VISHAY
94 8398
TSHA440.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about
50 % radiant power improvement.
Features
• Extra high radiant power
• High radiant intensity for long transmission distance
• Suitable for high pulse current operation
• Standard T-1(∅ 3 mm) package for low space
application
• Angle of half intensity ϕ = ± 20°
• Peak wavelength λ
= 875 nm
p
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control and free air transmission systems with high power requirements in combination
with PIN photodiodes or phototransistors.
Because of the very low radiance absorption in glass
at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission
range between emitter and detector.
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Forward current I
Peak Forward Current t
Surge Forward Current t
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t ≤ 5 sec, 2 mm from case T
Thermal Resistance Junction/
Ambient
Document Number 81017
Rev. 1.4, 11-May-04
/T = 0.5, tp = 100 µsIFM200 mA
p
= 100 µsI
p
R
F
FSM
amb
stg
sd
thJA
R
V
j
5V
100 mA
2A
180 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
450 K/W
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TSHA440.
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Typ . Max Unit
Forward Voltage I
Temp. Coefficient of V
F
Reverse Current V
Junction capacitance V
= 100 mA, tp = 20 ms V
F
= 1.5 A, tp = 100 µsV
I
F
IF = 100 mA TK
= 5 V I
R
= 0 V, f = 1 MHz, E = 0 C
R
F
F
VF
R
j
1.5 1.8 V
3.2 4.9 V
- 1.6 mV/K
100 µA
20 pF
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Typ . Max Unit
Temp. Coefficient of φ
e
Angle of Half Intensity ϕ ± 20 deg
Peak Wavelength I
Spectral Bandwidth I
Temp. Coefficient of λ
p
Rise Time I
Fall Time I
Virtual Source Diameter ∅ 1.8 mm
IF = 100 mA TKφ
= 100 mA λ
F
= 100 mA ∆λ 80 nm
F
IF = 100 mA TKλ
= 100 mA t
F
= 1.5 A t
I
F
= 100 mA t
F
I
= 1.5 A t
F
e
p
p
r
r
f
f
- 0.7 %/K
875 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
Type Dedicated Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min Typ. Max Unit
Radiant Intensity I
Radiant Power I
= 100 mA, tp = 20 ms TSHA4400 I
F
= 1.5 mA, tp = 100 µs TSHA4400 I
I
F
= 100 mA, tp = 20 ms TSHA4400 φ
F
TSHA4401 I
TSHA4401 I
TSHA4401 φ
e
e
e
e
e
e
12 20 60 mW/sr
16 30 60 mW/sr
140 240 mW/sr
190 360 mW/sr
20 mW
24 mW
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Document Number 81017
Rev. 1.4, 11-May-04
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
4
250
10
TSHA440.
200
150
R
thJA
100
50
V
P - Power Dissipation ( mW )
12789
0
T
amb
40 1008060200
- Ambient Temperature ( °C)
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
75
50
25
F
I - Forward Current ( mA )
94 7941
0
T
amb
40 1008060200
- Ambient Temperature ( °C)
Figure 2. Forward Current vs. Ambient Temperature
tp= 100 µ s
/T = 0.001
t
p
43210
VF- Forward Voltage(V)
F
I - Forward Current ( mA )
94 8005
10
10
10
3
2
1
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF=10mA
1.0
0.9
0.8
Frel
V - Relative Forward Voltage
94 7990
0.7
T
- Ambient Temperature ( ° C)
amb
100806040200
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1
10
tp/T = 0.01, IFM=2A
0.02
0
10
0.05
0.1
0.2
F
I - Forward Current(A)
0.5
-1
94 7947
10
10
10
-1
-2
tp- Pulse Duration ( ms )
10
0
10
1
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81017
Rev. 1.4, 11-May-04
10
1000
TSHA 4401
100
TSHA 4400
10
e
I – Radiant Intensity ( mW/sr )
94 7942
1
10
10
1
0
10
2
10
3
10
4
IF– Forward Current ( mA )
2
Figure 6. Radiant Intensity vs. Forward Current
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TSHA440.
Vishay Semiconductors
1000
0 °°°
VISHAY
10 20
30°
100
10
- Radiant Power ( mW )
1
e
Φ
0.1
94 7943
10
0
10
1
IF- Forward Current ( mA )
10
2
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF=20mA
Φ
0.8
e rel e rel
I;
0.4
10
1.0
40°
0.9
0.8
0.7
e rel
I - Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
3
10
4
94 7944
0.6
50°
60°
70°
80°
0.6
Figure 10. Relative Radiant Intensity vs. Angular Displacement
0
-10 10 500 100
T
94 8020
- Ambient Temperature ( °C)
amb
140
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
1.25
1.0
0.75
0.5
- Relative Radiant Power
e
0.25
Φ
0
780 880
94 8000
IF= 100 mA
)/λ()
=
(
λ
ΦΦ
ee
rel
λ - Wavelength ( nm )
()
λ
Φ
pe
980
Figure 9. Relative Radiant Power vs. Wavelength
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Document Number 81017
Rev. 1.4, 11-May-04
VISHAY
C
A
Package Dimensions in mm
TSHA440.
Vishay Semiconductors
95 10951
Document Number 81017
Rev. 1.4, 11-May-04
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TSHA440.
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81017
Rev. 1.4, 11-May-04
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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