VISHAY TCPT1200 Technical data

TCPT1200

Vishay Semiconductors

Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process

Description

The TCPT1200 is a compact transmissive sensor that includes an infrared emitter and phototransistor detector, located face-to-face on the optical axes in a surface mount package.

Features

• Package type: Surface mount

• Detector type: Phototransistor

• Dimensions: L 5 mm x W 4 mm x H 4 mm

• Gap: 2 mm

• Aperture: 0.3 mm

• Typical output current under test: I

= 0.5 mA

C

• Emitter wavelength: 950 nm

• Lead (Pb)-free soldering released

• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

• Minimum order quantity: 2000 pcs, 2000 pcs/reel

e4

Applications

• Accurate position sensor for encoder

• Detection of motion direction

• Computer mouse and trackballs

Cath

A

Coll

E

19154

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Coupler

Parameter Test condition Symbol Val ue Unit

≤ 25 °C

Power dissipation

Ambient temperature range

Storage temperature range

Soldering temperature in accordance with fig. 13

Input (Emitter)

Parameter Test condition Symbol Val ue Unit

Reverse voltage

Forward current

Pulse forward current

Power dissipation

Output (Detector)

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage

Emitter collector voltage

Collector current

Power dissipation

T

amb

= 0.1 ms; t

t

p

≤ 25 °C P

T

amb

T

≤ 25 °C P

amb

= 0.01 I

p / T

P150mW

V

T

V

amb

stg

sd

R

I

F

FP

V

CEO

ECO

I

C

V

- 40 to + 85 °C

- 40 to + 100 °C

260 °C

5V

25 mA

100 mA

75 mW

70 V

7V

20 mA

75 mW

Document Number 83753

Rev. 1.9, 13-Mar-07

www.vishay.com

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TCPT1200

Vishay Semiconductors

200

Sensor

Emitter/Detector

5025

T

- Ambient Temperature (°C)

amb

100

75

P - Power Dissipation (mW)

16538

150

100

50

0

Figure 1. Power Dissipation Limit vs. Ambient Temperature

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Coupler

Paramete r Test condition Symbol Min Ty p. Max Unit

= 5 V, IF = 15 mA I

Collector current

Collector emitter saturation voltage

Input (Emitter)

Paramete r Test condition Symbol Min Ty p. Max Unit

Forward voltage

Reverse current

Junction capacitance

V

CE

= 15 mA, IC = 0.05 mA V

I

F

= 15 mA V

I

F

= 5 V I

V

R

= 0 V, f = 1 MHz C

V

R

C

CEsat

F

R

j

300 500

1.2 1.5 V

50 pF

µA

0.4 V

10 µA

Output (Detector)

Paramete r Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage

Emitter collector voltage

Collector dark current

Switching Characteristics

Paramete r Test condition Symbol Min Ty p. Max Unit

Rise time I

Fall time I

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2

= 1 mA V

I

C

= 100 µA V

I

E

= 25 V, IF = 0, E = 0 I

V

CE

= 0.3 mA, VCE = 5 V,

C

= 1000 Ω (see figure 3)

R

L

= 0.3 mA, VCE = 5 V,

C

= 1000 Ω (see figure 3)

R

L

CEO

ECO

CEO

t

70 V

7V

10 100 nA

r

f

20.0 150 µs

30.0 150 µs

Document Number 83753

Rev. 1.9, 13-Mar-07

I

1000

C

S

1.3

(

)

I

F

0

F

+ 5 V

I

C

R G = 50 Ω t

p

= 20

T

t p = 1 ms

Channel I

Channel II

50 Ω 1000 Ω

16536

Figure 2. Test Circuit for tr and t

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

adjusted by I

Oscilloscope

RL 1 M C

f

TCPT1200

Vishay Semiconductors

I

F

0

I

F

20 pF

L

100 %

t

p

t

d

t

r

(= t + t )

t

on

96 11698

90 %

10 %

d

C

0

r

t

p

t

r

t

d

t

on

pulse duration delay time rise time turn-on time

t

f

t

s

t

off

t

s

t

f

t

(= ts+tf)turn-off time

off

Figure 3. Switching Times

t

storage time fall time

100

10

urrent (mA)

1

F

I - Forward

13660

0.1 0

0.2

0.60.4

0.8 2.0

1.0

V

- Forward Voltage (V)

F

1.2

1.4

1.6

1.8

Figure 4. Forward Current vs. Forward Voltage

0.18 I F = 15 mA

0.16 I

= 50 µA

C

0.14

0.12

0.10

aturation Voltage (V)

0.08

0.06

0.04

oll. Emitter

0.02

0

CEsat

- 40

V -

13662

- Ambient Temperature (°C)

T

amb

40

200- 20

60

100

80

Figure 5. Collector Emitter Saturation Voltage vs.

Ambient Temperature

10

V CE= 5 V

1

0.1

0.01

C

I - Collector Current (mA)

0.001

13665

0.1

1

I

- Forward Current (mA)

F

10

100

Figure 6. Collector Current vs. Forward Current

I F = 15 mA

1.2

V

1.1

1.0

F

0.9

V - Forward Voltage

13661

0.8

- 40

- 20

T

amb

20

0

40

- Ambient Temperature (°C)

60

100

80

Figure 7. Forward Voltage vs. Ambient Temperature

Document Number 83753

Rev. 1.9, 13-Mar-07

www.vishay.com

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