Vishay Si2315BDS Schematic

P-Channel 1.8-V (G-S) MOSFET

Si2315BDS

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) R

- 12

DS(on)

0.050 at V

0.065 at V

0.100 at V

GS

(Ω)I

= - 4.5 V

= - 2.5 V

= - 1.8V

(A)

D

- 3.85

- 3.4

- 2.7

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFETs: 1.8 V Rated

RoHS*

COMPLIANT

TO-236

(SOT-23)

G

1

D

3

S

2

Top View

Si2315BDS *(M5)

* Marking Code

Ordering Information: Si2315BDS-T1 Si2315BDS-T1-E3 (Lead (Pb)-free) Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Continuous Source Current (Diode Conduction)

Power Dissipation

a

Operating Junction and Storage Temperature Range

TA = 25 °C

T

= 70 °C

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

T

, T

J

stg

- 3.85 - 3.0

- 3.0 - 2.45

- 1.0 - 0.62

1.19 0.75

0.76 0.48

- 12

± 8

- 12

W

- 55 to 150 °C

V

A

Pb-free

Available

THERMAL RESISTANCE RATINGS

Parameter Symbol Typ. Max. Unit

Maximum Junction-to-Ambient

a

Maximum Junction-to-Foot (Drain) Steady State

t ≤ 5 s

Steady State 130 166

R

thJA

R

thJF

Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72014 S-80642-Rev. E, 24-Mar-08

85 105

°C/W

60 75

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1

Si2315BDS

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Static

V

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Input Capacitance

Reverse Transfer Capacitance

Switching

b

Tur n -O n Ti m e

Turn-Off Time

V

(BR)DSS

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

V

Q

C

t

d(on)

t

d(off)

fs

SD

gs

gd

iss

oss

rss

t

r

t

f

V

DS

g

VDS = - 6 V, V

= 0 V, ID = - 10 µA

GS

V

= VGS, ID = - 250 µA

DS

VDS = 0 V, VGS = ± 8 V

V

= - 12 V, V

DS

= - 12 V, V

V

DS

V

DS

V

GS

V

GS

V

GS

≤ - 5 V, V

= - 4.5 V, ID = - 3.85 A

= - 2.5 V, ID = - 3.4 A

= - 1.8 V, ID = - 2.7 A

= 0 V

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

= - 2.5 V

GS

VDS = - 5 V, ID = - 3.85 A

IS = - 1.6 A, V

V

= - 6 V, V

DS

I

D

V

= - 6 V, RL = 6 Ω

DD

≅ - 1.0 A, V

I

D

R

≅ - 3.85 A

G

= 0 V

GS

= - 4.5 V

GS

= 0 V, f = 1 MHz

GS

= - 4.5 V

GEN

= 6 Ω

Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. c. Switching time is essentially independent of operating temperature.

Min. Typ. Max.

- 12

- 0.45 - 0.90

± 100 nA

- 6

- 3

Limits

Unit

V

- 1

- 10

µA

A

0.040 0.050

0.050 0.065

Ω

0.071 0.100

7S

- 1.2 V

815

1.1

nCGate-Source Charge

2.3

715

275

pFOutput Capacitance

200

15 20

35 50

50 70

ns

50 75

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 72014

S-80642-Rev. E, 24-Mar-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Si2315BDS

Vishay Siliconix

12

10

8

6

4

- Drain Current (A)I

D

2

0

0123456

VGS = 4.5 thru 2 V

V

- Drain-to-Source Voltage (V)

DS

Output Characteristics

0.30

0.25

0.20

0.15

1.5 V

12

10

8

6

4

- Drain Current (A)I

D

2

0

0.0 0.5 1.0 1.5 2.0 2.5

TC = 125 °C

25 °C

V

- Gate-to-Source Voltage (V)

GS

- 55 °C

Transfer Characteristics

1200

1000

C

800

600

iss

- On-Resistance (Ω)R

0.10

DS(on)

0.05

0.00

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

024681012

ID - Drain Current (A)

On-Resistance vs. Drain Current

5

VDS = 6 V I

= 3.5 A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

1

V

0

0246810

Qg - Total Gate Charge (nC)

Gate Charge

400

C - Capacitance (pF)

C

200

0

rss

024681012

VDS - Drain-to-Source Voltage (V)

C

oss

Capacitance

1.6

VGS = 4.5 V I

= 3.5 A

D

- 50 - 25 0 25 50 75 100 125 150

- Junction Temperature (°C)

T

J

- On-Resistance R

DS(on)

(Normalized)

1.4

1.2

1.0

0.8

0.6

On-Resistance vs. Junction Temperature

Document Number: 72014 S-80642-Rev. E, 24-Mar-08

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Vishay Si2315BDS Schematic [ru]