Vishay Si2315BDS Schematic [ru]

P-Channel 1.8-V (G-S) MOSFET

Si2315BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 12

DS(on)

0.050 at V

0.065 at V

0.100 at V

GS

GS

GS

(Ω)I

= - 4.5 V

= - 2.5 V

= - 1.8V

(A)

D

- 3.85

- 3.4

- 2.7

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFETs: 1.8 V Rated

RoHS*

COMPLIANT

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2315BDS *(M5)

* Marking Code

Ordering Information: Si2315BDS-T1
Si2315BDS-T1-E3 (Lead (Pb)-free)
Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Continuous Source Current (Diode Conduction)

Power Dissipation

a

a

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 3.85 - 3.0

- 3.0 - 2.45

- 1.0 - 0.62

1.19 0.75

0.76 0.48

- 12

± 8

- 12

W

- 55 to 150 °C

V

A

Pb-free

Available

THERMAL RESISTANCE RATINGS

Parameter Symbol Typ. Max. Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

t ≤ 5 s

Steady State 130 166

R

thJA

R

thJF

Notes:
a. Surface Mounted on FR4 board.
b. t ≤ 5 s.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72014
S-80642-Rev. E, 24-Mar-08

85 105

°C/W

60 75

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1

Si2315BDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

a

a

a

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

b

Tur n -O n Ti m e

Turn-Off Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

Q

Q

C

C

C

t

d(on)

t

d(off)

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

V

DS

g

VDS = - 6 V, V

= 0 V, ID = - 10 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 12 V, V

DS

= - 12 V, V

V

DS

V

DS

V

GS

V

GS

V

GS

GS

≤ - 5 V, V

≤ - 5 V, V

= - 4.5 V, ID = - 3.85 A

= - 2.5 V, ID = - 3.4 A

= - 1.8 V, ID = - 2.7 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

= - 2.5 V

GS

VDS = - 5 V, ID = - 3.85 A

IS = - 1.6 A, V

V

= - 6 V, V

DS

I

D

V

= - 6 V, RL = 6 Ω

DD

≅ - 1.0 A, V

I

D

R

≅ - 3.85 A

G

= 0 V

GS

= - 4.5 V

GS

= 0 V, f = 1 MHz

GS

= - 4.5 V

GEN

= 6 Ω

Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.

Min. Typ. Max.

- 12

- 0.45 - 0.90

± 100 nA

- 6

- 3

Limits

Unit

V

- 1

- 10

µA

A

0.040 0.050

0.050 0.065

Ω

0.071 0.100

7S

- 1.2 V

815

1.1

nCGate-Source Charge

2.3

715

275

pFOutput Capacitance

200

15 20

35 50

50 70

ns

50 75

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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Document Number: 72014

S-80642-Rev. E, 24-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2315BDS

Vishay Siliconix

12

10

8

6

4

- Drain Current (A)I

D

2

0

0123456

VGS = 4.5 thru 2 V

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.30

0.25

0.20

0.15

1.5 V

12

10

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5

TC = 125 °C

25 °C

V

- Gate-to-Source Voltage (V)

GS

- 55 °C

Transfer Characteristics

1200

1000

C

800

600

iss

- On-Resistance (Ω)R

0.10

DS(on)

0.05

0.00

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

024681012

ID - Drain Current (A)

On-Resistance vs. Drain Current

5

VDS = 6 V
I

= 3.5 A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

0246810

Qg - Total Gate Charge (nC)

Gate Charge

400

C - Capacitance (pF)

C

200

0

rss

024681012

VDS - Drain-to-Source Voltage (V)

C

oss

Capacitance

1.6

VGS = 4.5 V
I

= 3.5 A

D

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

- On-Resistance R

DS(on)

(Normalized)

1.4

1.2

1.0

0.8

0.6

On-Resistance vs. Junction Temperature

Document Number: 72014
S-80642-Rev. E, 24-Mar-08

www.vishay.com

3

Si2315BDS

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

20

10

TJ = 150 °C

- Source Current (A)I

S

1

0.0 0.2 0.4 0.6 0.8

- Source-to-Drain Voltage (V)

V

SD

Source-Drain Diode Forward Voltage

0.6

ID = 250 µA

Variance (V)V

GS(th)

0.4

0.2

0.0

- 0.2

- 0.4

TJ = 25 °C

1.0 1.2

- On-Resistance (Ω)R

DS(on)

Power (W)

0.4

0.3

0.2

ID = 3.5 A

0.1

0.0
012345

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

12

10

8

6

4

TA = 25 °C

2

- 0.6

- 50 - 25 0 25 50 75 100 125 150

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TJ - Temperature (°C)

Threshold Voltage

- Drain Current (A)I

D

0

0.01

100

Limited

by R

DS(on)*

10

1

0.1

0.01

0.1 1 10 100

* V

GS

TA = 25 °C

Single Pulse

VDS - Drain-to-Source Voltage (V)

minimum VGS at which R

DS(on)

1 ms, 100 µs
10 ms

100 ms

1 s

10 s

DC, 100 s

is specified

Safe Operating Area

1

10 6000.1

Time (s)

Single Pulse Power

Document Number: 72014

S-80642-Rev. E, 24-Mar-08

100

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

Si2315BDS

Vishay Siliconix

0.1

Thermal Impedance

Normalized Effective Transient

0.01

0.2

0.1

0.05

0.02

Notes:

P

DM

t

1

t

- TA = PDMZ

JM

2

1. Duty Cycle, D =

2. Per Unit Base = R

3. T

4. Surface Mounted

thJA

thJA

t

1

t

2

= 130 °C/W

(t)

Single Pulse

-4

10

-3

10

-2

10

-1

1 10 60010

100

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72014.

Document Number: 72014

www.vishay.com

S-80642-Rev. E, 24-Mar-08

5

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1