Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors (HV-Trs). Radical redesign of
the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density
and superior electrical characteristics compared to those of fourth-generation products. Toshiba’s propriety glassmesa structure results in a high breakdown voltage.
Thanks to Toshiba’s wealth of experience and the wide variety of products which the company can offer, Toshiba
horizontal-deflection-output transistors are used World-wide in color TVs and video display monitors.
2
Appearance, Package and Weight
The photographs below show the products and their markings. The packages shown are is the straight-lead
packages used for standard products.
Appearance
TO-3P(H)ISTO-3P(LH)
2SC5411
5.5g ( typ. )
2SC5570
9.75g ( typ. )
Package dimensions
3.6 ± 0.33.0 ± 0.315.5 ± 0.5
4.0
2.3 max
0.95 max
5.45
+ 0.25
3.3
4.5
0.9 – 0.1
123
10.0
1.2
2.52.0
5.45
2.0
26.5 ± 0.5
5˚
16.4 min
5.5 ± 0.3
10˚
1. Base
2. Collector
3. Emitter
(Unit : mm)
TO-3P(LH)TO-3P(H)IS
10˚
23.0
22.0 ± 0.5
5˚
5˚
20.5 max 3.3 ± 0.2
2.5
3.0
123
1.5
1.5
1.5
2.50
+ 0.3
1.0 – 0.25
5.45 ± 0.155.45 ± 0.15
– 0.10
+ 0.25
0.6
6.0
± 0.5
4.0
26.0
2.0
11.0
± 0.6
20.0
5.2 max
2.8
1. Base
2. Collector (heat sink)
3. Emitter
2.0
3
3
BE
BE
Device Trends
Market trends and the development of horizontal-deflection output transistors
Device Trends
Market requirements
TV
Wide-screen TVs
Wide-screen
•
aspect ratio: (4 : 3) –> (16 : 9)
Large screen size
•
Flat screen
•
Low loss
•
Lower prices
•
Development of Horizontal-Deflection Output Transistors
HDTVs / Projectors
Multimedia-compatible TVs
Digital TV
Improved in screen resolution quality
•
Screen resolution: 525p, 1125i, 780p
Progressive system is improved
Starting grand wave digital
broadcasting
Various appllications such as
DVDs and Cable TVs
Various screen size
•
Flat screen
•
Low loss
•
Emitter contact shape and chip size optimization
Enhancement of 1700 V
•
product line
Low price due to reduction in
•
chip size
Fourth generation of horizontal-
deflection output transistors
Development of 2000-V products
•
Development of products incorporating
•
diodes for use in digital TVs
Shorter t
•
•
V
•
TO-3P(H)IS packages
21-A products available
•
rr
Reduced saturation voltage
(sat) = 3 V (max)
CE
High-current devices housed in
Reduced variation in product characteristics
Fifth generation of horizontal-deflection
s
output transistors
Video display monitors
High horizontal frequency
•
21 inches f
Large screen size
•
Standard size: 15 inches –> 17 inches
Low price
•
Reduced part count
(driving circuit and resonating capacitor are fixed)
Low loss
•
Flat screen
•
Reduced switching loss (tf parts) due to
•
high-frequency operation tf = 150 ns (max)
Reduced saturation voltage at high currents
•
V
CE
High-current devices housed in
•
TO-3P(H)IS packages
21-A products available
Increased allowable power dissipation
•
TO-3P(H) IS 65 W –> 75 W
TO-3P(LH) 200 W –> 220 W
Reduced variation in product characteristics
•
= 120 kHz –> 135 kHz
H
(sat) = 3 V (max)
4
High breakdown capability
1
The product features a glass mesa structure,
the use of which yields a wide forward- and
reverse-biased safe operating area.
Low saturation voltage
2
VCE(sat) = 3 V (max)
Note: Used for 2SC-Series devices without
damper diodes.
Wider range of optimum drive conditions
3
Fluctuation in optimum drive conditions due to variation in device quality has been minimized for
ease of design.
Revised emitter contact shape and optimized chip size
3
Chip design has been optimized using Toshiba simulation technology. The emitter's contact area
has been widened by changing the contact shape below the emitter electrode from comb type to the
new mesh type. As a result, the saturation voltage (V
reduced, thus reducing switching loss.
Device with highest I
High-current version of 2SC5411
1700-V version of 2SC5411
2SC5587 and 2SC5589 use same chip.
2SC5588 and 2SC5590 use same chip.
Equivalent to 2SC5445
2SC5717 and 2SC5695 use same chip.
Equivalent to 2SC5411
Equivalent to 2SC5570
Target UseRemarks
Equivalent to 2SD2553
Target UseRemarks
Device with highest I
˜
1700-V version of 2SC5411
2SC5588 and 2SC5590 use same chip.
˜
˜
= 2000 V series
V
CBO
Built-in damper diode (High-current version of 2SC5143)
= 2000 V series
V
CBO
V
= 2000 V series (built-in damper diode)
CBO
Equivalent to 2SC5570
(max) ratings
C
(max) ratings
C
Note
★
★
★: Production schedules are provisional.
Note
Note
★
★
★
★: Production schedules are provisional.
7
Package
P
C
**
IC (sat)
3 A
3.5 A
4 A
4.5 A
5 A
5.5 A
6 A
7 A
8 A
11 A
12 A
14 A
15 A
17 A
22 A
Notes: **: IC(sat) is value of IC for V
( )
6
*
Product Line Matrix
Built-in
damper diode
2SD2599
2SD2586
2SD2499
S2055N
2SD2539
2SC5339
2SC5280
2SD2559
: 3rd generation (old design)
: 4th generation (new design)
: 5th generation (new design)
: 5th generation (new design under development)