F
XC6602 Series
ETR03045-004
1A, 0.5V Low Input Voltage, High Speed LDO Regulator
■GENERAL DESCRIPTION
The XC6602 series is a low voltage input (0.5V) operation and provides high accuracy ±15mV/±20mV and can supply large
current efficiently due to its ultra low on-resistance even at low output voltages.
The series is ideally suited to the applications which require high current in low input/output voltages and consists of a Nch
driver transistor, a voltage reference, an error amplifier, a current limiter, a fold-back circuit, a thermal shutdown (TSD) circuit, an
under voltage lock out (UVLO) circuit, a soft-start circuit and a phase compensation circuit.
Output voltage is selectable in 0.1V increments within a range of 0.5V to 1.8V using laser trimming technology and ceramic
capacitors can be used for the output stabilization capacitor (C
start-up can be reduced and makes the V
The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced
power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor (C
to be discharged via the internal switch. As a result the V
The CE pull-down function keeps the IC to be in stand-by mode even if the CE pin is left open.
■APPLICATIONS
● Mobile phones / Smart Phone
● Digital still cameras / Video camera
● Note PC / Tablet PC
● E-book Reader
● Wireless LAN
■ TYPICAL APPLICATION CIRCUIT
stable. The soft-start time is optimized internally.
IN
OUT
). The inrush current (I
L
) from VIN to V
RUSH
for charging CL at
OUT
pin quickly returns to the VSS level.
■FEATURES
Maximum Output Current
ON Resistance :
Bias Voltage Range :
Input Voltage Range :
Output Voltage Range :
Output Voltage Accuracy
±0.020＠V
Ripple Rejection
75dB＠f=1kHz(V
Low Power Consumption
Stand-by Current :
Under-voltage Lockout : 1.8V (V
Thermal Shutdown :
Protection Circuit : Fold-back Current Limit, TSD, UVLO
Function : Built-in Soft-start
Operating Ambient Temperature
Output Capacitor :
Packages : USP-6C, SOT-26W, SOT-89-5
Environmentally Friendly
:
: 1A (1.3A Limit)
0.15Ω＠V
2.5V～6.0V
0.5V～3.0V
0.5V～1.8V (0.1V increments)
:
±0.015V＠V
: 60dB＠f=1kHz (V
100μA (V
0.01μA (V
150℃＠detect, 125℃＠release
CE Pull-Down (Active High)
Auto Discharge
C
L
:
-40℃～+85℃
Ceramic Capacitor Compatible (2.2μF)
: EU RoHS Compliant, Pb Free
=3.6V,V
BIAS
＜1.2V
OUT
≧1.2V
OUT
), 6.5μA(VIN)＠V
BIAS
), 0.01μA (VIN)
BIAS
), 0.4V (VIN)
BIAS
BIAS_PSRR
IN_PSRR
■TYPICAL PERFORMANCE
BIAS
, C
BIAS=CIN
OUT
=1.0μF, CL=2.2μ
Ta=25℃
(mA)
CHARACTERISTICS
●Dropout Voltage vs. Output Current
XC6602x121MR-G
VCE=V
250
200
150
100
50
Dro pou t Voltage: Vdif(mV)
0
0 200 400 600 800 1000
VBIAS=3.3V
VBIAS=3.6V
VBIAS=5.0V
Output Current: I
OUT
=1.2V
)
)
OUT
1/29
)
L
=1.2V
XC6602 Series
■PIN CONFIGURATION
*The dissipation pad for the USP-6C package should be solder-plated in recommended mount pattern and metal masking so as to enhance
mounting strength and heat release. If the pad needs to be connected to other pins, it should be connected to the V
■PIN ASSIGNMENT
(No. 2) pin.
SS
PIN NUMBER
USP-6C SOT-26W SOT-89-5
1 6 3 V
PIN NAME FUNCTIONS
Power Supply Input
BIAS
3 4 4 VIN Driver Transistor Input
4 3 5 V
Output
OUT
5 2 - NC No Connection
2 5 2 VSS Ground
6 1 1 CE ON/OFF Control
■FUNCTION CHART
XC6602 Series, Type A/B
PIN NAME SIGNAL STATUS
L Stand-by
CE
H Active
OPEN Stand-by
■PRODUCT CLASSIFICATION
●Ordering Information
●XC6602 Series
XC6602①②③④⑤⑥-⑦
DESIGNATOR ITEM SYMBOL DESCRIPTION
①
②③ Output Voltage 05~18 e.g. 1.2V → ②=1、③=2
④ Output Voltage Accuracy 1 ±0.015V (V
⑤⑥-⑦
(*1)
The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.
(*1)
(*1)
With soft-start circuit built-in, can be selected from with or without functions
Type
A Soft-start included
B Soft-start excluded
＜1.2V)、±0.020V (V
OUT
ER-G USP-6C (3,000/Reel)
Packages (Order Unit)
MR-G SOT-26W (3,000/Reel)
PR-G SOT-89-5 (1,000/Reel)
2/29
OUT
≧1.2V)
S
SS
■BLOCK DIAGRAMS
・Type A
・Type B
* Diodes inside the circuits are ESD protection diodes and parasitic diodes.
■ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNITS
Bias Voltage V
Input Voltage VIN V
Output Current I
Output Voltage V
CE Input Voltage VCE V
Power Dissipation
USP-6C
SOT-26W
SOT-89-5
V
BIA
1.65
OUT
VSS-0.3～V
OUT
Pd
-0.3～VSS+6.5 V
-0.3～VSS +6.5 V
SS
-0.3～VIN+0.3≦VSS+6.5 V
V
SS
SS
1000 ( PCB mounted )
600 ( PCB mounted )
1300 ( PCB mounted )
(*1)
A
+0.3≦VSS+6.5 V
BIAS
-0.3～VSS+6.5 V
120
250
500
(*2)
(*2)
(*2)
Operating Ambient Temperature Topr -40～+85 ℃
Storage Temperature
(*1) I
(*2) The power dissipation measured with the test board condition is listed as reference data.
≦Pd/（VIN-V
OUT
OUT
）
Please refer to page 24～26 for details.
Ts t g - 5 5 ～+125 ℃
Ta =2 5 ℃
mW
XC6602
Series
3/29
XC6602 Series
■ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS MIN TYP MAX
Bias Voltage V
Input Voltage VIN 0.5 - 3.0 V ①
Output Voltage V
Maximum Output Current
（*４）
I
Load Regulation ΔV
Dropout Voltage Vdif
Supply Current 1
(*6)
I
Supply Current 2 IIN I
Stand-by Current 1 I
Stand-by Current 2 I
Bias Line Regulation
Input Line Regulation
Bias UVLO Voltage V
Bias UVLO Release Voltage V
Input UVLO Voltage V
Input UVLO Release Voltage V
Output Voltage Temperature
Characteristics
(ΔTo pr ・V
Bias Ripple Rejection Ratio V
Input Ripple Rejection Ratio V
Limit Current
（*3）
I
Short Current I
Thermal Shutdown
Detect Temperature
Thermal Shutdown
Release Temperature
Thermal Shutdown Hysteresis Width
CLAuto-Discharge Resistance R
CE ”H” Level Voltage V
CE ”L” Level Voltage V
CE ”H” Level Current I
CE ”L” Level Current I
Soft-Start Time (Type A)
Output Rise Time (Type B)
(*7)
(*7)
Inrush Current (Type A)
NOTE:
Unless otherwise stated, V
* 1: V
* 2: V
* 3: Mount conditions affect heat dissipation. Maximum output current is not guaranteed when TSD starts to operate earlier.
* 4: Vdif = {V
V
V
* 5: Please refer to the table E-1 named DROPOUT VOLTAGE CHART
* 6: Supply current 1 may be fluctuated because that some bias current flows into the output.
* 7: A time between the CE input goes over the CE H threshold and the output reaches V
= Effective output voltage
OUT(E)
= Nominal output voltage
OUT(T)
}.
IN1-VOUT1
is an input voltage when V
IN1
is a voltage equal to 98% of the output voltage where V
OUT1
BIAS=VCE
=3.6V, VIN=V
2.5 - 6.0 V ①
BIAS
V
＜1.2V -0.015 +0.015
OUT(T)
OUT(T)
OUT(T)
V
≧1.2V -0.020
OUT(T)
≦1.2V
=2.5V
＞1.2V
1.0 - - A ①
V
OUT(T)
(*2)
+0.020
+1.3V
≦1A - 37 68 mV ①
OUT
=1A - E-1
OUT
=0A 76 100 143 μA ②
OUT
V
＜1.2V 0.1 - 8.7
OUT(T)
V
≧1.2V 3.9 - 14.2
OUT(T)
≦1.2V,VCE=V
≦6.0V
BIAS
＞1.2V,VCE=V
BIAS
=100mA
OUT
=3.6VDC+0.2V
+0.3VDC+0.2V
BIAS
BIAS
≦6.0V
p-pAC
=OPEN
BIAS
p-pAC
- 0.01 0.10 %/V ①
- 1.28 V ①
SS
-
SS
- ±30 - ppm/℃ ①
- 60 - dB ③
- 75 - dB ③
(*5)
mV ①
0.23
×0.95 1.0 1.3 - A ①
- 90 - mA ①
OUT=VSS
130 190 255 Ω ①
- 0.41 V ④
SS
=6.0V 3.2 6.0 10.6 μA ④
=6.0V,VCE=VSS -0.1 - 0.1 μA ④
V
≦1.2V - - 70 mA ⑤
OUT（T
）
V
＞1.2V - - 85 mA ⑤
OUT（T
）
V
≦1.2V - - 155 mA ⑤
OUT（T
）
V
＞1.2V - - 215 mA ⑤
OUT（T
）
=1.0μF, CL=2.2μF
BIAS=CIN
BIAS=VCE
=3.6 and VIN=V
OUT(T)
OUT(E)
+0.3V at I
x0.9V.
=1A is input to the VIN pin.
OUT
(*1)
OUT(E)
I
=100mA
OUT
V
V
OUTMAX
1mA≦I
OUT
(*4)
I
I
BIAS
V
BIAS_STB
V
IN_STB
ΔV
/
OUT
・
V
)
(ΔV
BIAS
ΔV
(ΔV
BIAS_UVLOD
BIAS_UVLOR
IN_UVLOD
IN_UVLOR
ΔV
BIAS_PSRR
T
TSD
OUT
/
OUT
)
IN・VOUT
V
2.5 - 6.0 V ①
V
0.5 - 3.0 V ①
/
OUT
)
OUT
I
OUT
IN_PSRR
V
LIM
SHORT
T
TSD
T
TSR
- T
DCHG
CEH
CEL
V
CEH
V
CEL
I
OUT
V
Junction Temperature - 150 - ℃ ①
Junction Temperature - 125 - ℃ ①
Junction Temperature - 25 - ℃ ①
TSR
V
0.65 - 6.00 V ④
V
tSS V
tON V
BIAS=VCE
V
V
BIAS=VCE=VOUT(T)
=0A
OUT
=6.0V,VIN=3.0V,VCE=VSS - 0.01 0.10 μA ②
BIAS
=6.0V,VIN=3.0V,VCE=VSS - 0.01 0.15 μA ②
BIAS
V
OUT(T)
2.5V≦V
V
OUT(T)
+1.3V≦V
V
OUT(T)
+0.1V≦VIN≦3.0V - 0.01 0.10 %/V ①
V
OUT(T)
I
-40℃≦To pr ≦85℃
V
BIAS=VCE
=100mA,f=1kHz,C
V
IN=VOUT(T)
=100mA,f=1kHz,CIN=OPEN
OUT=VOUT(E)
CE=VSS,VOUT=VOUT(T)
BIAS=VCE
BIAS
=0V→3.6V,tr=5μs 225 430 600 μs ⑤
CE
=0V→3.6V,tr=5μs - - 110 μs ⑤
CE
CL=2.2μF
I
RUSH
C
=10μF
L
+0.3V, I
OUT(T)
appears at the output during decreasing input voltage gradually.
OUT1
=1mA, C
OUT
Ta =2 5 ℃
UNITS CIRCUIT
V ①
μA ②
V ①
4/29
■OUTPUT VOLTAGE CHART
E-1
NOMINAL
OUTPUT
VOLTAGE
V
OUT(T)
V
=3.0V V
BIAS
Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV)
VGS
(V)
TYP. MAX.
VGS
(V)
=3.3V V
BIAS
TYP. MAX.
0.5 2.5 152 218 2.8 3.1 3.7 4.5
0.6 2.4 2.7 3.0 3.6 4.4
155 223
0.7 2.3
146 213
2.6
0.8 2.2 158 228 2.5 152 218 2.8 3.4 4.2
0.9 2.1 162 233 2.4 2.7 3.3
155 223
1.0 2.0 165 238 2.3
1.1 1.9 167 243 2.2 158 228 2.5 152 218 3.1 3.9
1.2 1.8 169 253 2.1 162 233 2.4 3.0 3.8
1.3 1.7 179 268 2.0 165 238 2.3
1.4 1.6 189 283 1.9 167 243 2.2 158 228 2.8 3.6
1.5 1.5 202 303 1.8 169 253 2.1 162 233 2.7 3.5
1.6 1.4 213 328 1.7 179 268 2.0 165 238 2.6
1.7 1.3 225 373 1.6 189 283 1.9 167 243 2.5 152 218 3.3
1.8 1.2 255 423 1.5 202 303 1.8 169 253 2.4 155 223 3.2 146 213
* Dropout voltage is defined as the V
(=V
GS
BIAS–VOUT(E)
DROPOUT VOLTAGE (mV)
=3.6V V
BIAS
V
GS
(V)
TYP. MAX.
2.9 3.5 4.3
146 213
2.6
155 223
BIAS
V
GS
(V)
TYP. MAX.
140 208
3.2 4.0
146 213
2.9 3.7
) of the driver transistor.
=4.2V V
VGS
(V)
4.1
3.4
BIAS
TYP. MAX.
XC6602
Series
=5.0V
137 206
140 208
5/29
XC6602 Series
■OPERATIONAL EXPLANATION
The voltage divided by resistors R1 and R2 is compared with the internal reference voltage by the error amplifier. The V
pin is then driven by the subsequent output signal. The output voltage at the V
system of negative feedback.
V
pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. Also, the V
BIAS
some current as output current. VIN pin is connected to a driver transistor and provides output current.
In order to obtain high efficient output current through low on-resistance, please take enough V
driver transistor.
Figure1: XC6602 Series, Type A
<Soft-Start Function>
With the XC6602 (Type A), the inrush current (I
the V
stable.
IN
) from VIN to V
RUSH
for charging CL at start-up can be reduced and makes
OUT
As for the XC6602, the soft-start time in the type A is optimized internally. On the other hand, the type B of the XC6602 does
not have the soft-start time function.
<Current Limiter, Short-Circuit Protection>
The XC6602 series includes a combination of a fixed current limiter circuit and a foldback short-circuit protection. When the
output current reaches the current limit, the output voltage drops and this operation makes the output current foldback to be
decreased.
<Thermal Shutdown Circuit (TSD) >
When the junction temperature of the built-in driver transistor reaches the temperature limit, the thermal shutdown circuit
operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is
released and the IC’s operation is automatically restored because the junction temperature drops to the level of the thermal
shutdown release temperature.
<Under Voltage Lock Out (UVLO) >
When the V
caused by unstable operation of the internal circuitry. When the V
pin and VIN pin voltage drops, the output driver transistor is set to OFF by UVLO function to prevent false output
BIAS
pin voltage and the VIN pin voltage rises at release
BIAS
voltage, the UVLO function is released. The driver transistor is turned ON and start to operate voltage regulation.
6/29
pin is controlled and stabilized by a
OUT
pin supplies
BIAS
GS
(=V
BIAS
– V
OUT(E)
) of the
OUT
XC6602
■OPERATIONAL EXPLANATION (Continued)
<CE Pin>
The XC6602 internal circuitry can be shutdown via the signal to the CE pin. In shutdown mode with CE low level voltage,
the V
pin will be pulled down to the V
OUT
level via CL discharge resistance (R
SS
) placed in parallel to R1 and R2.
DCHG
The CE pin has pull-down circuitry so that CE input current flows during IC operation. If the CE pin voltage is taken from
V
pin or VSS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of
BIAS
through current in the IC's internal circuitry when medium voltage is input.
<CL High Speed Auto-Discharge>
XC6602 series can quickly discharge the electric charge at the output capacitor (CL) via the internal transistor located
between the V
When the IC is disabled, electric charge at the output capacitor (C
Discharge time of the output capacitor (C
By setting time constant of a CL auto-discharge resistance value (R
), the output voltage after discharge via the internal transistor is calculated by the following formula. Please also note
R
DCHG
R
is depended on V
DCHG
(V: Output voltage after discharge, V
τ: C
auto-discharge resistance R
L
pin and the VSS pin when a low signal to the CE pin which enables a whole IC circuit put into OFF state.
OUT
) is quickly discharged so that it could avoids malfunction.
L
. When V
BIAS
) is set by the CL auto-discharge resistance (R
L
DCHG
is larger, R
BIAS
V = V
OUT(E)
: Initial Output voltage, t: Discharge time,
OUT(E)
DCHG×CL
Output capacitance
is smaller.
DCHG
-t/τ
×
e
or ｔ=τln（
) and an output capacitor value (CL) as τ(τ= CL x
V
/ V
）
OUT(E)
) and the output capacitor (CL).
DCHG
<Low ESR Capacitor>
With the XC6602 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase
compensation circuit is built-in. The output capacitor (C
) should be connected as close to V
L
pin and VSS pin to obtain
OUT
stable phase compensation. Values required for the phase compensation are as the table below.
For a stable power input, please connect an bias capacitor (C
connect an input capacitor (C
) between the VIN pin and the VSS pin. In order to ensure the stable phase compensation
IN
while avoiding run-out of values, please use the capacitor (C
much. The table below shows recommended values of C
CHART 1：
OUTPUT VOLTAGE RANGE
Recommended Values of C
BIAS, CIN, CL
(MIN.)
BIAS CAPACITOR INPUT CAPACITOR OUTPUT CAPACITOR
V
C
OUT(T)
CIN CL
BIAS
0.5V～1.8V 1.0μF 1.0μF 2.2μF
BIAS
, CIN, CL.
BIAS
) between the V
BIAS
pin and the VSS pin. Also, please
BIAS
, CIN, CL ) which does not depend on bias or temperature too
■NOTES ON USE
1. For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings
be exceeded.
2. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output
current. Please keep the resistance low for the V
3. Please wire the C
4. Capacitances of these capacitors (C
, CIN and CL as close to the IC as possible.
BIAS
, C
BIAS
temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR
influence.
5. When it is used in a quite small input / output dropout voltage, output may go into unstable operation. Please test it
thoroughly before using it in production.
6. Torex places an importance on improving our products and their reliability.
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in
their systems
, VIN and VSS wiring in particular.
BIAS
) are decreased by the influences of bias voltage and ambient
IN, CL
Series
7/29
XC6602 Series
■TEST CIRCUITS
●Circuit ①
●Circuit ②
●Circuit ③
●Circuit ④
V
V
C
BIAS
1.0μF
C
IN
1.0μF
A
V
V
CE
V
BIAS
V
IN
OUT
V
SS
C
2.2μF
L
A
V
R
L
8/29
■TEST CIRCUITS (Continued)
●Circuit ⑤ (Timing Chart)
XC6602 Series, Type A XC6602 Series, Type B
XC6602
Series
9/29
XC6602 Series
■ TYPICAL PERFORMANCE CHARACTERISTICS
* Unless otherwise stated, V
BIAS=VCE
(1) Output Voltage vs. Output Current (2) Output Voltage vs. Bias Voltage
XC6602x051MR-G
0.6
0.5
(V)
OUT
0.4
0.3
VIN=0.8V
VIN=1.0V
0.2
0.1
Output Voltage: V
0.0
00.511.5
Output Current: I
XC6602x121MR-G
1.4
1.2
(V)
OUT
1.0
0.8
VIN=1.5V
VIN=1.7V
0.6
0.4
Output Voltage: V
0.2
0.0
00.5 11.5
Output Current: I
XC6602x181MR-G
2.0
(V)
1.5
OUT
1.0
VIN=2.1V
VIN=2.3V
0.5
Output Voltage: V
0.0
00.511.5
Output Current: I
* Mount conditions affect heat dissipation. Thermal
shutdown may start to operate before reaching the
current limit.
10/29
=3.6V, VIN=V
(A)
OUT
(A)
OUT
(A)
OUT
OUT(T)
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
XC6602x051xR-G
0.6
(V)
0.5
OUT
0.4
0.3
0.2
0.1
Output Voltage: V
0.0
0123456
Bias Voltage: V
XC6602x121xR-G
1.4
1.2
(V)
OUT
1.0
0.8
0.6
0.4
0.2
Output Voltage: V
0.0
0123456
Bias Voltage: V
XC6602x181xR-G
2.0
1.8
(V)
1.6
OUT
1.4
1.2
1.0
0.8
0.6
0.4
Output Voltage: V
0.2
0.0
0123456
Bias Voltage: V
(V)
BIAS
(V)
BIAS
IOUT=0mA
IOUT=1mA
IOUT=100m A
(V)
BIAS
IOUT=0mA
IOUT=1mA
IOUT=100mA
IOUT=0mA
IOUT=1mA
IOUT=100m A
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
BIAS=VCE
=3.6V, VIN=V
OUT(T)
+0.3V, I
(4) Dropout Voltage vs. Output Current (3) Output Voltage vs. Input Voltage
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
XC6602x051xR-G
XC6602x121MR-G
0.6
0.5
(V)
OUT
0.4
0.3
IOUT=0mA
IOUT=1mA
IOUT=100mA
0.2
0.1
Output Voltage: V
0.0
0123
Input Voltage: V
(V)
IN
250
200
150
VBIAS=3.0V
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V
100
50
Dro pout Voltage : Vdif(mV)
0
0 200 400 600 800 1000
Output Current: I
OUT
(mA)
XC6602x121xR-G
XC6602xxx1MR-G
1.4
1.2
(V)
OUT
1.0
0.8
0.6
IOUT=0mA
IOUT=1mA
IOUT=100mA
0.4
Output Voltage: V
0.2
0.0
0123
Input Voltage: V
(V)
IN
XC6602x181xR-G
350
300
250
Ta=-40℃
Ta=25℃
Ta=85℃
200
150
100
50
Dro pout Voltage : Vdif(mV)
0
123456
(*1)
(V)
V
GS
(*1)
VGS is a Gate –Source voltage of the driver transistor that is defined as
- V
the value of V
BIAS
OUT(E)
.
A value of the dropout voltage is determined by the value of the V
2.0
1.8
(V)
1.6
OUT
1.4
1.2
1.0
0.8
0.6
0.4
Output Voltage: V
0.2
IOUT=0mA
IOUT=1mA
IOUT=100mA
0.0
0123
Input Voltage: V
(V)
IN
XC6602
Series
I
=1A
OUT
.
GS
11/29
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
XC6602x051xR-G
160
140
(μA)
BIA S
120
100
80
60
40
20
Su pply Bias Curren t: I
0
0123456
XC6602x121xR-G
160
140
(μA)
BIAS
120
100
80
60
40
20
Supply Bias Curren t: I
0
0123456
XC6602x181xR-G
160
140
(μA)
BIAS
120
100
80
60
40
20
Su pply Bias Curren t: I
0
0123456
12/29
BIAS=VCE
Bias Voltage: V
Bias Voltage: V
Bias Voltage: V
=3.6V, VIN=V
CIN=C
BIAS=CL
, I
V
CE=VBIAS
Ta=-40℃
Ta=25℃
Ta=85℃
(V)
BIAS
CIN=C
BIAS=CL
V
CE=VBIAS, IOUT
Ta=-40℃
Ta=25℃
Ta=85℃
(V)
BIAS
CIN=C
BIAS=CL
, I
V
CE=VBIAS
Ta=-40℃
Ta=25℃
Ta=85℃
(V)
BIAS
=OPEN
OUT
=OPEN
=OPEN
OUT
OUT(T)
=0mA
=0mA
=0mA,
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
(6) Supply Input Current vs. Input Voltage (5) Supply Bias Current vs. Bias Voltage
XC6602x051xR-G
20
(μA)
IN
15
10
5
Su pply In pu t Curren t: I
0
00.511.522.53
Input Voltage: V
(V)
IN
XC6602x121xR-G
20
(μA)
IN
15
10
5
Su pply In pu t Cur ren t: I
0
00.511.522.53
Input Voltage: V
(V)
IN
XC6602x181xR-G
20
(μA)
IN
15
10
5
Su pply In pu t Cur ren t: I
0
00.511.522.53
Input Voltage: V
(V)
IN
CIN=C
BIAS=CL
Ta=-40℃
Ta=25℃
Ta=85℃
CIN=C
BIAS=CL
Ta=-40℃
Ta=25℃
Ta=85℃
CIN=C
BIAS=CL
Ta=-40℃
Ta=25℃
Ta=85℃
=OPE N
I
OUT
=OPE N
I
OUT
=OPE N
I
OUT
=0mA
=0mA
=0mA
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
BIAS=VCE
=3.6V, VIN=V
OUT(T)
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
(8) Supply Bias Current vs. Ambient Temperature (7) Output Voltage vs. Ambient Temperature
XC6602x051ｘR-G
0.52
(V)
0.51
OUT
IOUT=1mA
IOUT=100mA
0.5
0.49
Output Voltage: V
0.48
-50 0 50 100
Ambient Temperature: Ta(℃)
XC6602x121ｘR-G
160
(μA)
140
BIAs
120
100
80
60
Su pply Bias Curren t: I
40
-50 0 50 100
1.22
(V)
1.21
OUT
IOUT=1mA
IOUT=100mA
1.2
1.19
Output Voltage: V
1.18
-50 0 50 100
Ambient Temperature: Ta(℃)
160
(μA)
140
BIAs
120
100
80
60
Su pply Bias Curre nt: I
40
-50 0 50 100
XC6602x181ｘR-G
1.82
(V)
1.81
OUT
IOUT=1mA
IOUT=100mA
1.8
160
(μA)
140
BIAs
120
100
XC6602x051ｘR-G
CIN=C
Ambient Temperature: Ta(℃)
XC6602x121ｘR-G
CIN=C
Ambient Temperature: Ta(℃)
XC6602x181ｘR-G
CIN=C
BIAS=CL
BIAS=CL
BIAS
1.79
Output Voltage: V
1.78
-50 0 50 100
Ambient Temperature: Ta(℃)
80
60
Supply Bias Current: I
40
-50 0 50 100
Ambient Temperature: Ta(℃)
=OPE N
I
=0mA
OUT
=OPE N
I
=0mA
OUT
= CL=OPE N
I
=0mA
OUT
XC6602
Series
13/29
A
A
A
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
(9) Supply Input Current vs. Ambient Temperature
XC6602x051ｘR-G
3
(μA)
IN
2
1
Supply Input Current: I
0
-50 0 50 100
Ambient Temperature: Ta(℃)
XC6602x121ｘR-G
12
(μA)
10
IN
8
6
4
2
Supply Input Current: I
0
-50 0 50 100
Ambient Temperature: Ta(℃)
XC6602x181ｘR-G
16
(μA)
14
IN
12
10
8
6
Supply Input Current: I
4
-50 0 50 100
Ambient Temperature: Ta(℃)
14/29
BIAS=VCE
=3.6V, VIN=V
CIN=C
BIAS=CL
CIN=C
BIAS=CL
CIN=C
BIAS=CL
OUT(T)
=OPEN
I
=0m
OUT
=OPEN
I
=0m
OUT
=OPEN
I
=0m
OUT
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
A
A
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
BIAS=VCE
=3.6V, VIN=V
OUT(T)
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
(11) Input Transient Response (10) Bias Transient Response
XC6602x051xR-G
V
=3.0V→4.0V(tr=tf=5μs), I
BIAS
C
BIAS
OUT
=OPEN
=100mA
0.58
5
(V)
0.56
OUT
0.54
0.52
4
(V)
BIAS
3
2
0.58
(V)
0.56
OUT
0.54
0.52
XC6602x051xR-G
V
=0.8V→1.8V(tr=tf=5μs), I
IN
CIN=OPEN
=100m
OUT
3
2
1
0
0.5
Output Voltage: V
0.48
Time (20 0μs/ div)
1
Bias Voltage: V
0
0.5
Output Voltage: V
0.48
Time (200μs/div)
-1
-2
1.28
XC6602x121xR-G
V
=3.0V→4.0V(tr=tf=5μs) I
BIAS
C
BIAS
OUT
=OPEN
=100mA
5
1.28
XC6602x121xR-G
V
=1.5V→2.5V(tr=tf=5μs), I
IN
CIN=OPEN
=100mA
OUT
3.5
(V)
1.26
OUT
1.24
1.22
4
(V)
BIAS
3
2
(V)
1.26
OUT
1.24
1.22
2.5
1.5
0.5
1.2
Output Voltage: V
1.18
Time (20 0μs/ div)
XC6602x181xR-G
V
=2.1V→3.1V(tr=tf=5μs), I
IN
1.88
(V)
1.86
OUT
1.84
1.82
BIAS
OUT
=OPEN
=100mA
1
Bias Voltage: V
0
5
4
(V)
BIAS
3
2
1.2
Output Voltage: V
1.18
Time (20 0μs/ div)
XC6602x181xR-G
V
=3.6V→4.6V(tr=tf=5μs) I
BIAS
C
1.88
(V)
1.86
OUT
1.84
1.82
CIN=OPEN
=100m
OUT
-0.5
-1.5
4
3
2
1
1.8
Output Voltage: V
1.78
Time (20 0μs/ div)
1
Bias Voltage: V
0
1.8
Output Voltage: V
1.78
Time (200μs/div)
0
-1
(V)
IN
Input Voltage: V
(V)
IN
Input Voltage: V
(V)
IN
Input Voltage: V
XC6602
Series
15/29
)
)
)
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
(12) Load Transient Response
XC6602x051xR-G
0.66
(V)
0.62
OUT
0.58
0.54
0.5
Output Voltage: V
0.46
Time (200μs/div)
XC6602x121xR-G
1.36
(V)
1.32
OUT
1.28
1.24
1.2
Output Voltage: V
1.16
Time (200μs/div)
XC6602x181xR-G
1.96
(V)
1.92
OUT
1.88
1.84
1.8
Output Voltage: V
1.76
Time (200μs/div)
16/29
BIAS=VCE
I
OUT
Output Current
Output Voltage
I
OUT
Output Current
Output Voltage
I
OUT
Output Current
Output Voltage
=3.6V, VIN=V
=1mA⇔100mA(tr=tf=5μs
=1mA⇔100mA(tr=tf=5μs
=1mA⇔100mA(tr=tf=5μs
0.2
0.1
0
-0.1
-0.2
-0.3
0.2
0.1
0
-0.1
-0.2
-0.3
0.2
0.1
0
-0.1
-0.2
-0.3
OUT(T)
(A)
OUT
Outpur Current: I
(A)
OUT
Outpur Current: I
(A)
OUT
Outpur Current: I
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
)
)
A
)
)
)
)
A
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
BIAS=VCE
=3.6V, VIN=V
OUT(T)
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
(13) CE Input Voltage Response
XC6602A051xR-G
VCE=0V→3.6V(tr=5μs
I
=100mA
OUT
XC6602A051xR-G
VCE=0V→3.6V(tr=5μs
I
=100mA
OUT
4
(V)
2
CE
CE Input Voltage
0
-2
Input Current
200
150
100
50
4
(V)
2
(mA)
IN
CE
CE Input Voltage
0
200
150
100
Rush Current
-2
50
I
OUT
0
-50
=100mA
Input Current: I
-4
CE In put Voltage: V
Input Current
-6
0
-50
Time (50μs/div)
XC6602A121xR-G
VCE=0V→3.6V(tr=5μs
I
=100m
OUT
-4
CE Input Voltage: V
-6
Time (200μs/div)
XC6602A121xR-G
VCE=0V→3.6V(tr=5μs
4
(V)
2
CE
CE Input Voltage
0
-2
-4
CE Input Voltage: V
-6
Time (200μs/div)
XC6602A181xR-G
Input Current
VCE=0V→3.6V(tr=5μs
4
(V)
2
CE
CE Input Voltage
0
-2
-4
CE Input Voltage: V
Input Current
-6
Time (200μs/div)
200
150
100
4
(V)
2
(mA)
IN
CE
CE Input Voltage
0
200
150
100
Rush Current
50
0
-50
-2
Input Current: I
-4
CE Input Voltage: V
Input Current
-6
50
0
-50
Time (50μs/div)
XC6602A181xR-G
VCE=0V→3.6V(tr=5μs
I
I
=100m
OUT
200
150
100
50
0
-50
(mA)
IN
Input Current: I
4
(V)
2
CE
0
Rush Current
CE Input Voltage
-2
-4
CE Input Voltage: V
Input Current
-6
OUT
=100mA
200
150
100
50
0
-50
Time (50μs/div)
(mA)
IN
Input Current: I
(mA)
IN
Input Current: I
(mA)
IN
Input Current: I
XC6602
Series
17/29
F
F
A
F
F
A
F
F
A
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
BIAS=VCE
(13)CE Input Voltage Response (Continued)
XC6602A051xR-G
VCE=0V→3.6V(tr=5μs), I
4
(V)
2
CE
CE Input Voltage
0
-2
-4
CE Input Voltage: V
-6
Time (200μs/div)
4
(V)
2
CE
XC6602A121xR-G
VCE=0V→3.6V(tr=5μs), I
CE Input Voltage
0
-2
-4
CE Input Voltage: V
-6
Time (200μs/div)
XC6602A181xR-G
VCE=0V→3.6V(tr=5μs), I
4
(V)
2
CE
CE Input Voltage
0
-2
Input Current
-4
CE Input Voltage: V
-6
Time (200μs/div)
18/29
=3.6V, VIN=V
Input Current
Input Current
OUT
CL=10μ
=100mA
OUT
CL=10μ
OUT
CL=10μ
=100mA
400
300
200
100
0
-100
400
300
200
100
0
-100
=100m
400
300
200
100
0
-100
OUT(T)
(mA)
IN
Input Current: I
(mA)
IN
Input Current: I
(mA)
IN
Input Current: I
+0.3V, I
=1mA, C
OUT
(V)
CE
-2
-4
CE Input Voltage: V
-6
(V)
CE
-2
-4
CE Input Voltage: V
-6
(V)
CE
-2
-4
CE Input Voltage: V
-6
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
XC6602A051xR-G
VCE=0V→3.6V(tr=5μs), I
4
2
CE Input Voltage
0
CL=10μ
=100m
OUT
400
300
200
Rush Current
100
Input Current
0
-100
Time (50μs/div)
XC6602A121xR-G
VCE=0V→3.6V(tr=5μs), I
4
2
0
CE Input Voltage
Rush Current
CL=10μ
=100mA
OUT
400
300
200
100
Input Current
0
-100
Time (50μs/div)
XC6602A181xR-G
VCE=0V→3.6V(tr=5μs), I
4
2
0
CE Input Voltage
Rush Current
CL=10μ
=100m
OUT
400
300
200
100
Input Current
0
-100
Time (50μs/div)
(mA)
IN
Input Current: I
(mA)
IN
Input Current: I
(mA)
IN
Input Current: I
)
A
)
)
)
)
)
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
BIAS=VCE
=3.6V, VIN=V
OUT(T)
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
(14) CE Rising Response Time
XC6602A051xR-G
VCE=0V→3.6V(tr=5μs
XC6602B051xR-G
I
=100m
OUT
VCE=0V→3.6V(tr=5μs
I
=100mA
OUT
4
(V)
2
CE
CE Input Voltage
0
1.6
1.2
0.8
4
(V)
OUT
(V)
2
CE
CE Input Voltage
0
1.6
1.2
0.8
-2
Output Voltage
-4
CE Input Voltage: V
-6
Time (200μs/div)
XC6602A121xR-G
VCE=0V→3.6V(tr=5μs
4
(V)
2
CE
CE Input Voltage
0
-2
-4
CE Input Voltage: V
Output Voltage
-6
Time (200μs/div)
I
OUT
=100mA
2
1.5
1
0.5
0
-0.5
0.4
0
-0.4
-2
Output Voltage: V
-4
CE Input Voltage: V
Output Voltage
-6
0.4
0
-0.4
Time (40μs/div)
XC6602B121xR-G
VCE=0V→3.6V(tr=5μs
I
=100mA
OUT
4
(V)
OUT
(V)
2
CE
0
CE Input Voltage
Output Voltage
-2
Output Voltage: V
-4
CE Input Voltage: V
-6
2
1.5
1
0.5
0
-0.5
Time (40μs/div)
4
(V)
2
CE
0
-2
-4
CE Input Voltage: V
-6
XC6602A181xR-G
CE Input Voltage
Output Voltage
Time (200μs/div)
VCE=0V→3.6V(tr=5μs
I
=100mA
OUT
4
3
2
1
0
-1
4
(V)
(V)
OUT
2
CE
0
-2
-4
Output Voltage: V
CE In put Vo ltage: V
-6
XC6602B181xR-G
CE Input Voltage
Output Voltage
Time (40μs/div)
VCE=0V→3.6V(tr=5μs
I
=100mA
OUT
4
3
2
1
0
-1
XC6602
Series
(V)
OUT
Output Voltage: V
(V)
OUT
Output Voltage: V
(V)
OUT
Output Voltage: V
19/29
A
A
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
(15) VIN Rising Response Time
XC6602A051xR-G
1
0.5
(V)
IN
0
-0.5
Input Voltage: V
-1
-1.5
Time (200μs/div)
2
XC6602A121xR-G
V
1
(V)
IN
0
-1
Input Voltage: V
-2
-3
Time (200μs/div)
XC6602A181xR-G
3
2
(V)
IN
1
0
Input Voltage: V
-1
-2
Time (200μs/div)
20/29
BIAS=VCE
V
=0V→0.8V(tr=5μs), I
IN
=0V→1.5V(tr=5μ), I
IN
Output Voltage
V
=0V→2.1V(tr=5μs), I
IN
=3.6V, VIN=V
Input Voltage
Output Voltage
CIN=OPEN
=100m
OUT
Input Voltage
CIN=OPEN
OUT
Input Voltage
Output Voltage
CIN=OPEN
=100mA
OUT
=100m
1.6
1.2
0.8
0.4
0
-0.4
2
1.5
1
0.5
0
-0.5
4
3
2
1
0
-1
OUT(T)
+0.3V, I
(V)
OUT
Output Voltage: V
(V)
OUT
Output Voltage: V
(V)
OUT
Output Voltage: V
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
A
A
A
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, V
BIAS=VCE
=3.6V, VIN=V
OUT(T)
+0.3V, I
=1mA, C
OUT
= CIN=1.0μF, CL=2.2μF, Ta=25℃
BIAS
(16) Bias Voltage Ripple Rejection Rate
(17) Input Voltage Ripple Rejection Rate
(10)バイアス過渡応答特性例
XC6602x051xR-G
=3.6VDC+0.2Vp-p
V
BIAS
C
AC, IOUT
BIAS
=OPEN
=100m
XC6602x051xR-G
=0.8VDC+0.2Vp-pAC, I
V
IN
CIN=OPEN
OUT
100
90
80
70
(dB)
60
50
40
BIAS _PSRR
V
30
20
10
0
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
100
90
80
70
60
(dB)
50
IN _PSRR
40
V
30
20
10
0
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
100
90
80
70
(dB)
60
50
40
BIAS_ PSRR
V
30
20
10
0
0.01 0.1 1 10 100 1000 10000
XC6602x121xR-G
V
BIAS
=3.6VDC+0.2Vp-pAC, I
XC6602x121xR-G
C
OUT
BIAS
=OPEN
=100m
V
=1.5VDC+0.2Vp-pAC, I
IN
CIN=OPEN
OUT
100
90
80
70
60
(dB)
50
40
IN _PSRR
V
30
20
10
0
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
Frequency (kHz)
100
90
80
70
(dB)
60
50
40
BIAS_ PSRR
V
30
20
10
0
0.01 0.1 1 10 100 1000 10000
XC6602x181xR-G
V
BIAS
=3.6VDC+0.2Vp-pAC, I
XC6602x181xR-G
C
OUT
BIAS
=OPEN
=100m
V
=2.1VDC+0.2Vp-pAC, I
IN
CIN=OPEN
OUT
100
90
80
70
60
(dB)
50
40
IN _PSRR
V
30
20
10
0
0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
Frequency (kHz)
XC6602
Series
=100mA
=100mA
=100mA
21/29
XC6602 Series
■PACKAGING INFORMATION
2.0±0.05
0.6MAX
0.25±0.05
1.0±0.1
0.70±0.05
(0.4)
0.8 MIN
2.5±0.10.8 MIN
4.35 MAX
(0.1)
1.5±0.1
5°
5°
SOT-26W
(unit : mm)
+0.1
0.4
-0.05
6
1
(0.95)
2.9±0.2
5
2
1.9±0.2
4
0～0.1
3
0.15
+0.1
-0.05
22/29
■PACKAGING INFORMATION (Continued)
●USP-6C Reference Pattern Layout ●USP-6C Reference Metal Mask Design
XC6602
Series
23/29
XC6602 Series
■PACKAGING INFORMATION (Continued)
● USP-6C Power Dissipation
Power dissipation data for the USP-6C is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
1. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient: Natural convection
Soldering: Lead (Pb) free
Board: Dimensions 40 x 40 mm (1600 mm
Copper (Cu) traces occupy 50% of the board area
Material: Glass Epoxy (FR-4)
Thickness: 1.6 mm
Through-hole: 4 x 0.8 Diameter
2. Power Dissipation vs. Ambient temperature
Board Mount (Tj max = 125℃)
In top and back faces
Package heat-sink is tied to the copper traces
Ambient Temperature（℃） Power Dissipation Pd（mW） Thermal Resistance (℃/W)
2
in one side)
Evaluation Board (Unit: mm)
許容損失Pd（mW）
Power Dissipation: Pd (mW)
24/29
25 1000
85 400
Pd-Ta特性グラフ
Pd vs. Ta
1200
1000
800
600
400
200
0
25 45 65 85 105 125
Ambient Temperature: Ta (℃)
周辺温度Ta（℃）
100.00
p
(
)
XC6602
Series
■PACKAGING INFORMATION (Continued)
● SOT-26W Power Dissipation
Power dissipation data for the SOT-26W is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
1. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient: Natural convection
Soldering: Lead (Pb) free
Board: Dimensions 40 x 40 mm (1600 mm
Copper (Cu) traces occupy 50% of the board area
Material: Glass Epoxy (FR-4)
Thickness: 1.6 mm
Through-hole: 4 x 0.8 Diameter
2. Power Dissipation vs. Ambient temperature
Board Mount (Tj max = 125℃)
Ambient Temperature（℃） Power Dissipation Pd（mW） Thermal Resistance (℃/W)
In top and back faces
Package heat-sink is tied to the copper traces
(Board of SOT-26 is used.)
2
in one side)
評価基板レイアウト（単位：mm）
Evaluation Board (Unit: mm)
25 600
85 240
Pd-Ta特性グラフ
Pd vs. Ta
700
mW
600
166.67
500
400
ation: Pd
300
200
100
許容損失Pd（mW）
Power Dissi
0
25 45 65 85 105 125
Ambient Temperature: Ta (℃)
周辺温度Ta（℃）
25/29
XC6602 Series
■PACKAGING INFORMATION (Continued)
● SOT-89-5 Power Dissipation
Power dissipation data for the SOT-89-5 is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as one of reference data taken in the described condition.
1. Measurement Condition (Reference data)
Condition: Mount on a board
Ambient: Natural convection
Soldering: Lead (Pb) free
Board: Dimensions 40 x 40 mm (1600 mm
Copper (Cu) traces occupy 50% of the board area
Material: Glass Epoxy (FR-4)
Thickness: 1.6 mm
Through-hole: 5 x 0.8 Diameter
2. Power Dissipation vs. Ambient temperature
Board Mount (Tj max = 125℃)
In top and back faces
Package heat-sink is tied to the copper traces
Ambient Temperature（℃） Power Dissipation Pd（mW） Thermal Resistance (℃/W)
2
in one side)
Evaluation Board (Unit: mm)
許容損失Pd（mW）
Power Dissipation: Pd (mW)
26/29
25 1300
85 520
Pd-Ta特性グラフ
Pd vs. Ta
1400
1200
1000
800
600
400
200
0
25 45 65 85 105 125
Ambient Temperature: Ta (℃)
周辺温度Ta（℃）
76.92
r
■MARKING RULE
① represents product series
MARK PRODUCT SERIES
P
R XC6602B****-G
② represents voltage range
MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V)
A 0.5 N 1.5
B 0.6 P 1.6
C 0.7 R 1.7
D 0.8 S 1.8
E 0.9 T -
F 1.0 U H 1.1 V -
K 1.2 X -
L 1.3 Y M 1.4 Z -
③④ represents production lot numbe
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, B1 to ZZ in order.
(G, I, J, O, Q, W excluded)
*No character inversion used.
XC6602A****-G
XC6602
Series
SOT-26W
64
5
① ② ③ ④
123
27/29
XC6602 Series
■MARKING RULE (Continued)
① represents product series
MARK PRODUCT SERIES
7
② represents regulator type
MARK PRODUCT SERIES
A
B XC6602B****-G
③ represents voltage range
XC6602******-G
XC6602A****-G
SOT-89-5
524
③①
②
123
MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V)
0 0.5 A 1.5 N -
1 0.6 B 1.6 P -
2 0.7 C 1.7 R -
3 0.8 D 1.8 S -
4 0.9 E - T -
5 1.0 F - U -
6 1.1 H - V -
7 1.2 K - X -
8 1.3 L - Y -
9 1.4 M - Z -
④⑤ represents production lot number
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, B1 to ZZ in order.
(G, I, J, O, Q, W excluded)
*No character inversion used.
28/29
USP-6C
⑤
④
1
④ ⑤
2
3
6
② ③①
5
4
XC6602
Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
29/29
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