TOSHIBA CT60J321 Technical data

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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT60J321

GT60J321

The 4th Generation

Soft Switching Applications

· Enhancement-mode

· High speed: t

· Low saturation voltage: V

= 0.30 µs (typ.) (IC = 60 A)

f

CE (sat)

Maximum Ratings

Characteristics Symbol Rating Unit

Collector-emitter voltage V

Gate-emitter voltage V

Collector current

Emitter-collector forward
current

Collector power dissipation
(Tc = 25°C)

Junction temperature T

Storage temperature range T

Screw torque ¾

(Ta ==== 25°C)

DC IC 60

1 ms I

DC I

1 ms I

Equivalent Circuit

= 1.55 V (typ.) (IC = 60 A)

CES

±25 V

GES

120

CP

60

ECF

120

ECPF

P

200 W

C

j

stg

600 V

150 °C

-55~150 °C

0.8 N･m

Unit: mm

A

A

JEDEC ―

JEITA ―

TOSHIBA 2-21F2C

Weight: 9.75 g (typ.)

Collector

Gate

Emitter

1

2002-01-18

GT60J321

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Collector cut-off current I

Gate-emitter cut-off voltage V

Collector-emitter saturation voltage

Input capacitance C

Rise time tr ¾ 0.25 ¾

Switching time

Forward voltage VF IF = 60 A, VGE = 0 ¾ 1.5 2.0 V

Reverse recovery time trr I

Thermal resistance (IGBT) R

Thermal resistance (Diode) R

Turn-on time ton ¾ 0.35 ¾

Fall time tf ¾ 0.30 0.50

Turn-off time t

(Ta ==== 25°C)

GE (OFF)

V

CE (sat)

V

CE (sat)

VGE = ±25 V, VCE = 0 ¾ ¾ ±500 nA

GES

VCE = 600 V, VGE = 0 ¾ ¾ 1.0 mA

CES

IC = 60 mA, VCE = 5 V 3.0 ¾ 6.0 V

(1) IC = 10 A, VGE = 15 V ¾ 1.2 1.7

(2) IC = 60 A, VGE = 15 V ¾ 1.55 1.9

VCE = 10 V, VGE = 0, f = 1 MHz ¾ 13500 ¾ pF

ies

15 V

0

off

th (j-c)

th (j-c)

-15 V

= 60 A, VGE = 0, di/dt = -100 A/ms ¾ 0.1 0.2 ms

F

¾ ¾ ¾ 0.625 °C/W

¾ ¾ ¾ 0.96 °C/W

18 W

300 V

5 9

¾ 0.80 ¾

V

ms

2

2002-01-18