VISHAY TSAL4400 Technical data
TSAL4400
Vishay Semiconductors
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL4400 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve about 100 % radiant
power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
94 8488
Features
• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
Applications
Infrared remote control units
Free air transmission systems
Infrared source for optical counters and card readers
• Standard T-1 (∅ 3 mm) package
• Angle of half intensity ϕ = ± 25°
• Peak wavelength λ
= 940 nm
p
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Reverse Voltage V
Forward current I
Peak Forward Current t
Surge Forward Current t
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t ≤ 5 sec, 2 mm from case T
Thermal Resistance Junction/
Ambient
/T = 0.5, tp = 100 µsIFM200 mA
p
= 100 µsI
p
R
F
FSM
amb
stg
sd
thJA
R
V
j
5V
100 mA
1.5 A
210 mW
100 °C
- 55 to + 100 °C
- 55 to + 100 °C
260 °C
350 K/W
Document Number 81006
Rev. 1.5, 08-Mar-05
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TSAL4400
Vishay Semiconductors
Basic Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward Voltage I
Temp. Coefficient of V
F
Reverse Current V
Junction capacitance V
Radiant Intensity I
Radiant Power I
Temp. Coefficient of φ
e
= 100 mA, tp = 20 ms V
F
I
= 1 A, tp = 100 µsV
F
IF = 100 mA TK
= 5 V I
R
= 0 V, f = 1 MHz, E = 0 C
R
= 100 mA, tp = 20 ms I
F
I
= 1.0 A, tp = 100 µsIe135 240 mW/sr
F
= 100 mA, tp = 20 ms φ
F
IF = 20 mA TKφ
F
F
VF
R
j
e
e
e
16 30 80 mW/sr
Angle of Half Intensity ϕ ± 25 deg
Peak Wavelength I
Spectral Bandwidth I
Temp. Coefficient of λ
p
Rise Time I
Fall Time I
= 100 mA λ
F
= 100 mA ∆λ 50 nm
F
IF = 100 mA TKλ
= 100 mA t
F
= 100 mA t
F
p
p
r
f
Virtual Source Diameter method: 63 % encircled energy ∅ 1.9 mm
1.35 1.6 V
2.6 3 V
- 1.3 mV/K
10 µA
25 pF
35 mW
- 0.6 %/K
940 nm
0.2 nm/K
800 ns
800 ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
200
150
R
thJA
100
50
V
P - Power Dissipation ( mW )
0
20 40 60 80 1000
T
94 7957
- Ambient Temperature ( °C)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
250
200
150
100
R
F
I – Forward Current ( mA )
50
0
020406080
T
96 11986
– Ambient Temperature ( °C )
amb
thJA
Figure 2. Forward Current vs. Ambient Temperature
100
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2
Document Number 81006
Rev. 1.5, 08-Mar-05
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