VISHAY TSAL6100 Technical data
TSAL6100
Vishay Semiconductors
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL6100 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
94 8389
Features
• Extra high radiant power and radiant intensity
• High reliability
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
Applications
Infrared remote control units with high power requirements
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λ
= 940 nm
p
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Forward current I
Peak Forward Current t
Surge Forward Current t
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t ≤ 5 sec, 2 mm from case T
Thermal Resistance Junction/
Ambient
/T = 0.5, tp = 100 µsIFM200 mA
p
= 100 µsI
p
R
F
FSM
amb
stg
sd
thJA
R
V
j
5V
100 mA
1.5 A
210 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
350 K/W
Document Number 81009
Rev. 1.4, 05-Mar-05
www.vishay.com
1
TSAL6100
VISHAY
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward Voltage I
Temp. Coefficient of V
F
Reverse Current V
Junction capacitance V
= 100 mA, tp = 20 ms V
F
I
= 1 A, tp = 100 µsV
F
IF = 100 mA TK
= 5 V I
R
= 0 V, f = 1 MHz, E = 0 C
R
F
F
VF
R
j
1.35 1.6 V
2.6 3 V
- 1.3 mV/K
10 µA
25 pF
Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Radiant Intensity I
Radiant Power I
Temp. Coefficient of φ
e
= 100 mA, tp = 20 ms I
F
I
= 1.0 A, tp = 100 µsIe650 1000 mW/sr
F
= 100 mA, tp = 20 ms φ
F
IF = 20 mA TKφ
e
e
e
Angle of Half Intensity ϕ ± 10 deg
Peak Wavelength I
Spectral Bandwidth I
Temp. Coefficient of λ
p
Rise Time I
Fall Time I
= 100 mA λ
F
= 100 mA ∆λ 50 nm
F
IF = 100 mA TKλ
= 100 mA t
F
= 100 mA t
F
p
p
r
f
Virtual Source Diameter method: 63 %; encircled energy ∅ 3.7 mm
80 130 400 mW/sr
35 mW
- 0.6 %/K
940 nm
0.2 nm/K
800 ns
800 ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
200
150
R
thJA
100
50
V
P - Power Dissipation ( mW )
0
20 40 60 80 1000
T
94 7957
- Ambient Temperature ( °C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
250
200
150
100
R
F
I – Forward Current ( mA)
50
0
020406080
T
96 11986
– Ambient Temperature (°C )
amb
thJA
Figure 2. Forward Current vs. Ambient Temperature
100
www.vishay.com
2
Document Number 81009
Rev. 1.4, 05-Mar-05
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