VISHAY TSDF1250, TSDF1250R, TSDF1250W, TSDF1250RW Technical data
查询TSDF1250供应商
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Silicon NPN Planar RF Transistor
Applications
For low noise applicatins such as power amplifiers,
mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to microwave
Features
D
Low power applications
D
Very low noise figure
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
frequencies.
D
High transition frequency fT = 12 GHz
D
Excellent large signal behaviour
21
94 9279
13 579
43
TSDF1250 Marking: F50
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
13 653
3
4
TSDF1250W Marking: WF5
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 566
43
TSDF1250R Marking: 50F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
TSDF1250RW Marking: W5F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
21
94 9278
2
34
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
95 10831
13 56613 654
9 V
6 V
2 V
60 mA
200 mW
150
–65 to +150
°
C
°
C
Document Number 85067
Rev. 5, 08-Jul-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 12 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 5 V, IC = 40 mA h
Electrical AC Characteristics
3
R
thJA
CES
CBO
EBO
(BR)CEO
CEsat
FE
450 K/W
6 V
0.1 0.5 V
50 100 150
100mA
100 nA
2
m
A
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 40 mA, f = 1 GHz f
Collector-base capacitance VCB = 1 V, f = 1 MHz C
Collector-emitter capacitance VCE = 1 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 5 mA,
ZS = Z
, ZL = 50 W, f = 2 GHz
Sopt
Power gain VCE = 5 V, IC = 5 mA,
f = 2 GHz (@F
opt
)
VCE = 5 V, IC = 40 mA,
Z
= Z
S
Transducer gain VCE = 5 V, IC = 40 mA,
, ZL = 50 W, f = 2 GHz
Sopt
S
Z0 = 50 W, f = 2 GHz
Third order intercept point at
VCE = 5 V, IC = 40 mA, f = 2 GHz IP
output
T
cb
ce
eb
12 GHz
0.6 pF
0.3 pF
0.7 pF
F 1.2 dB
G
G
pe
pe
21e
2
3
11 dB
13.5 dB
12.5 dB
28 dBm
www.vishay.de • FaxBack +1-408-970-5600
2 (6)
Document Number 85067
Rev. 5, 08-Jul-99
Loading...