VISHAY TSMF1000 Technical data
Vishay Telefunken
High Speed IR Emitting Diode in ø SMD Package
Description
TSMF1000 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology molded in clear SMD
package
In comparison with the standard GaAs on GaAs
technology these emitters achieve about 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
D
Extra high radiant power
D
Low forward voltage
D
Suitable for high pulse current operation
D
Angle of half intensity ϕ = ± 17
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 870 nm
°
TSMF1000
15 969
Applications
IrDA compatible
Free air transmission systems
For control and drive circuits
Photointerrupters
Punched tape readers
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x 5sec, 2 mm from case T
R
F
FM
FSM
V
amb
stg
sd
5 V
100 mA
200 mA
1.0 A
mW
j
100
–40...+85
–40...+85
260
°
C
°
C
°
C
°
C
Document Number 81061
Rev. 4, 31-Mar-00
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
TSMF1000
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1.0 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 20 mA TK
F
F
VF
R
j
e
e
f
e
f
e
Angle of Half Intensity ϕ ±17 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
l
Dl
p
l
p
r
f
1.4 1.7 V
2.4 V
–1.7 mV/K
10
m
160 pF
20 mW/sr
200 mW/sr
35 mW
–0.6 %/K
870 nm
40 nm
0.2 nm/K
30 ns
30 ns
A
Typical Characteristics (T
4
10
3
10
2
10
1
10
F
I – Forward Current ( mA )
0
10
0123
V
94 7952 e
– Forward Voltage ( V )
F
Figure 1. Forward Current vs. Forward Voltage
tp = 100 ms
t
/T = 0.001
p
= 25_C unless otherwise specified)
amb
1.2
1.1
1.0
0.9
Frel
0.8
V – Relative Forward Voltage
94 7990 e
0.7
020406080
T
– Ambient Temperature ( °C )
amb
4
Figure 2. Relative Forward Voltage vs.
Ambient Temperature
IF = 10 mA
100
www.vishay.de • FaxBack +1-408-970-5600
2 (4) Rev. 4, 31-Mar-00
Document Number 81061
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