VISHAY TSAL5300 Technical data

TSAL5300

96 11505

Vishay Semiconductors

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Description

TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages.

Features

• Extra high radiant power and radiant intensity

• Low forward voltage

• Suitable for high pulse current operation

• Standard T-1¾ (∅ 5 mm) package

• Angle of half intensity ϕ = ± 22°

• Peak wavelength λ

= 940 nm

p

e2

Applications

Infrared remote control units with high power requirements

Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors

• High reliability

• Good spectral matching to Si photodetectors

• Lead (Pb)-free component

• Component in accordance to ELV 2000/53/EC, RoHS 2002/95/EC and WEEE 2002/96/EC

Parts Table

Part Ordering Code Remarks

TSAL 5300 TSAL5300 MOQ 4000 pc (Bulk)

TSAL 5300 TSAL5300-FSZ MOQ 5000 pc (1000 pc / Ammopack)

TSAL 5300 TSAL5300-GSZ MOQ 5000 pc (1000 pc / Ammopack)

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Value Unit

Reverse Voltage V

Forward current I

Peak Forward Current t

Surge Forward Current t

Power Dissipation P

Junction Temperature T

Operating Temperature Range T

Storage Temperature Range T

Soldering Temperature t ≤ 5 sec, 2 mm from case T

Thermal Resistance Junction/ Ambient

/T = 0.5, tp = 100 µsIFM200 mA

p

= 100 µsI

p

R

F

FSM

V

j

amb

stg

sd

thJA

5V

100 mA

1.5 A

210 mW

100 °C

- 55 to + 100 °C

260 °C

350 K/W

Document Number 81008

Rev. 1.7, 08-Mar-05

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TSAL5300

VISHAY

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward Voltage I

Temp. Coefficient of V

F

Reverse Current V

Junction capacitance V

= 100 mA, tp = 20 ms V

F

= 1 A, tp = 100 µsV

I

F

IF = 100 mA TK

= 5 V I

R

= 0, f = 1 MHz, E = 0 C

R

F

VF

R

j

1.35 1.6 V

2.6 3 V

- 1.875 mV/K

10 µA

25 pF

Optical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Radiant Intensity I

Radiant Power I

Temp. Coefficient of φ

e

Angle of Half Intensity ϕ ± 22 deg

Peak Wavelength I

Spectral Bandwidth I

Temp. Coefficient of λ

p

Rise Time I

Fall T ime I

Virtual Source Diameter method: 63 % encircled energy ∅ 2.3 mm

= 100 mA, tp = 20 ms I

F

= 1 A, tp = 100 µsI

I

F

= 100 mA, tp = 20 ms φ

F

IF = 20 mA TKφ

= 100 mA λ

F

= 100 mA ∆λ 50 nm

F

IF = 100 mA TKλ

= 100 mA t

F

= 1 A t

I

F

= 100 mA t

F

= 1 A t

I

F

e

p

r

f

30 45 150 mW/sr

260 350 mW/sr

35 mW

- 0.6 %/K

940 nm

0.2 nm/K

800 ns

500 ns

800 ns

500 ns

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

250

200

150

R

thJA

100

50

V

P - Power Dissipation ( mW )

0

20 40 60 80 1000

T

94 7957

- Ambient Temperature ( °C)

amb

Figure 1. Power Dissipation vs. Ambient Temperature

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250

200

150

100

R

F

I – Forward Current ( mA)

50

0

020406080

T

96 11986

– Ambient Temperature (°C )

amb

thJA

Figure 2. Forward Current vs. Ambient Temperature

100

Document Number 81008

Rev. 1.7, 08-Mar-05

VISHAY

TSAL5300

Vishay Semiconductors

1

10

I

=1A(Single Pulse )

FSM

tp/T=0.01

0

0.05

10

0.1

F

I – Forward Current ( A)

0.5

1.0

–1

96 11987

10

–1

–2

10

0

tp– Pulse Duration ( ms )

10

1

10

Figure 3. Pulse Forward Current vs. Pulse Duration

4

10

3

10

2

10

t

1

10

F

I - Forward Current ( mA )

p

tp= 100 s

/T = 0.001

µ

1000

100

10

1

e

I – Radiant Intensity ( mW/sr )

0.1

2

14327

10

0

1

10

I

– Forward Current ( mA )

F

10

2

10

3

10

4

Figure 6. Radiant Intensity vs. Forward Current

1000

100

10

- Radiant Power ( mW )

1

e

Φ

0

13600

10

VF- Forward Voltage(V)

43210

Figure 4. Forward Current vs. Forward Voltage

1.2

1.1

IF=10mA

1.0

0.9

0.8

Frel

V - Relative Forward Voltage

94 7990

0.7

T

- Ambient Temperature ( ° C)

amb

100806040200

Figure 5. Relative Forward Voltage vs. Ambient Temperature

0.1

13602

10

0

10

1

IF- Forward Current ( mA )

10

2

10

3

10

4

Figure 7. Radiant Power vs. Forward Current

1.6

1.2 IF=20mA

Φ

0.8

e rel e rel

I;

0.4

0

-10 10 500 100

T

94 7993

- Ambient Temperature ( ° C)

amb

140

Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature

Document Number 81008

Rev. 1.7, 08-Mar-05

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