VISHAY TSHA440 Technical data
VISHAY
94 8398
TSHA440.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about
50 % radiant power improvement.
Features
• Extra high radiant power
• High radiant intensity for long transmission distance
• Suitable for high pulse current operation
• Standard T-1(∅ 3 mm) package for low space
application
• Angle of half intensity ϕ = ± 20°
• Peak wavelength λ
= 875 nm
p
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control and free air transmission systems with high power requirements in combination
with PIN photodiodes or phototransistors.
Because of the very low radiance absorption in glass
at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission
range between emitter and detector.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Forward current I
Peak Forward Current t
Surge Forward Current t
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t ≤ 5 sec, 2 mm from case T
Thermal Resistance Junction/
Ambient
Document Number 81017
Rev. 1.4, 11-May-04
/T = 0.5, tp = 100 µsIFM200 mA
p
= 100 µsI
p
R
F
FSM
amb
stg
sd
thJA
R
V
j
5V
100 mA
2A
180 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
450 K/W
www.vishay.com
1
TSHA440.
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Typ . Max Unit
Forward Voltage I
Temp. Coefficient of V
F
Reverse Current V
Junction capacitance V
= 100 mA, tp = 20 ms V
F
= 1.5 A, tp = 100 µsV
I
F
IF = 100 mA TK
= 5 V I
R
= 0 V, f = 1 MHz, E = 0 C
R
F
F
VF
R
j
1.5 1.8 V
3.2 4.9 V
- 1.6 mV/K
100 µA
20 pF
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Typ . Max Unit
Temp. Coefficient of φ
e
Angle of Half Intensity ϕ ± 20 deg
Peak Wavelength I
Spectral Bandwidth I
Temp. Coefficient of λ
p
Rise Time I
Fall Time I
Virtual Source Diameter ∅ 1.8 mm
IF = 100 mA TKφ
= 100 mA λ
F
= 100 mA ∆λ 80 nm
F
IF = 100 mA TKλ
= 100 mA t
F
= 1.5 A t
I
F
= 100 mA t
F
I
= 1.5 A t
F
e
p
p
r
r
f
f
- 0.7 %/K
875 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
Type Dedicated Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min Typ. Max Unit
Radiant Intensity I
Radiant Power I
= 100 mA, tp = 20 ms TSHA4400 I
F
= 1.5 mA, tp = 100 µs TSHA4400 I
I
F
= 100 mA, tp = 20 ms TSHA4400 φ
F
TSHA4401 I
TSHA4401 I
TSHA4401 φ
e
e
e
e
e
e
12 20 60 mW/sr
16 30 60 mW/sr
140 240 mW/sr
190 360 mW/sr
20 mW
24 mW
www.vishay.com
2
Document Number 81017
Rev. 1.4, 11-May-04
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
4
250
10
TSHA440.
200
150
R
thJA
100
50
V
P - Power Dissipation ( mW )
12789
0
T
amb
40 1008060200
- Ambient Temperature ( °C)
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
75
50
25
F
I - Forward Current ( mA )
94 7941
0
T
amb
40 1008060200
- Ambient Temperature ( °C)
Figure 2. Forward Current vs. Ambient Temperature
tp= 100 µ s
/T = 0.001
t
p
43210
VF- Forward Voltage(V)
F
I - Forward Current ( mA )
94 8005
10
10
10
3
2
1
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF=10mA
1.0
0.9
0.8
Frel
V - Relative Forward Voltage
94 7990
0.7
T
- Ambient Temperature ( ° C)
amb
100806040200
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1
10
tp/T = 0.01, IFM=2A
0.02
0
10
0.05
0.1
0.2
F
I - Forward Current(A)
0.5
-1
94 7947
10
10
10
-1
-2
tp- Pulse Duration ( ms )
10
0
10
1
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81017
Rev. 1.4, 11-May-04
10
1000
TSHA 4401
100
TSHA 4400
10
e
I – Radiant Intensity ( mW/sr )
94 7942
1
10
10
1
0
10
2
10
3
10
4
IF– Forward Current ( mA )
2
Figure 6. Radiant Intensity vs. Forward Current
www.vishay.com
3
Loading...