Texas Instruments TRF2052PWR, TRF2052PW Datasheet

TRF2052
LOW-VOLTAGE 2-GHz SYNTHESIZER
SLWS066 – JULY 1998
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
D
3-V Power Supply Operation
D
D
Normal and Speed-Up Charge Pumps
D
Dual PLL: One RF and One IF
D
Additional, Directly Accessible Power-Down Modes
description
The TRF2052 is a dual-channel, low-power, phase-locked loop (PLL) frequency synthesizer component designed specifically for digitally en­hanced cordless telephone (DECT) applications. The device is suitable for a variety of applications up through 2 GHz. A speed-up integral charge pump is used for fast channel switching. The simple serial interface is compatible with the extended performance mode (EPM) of other devices in Texas Instruments’ synthesizer family.
Along with the external loop filters, the TRF2052 provides all functions for voltage-controlled oscillators (VCO) in a dual-PLL frequency synthesizer system. A main channel is provided for RF frequencies and an auxiliary channel for IF frequencies. The current-output charge pumps directly drive passive RC filter networks, to generate VCO control voltages. Fast main-channel frequency switching is achieved with a charge pump arrangement that increases the current drive and alters the loop-filter frequency response during a portion of the switching interval.
The speed-up mode is controlled by the serial interface strobe signal, which goes high when a new frequency is loaded. At this time, the internal speed-up timer is activated and it enables the speed-up mode into the speed-up timer for the preprogrammed duration. During speed-up mode, the charge pump current to the external loop filter can be changed in two ways. First, the main charge pump current can be increased. Second, an additional integral charge pump can be separately and directly connected to the external loop-filter capacitor to further decrease the loop-filter charge and discharge times.
Caution. These devices have limited built-in gate protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
CLOCK
DATA
STROBE
VSS RFINP RFINN
VCCP
REFIN
RA
AUXIN
VDD NENM LOCK NENA RN VDDA PHP PHI VSSA PHA
PW PACKAGE
(TOP VIEW)
TRF2052 LOW-VOLTAGE 2-GHz SYNTHESIZER
SLWS066 – JULY 1998
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
functional block diagram
Serial Control Shift Register
Control and Selection
Internal Control Register
Band Gap
and Bias
DATA
CLOCK
STROBE
NENM
NENA
Main Divider
N
Main Phase
Detector
MCP
1/–1
Speed-Up
Counter
G
Main
Charge Pump
CN
CL
Intergral
Charge Pump
CK
SELECT
SELECT
1 2 4 8
Reference
Divider
M
SM
2 Lock
Detector
Auxiliary
Divider
NA
Auxiliary
Phase Detector
ACP
1/–1
4/1
PA
Auxiliary
Charge Pump
PHP RN
PHI
LOCK
RA PHA
RFINP RFINN
REFIN
AUXIN
2
1
3 19 17
3
5 6
8
10
14 16
13
18
9
11
18
12
12
8
8
2
4
SA
2
Terminal Functions
TERMINAL
NAME NO.
DESCRIPTION
AUXIN 10 Auxiliary channel RF input CLOCK 1 Serial interface clock signal DATA 2 Serial interface data signal LOCK 18 Lock detector output NENA 17 Enable signal for the auxiliary channel/main channel/open loop. See modes of operation logic table. Active low NENM 19 Enable signal for the auxiliary channel/main channel/open loop. See modes of operation logic table. Active low PHA 11 Auxiliary charge pump output PHI 13 Integral charge pump output PHP 14 Main (proportional) charge pump output RA 9 Resistor to VSSA sets auxiliary charge pump current REFIN 8 Reference frequency input signal RFINN 6 Prescaler negative RF input RFINP 5 Prescaler positive RF input RN 16 Resistor to VSSA sets main charge pump current STROBE 3 Serial interface load signal VCCP 7 Prescaler positive supply voltage VDD 20 Digital supply voltage VDDA 15 Analog supply voltage VSS 4 Digital/prescaler ground VSSA 12 Analog ground
TRF2052
LOW-VOLTAGE 2-GHz SYNTHESIZER
SLWS066 – JULY 1998
3
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage range (See Note 1) –0.6 to 4.7 Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, logic signals –0.6 to 4.7 Vdc. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD protection, all pins, human body model 1 kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NOTE 1: Voltage values are with respect to VSSA.
recommended operating conditions
MIN MAX UNIT
Supply voltage, VCCP, VDD, VDDA 2.7 3.3 V Operating free-air temperature, T
A
–10 55 °C
dc electrical characteristics over full range of operating conditions, typical values are at VCCP = VDD = VDDA = 3 V, T
A
= 25°C (unless otherwise noted)
supply current
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Average operational supply current (see Note 2)
EM = EA = 1 |I
PHA
| = 1 mA
|I
PHP S
| = 2.5 mA
ES = 0 |I
PHP N
| = 0.5 mA
|
IPHI
| = 0 mA
11.4 mA
NOTE 2: Charge pump output current not included.
digital interface
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OH
High-level output voltage (LOCK) IOH = 1 mA VCC – 0.5 V
V
OL
Low-level output voltage (LOCK) IOL = –1 mA 0.5 V
V
IH
High-level input voltage (DATA, CLOCK, STROBE, NENA, NENM) IIH = 10 µA VCC – 0.5 V
V
IL
Low-level input voltage (DATA, CLOCK, STROBE, NENA, NENM) IIL = 10 µA 0.5 V
ac electrical characteristics over full range of operating conditions, typical values are at VCCP = VDD = VDDA = 3 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RF input frequency 0.1 2.0 GHz Differential RF input voltage –16 –3 dBm Reference input frequency 13.8 MHz Reference input voltage 0.3 V
pp
Auxiliary input frequency (see Note 3) 150 MHz Auxiliary input voltage 0.2 V
pp
NOTE 3: Used with predivider (1/4)
TRF2052 LOW-VOLTAGE 2-GHz SYNTHESIZER
SLWS066 – JULY 1998
4
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
charge pump output currents
The steepness of the phase detector charge-pump chains is determined by external resistors between the dedicated pins RA and RN and ground, as well as by user programmable variables. The charts that follow indicate how the charge-pump peak currents can be set by the external resistors and the control variables.
auxiliary charge pump
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|I
PHA
| Open loop mode (NENA = 1) 0 vV
PHA
vV
DDA
10 pA
|I
PHA
| Closed loop mode (NENA = 0)
0.5 V vV
PHA
vV
DDA
– 0.5 V,
RA w = 18 k
20 × 1.25/RA[k] mA
main charge pump
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|I
PHM_N
| Normal mode
0.5 V vV
PHP
vV
DDA
– 0.5 V,
18.75/(RN[k] + 0.75) × CN/256
mA
|I
PHM_S
| Speed-up mode (see Note 4)
R
N
w = 18
k
|I
PHM_N
| × (1 + 2CL + 1) mA
4. The maximum allowable current is 12 mA. It is recommended to use the speedup mode only before the PLL is locked. Switching between speedup and normal modes as well as changing the current setting factor CN, under PLL operation, may cause disturbances in the VCO control voltage.
integral charge pump
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|I
PHI_N
| Normal mode 0 vV
PHI
vV
DDA
0 mA
|I
PHI_S
| Speed-up mode (see Note 5)
0.5 V vV
PHI
vV
DDA
– 0.5 V, RN w = 18 kΩ, |I
PHM_S
| v 16 mA
|I
PHM_N
| × 2CL + 1 × CK mA
5. Maximum allowable current is 24 mA
The instantaneous values of the charge pump currents are related to the phase error by:
I
PH_inst
+
Q
error
2
p
I
PH_peak
modes of operation
CHIP MODE NENM NENA ACTIVE STAGES
Both synthesizers on 0 0 Everything on Main synthesizers on 0 1 Only auxiliary charge pump set to triple state; everything else working Auxiliary synthesizer on 1 0 Main loop disabled, auxiliary loop working Shutdown 1 1 All off
Enable signals, NENM and NENA, are active low.
timing requirements, serial data interface (see Figure 1)
PARAMETER MIN MAX UNIT
f
(CLOCK)
Clock frequency 10 MHz
t
w(CLKHI)
Clock high-time pulse width, Clock high 30 ns
t
w(CLKLO)
Clock low-time pulse width, Clock low 30 ns
t
su(D)
Set-up time, data valid before CLOCK 30 ns
t
h(D)
Hold time, data valid after CLOCK 30 ns
t
su(STROBE)
Set-up time, STROBE before CLOCK 30 ns
t
w(STROBEHI)
STROBE high-time pulse width, STROBE high 30 ns
t
w(STROBELO)
STROBE low-time pulse width, STROBE low 30 ns
(1)
TRF2052
LOW-VOLTAGE 2-GHz SYNTHESIZER
SLWS066 – JULY 1998
5
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
P ARAMETER MEASUREMENT INFORMATION
t
su(STROBE)
t
su(D)
t
h(D)
DATA
CLOCK
STROBE
t
w(CLKH)
t
w(STROBEHI)
t
w(STROBELO)
f(CLOCK)
t
w(CLKLO)
Figure 1. Serial-Data Interface Timing
TRF2052 LOW-VOLTAGE 2-GHz SYNTHESIZER
SLWS066 – JULY 1998
6
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
serial control
The TRF2052 internal registers contain all the user programmable variables such as divider ratios, charge pump settings, etc. They are programmed using a three-wire (CLOCK, DATA, STROBE) serial interface.
At every rising slope of the CLOCK signal, the actual logical value on the DA TA pin is written into a 24-bit shift register. A rising slope on the STROBE pin causes the actual content of the shift register to be input as a control word.
The control word is, therefore, 24-bits long and the first incoming bit functions as the least significant bit (LSB), bit 0. If the most significant bit (MSB), bit 23, is 1, the word functions as control word A. If the MSB is 0, bits 20 to 22 become address bits, which label the words as control word B through E, respectively . To fully program the synthesizer, four words must be sent: A, B, C, and D. Word E is for test purposes only.
The position of the individual variables within the control words is illustrated in Figure 2. T able 1 briefly describes their functions. The G parameter, which specifies the duration of the speed-up mode in reference divider cycles, splits into most significant (G2) and least significant (G1) nibbles.
0G1 N
1 0 0 0 CN CK CL
M C P
1001 NA
1 0 1 0 NR SM SA
1111
MSB
Last In
LSB
First In
A
B
C
D
E
E
M
E A
TST<10:0>
23 22 21 20 1918 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
nc
G2
A C P
P A
nc
ESP
M
nc
Figure 2. Serial Word Format
TRF2052
LOW-VOLTAGE 2-GHz SYNTHESIZER
SLWS066 – JULY 1998
7
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
Table 1. Function Table
SYMBOL BITS FUNCTION
N 18 Overall main divider integer division ratio CN 8 Binary current setting factor for main charge pumps G2 4 MS bits for the speed-up mode duration (number of reference divider cycles) G1 4 LS bits for the speed-up mode duration (number of reference divider cycles) CK 4 Binary acceleration factor for integral charge pump current CL 2 Binary acceleration factor for increase in main charge pump current during speed-up mode MCP 1 Main charge pump polarity ACP 1 Auxiliary charge pump polarity NA 12 Auxiliary divider ratio PA 1 Auxiliary prescaler select:
0 = divide by 4
1 = divide by 1 NR 12 Reference divider ratio SM 2 Reference select for main phase detector EM 1 Main divider enable flag SA 2 Reference select for auxiliary phase detector EA 1 Auxiliary divider enable flag ES 1 Speed-up mode standby control:
0 = speed-up charge pump switches off completely if no fast mode
1 = speed-up charge pump always in standby PM 1 Phase detector mode. Change between two modes for reset pulse generation:
0 = analog internal generated delay
1 = high-pulse duration for REF-CLOCK
RF inputs
The differential main divider input has a resistance of several kW and can be matched to the system impedance by an external resistor. To form a single ended input, any one of the input pins can be grounded by a blocking capacitor.
The auxiliary channel RF and reference inputs have a high resistance, as well, and are single ended. If needed, matching can be accomplished with an external resistor.
enabling the PLLs
Both PLLs can be enabled and disabled independently , either by the serial control variables EM and EA or by the digital inputs pins NENM and NENA.
The serial control variables and the hardware signal NENM disable the charge pump and the divider of the corresponding loop, while NENA affects the auxiliary charge pump output only . This helps to avoid spikes that might occur after re–enabling the auxiliary loop by the serial interface.
TRF2052 LOW-VOLTAGE 2-GHz SYNTHESIZER
SLWS066 – JULY 1998
8
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
MECHANICAL DATA
PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE
4040064/E 08/96
14 PIN SHOWN
Seating Plane
0,05 MIN
1,20 MAX
1
A
7
14
0,19
4,50 4,30
8
6,20
6,60
0,30
0,75 0,50
0,25
Gage Plane
0,15 NOM
0,65
M
0,10
0°–8°
0,10
PINS **
A MIN
A MAX
DIM
2,90
3,10
8
4,90
5,10
14
6,60
6,404,90
5,10
16
7,70
20
7,90
24
9,60
9,80
28
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice. C. Body dimensions do not include mold flash or protrusion not to exceed 0,15. D. Falls within JEDEC MO-153
IMPORTANT NOTICE
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TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements.
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Copyright 1998, Texas Instruments Incorporated
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