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TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Silicon NPN Planar RF Transistor
Applications
For low noise applicatins such as power amplifiers,
mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to microwave
Features
D
Low power applications
D
Very low noise figure
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
frequencies.
D
High transition frequency fT = 12 GHz
D
Excellent large signal behaviour
21
94 9279
13 579
43
TSDF1250 Marking: F50
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
2
13 653
3
4
TSDF1250W Marking: WF5
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 566
43
TSDF1250R Marking: 50F
Plastic case (SOT 143R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
1
TSDF1250RW Marking: W5F
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
21
94 9278
2
34
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
95 10831
13 56613 654
9 V
6 V
2 V
60 mA
200 mW
150
–65 to +150
°
C
°
C
Document Number 85067
Rev. 5, 08-Jul-99
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TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 12 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 5 V, IC = 40 mA h
Electrical AC Characteristics
3
R
thJA
CES
CBO
EBO
(BR)CEO
CEsat
FE
450 K/W
6 V
0.1 0.5 V
50 100 150
100mA
100 nA
2
m
A
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 40 mA, f = 1 GHz f
Collector-base capacitance VCB = 1 V, f = 1 MHz C
Collector-emitter capacitance VCE = 1 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 5 mA,
ZS = Z
, ZL = 50 W, f = 2 GHz
Sopt
Power gain VCE = 5 V, IC = 5 mA,
f = 2 GHz (@F
opt
)
VCE = 5 V, IC = 40 mA,
Z
= Z
S
Transducer gain VCE = 5 V, IC = 40 mA,
, ZL = 50 W, f = 2 GHz
Sopt
S
Z0 = 50 W, f = 2 GHz
Third order intercept point at
VCE = 5 V, IC = 40 mA, f = 2 GHz IP
output
T
cb
ce
eb
12 GHz
0.6 pF
0.3 pF
0.7 pF
F 1.2 dB
G
G
pe
pe
21e
2
3
11 dB
13.5 dB
12.5 dB
28 dBm
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Document Number 85067
Rev. 5, 08-Jul-99
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Typical Characteristics (T
300
250
200
150
100
50
tot
P – Total Power Dissipation ( mW )
0
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )96 12159
amb
Figure 1. Total Power Dissipation vs.
Ambient Temperature
20
f = 1GHz
16
12
8
4
T
f – Transition Frequency ( GHz )
0
0 1020304050
IC – Collector Current ( mA )16130
V
CE
V
CE
= 25°C unless otherwise specified)
amb
1.0
0.8
0.6
0.4
0.2
cb
C – Collector Base Capacitance ( pF )
0
0246810
VCB – Collector Base Voltage ( V )16131
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
3.0
= 5V
= 2V
2.5
2.0
1.5
1.0
F – Noise Figure ( dB )
0.5
0
0 5 10 15 20 25 30
VCE = 5V
f = 2GHz
ZS = 50Ω
IC – Collector Current ( mA )16132
f= 1MHz
Figure 2. Transition Frequency vs. Collector Current
Document Number 85067
Rev. 5, 08-Jul-99
Figure 4. Noise Figure vs. Collector Current
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TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Dimensions of TSDF1250 in mm
Dimensions of TSDF1250R in mm
96 12240
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4 (6)
96 12239
Document Number 85067
Rev. 5, 08-Jul-99
TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Dimensions of TSDF1250W in mm
Vishay Telefunken
Dimensions of TSDF1250RW in mm
96 12237
Document Number 85067
Rev. 5, 08-Jul-99
96 12238
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TSDF1250/TSDF1250R/TSDF1250W/TSDF1250RW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85067
Rev. 5, 08-Jul-99
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