Page 1
IRLML6402PbF
™
Standard Pack
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l Lead-Free
l RoHS Compliant, Halogen-Free
G
1
2
S
Description
These P-Channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device for use in battery
and load management.
A thermally enhanced large pad leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power MOSFET with the
industry's smallest footprint. This package, dubbed the Micro3™, is ideal
for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA
cards. The thermal resistance and power dissipation are the best available.
Package Type
IRLML6402TRPbF Micro3
(SOT-23) Tape and Reel 3000 IRLML6402TRPbF
Form Quantity
HEXFET® Power MOSFET
V
= -20V
R
DS(on)
DSS
= 0.065Ω
D3
Micro3™
Orderable Part NumberBase Part Number
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A
I
DM
PD @TA = 25°C Power Dissipation 1.3
PD @TA = 70°C Power Dissipation 0.8
E
AS
V
GS
T
J, TSTG
Drain- Source Voltage -20 V
Pulsed Drain Current -22
Linear Derating Factor 0.01 W/°C
Single Pulse Avalanche Energy 11 mJ
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Typ. Max. Units
R
θJA
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Maximum Junction-to-Ambient 75 100 °C/W
W
Page 2
IRLML6402PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
ΔV
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA
/ΔT
Breakdown Voltage Temp. Coefficient ––– -0.009 ––– V/°C Reference to 25°C, ID = -1mA
J
Static Drain-to-Source On-Resistance
––– 0.050 0.065 VGS = -4.5V, ID = -3.7A
––– 0.080 0.135 VGS = -2.5V, ID = -3.1A
Ω
Gate Threshold Voltage -0.40 -0.55 -1.2 V VDS = VGS, ID = -250μA
Forward Transconductance 6.0 ––– ––– S VDS = -10V, ID = -3.7A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
––– ––– -1.0 V
––– ––– -25 VDS = -20V, VGS = 0V, TJ = 70°C
µA
nA
= -20V, VGS = 0V
DS
Total Gate Charge ––– 8.0 12 ID = -3.7A
Gate-to-Source Charge ––– 1.2 1.8 nC VDS = -10V
Gate-to-Drain ("Miller") Charge ––– 2.8 4.2 VGS = -5.0V
Turn-On Delay Time ––– 350 ––– VDD = -10V
Rise Time ––– 48 ––– ID = -3.7A
Turn-Off Delay Time ––– 588 ––– RG = 89Ω
ns
Fall Time ––– 381 ––– RD = 2.7Ω
Input Capacitance ––– 633 ––– VGS = 0V
Output Capacitance ––– 145 ––– pF VDS = -10V
Reverse Transfer Capacitance ––– 110 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
** For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
-1.3
-22
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V
Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A
Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/μs
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting T
RG = 25Ω, I
= 25°C, L = 1.65mH
J
= -3.7A.
AS
D
G
S
Page 3
IRLML6402PbF
100
10
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-2.25V
D
-I , Drain-to-Source Current (A)
20μs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
100
J
100
10
TOP
BOTTOM
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
-2.25V
D
-I , Drain-to-Source Current (A)
20μs PULSE WIDTH
1
0.1 1 10 100
-V , Drain-to-Source Voltage (V)
DS
T = 150 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
I =
D
-3.7A
°
T = 25 C
J
°
T = 150 C
J
1.5
1.0
(Normalized)
D
-I , Drain-to-Source Current (A)
V = -15V
DS
10
2.0 3.0 4.0 5.0 6.0 7.0 8.0
-V , Gate-to-Source Voltage (V)
GS
20μs PULSE W IDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
Vs. Temperature
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
-4.5V
Page 4
IRLML6402PbF
1000
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
800
600
400
200
Ciss
Coss
V
= 0V, f = 1 MHZ
GS
C
= C
iss
gs
C
= C
rss
gd
C
= C
ds
+ C
oss
+ Cgd, C
gd
Crss
0
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
SHORTED
ds
10
I =
-3.7A
D
V =-10V
8
6
4
2
GS
-V , Gate-to-Source Voltage (V)
0
0 3 6 9 12
Q , Total Gate Charge (nC)
G
DS
FOR TEST CIRCUIT
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
10us
100us
1ms
10ms
10
°
T = 150 C
J
1
°
T = 25 C
J
SD
-I , Reverse Drain Current (A)
V = 0 V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
-V ,Source-to-Drain Voltage (V)
SD
GS
Fig 7. Typical Source-Drain Diode
10
1
D
-I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
0.1 1 10 100
°
J
-V , Drain-to-Source Volt age ( V)
DS
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Page 5
IRLML6402PbF
4.0
3.0
2.0
D
-I , Drain Current (A)
1.0
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
25
TOP
20
15
10
5
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
I
D
-1.7A
-3.0A
-3.7A
°
100
thJA
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
Thermal Response (Z )
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
t , Rectangular Pulse Duration (sec)
1
J DM thJA A
1 2
P
DM
t
1
t
2
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Page 6
0.14
)
Ω
(
0.12
e
g
a
t
l
o
V
0.10
e
c
r
u
o
S
0.08
o
t
n
i
a
r
0.06
D
,
)
n
o
0.04
(
S
D
R
0.02
2.0 3.0 4.0 5.0 6.0 7.0
-V
Gate -to -Source Voltage ( V )
GS,
Id = -3.7A
IRLML6402PbF
)
0.20
Ω
(
e
c
n
a
t
0.16
s
i
s
e
R
n
O
0.12
e
c
r
u
o
S
o
0.08
t
n
i
a
r
D
,
0.04
)
n
o
(
S
D
0.00
R
0 5 10 15 20 25 30
VGS = -2.5V
VGS = -4.5V
-ID , Drain Current ( A )
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Fig 13. Typical On-Resistance Vs.
Drain Current
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Page 7
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
6
D 5
3
12
e
e1
A2
A
3X b
A1
bbb C A B
R ECOMME NDE D F OOT PR INT
0.972
3X
[.038]
0.95
[.0375 ]
1.90
[.075]
E1
B 5
6
2.742
[.1079]
3X
ccc C B A
aaa C
3 S URF
0.802
[.031]
E
NOTES
1. DIME NS IONING AND T OLE RANCING PE R AS ME Y14. 5M-1994 .
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES .
3. CONTROLLING DIME NSION: MILLIMETER.
4 DATUM PL ANE H IS LOCATED AT THE MOLD PARTING LINE.
5 D AT UM A AND B T O B E DE T E R MIN ED AT DAT U M PL AN E H .
6 D IME NS I ON S D AND E 1 AR E ME AS UR ED AT DAT U M P LAN E H.
7 DIME NSION L IS THE LE AD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.
M
B
MIL L I ME T ER S
O
L
MIN
A
0.89
1.12
A1
0.01
0.10
0.88
1.02
A2
b0.30
0.50
c
0.08
0.20
D
3.04
2.80
E
2.10
2.64
1.40
1.20
E1
e
0.95 BS C
e1 1.90 BS C .075 B SC
L 0.40 0.60
0.25 BS CL1
0
0° 8° 8°0°
aaa
0.10
bbb
0.20
ccc
0.15
H4
3X L
7
Micro3 (SOT-23 / TO-236AB) Part Marking Information
IRLML6402PbF
DIMENSIONS
INCHES
MINMAX MAX
.036
.044
.0039
.0004
.035 .040
.0119
.0196
.0032
.0078
.111
.119
.083
.103
.048 .055
.0375 BS C
.0236.0158
.0118 BS C
.004
.008
.006
L1
0
Notes: This part marking information applies to devices produced after 02/26/2001
DATE CODE
PART NUMBER
Cu WIRE
HALOGEN FREE
ASSEMBLY LOT CODE
X = PART NUMBER CODE REFERENCE :
A = IRLM L2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
S = IRLML6244
T = IRLML6246
U = IRLM L6344
V = IRLML6346
W = IRFML8244
X = IRLM L2244
Y = IRLML2246
Z = IRFML9244
LEAD-FREE
DATE CODE EXAMPLE:
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
YEAR
2011
2012
2002 2
2013
2014
2004 4
2015
200676
2016
2017
2007
2018
2019
2009 9
2010 0
2020
W = (27-52) IF PRECEDED BY A LETTER
YEAR
2011
2002
2012
2013
2003
2014
2004
2015
2005
2016
2006
2017
YWW = 432 = DF
YWW = 503 = 5C
2018
2019
2020
2007
2008
2009 J
2010
WORK
Y
WEEK
12001
32003
52005
82008
WORK
Y
WEEK
A2001 A27
B
C
D
E
F
G
H
K
0102A
04 D
24
25
26
28
29
30
50 X
52 Z
W
B
C03
X
Y
Z
W
B
C
D
Y51
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Page 8
IRLML6402PbF
Micro3™(SOT-23/TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
178.00
( 7.008 )
MAX.
4.1 ( .161 )
3.9 ( .154 )
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 )
1.1 ( .043 )
0.9 ( .036 )
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
9.90 ( .390 )
8.40 ( .331 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Page 9
IRLML6402PbF
MS L 1
(per JE DE C
J-S TD-020D
)
RoHS c ompli ant
Yes
Qualification information
Cons u mer
•
•
†
Qualification level
Moisture Sensitivity Level Micr o3™ (SOT-23)
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
(per JEDEC JE S D47F†† guidelines)
††
Revision History
Date Comment
Updated data sheet with new IR c orporate template.
•
4/28/2014
Updated package outline & part marking on page 7.
Added Qualification table -Qual level "Consumer" on page 9.
•
Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014
Page 10
Loading...