Datasheet TCNT1000 Datasheet (Telefunken)

Page 1
Vishay Telefunken
Subminiature Reflective Optical Sensor with Phototransistor Output
Description
Applications
D
Accurate position sensor for shaft encoder
D
Detection of reflective material such as paper, IBM cards, magnetic tapes etc.
D
Suitable for copy machines, printers, fax machines
TCNT1000
15143
A
Features
D
Package height: 1.5 mm
D
Parts shipped taped and reeled 1000 pcs/ reel
D
Soldering method according to CECC00802 table 1, class B or C
D
Surface Mountable Technology (SMD)
Cath
Top view
Order Instruction
Ordering Code Sensing Distance Remarks
TCNT1000 1 mm
E
15142
Coll
Rev. A2, 25–Jul–00
www.vishay.comDocument Number 83778
1 (8)
Page 2
TCNT1000
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit Reverse voltage V Forward current I Pulse forward current tp = 0.1 ms; t Power dissipation T
≤ 25°C P
amb
Output (Detector)
Parameter Test Conditions Symbol Value Unit Collector emitter voltage V Emitter collector voltage V Collector current I Power dissipation T
≤ 25°C P
amb
Coupler
Parameter Test Conditions Symbol Value Unit Ambient temperature range T Storage temperature range T Soldering temperature t ≤ 5 s Tsd
1)
1.6 mm distance from Body
= 0.01 I
p / T
R
F
FP
V
CEO ECO
C
V
amb
stg
5 V
50 mA
1 A
75 mW
30 V
5 V
50 mA
100 mW
–20 to +70 –30 to +80
1)
260
°
C
°
C
°
C
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Document Number 83778
Page 3
TCNT1000
Vishay Telefunken
Electrical Characteristics (T
= 25°C)
amb
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 20 mA V Reverse current VR = 5 V I
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 1 mA V Emitter collector voltage IE = 100 mA V Collector emitter cut-off
VCE = 20 V, IF = 0, E = 0 I
current Cross talk current VCE = 5 V, IF =10 mA
(see Figure 1)
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector current VCE = 5 V, IF = 10 mA I Rise time VS = 2 V, IC = 1 mA,
R
= 1 k
W
L
Fall time VS = 2 V, IC = 1 mA,
R
= 1 k
W
1)
Working distance to object: d = 1 mm; object: Flat mirror
L
CEO ECO
CEO
ICX
C
F
R
1.2 1.6 V 10
m
A
30 V
5 V
100 nA
1)
1)
t
r
t
f
100
20
20
200 nA
m
m
m
A
s
s
Rev. A2, 25–Jul–00
Object: Flat Mirror
d = working distance 1 mm
15190
Figure 1. Test circuit
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Page 4
TCNT1000
Vishay Telefunken
Typical Characteristics (T
100
80
60
40
F
20
I – Forward Current ( mA )
0
–25 0 25 50 75 100
T
– Ambient Temperature ( °C )15213
amb
= 25_C, unless otherwise specified)
amb
Figure 2. Forward Current vs. Ambient Temperature
100.0
10.0
160
VCE=5 V
140
E = 1 mW / cm
120 100
80 60 40
rel
20
0
CTR – Relative Current Transfer Ratio (%)
0 10203040506070
T
amb
2
– Ambient Temperature ( °C )15216
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
1000.0 VCE=20 V
100.0
1.0
F
I – Forward Current ( mA )
0.1 0 0.5 1.0 1.5 2.0 2.5 3.0
VF – Forward Voltage ( V )15214
Figure 3. Forward Current vs. Forward Voltage
125
100
75
50
25
V
P – Power Dissipation ( mW )
0
–25 0 25 50 75 100
T
– Ambient Temperature ( °C )15215
amb
10.0
with open Base ( nA )
1.0
CEO
I – Collector Dark Current,
0.1 0 255075100
T
– Ambient Temperature ( °C )15217
amb
Figure 6. Collector Dark Current vs. Ambient Temperature
100
90 80 70 60 50 40 30 20
Crel
I – Relative Collector Current
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
d – Distance ( mm )15218
IF=20mA V
=5V
CE
T
=25°C
amb
Figure 4. Power Dissipation vs. Ambient Temperature
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Figure 7. Relative Collector vs. Distance
Document Number 83778
Page 5
TCNT1000
Vishay Telefunken
1000.0
m
t – Response time ( s)
VCE = 2 V I
= 100 mA
C
T
= 25°C
100.0
10.0
amb
t
d
1.0
0.1
0.1 1.0 10.0 100.0 RL – Load Resistance ( kΩ )15220
t
r
t
f
t
s
Figure 8. Response Time vs. Load Resistance
120
100
80
60
40
VCE = 5 V I
= 20 mA
F
d= 1 mm T
= 25°C
amb
White Black
1 mmd
20
Crel
I – Relative Collector Current
0
–2 –101234567
s – Displacement ( mm )15219
Figure 9. Relative Collector Current vs. Displacement
Rev. A2, 25–Jul–00
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5 (8)
Page 6
TCNT1000
Vishay Telefunken
Dimensions of TCNT1000 in mm
15191
www.vishay.com 6 (8) Rev. A2, 25–Jul–00
Document Number 83778
Page 7
Dimensions of Shape in mm
TCNT1000
Vishay Telefunken
Rev. A2, 25–Jul–00
15211
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Page 8
TCNT1000
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 83778
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