Datasheet SI1917EDH Datasheet (Vishay) [ru]

Si1917EDH

C/W

PRODUCT SUMMARY

V

(V) r

DS

–12

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

SOT-363

DS(on)

0.370 @ VGS = –4.5 V

0.575 @ VGS = –2.5 V –0.92

0.800 @ VGS = –1.8 V –0.78

6

D

5

G

S

4

New Product

Dual P-Channel 12-V (D-S) MOSFET

FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated

(W) I

1

Marking Code

2

2

DB XX

YY

Lot Traceability
and Date Code

Part # Code

(A)

D

–1.15

3 kW

G

D ESD Protected: 3000 V
D Thermally Enhanced SC-70 Package

APPLICATIONS

D Load Switching
D PA Switch
D Level Switch

D

G

Vishay Siliconix

D

3 kW

Top View

S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

a

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current I
Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C
TA = 85_C

TA = 25_C 0.73 0.57
TA = 85_C

P

I

DM

I

DS

GS

D

S

D

stg

–1.15
–0.83 –0.73

–0.61 –0.47

0.38 0.30

–12

"12

–3

–55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec 130 170

Steady State

R

thJA

thJF

170 220

80 100

S

V

–1.00

A

W

_C/W

Document Number: 71414
S-03174—Rev. A, 07-Mar-01

www.vishay.com

1

Si1917EDH

W

Vishay Siliconix

New Product

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol T est Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance
Diode Forward Voltage

Dynamic

b

a

a

a

a

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

DS(on)

g

V

fs

SD

VDS = VGS, I

= –100 mA –0.45 V

D

VDS = 0 V, VGS = "4.5 V

VDS = 0 V, VGS = "12 V

VDS = –9.6 V, VGS = 0 V –1

VDS = –9.6 V, VGS = 0 V, TJ = 85_C –5

VDS = –5 V, VGS = –4.5 V –2 A
VGS = –4.5 V, ID = –1.0 A 0.300 0.370

VGS = –2.5 V, I

VGS = –1.8 V, I

= –0.81 A

D

= –0.2 A

D

VDS = –10 V, ID = –1.0 A 1.7 S

IS = –0.47 A, VGS = 0 V –0.85 –1.2 V

"1.5 mA

"10 mA

0.470 0.575

0.660 0.800

mA

W

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

d(on)

d(off)

g

V

gs
gd

r

f

= –6 V, VGS = –4.5 V, ID = –1.0 A 0.31 nC

DS

VDD = –6 V, RL = 12 W

VDD = –6 V, RL = 12

ID ^ –0.5 A, V

GEN

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Gate-Current vs. Gate-Source Voltage

10

8

6

4

– Gate Current (mA)I

GSS

2

= –4.5 V, RG = 6 W

10,000

1,000

100

mA)

10

1

– Gate Current (I

0.1

GSS

0.01

1.3 2.0

0.31

0.17 0.26

0.47 0.71

0.96 1.4

1.0 1.5

Gate Current vs. Gate-Source V oltage

TJ = 150_C

TJ = 25_C

ms

0

0 4 8 12 16

www.vishay.com

2

VGS – Gate-to-Source Voltage (V)

0.001
0 3 9 12 15

6

– Gate-to-Source Voltage (V)

V

GS

Document Number: 71414

S-03174—Rev. A, 07-Mar-01

Si1917EDH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

3.0

2.5

2.0

1.5

1.0

– Drain Current (A)I

D

0.5

0.0
01234

1.2

Output Characteristics Transfer Characteristics

VGS = 5 thru 3 V

2.5 V

2 V

1.5 V

VDS – Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Vishay Siliconix

3.0
TC = –55_C

2.5

2.0

1.5

1.0

– Drain Current (A)I

D

0.5

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS – Gate-to-Source Voltage (V)

200

25_C

Capacitance

125_C

W )

0.9

0.6

– On-Resistance (r

0.3

DS(on)

0.0

– Gate-to-Source Voltage (V)

GS

V

VGS = 1.8 V

VGS = 2.5 V

VGS = 4.5 V

0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID – Drain Current (A)

Gate Charge

5

VDS = 6 V
I

= –1.0 A

D

4

3

2

1

160

120

80

C – Capacitance (pF)

40

0

024681012

1.6

1.4

W)

1.2

(Normalized)

1.0

– On-Resistance (r

DS(on)

0.8

C

iss

C

oss

C

rss

V

– Drain-to-Source Voltage (V)

DS

On-Resistance vs. Junction Temperature

VGS = 4.5 V
I

= –1.0 A

D

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Document Number: 71414
S-03174—Rev. A, 07-Mar-01

Qg – Total Gate Charge (nC)

0.6
–50 –25 0 25 50 75 100 125 150

T

– Junction Temperature (_C)

J

www.vishay.com

3

Si1917EDH

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

3

TJ = 150_C

1

– Source Current (A)I

S

0.1
0 0.2 0.6 0.8

0.4

VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)

Threshold Voltage

0.3

TJ = 25_C

1.0 1.2

W )

– On-Resistance (r

DS(on)

2.0

1.6

1.2
ID = –1.0 A

0.8

0.4

0.0

012345

Single Pulse Power, Junction-to-Ambient

5

0.2

0.1

Variance (V)V

0.0

GS(th)

–0.1

–0.2

–50 –25 0 25 50 75 100 125 150

2

1

0.1

Thermal Impedance

Normalized Effective Transient

0.01
10

Duty Cycle = 0.5

0.2

0.1

0.05

Single Pulse

–4

ID = 100 mA

TJ – Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.02

–3

10

4

3

Power (W)

2

1

0

1 600100.10.01

100

Time (sec)

Notes:

P

DM

t

1

t

2

t

thJA

t

thJA

100

1
2

(t)

= 170_C/W

1. Duty Cycle, D =

2. Per Unit Base = R

3. TJM – TA = PDMZ

4. Surface Mounted

–2

10

–1

1 10 60010

Square Wave Pulse Duration (sec)

www.vishay.com

4

Document Number: 71414

S-03174—Rev. A, 07-Mar-01

Si1917EDH

New Product

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Normalized Thermal Transient Impedance, Junction-to-Foot

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.01

–4

10

0.05

Single Pulse

0.02

–3

10

–2

10

Square Wave Pulse Duration (sec)

Thermal Impedance

Normalized Effective Transient

Vishay Siliconix

–1

11010

Document Number: 71414
S-03174—Rev. A, 07-Mar-01

www.vishay.com

5

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1