VISHAY TSML1000, TSML1020, TSML1030, TSML1040 Technical data
TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSML1000 series are high efficiency infrared emitting
diodes in GaAlAs on GaAs technology molded in
clear SMD package.
This technology represents best performance for radiant power under pulse conditions, forward voltage
and reliability.
Features
• Outstanding high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity ϕ = ± 12°
• Peak wavelength λ
• High reliability
• Matched Phototransistor series: TEMT1000
• Versatile terminal configurations
• Lead-free component
= 950 nm
p
TSML1000
TSML1030
TSML1020
TSML1040
16852
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
For remote control
Photointerrupters
Punched tape readers
Encoder
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Forward current I
Peak Forward Current t
Surge Forward Current t
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t ≤ 5 sec T
Thermal Resistance Junction/
Ambient
/T = 0.5, tp = 100 µsIFM200 mA
p
= 100 µsI
p
Basic Characteristics
T
= 25 °C, unless otherwise specified
amb
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward Voltage I
Temp. Coefficient of V
F
= 20 mA, tp = 20 ms V
F
I
= 1 A, tp = 100 µsV
F
IF = 1 mA TK
F
F
VF
R
F
FSM
amb
stg
sd
thJA
R
V
j
5V
100 mA
1.0 A
190 mW
100 °C
- 40 to + 85 °C
- 40 to + 100 °C
<260 °C
400 °C
1.2 1.5 V
2.6 V
- 1.85 mV/K
Document Number 81033
Rev. 1.8, 08-Mar-05
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TSML1000 / 1020 / 1030 / 1040
VISHAY
Vishay Semiconductors
Parameter Test condition Symbol Min Ty p. Max Unit
Reverse Current VR = 5 V I
Junction capacitance V
Radiant Intensity I
Radiant Power I
Temp. Coefficient of φ
e
= 0 V, f = 1 MHz, E = 0 C
R
= 20 mA, tp = 20 ms I
F
= 100 mA, tp = 20 ms φ
F
IF = 20 mA TKφ
R
j
e
e
e
3715mW/sr
25 pF
35 mW
- 0.6 %/K
10 µA
Angle of Half Intensity ϕ ±12 deg
Peak Wavelength I
Spectral Bandwidth I
Temp. Coefficient of λ
p
Rise Time I
Fall Time I
= 100 mA λ
F
= 100 mA ∆λ 50 nm
F
IF = 100 mA TKλ
= 100 mA t
F
= 100 mA t
F
p
p
r
f
950 nm
0.2 nm/K
800 ns
800 ns
Virtual Source Diameter ∅ 1.2 mm
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
200
180
160
140
120
100
80
60
40
V
P - Power Dissipation ( mW )
20
16187
0
T
- Ambient Temperature ( ° C)
amb
1009080706050403020100
Figure 1. Power Dissipation vs. Ambient Temperature
120
100
80
60
40
F
I - Forward Current ( mA )
20
10000
0.1
0.05
0.02
1000
0.2
0.5
100
1.0
10
0.01 0.10 1.00 10.00 100.00
tp- Pulse Duration ( ms )
14335
F
I - Forward Current ( mA )
tp/T = 0.01
Figure 3. Pulse Forward Current vs. Pulse Duration
4
10
3
10
2
10
t
1
10
F
I - Forward Current ( mA )
p
tp= 100 s
/T = 0.001
µ
0
T
16188
- Ambient Temperature ( ° C)
amb
Figure 2. Forward Current vs. Ambient Temperature
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2
0
13600
10
43210
VF- Forward Voltage(V)
1009080706050403020100
Figure 4. Forward Current vs. Forward Voltage
Document Number 81033
Rev. 1.8, 08-Mar-05
VISHAY
TSML1000 / 1020 / 1030 / 1040
Vishay Semiconductors
1.2
1.1
IF=10mA
1.0
0.9
0.8
Frel
V - Relative Forward Voltage
94 7990
0.7
T
- Ambient Temperature ( °C)
amb
100806040200
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1000
100
10
1
e
I - Radiant Intensity ( mW/sr )
16189
0.1
10
0
1
10
I
- Forward Current ( mA )
F
10
2
10
3
10
4
1.6
1.2
IF=20mA
Φ
0.8
e rel e rel
I;
0.4
0
-10 10 500 100
T
94 7993
- Ambient Temperature ( °C)
amb
140
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
1.0
0.75
0.5
- Relative Radiant Power
0.25
e rel
Φ
0
900 950
94 7994
IF= 100 mA
-
Wavelength ( nm )
λ
1000
Figure 6. Radiant Intensity vs. Forward Current
1000
100
10
- Radiant Power ( mW )
1
e
Φ
0.1
1
10
IF- Forward Current ( mA )
13602
10
0
Figure 7. Radiant Power vs. Forward Current
Document Number 81033
Rev. 1.8, 08-Mar-05
10
Figure 9. Relative Radiant Power vs. Wavelength
0 °°°
10 20
30°
40°
1.0
0.9
0.8
rel
S - Relative Intensity
0.7
10
3
10
4
0.4 0.2 0 0.2 0.4
18234
0.6
2
50°
60°
70°
80°
0.6
Figure 10. Relative Radiant Intensity vs. Angular Displacement
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