
2
V
S
3
OUT
1
GND
PIN
AGCInput
Band
Pass
Control
25 kΩ
Demodulator
Circuit
Parts Table
Part Carrier Frequency
TSOP1130KA1 30 kHz
TSOP1133KA1 33 kHz
TSOP1136KA1 36 kHz
TSOP1137KA1 36.7 kHz
TSOP1138KA1 38 kHz
TSOP1140KA1 40 kHz
TSOP1156KA1 56 kHz
Application Circuit
Transmitter
with
TSALxxxx
R1+C1recommended to suppress power supply
disturbances.
The output voltage should not be hold continuously at
a voltage below V
TSOPxxxx
Circuit
=
3.3 V by the external circuit.
O
V
S
OUT
GND
R1=100Ω
C1=
4.7 µF
+V
µC
V
O
GND
S
Document Number 82007
Rev. 9, 15-Oct-2002
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1
TSOP11..KA1
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Supply Voltage (Pin 2) V
Supply Current (Pin 2) I
Output Voltage (Pin 3) V
Output Current (Pin 3) I
Junction Temperature T
Storage Temperature Range T
Operating Temperature Range T
Power Consumption (T
Soldering Temperature t ≤ 5 s T
Electrical and Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Paramete r Tes t c o nd it i on Symbol Min Typ . Max Unit
Supply Current (Pin 2) VS = 5 V, Ev = 0 I
VS = 5 V, Ev = 40 klx, sunlight I
Supply Voltage (Pin 2) V
Transmission Distance Ev = 0, test signal see fig.3, IR
diode TSAL6200, I
Output Voltage Low (Pin 3)
Irradiance (30 - 40 kHz) Test signal see fig.1 E
Irradiance (56 kHz) Test signal see fig.1 E
Irradiance Test signal see fig.1 E
Directivity Angle of half transmission distance ϕ
I
= 0.5 mA, Ee = 0.7 mW/m2, f
OSL
= f
, test signal see fig.1
o
Test signal see fig.3 E
Test signal see fig.3 E
≤ 85 °C) P
amb
SD
SH
S
0.8 1.2 1.5 mA
4.5 5.5 V
d 35 m
= 0.4 A
F
V
OSL
e min
e min
e min
e min
e max
1/2
30
VISHAY
S
S
O
O
j
stg
amb
tot
sd
1.5 mA
0.4 0.6
0.35 0.5
0.45 0.7
0.40 0.6
± 45 deg
- 0.3 to +
6.0
5 mA
- 0.3 to +
6.0
5 mA
100 °C
- 25 to + 85 °C
- 25 to + 85 °C
50 mW
260 °C
250 mV
mW/m
mW/m
mW/m
mW/m
W/m
V
V
2
2
2
2
2
Typical Characteristics (T
Optical Test Signal
E
e
(IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms)
*)
t
pi
T
*) tpiw 6/fo is recommended for optimal function
Output Signal
V
O
V
OH
V
OL
Document Number 82007
Rev. 9, 15-Oct-2002
1)
3/f0 < td < 9/f
2)
tpi – 4/f0 < tpo < tpi + 6/f
1)
t
d
0
2)
t
po
0
Figure 1. Output Function
= 25°C unless otherwise specified)
amb
0.35
0.30
t
14337
t
0.25
0.20
0.15
0.10
0.05
po
t – Output Pulse Width ( ms )
0.00
16907
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Output Pulse
Input Burst Duration
l = 950 nm,
optical test signal, fig.1
0.1 1.0 10.0 100.0 1000.010000.0
Ee – Irradiance ( mW/m2 )
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2
VISHAY
Optical Test Signal
E
e
600 ms 600 ms
Output Signal, ( see Fig.4 )
V
O
V
OH
V
OL
T = 60 ms
T
on
TSOP11..KA1
Vishay Semiconductors
4.0
2
t
94 8134
e min
E – Threshold Irradiance ( mW/m )
T
off
t
16911
Correlation with ambient light sources:
3.5
3.0
2
10W/m
^1.4klx (Std.illum.A,T=2855K)
2
^8.2klx (Daylight,T=5900K)
10W/m
2.5
2.0
1.5
Ambient, l = 950 nm
1.0
0.5
0.0
0.01 0.10 1.00 10.00 100.00
E – Ambient DC Irradiance (W/m2)
Figure 3. Output Function
1.0
0.9
0.8
To n
0.7
0.6
0.5
0.4
To ff
0.3
0.2
0.1
on off
T ,T – Output Pulse Width ( ms )
0.0
l = 950 nm,
optical test signal, fig.3
0.1 1.0 10.0 100.0 1000.010000.0
16910
Ee – Irradiance ( mW/m2 )
Figure 4. Output Pulse Diagram
1.2
1.0
0.8
0.6
Figure 6. Sensitivity in Bright Ambient
2.0
2
f = f
1.5
o
f = 10 kHz
1.0
f = 1 kHz
0.5
e min
E – Threshold Irradiance ( mW/m )
0.0
f = 100 Hz
0.1 1.0 10.0 100.0 1000.0
16912
DV
– AC Voltage on DC Supply Voltage (mV)
sRMS
Figure 7. Sensitivity vs. Supply Voltage Disturbances
2
2.0
f(E) = f
1.6
1.2
0
0.4
0.2
e min e
E / E – Rel. Responsivity
f = f0"5%
Df ( 3dB ) = f
/7
0
0.0
0.7 0.9 1.1 1.3
16926
f/f0 – Relative Frequency
Figure 5. Frequency Dependence of Responsivity
Document Number 82007
Rev. 9, 15-Oct-2002
0.8
0.4
e min
E – Threshold Irradiance ( mW/m )
0.0
0.0 0.4 0.8 1.2 1.6
94 8147
E – Field Strength of Disturbance ( kV/m )
Figure 8. Sensitivity vs. Electric Field Disturbances
2.0
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TSOP11..KA1
Vishay Semiconductors
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Max. Envelope Duty Cycle
0.1
0.0
16914
f = 38 kHz, Ee = 2 mW/m
0 20 40 60 80 100 120
Burst Length ( number of cycles / burst )
VISHAY
0q
10q 20q
1.0
0.9
0.8
2
0.7
0.4 0.2 0 0.2 0.4
0.6
d
95 11340p2
– Relative Transmission Distance
rel
30q
40q
50q
60q
70q
80q
0.6
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.6
2
Sensitivity in dark ambient
0.5
0.4
0.3
0.2
0.1
e min
E – Threshold Irradiance ( mW/m )
0.0
–30–150 153045607590
T
16918
– Ambient Temperature ( qC )
amb
Figure 10. Sensitivity vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
750 850 950 1050
94 8408
l – Wavelength ( nm )
1150
Figure 11. Relative Spectral Sensitivity vs. Wavelength
95 11339p2
Figure 12. Horizontal Directivity ϕ
0q
1.0
0.9
0.8
0.7
0.4 0.2 0 0.2 0.4
0.6
d
– Relative Transmission Distance
rel
Figure 13. Vertical Directivity ϕ
10q 20q
x
30q
40q
50q
60q
70q
80q
0.6
y
Suitable Data Format
The circuit of the TSOP11..KA1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpassfilter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
• For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the
Document Number 82007
Rev. 9, 15-Oct-2002
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4
VISHAY
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP11..KA1 it can still receive the data signal. However the sensitivity is reduced to that level that no
unexpected pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP11..KA1 are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other frequency
• Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below).
TSOP11..KA1
Vishay Semiconductors
IR Signal
IR Signal from fluorescent
lamp with low modulation
0 5 10 15 20
16920
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Time ( ms )
Document Number 82007
Rev. 9, 15-Oct-2002
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5
TSOP11..KA1
Vishay Semiconductors
Package Dimensions in mm
VISHAY
Document Number 82007
Rev. 9, 15-Oct-2002
12783
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6
VISHAY
TSOP11..KA1
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82007
Rev. 9, 15-Oct-2002
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