Load Switch with Level-Shift
Si1869DH
Vishay Siliconix
PRODUCT SUMMARY
V
(V) r
DS2
1.8 to 20
0.165 at V
0.222 at V
0.303 at V
(Ω)I
DS(on)
= 4.5 V
IN
= 2.5 V
IN
= 1.8 V
IN
(A)
D
± 1.2
± 1.0
± 0.7
DESCRIPTION
The Si1869DH includes a P- and N-Channel MOSFET in a
single SC70-6 package. The low on-resistance P-Channel
TrenchFET is tailored for use as a load switch. The N-Channel, with an external resistor, can be used as a level-shift to
APPLICATION CIRCUITS
Si1869DH
V
IN
R1
4
Q2
6
2, 3
6
C1
V
OUT
FEATURES
• TrenchFET® Power MOSFETS: 1.8 V Rated
• ESD Protected: 2000 V On Input Switch,
V
ON/OFF
• 165 mΩ Low r
DS(on)
RoHS
COMPLIANT
• 1.8 to 20 V Input
• 1.5 to 8 V Logic Level Control
• Low Profile, Small Footprint SC70-6 Package
• Adjustable Slew-Rate
APPLICATIONS
• Level Shift for Portable Devices
drive the P-Channel load-switch. The N-Channel MOSFET
has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1869DH operates on supply lines
from 1.8 to 20 V, and can drive loads up to 1.2 A.
40
t
35
IL = 1 A
30
25
(Time µS)
20
V
ON/OFF
C
= 10 µF
i
= 1 µF
C
o
= 3 V
f
ON/OFF
R2
C
i
5
Q1
1
R2
C
o
LOAD
GND
COMPONENTS
R1 Pull-Up Resistor Typical 10 kΩ to 1 MegaΩ*
R2 Optional Slew-Rate Control Typical 0 to 100 kΩ*
C1 Optional Slew-Rate Control Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 73449
S-61965-Rev. B, 09-Oct-06
t
15
d(off)
10
5
0
t
r
02468 10
R2 (kΩ)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
t
d(on)
Switching Variation
R2 at V
= 2.5 V, R1 = 20 kΩ
IN
The Si1869DH is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
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Si1869DH
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
SC70-6
Top View
R2
D2
D2
Ordering Information: Si1869DH-T1-E3 (Lead (Pb)-free)
1
2
3
6
5
4
R1, C1
ON/OFF
S2
Marking Code
VC XX
YY
Lot Traceability
and Date Code
Part # Code
S2
ON/OFF
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage (D2-S2)
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode Conduction
Maximum Power Dissipation
a
Continuous
Pulsed
a
a, b
b, c
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω)ESD2kV
V
V
V
ON/OFF
P
, T
T
J
DS
IN
I
L
I
S
D
stg
Si1869DH
4
5
R2
2, 3
Q2
Q1
1
D2
6
R1,
C1
- 20
20
VInput Voltage
8
± 1.2
± 3
A
- 0.4
1.0
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient (continuous current)
Maximum Junction-to-Foot (Q2)
a
R
thJA
R
thJF
100 125
44 55
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
FL
V
SD
VIN = 8 V, V
IS = - 0.4 A
ON Characteristics
Input Voltage Range
Drain to Source Breakdown Voltage
(P-Channel)
On-Resistance (P-Channel) at 1 A
On-State (P-Channel) Drain-Current
V
V
r
DS(on)
I
D(on)
DS
IN
VGS = 0 V, ID = - 250 µA
V
= 1.5 V, VIN = 4.5 V, ID = 1.2 A
ON/OFF
V
= 1.5 V, VIN = 2.5 V, ID = 1.0 A
ON/OFF
V
= 1.5 V, VIN = 1.8 V, ID = 0.7 A
ON/OFF
V
≤ 0.2 V, VIN = 5 V, V
IN-OUT
V
≤ 0.3 V, VIN = 3 V, V
IN-OUT
Notes:
a. Surface Mounted on FR4 Board.
b. V
= 20 V, V
IN
= 8 V, TA = 25 °C.
ON/OFF
c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ON/OFF
= 0 V
ON/OFF
ON/OFF
= 1.5 V
= 1.5 V
1 µA
0.4 0.6 1.1 V
1.8 20
- 20
0.132 0.165
0.177 0.222
0.242 0.303
1
1
V
Ω
A
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Document Number: 73449
S-61965-Rev. B, 09-Oct-06
TYPICAL CHARACTERISTICS 25 °C, unless noted
Si1869DH
Vishay Siliconix
0.6
V
= 1.5 to 8 V
ON/OFF
0.5
0.4
(V)V
0.3
DROP
0.2
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.6
V
ON/OFF
0.5
0.4
(V)V
0.
3
DROP
0.2
TJ = 125 °C
V
vs. IL at VIN = 4.5 V
DROP
= 1.5 to 8 V
TJ = 125 °C
IL - (A)
TJ = 25 °C
TJ = 25 °C
0.6
V
= 1.5 to 8 V
ON/OFF
0.5
0.4
(V)V
0.3
DROP
0.2
0.1
0.0
0.0 0.5 1.0 1.5 2.0 2.5
0.5
0.4
0.
3
(V)V
DROP
0.2
TJ = 125 °C
I
V
vs. IL at VIN = 2.5 V
DROP
TJ = 125 °C
TJ = 25 °C
- (A)
L
V
ON/OFF
= 1.5 to 8 V
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IL - (A)
V
vs. IL at VIN = 1.8 V
DROP
0.10
IL = 0.7 A
V
= 1.5 to 8 V
ON/OFF
0.06
0.02
Variance (V)
- 0.02
DROP
V
- 0.06
- 0.10
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
Variance vs. Junction Temperature
V
DROP
VIN = 1.8 V
VIN = 4.5 V
0.1
0.0
0123 456
0.5
0.4
0.3
0.2
- On-Resistance (Ω)r
0.1
SS(on)
0.0
0123 456
TJ = 25 °C
VIN (V)
V
vs. VIN at IL = 0.7 A
DROP
TJ = 25 °C
V
IL = 0.7 A
V
ON/OFF
TJ = 125 °C
(V)
IN
= 1.5 to 8 V
On-Resistance vs. Input Voltage
Document Number: 73449
S-61965-Rev. B, 09-Oct-06
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Si1869DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
1.6
IL = 0.7 A
= 1.5 to 8 V
V
ON/OFF
1.4
1.2
- On-Resiistance
(Normalized)
1.0
DS(on)
r
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ- Junction Temperature (°C)
Normalized On-Resistance
vs. Junction Temperature
VIN = 4.5 V
VIN = 1.8 V
20
IL = 1 A
V
= 3 V
ON/OFF
C
µS)
(Time
= 10 µF
i
16
= 1 µF
C
o
t
f
12
t
8
4
0
t
r
t
d(on)
02468 10
R2 (kΩ)
Switching Variation
R2 at V
= 4.5 V, R1 = 20 kΩ
IN
d(off)
(
Time µS)
µS)
(Time
40
t
35
IL = 1 A
V
ON/OFF
C
= 10 µF
i
C
= 1 µF
o
= 3 V
30
25
f
20
t
d(off)
15
10
5
t
r
t
d(on)
0
02468 10
R2 (kΩ)
Switching Variation
R2 at V
250
200
150
IL = 1 A
= 3 V
V
ON/OFF
C
= 10 µF
i
C
= 1 µF
100
o
50
0
020406080100
= 2.5 V, R1 = 20 kΩ
IN
R2 (kΩ)
t
d(off)
t
f
t
r
t
d(on)
Switching Variation
R2 at V
= 4.5 V, R1 = 300 kΩ
IN
100
80
IL = 1 A
V
= 3 V
ON/OFF
60
= 10 µF
C
i
= 1 µF
(Time µS)
C
o
40
t
d(off)
20
t
0
r
02468 10
R2 (kΩ)
Switching Variation
R2 at V
200
t
d(off)
µS)
(Time
150
100
IL = 1 A
V
ON/OFF
C
= 10 µF
i
C
= 1 µF
o
t
f
50
t
d(on)
t
0
r
0 20406080100
= 1.8 V, R1 = 20 kΩ
IN
= 3 V
R2 (kΩ)
Switching Variation
R2 at V
= 2.5 V, R1 = 300 kΩ
IN
t
d(on)
t
f
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Document Number: 73449
S-61965-Rev. B, 09-Oct-06
TYPICAL CHARACTERISTICS 25 °C, unless noted
200
t
d(off)
IL = 1 A
150
V
= 3 V
ON/OFF
C
= 10 µF
i
C
= 1 µF
(Time µS)
100
o
t
f
50
t
d(on)
t
0
r
0 20406080100
Switching Variation
R2 at V
IN
Si1869DH
Vishay Siliconix
R2 (kΩ)
= 1.8 V, R1 = 300 kΩ
Transient
Thermal Impedance
Normalized Effective
2
1
0.1
0.01
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 4
10
Single Pulse
- 3
10
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
JM
4. Surface Mounted
- 2
10
- 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
t
1
t
2
- TA = PDMZ
thJA
t
t
thJA
100
1
2
=100 °C/W
(t)
00601110
Document Number: 73449
S-61965-Rev. B, 09-Oct-06
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Si1869DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
Thermal Impedance
Normalized Effective Transient
0.05
0.02
Single Pulse
0.01
- 4
10
- 3
10
- 2
10
Square Wave Pulse Duration (sec)
- 1
01110
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?73449.
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Document Number: 73449
S-61965-Rev. B, 09-Oct-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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