Vishay SI1903DL Schematic [ru]

Dual P-Channel 2.5-V (G-S) MOSFET

Conti

t (TJ = 150_C)

a

I

A

C/W

Si1903DL

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

DS

−20

DS(on)

0.995 @ VGS = −4.5 V

1.190 @ VGS = −3.6 V "0.40

1.80 @ VGS = −2.5 V "0.32

Ordering Information: Si1903DL-T1

(W) I

SOT-363

SC-70 (6-LEADS)

1

S

1

2

G

1

3

D

2

Top View

Si1903DL-T1—E3 (Lead (Pb)-Free)

(A)

D

"0.44

6

5

4

FEATURES

D TrenchFETr Power MOSFET
D 2.5-V Rated
D Lead (Pb)-Free Version is RoHS

Compliant

D

1

G

2

S

2

Marking Code

QA XX

Part # Code

YY

Lot Traceability
and Date Code

Available

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol 5 secs Steady State Unit

Drain-Source Voltage V

Gate-Source Voltage V

a

=

nuous Drain Curren

Pulsed Drain Current I

Continuous Diode Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction and Storage Temperature Range TJ, T

_

a

a

TA = 25_C

TA = 85_C

TA = 25_C

TA = 85_C

P

DM

I

DS

GS

D

S

D

stg

"0.44

"0.31 "0.30

−0.25 −0.23

0.30 0.27

0.16 0.14

−20

"12

"1.0

−55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

Maximum Junction-to-Foot (Drain) Steady State R

Notes
a. Surface Mounted on 1” x 1” FR4 Board.

a

t v 5 sec

Steady State

R

thJA

thJF

360 415

400 460

300 350

V

"0.41

W

_C/W

Document Number: 71081
S-50694—Rev. C, 18-Apr-05

www.vishay.com

1

Si1903DL

DS(on)

VDD = −10 V, RL = 20 W

Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

a

GS(th)

GSS

DSS

I

D(on)

VDS = VGS, I

= −250 mA −0.6 −1.5 V

D

VDS = 0 V, VGS = "12 V "100 nA

VDS = −20 V, VGS = 0 V −1

VDS = −20 V, VGS = 0 V, TJ = 85_C −5

VDS = −5 V, VGS = −4.5 V −1.0 A

mA

VGS = −4.5 V, ID = −0.41 A 0.850 0.995

Drain-Source On-State Resistance

a

r

DS(on)

VGS = −3.6 V, ID = −0.38 A 1.0 1.190

W

VGS = −2.5 V, ID = −0.25 A 1.4 1.80

Forward Transconductance

Diode Forward Voltage

Dynamic

b

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Source-Drain Reverse Recovery Time t

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.

a

a

g

V

SD

d(on)

d(off)

rr

fs

VDS = −10 V, ID = −0.41 A

0.8 S

IS = −0.23 A, VGS = 0 V −0.8 −1.2 V

g

V

gs

gd

= −10 V, VGS = −4.5 V, ID = −0.41 A 0.45 nC

DS

1.2 1.8

0.25

7.5 15

r

f

VDD = −10 V, RL = 20 W

ID ^ −0.5 A, V

= −4.5 V, Rg = 6 W

GEN

20 40

8.5 17

12 24

ns

IF = −0.23 A, di/dt = 100 A/ms 25 40

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

www.vishay.com

2

1.0

Output Characteristics Transfer Characteristics

VGS = 5 thru 3 V

0.8

0.6

0.4

− Drain Current (A)I

D

0.2

1 V

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS − Drain-to-Source Voltage (V)

2.5 V

1.5 V

2 V

1.0

TC = −55_C

0.8
25_C

0.6

0.4

− Drain Current (A)I

D

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS − Gate-to-Source Voltage (V)

Document Number: 71081

S-50694—Rev. C, 18-Apr-05

125_C