Vishay IRLL014, SiHLL014 Data Sheet

www.vishay.com

IRLL014, SiHLL014

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 60

R

()V

DS(on)

Q

max. (nC) 8.4

g

Q

(nC) 3.5

gs

Q

(nC) 6.0

gd

Configuration Single

= 5.0 V 0.20

GS

D

FEATURES

• Surface mount

• Available in tape and reel

• Dynamic dV/dt rating

• Logic-level gate drive

•R

DS(on)

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

SOT-223

D

Marking code: LA

G

S

D

G

S

N-Channel MOSFET

Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.

ORDERING INFORMATION

Package SOT-223
Lead (Pb)-free and Halogen-free SiHLL014TR-GE3
Lead (Pb)-free IRLL014TRPbF

Note

a. See device orientation.

specified at VGS = 4 V and 5 V

Available

a

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 1.7

C

DS

± 10

GS

I

D

IDM 22
Linear Derating Factor 0.025
Linear Derating Factor (PCB mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)

e

b

a

a

= 25 °C

e

c

d

C

TA = 25 °C 2.0

for 10 s 300

E

AS

I

AR

E

AR

P

D

dV/dt 4.5 V/ns

, T

J

stg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

= 25 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 , IAS = 2.7 A (see fig. 12).

b. V

DD

c. I

 10 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

S16-0015-Rev. F, 18-Jan-16

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

60

2.7

0.017
100 mJ

2.7 A

0.31 mJ

3.1

-55 to +150

Document Number: 91319

V

AT

W/°C

W

°C

IRLL014, SiHLL014

D

S

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT

Maximum Junction-to-Ambient 
(PCB mount)

a

Maximum Junction-to-Case (Drain) R

R

thJA

thJC

--60

--40

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.073 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

V

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

iss

- 170 -

oss

-42-

rss

g

--3.5

gs

--6.0

gd

d(on)

r

-17-

d(off)

-26-

f

D

V

Between lead,
6 mm (0.25") from
package and center of

S

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the 
integral reverse
p - n junction diode

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = 250 μA 60 - - V

VDS = VGS, ID = 250 μA 1.0 - 2.0 V

= ± 10 V - - ± 100 nA

GS

VDS = 60 V, VGS = 0 V - - 25

= 48 V, VGS = 0 V, TJ = 125 °C - - 250

V

DS

= 5.0 V ID = 1.6 A

GS

= 4.0 V ID = 1.4 A

GS

b

b

VDS = 25 V, ID = 1.6 A 3.2 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 10 A, VDS = 48 V,

I

= 5.0 V

GS

V

R

= 12 , RD = 2.8 , see fig. 10

g

TJ = 25 °C, IS = 2.7 A, VGS = 0 V

D

see fig. 6 and 13

= 30 V, ID = 10 A,

DD

b

b

D

G

S

b

b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Vishay Siliconix

°C/W

- - 0.20

- - 0.28

- 400 -

--8.4

-9.3-

- 110 -

-4.0-

-6.0-

--2.7

--22

--1.6V

- 65 130 ns

-0.330.65μC

μA



pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

S16-0015-Rev. F, 18-Jan-16

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91319

www.vishay.com

20 µs Pulse Width
T

C

= 25 °C

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

10

0

10

1

10

-1

2.25 V

Bottom

Top

V

GS

7.5 V

5.0 V

4.0 V

3.5 V

3.0 V

2.75 V

2.5 V

10

-2

10

-1

10

1

10

0

V

20 µs Pulse Width
T

C

= 150 °C

VDS, Drain-to-Source Voltage (V)

I

D

, Drain C

u

rrent (A)

10

0

10

1

10

-2

10

-1

2.25 V

Bottom

Top

GS

7.5 V

5.0 V

4.0 V

3.5 V

3.0 V

2.75 V

2.5 V

10

-1

10

1

10

0

20 µs Pulse Width
V

DS

= 25 V

10

1

10

-2

10

-3

I

D

, Drain Current (A)

V

GS

,

Gate-to-Source Voltage (V)

2.5 3 3.5 4 4.5 5

2

25 °C

150 °C

10

-1

10

0

I

D

= 10 A

V

GS

= 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

T

J

,

Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

QG, Total Gate Charge (nC)

V

GS

, Gate-to-Source Voltage (V)

10

6

6

4

0

2

0

2

10

86

4

V

DS

= 30 V

V

DS

= 48 V

For test circuit
see figure 13

ID = 10 A

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRLL014, SiHLL014

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 4 - Normalized On-Resistance vs. Temperature

700

600

500

400

300

Capacitance (pF)

200

100

0

0

10

V

Drain-to-Source Voltage (V)

,

DS

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

C

iss

C

oss

C

rss

1

10

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

S16-0015-Rev. F, 18-Jan-16

Fig. 3 - Typical Transfer Characteristics

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

3

Document Number: 91319