TOSHIBA TLP798GA Technical data

TOSHIBA Photocoupler Photo Relay
TLP798GA
TLP798GA
Telecommunication
Data Acquisition
Measurement Instrumentation
The TOSHIBA TLP798GA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photoMOS FET in a six lead plastic DIP package (DIP6). The TLP798GA is a bi-directional switch which can replace mechanical relays in many applications.
Peak offstate voltage: 400 V (min.)
Onstate current: 150 mA (max.) (A connection)
Onstate resistance: 12 (max.) (A connection)
Isolation voltage: 5000 Vrms (min.) (A connection)
Isolation Thickness: 0.4 mm (min.)
TOSHIBA 11−7A8
Weight: 0.4 g
Pin Configuration
Unit in mm
(top view)
1
2
3

Schematic

1
2
6
1. : ANODE
2. : CATHODE
3. : NC
5
4. : DRAIN D1
5. : SOURCE
4
6. : DRAIN D2
6
5
4
1
2007-10-01
TLP798GA
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Forward current IF 30 mA
Forward current derating (Ta 25°C) ΔIF / °C 0.3 mA / °C
Peak forward current (100 μs pulse, 100 pps) IFP 1 A
LED
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Offstate output terminal voltage V
Onstate RMS current
Detector
Onstate current derating (Ta 25°C)
Junction temperature Tj 125 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10 s) T
Isolation voltage (AC, 1 min., R.H. 60%) (Note 2) BVS 5000 Vrms
(Ta = 25°C)
400 V
OFF
A connection 150
B connection 200
C connection
A connection −1.5
B connection −2.0
C connection
ION
300
ΔI
/ °C
ON
3.0
55~125 °C
stg
40~85 °C
opr
260 °C
sol
mA
mA / °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note 2): Device considered a twoterminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted
together.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VDD — — 320 V
Forward current IF 5 7.5 20 mA
Onstate current (A connection) ION — — 150 mA
Operating temperature T
20 — 80 °C
opr
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.

Circuit Connections

1
2
3
6
5
4
LOAD
or
AC DC
A connection B connection C connection
1
2
3
6
5
4
LOAD
DC
1
2
3
6
5
4
LOAD
DC
2
2007-10-01
TLP798GA
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10 mA 1.18 1.33 1.48 V
Reverse current IR VR = 5 V 10 μA
LED
Capacitance CT V = 0, f = 1 MHz 30 pF
Offstate current I
Detector
Capacitance C
V
OFF
V = 0, f = 1 MHz pF
OFF
(Ta = 25°C)
= 400 V 1 μA
OFF
Coupled Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Trigger LED current IFT ION = 150 mA 1 3 mA
A connection ION = 150 mA, IF = 5 mA 8 12
Onstate resistance
B connection ION = 200 mA, IF = 5 mA 4 6
C connection
R
ON
(Ta = 25°C)
= 300 mA, IF = 5 mA 2 3
I
ON
Isolation Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance input to output CS VS = 0, f = 1 MHz 0.8 pF
Isolation resistance RS VS = 500 V, R.H. 60% 5 × 1010 1014 —
Isolation voltage BVS
AC, 1 minute 5000
AC, 1 second (in oil) 10000
DC, 1 minute (in oil) 10000 V
Vrms
DC
Switching Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Turnon time tON — 0.3 1.0
Turnoff time t
(Ta = 25°C)
OFF
V
= 20 V, RL = 200
DD
= 5 mA (Note 3)
I
F
— 0.2 1.0
ms
(Note 3): Switching time test circuit
IF
V
DD
RL
6 1
2
4
V
OUT
V
I
F
OUT
tON
10%
90%
t
OFF
3
2007-10-01
TLP798GA
100
80
I
F
– Ta
A, C connection
280
B connection
240
P
– Ta
C
60
(mA)
F
I
40
Allowable forward current
20
100
50
30
10
(mA)
F
0.5
Forward current I
0.3
0.1
0
20
0 20
Ambient temperature T
Ta = 25 °C
5
3
1
0.8
0.6
Forward voltage V
40
– VF
I
F
1.0 1.2
60
(°C)
a
(V)
F
80 100
1.6 1.8 1.4
200
160
(mW)
120
C
P
80
40
Allowable MOS FET power dissipation
0
20
350
300
250
(RMS) (mA)
200
ON
150
100
50
On-state current I
0
20
20
0
40
Ambient temperature T
(RMS) – Ta
I
ON
C connection
B connection
A connection
0
20 40 60
Ambient temperature T
60
80
(°C)
a
80
(°C)
a
100
100
120
120
– DR
I
5000
3000
1000
(mA)
FP
500
300
FP
Pulse width≦100μs
Ta = 25 °C
100
50
30
Pulse forward current I
10
3
10
3
2
10
3
3 3
Duty cycle ratio D
1
10
R
100
4
2007-10-01
TLP798GA
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.
20070701-EN
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
5
2007-10-01
Loading...