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TSAL7300
Vishay Telefunken
GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package
Description
TSAL7300 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear,
plastic packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
D
Extra high radiant power and radiant intensity
D
Low forward voltage
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 22
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 940 nm
°
94 8389
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Document Number 81013
Rev. 1, 20-May-99
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1 (6)
TSAL7300
g
y
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
t x 5sec, 2 mm from case
Thermal Resistance Junction/Ambient R
R
F
FM
FSM
V
amb
stg
T
sd
thJA
j
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100 mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 20 mA TK
F
F
VF
R
j
e
e
f
e
30 45 mW/sr
260 350 mW/sr
f
e
Angle of Half Intensity ϕ ±22 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1 A t
Fall Time IF = 100 mA t
IF = 1 A t
Virtual Source Diameter method: 63% encircled
l
p
Dl
l
p
r
r
f
f
ø 2.1 mm
energy
1.35 1.6 V
2.6 3 V
–1.875 mV/K
25 pF
35 mW
–0.6 %/K
940 nm
50 nm
0.2 nm/K
800 ns
500 ns
800 ns
500 ns
5 V
100 mA
200 mA
1,5 A
210 mW
100
–55...+100
–55...+100
260
350 K/W
10
°
°
°
°
m
C
C
C
C
A
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Document Number 81013
TSAL7300
Vishay Telefunken
Typical Characteristics (T
= 25_C unless otherwise specified)
amb
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
94 7957 e
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 1. Power Dissipation vs. Ambient Temperature
250
200
150
4
10
3
10
2
10
tp = 100 ms
t
/T = 0.001
p
1
10
F
I – Forward Current ( mA )
0
10
0123
V
13600
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
4
100
R
F
I – Forward Current ( mA )
96 11986
50
0
020406080
T
– Ambient Temperature ( °C )
amb
thJA
100
Figure 2. Forward Current vs. Ambient Temperature
1
10
I
= 1 A ( Single Pulse )
FSM
tp/T=0.01
0.05
0
10
0.1
F
I – Forward Current ( A )
0.5
1.0
–1
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Duration ( ms )96 11987
Figure 3. Pulse Forward Current vs. Pulse Duration
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
1000
100
10
1
e
I – Radiant Intensity ( mW/sr )
0.1
3
10
14327
0
10
1
10
I
– Forward Current ( mA )
F
2
10
Figure 6. Radiant Intensity vs. Forward Current
100
10
4
Document Number 81013
Rev. 1, 20-May-99
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3 (6)
TSAL7300
Vishay Telefunken
1000
100
10
– Radiant Power ( mW )
1
e
F
0.1
0
10
1
10
2
10
3
10
IF – Forward Current ( mA )13602
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 7993 e
– Ambient Temperature ( °C )
amb
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
10
140
1.25
1.0
0.75
0.5
– Relative Radiant Power
e rel
0.25
F
IF = 100 mA
0
4
890 940
14291
l
– Wavelength ( nm )
990
Figure 9. Relative Radiant Power vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 8883
50°
60°
70°
80°
0.6
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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Document Number 81013
4 (6) Rev. 1, 20-May-99
Dimensions in mm
TSAL7300
Vishay Telefunken
96 12126
Document Number 81013
Rev. 1, 20-May-99
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5 (6)
TSAL7300
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.de • FaxBack +1-408-970-5600
6 (6) Rev. 1, 20-May-99
Document Number 81013
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