VISHAY TSAL7300 Technical data
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TSAL7300
Vishay Telefunken
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package
Description
TSAL7300 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear,
plastic packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
D
Extra high radiant power and radiant intensity
D
Low forward voltage
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 22
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 940 nm
°
94 8389
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Document Number 81013
Rev. 1, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
TSAL7300
g
y
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
t x 5sec, 2 mm from case
Thermal Resistance Junction/Ambient R
R
F
FM
FSM
V
amb
stg
T
sd
thJA
j
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100 mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 20 mA TK
F
F
VF
R
j
e
e
f
e
30 45 mW/sr
260 350 mW/sr
f
e
Angle of Half Intensity ϕ ±22 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1 A t
Fall Time IF = 100 mA t
IF = 1 A t
Virtual Source Diameter method: 63% encircled
l
p
Dl
l
p
r
r
f
f
ø 2.1 mm
energy
1.35 1.6 V
2.6 3 V
–1.875 mV/K
25 pF
35 mW
–0.6 %/K
940 nm
50 nm
0.2 nm/K
800 ns
500 ns
800 ns
500 ns
5 V
100 mA
200 mA
1,5 A
210 mW
100
–55...+100
–55...+100
260
350 K/W
10
°
°
°
°
m
C
C
C
C
A
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 1, 20-May-99
Document Number 81013
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