Vishay Telefunken
High Speed IR Emitting Diode in ø SMD Package
Description
TSMF1000 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology molded in clear SMD
package
In comparison with the standard GaAs on GaAs
technology these emitters achieve about 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
D
Extra high radiant power
D
Low forward voltage
D
Suitable for high pulse current operation
D
Angle of half intensity ϕ = ± 17
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 870 nm
°
TSMF1000
15 969
Applications
IrDA compatible
Free air transmission systems
For control and drive circuits
Photointerrupters
Punched tape readers
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x 5sec, 2 mm from case T
R
F
FM
FSM
V
amb
stg
sd
5 V
100 mA
200 mA
1.0 A
mW
j
100
–40...+85
–40...+85
260
°
C
°
C
°
C
°
C
Document Number 81061
Rev. 4, 31-Mar-00
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1 (4)
TSMF1000
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1.0 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 20 mA TK
F
F
VF
R
j
e
e
f
e
f
e
Angle of Half Intensity ϕ ±17 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
l
Dl
p
l
p
r
f
1.4 1.7 V
2.4 V
–1.7 mV/K
10
m
160 pF
20 mW/sr
200 mW/sr
35 mW
–0.6 %/K
870 nm
40 nm
0.2 nm/K
30 ns
30 ns
A
Typical Characteristics (T
4
10
3
10
2
10
1
10
F
I – Forward Current ( mA )
0
10
0123
V
94 7952 e
– Forward Voltage ( V )
F
Figure 1. Forward Current vs. Forward Voltage
tp = 100 ms
t
/T = 0.001
p
= 25_C unless otherwise specified)
amb
1.2
1.1
1.0
0.9
Frel
0.8
V – Relative Forward Voltage
94 7990 e
0.7
020406080
T
– Ambient Temperature ( °C )
amb
4
Figure 2. Relative Forward Voltage vs.
Ambient Temperature
IF = 10 mA
100
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Document Number 81061
1.6
TSMF1000
Vishay Telefunken
4
10
1.2
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 7993 e
– Ambient Temperature ( °C )
amb
Figure 3. Rel. Radiant Intensity\Power vs.
Ambient Temperature
Dimensions in mm
IF = 20 mA
140
F
I – Forward Current ( mA )
94 8880
3
10
2
10
1
10
0
10
0123
V
– Forward Voltage ( V )
F
Figure 4. Forward Current vs.
Forward Voltage
4
Document Number 81061
Rev. 4, 31-Mar-00
16159
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3 (4)
TSMF1000
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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4 (4) Rev. 4, 31-Mar-00
Document Number 81061
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