Vishay SI1917EDH Schematic [ru]
Si1917EDH
C/W
PRODUCT SUMMARY
V
(V) r
DS
–12
SC-70 (6-LEADS)
1
S
1
2
G
1
3
D
2
SOT-363
DS(on)
0.370 @ VGS = –4.5 V
0.575 @ VGS = –2.5 V –0.92
0.800 @ VGS = –1.8 V –0.78
6
D
5
G
S
4
New Product
Dual P-Channel 12-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
(W) I
1
Marking Code
2
2
DB XX
YY
Lot Traceability
and Date Code
Part # Code
(A)
D
–1.15
3 kW
G
D ESD Protected: 3000 V
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
D
G
Vishay Siliconix
D
3 kW
Top View
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 5 secs Steady State Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
a
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
_
a
a
TA = 25_C
TA = 85_C
TA = 25_C 0.73 0.57
TA = 85_C
P
I
DM
I
DS
GS
D
S
D
stg
–1.15
–0.83 –0.73
–0.61 –0.47
0.38 0.30
–12
"12
–3
–55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain) Steady State R
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
a
t v 5 sec 130 170
Steady State
R
thJA
thJF
170 220
80 100
S
V
–1.00
A
W
_C/W
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
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1
Si1917EDH
W
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol T est Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
a
a
a
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
DS(on)
g
V
fs
SD
VDS = VGS, I
= –100 mA –0.45 V
D
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "12 V
VDS = –9.6 V, VGS = 0 V –1
VDS = –9.6 V, VGS = 0 V, TJ = 85_C –5
VDS = –5 V, VGS = –4.5 V –2 A
VGS = –4.5 V, ID = –1.0 A 0.300 0.370
VGS = –2.5 V, I
VGS = –1.8 V, I
= –0.81 A
D
= –0.2 A
D
VDS = –10 V, ID = –1.0 A 1.7 S
IS = –0.47 A, VGS = 0 V –0.85 –1.2 V
"1.5 mA
"10 mA
0.470 0.575
0.660 0.800
mA
W
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
d(on)
d(off)
g
V
gs
gd
r
f
= –6 V, VGS = –4.5 V, ID = –1.0 A 0.31 nC
DS
VDD = –6 V, RL = 12 W
VDD = –6 V, RL = 12
ID ^ –0.5 A, V
GEN
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
10
8
6
4
– Gate Current (mA)I
GSS
2
= –4.5 V, RG = 6 W
10,000
1,000
100
mA)
10
1
– Gate Current (I
0.1
GSS
0.01
1.3 2.0
0.31
0.17 0.26
0.47 0.71
0.96 1.4
1.0 1.5
Gate Current vs. Gate-Source V oltage
TJ = 150_C
TJ = 25_C
ms
0
0 4 8 12 16
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2
VGS – Gate-to-Source Voltage (V)
0.001
0 3 9 12 15
6
– Gate-to-Source Voltage (V)
V
GS
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
Si1917EDH
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3.0
2.5
2.0
1.5
1.0
– Drain Current (A)I
D
0.5
0.0
01234
1.2
Output Characteristics Transfer Characteristics
VGS = 5 thru 3 V
2.5 V
2 V
1.5 V
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Vishay Siliconix
3.0
TC = –55_C
2.5
2.0
1.5
1.0
– Drain Current (A)I
D
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS – Gate-to-Source Voltage (V)
200
25_C
Capacitance
125_C
W )
0.9
0.6
– On-Resistance (r
0.3
DS(on)
0.0
– Gate-to-Source Voltage (V)
GS
V
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID – Drain Current (A)
Gate Charge
5
VDS = 6 V
I
= –1.0 A
D
4
3
2
1
160
120
80
C – Capacitance (pF)
40
0
024681012
1.6
1.4
W)
1.2
(Normalized)
1.0
– On-Resistance (r
DS(on)
0.8
C
iss
C
oss
C
rss
V
– Drain-to-Source Voltage (V)
DS
On-Resistance vs. Junction Temperature
VGS = 4.5 V
I
= –1.0 A
D
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Document Number: 71414
S-03174—Rev. A, 07-Mar-01
Qg – Total Gate Charge (nC)
0.6
–50 –25 0 25 50 75 100 125 150
T
– Junction Temperature (_C)
J
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