Vishay Si1869DH Schematic [ru]

Load Switch with Level-Shift

Si1869DH

Vishay Siliconix

PRODUCT SUMMARY

V

(V) r

DS2

1.8 to 20

0.165 at V

0.222 at V

0.303 at V

(Ω)I

DS(on)

= 4.5 V

IN

= 2.5 V

IN

= 1.8 V

IN

(A)

D

± 1.2

± 1.0

± 0.7

DESCRIPTION

The Si1869DH includes a P- and N-Channel MOSFET in a
single SC70-6 package. The low on-resistance P-Channel
TrenchFET is tailored for use as a load switch. The N-Chan­nel, with an external resistor, can be used as a level-shift to

APPLICATION CIRCUITS

Si1869DH

V

IN

R1

4

Q2

6

2, 3

6

C1

V

OUT

FEATURES

• TrenchFET® Power MOSFETS: 1.8 V Rated

• ESD Protected: 2000 V On Input Switch,
V

ON/OFF

• 165 mΩ Low r

DS(on)

RoHS

COMPLIANT

• 1.8 to 20 V Input

• 1.5 to 8 V Logic Level Control

• Low Profile, Small Footprint SC70-6 Package

• Adjustable Slew-Rate

APPLICATIONS

• Level Shift for Portable Devices

drive the P-Channel load-switch. The N-Channel MOSFET
has internal ESD protection and can be driven by logic sig­nals as low as 1.5 V. The Si1869DH operates on supply lines
from 1.8 to 20 V, and can drive loads up to 1.2 A.

40

t

35

IL = 1 A

30

25

(Time µS)

20

V

ON/OFF

C

= 10 µF

i

= 1 µF

C

o

= 3 V

f

ON/OFF

R2

C

i

5

Q1

1

R2

C

o

LOAD

GND

COMPONENTS

R1 Pull-Up Resistor Typical 10 kΩ to 1 MegaΩ*

R2 Optional Slew-Rate Control Typical 0 to 100 kΩ*

C1 Optional Slew-Rate Control Typical 1000 pF

*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.

Document Number: 73449
S-61965-Rev. B, 09-Oct-06

t

15

d(off)

10

5

0

t

r

02468 10

R2 (kΩ)

Note: For R2 switching variations with other VIN/R1

combinations See Typical Characteristics

t

d(on)

Switching Variation

R2 at V

= 2.5 V, R1 = 20 kΩ

IN

The Si1869DH is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.

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Si1869DH

Vishay Siliconix

FUNCTIONAL BLOCK DIAGRAM

SC70-6

Top View

R2

D2

D2

Ordering Information: Si1869DH-T1-E3 (Lead (Pb)-free)

1

2

3

6

5

4

R1, C1

ON/OFF

S2

Marking Code

VC XX

YY

Lot Traceability
and Date Code

Part # Code

S2

ON/OFF

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage (D2-S2)

ON/OFF Voltage

Load Current

Continuous Intrinsic Diode Conduction

Maximum Power Dissipation

a

Continuous

Pulsed

a

a, b

b, c

Operating Junction and Storage Temperature Range

ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω)ESD2kV

V

V

V

ON/OFF

P

, T

T

J

DS

IN

I

L

I

S

D

stg

Si1869DH

4

5

R2

2, 3

Q2

Q1

1

D2

6

R1,
C1

- 20

20

VInput Voltage

8

± 1.2

± 3

A

- 0.4

1.0

- 55 to 150

W

°C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient (continuous current)

Maximum Junction-to-Foot (Q2)

a

R

thJA

R

thJF

100 125

44 55

°C/W

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Reverse Leakage Current

Diode Forward Voltage

I

FL

V

SD

VIN = 8 V, V

IS = - 0.4 A

ON Characteristics

Input Voltage Range

Drain to Source Breakdown Voltage
(P-Channel)

On-Resistance (P-Channel) at 1 A

On-State (P-Channel) Drain-Current

V

V

r

DS(on)

I

D(on)

DS

IN

VGS = 0 V, ID = - 250 µA

V

= 1.5 V, VIN = 4.5 V, ID = 1.2 A

ON/OFF

V

= 1.5 V, VIN = 2.5 V, ID = 1.0 A

ON/OFF

V

= 1.5 V, VIN = 1.8 V, ID = 0.7 A

ON/OFF

V

≤ 0.2 V, VIN = 5 V, V

IN-OUT

V

≤ 0.3 V, VIN = 3 V, V

IN-OUT

Notes:
a. Surface Mounted on FR4 Board.
b. V

= 20 V, V

IN

= 8 V, TA = 25 °C.

ON/OFF

c. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

ON/OFF

= 0 V

ON/OFF

ON/OFF

= 1.5 V

= 1.5 V

1 µA

0.4 0.6 1.1 V

1.8 20

- 20

0.132 0.165

0.177 0.222

0.242 0.303

1

1

V

Ω

A

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Document Number: 73449

S-61965-Rev. B, 09-Oct-06

TYPICAL CHARACTERISTICS 25 °C, unless noted

Si1869DH

Vishay Siliconix

0.6

V

= 1.5 to 8 V

ON/OFF

0.5

0.4

(V)V

0.3

DROP

0.2

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0.6

V

ON/OFF

0.5

0.4

(V)V

0.

3

DROP

0.2

TJ = 125 °C

V

vs. IL at VIN = 4.5 V

DROP

= 1.5 to 8 V

TJ = 125 °C

IL - (A)

TJ = 25 °C

TJ = 25 °C

0.6

V

= 1.5 to 8 V

ON/OFF

0.5

0.4

(V)V

0.3

DROP

0.2

0.1

0.0

0.0 0.5 1.0 1.5 2.0 2.5

0.5

0.4

0.

3

(V)V

DROP

0.2

TJ = 125 °C

I

V

vs. IL at VIN = 2.5 V

DROP

TJ = 125 °C

TJ = 25 °C

- (A)

L

V

ON/OFF

= 1.5 to 8 V

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

IL - (A)

V

vs. IL at VIN = 1.8 V

DROP

0.10
IL = 0.7 A

V

= 1.5 to 8 V

ON/OFF

0.06

0.02

Variance (V)

- 0.02

DROP

V

- 0.06

- 0.10

- 50 - 25 0 25 50 75 100 125 150

TJ- Junction Temperature (°C)

Variance vs. Junction Temperature

V

DROP

VIN = 1.8 V

VIN = 4.5 V

0.1

0.0
0123 456

0.5

0.4

0.3

0.2

- On-Resistance (Ω)r

0.1

SS(on)

0.0
0123 456

TJ = 25 °C

VIN (V)

V

vs. VIN at IL = 0.7 A

DROP

TJ = 25 °C

V

IL = 0.7 A
V

ON/OFF

TJ = 125 °C

(V)

IN

= 1.5 to 8 V

On-Resistance vs. Input Voltage

Document Number: 73449
S-61965-Rev. B, 09-Oct-06

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