Texas Instruments TPS2815PWLE, TPS2815PWR, TPS2815P, TPS2815DR, TPS2814PWR Datasheet
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TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Industry-Standard Driver Replacement
D
25-ns Max Rise/Fall Times and 40-ns Max
Propagation Delay – 1-nF Load, V
CC
= 14 V
D
2-A Peak Output Current, VCC = 14 V
D
5-µA Supply Current — Input High or Low
D
4-V to 14-V Supply-Voltage Range; Internal
Regulator Extends Range to 40 V (TPS2811,
TPS2812, TPS2813)
D
–40°C to 125°C Ambient-Temperature
Operating Range
description
The TPS28xx series of dual high-speed MOSFET
drivers are capable of delivering peak currents of
2 A into highly capacitive loads. This performance
is achieved with a design that inherently
minimizes shoot-through current and consumes
an order of magnitude less supply current than
competitive products.
The TPS2811, TPS2812, and TPS2813 drivers
include a regulator to allow operation with supply
inputs between 14 V and 40 V. The regulator
output can power other circuitry, provided power
dissipation does not exceed package limitations. When the regulator is not required, REG_IN and REG_OUT
can be left disconnected or both can be connected to V
CC
or GND.
The TPS2814 and the TPS2815 have 2-input gates that give the user greater flexibility in controlling the
MOSFET. The TPS2814 has AND input gates with one inverting input. The TPS2815 has dual-input NAND
gates.
TPS28xx series drivers, available in 8-pin PDIP, SOIC, and TSSOP packages and as unmounted ICs, operate
over a ambient temperature range of –40°C to 125°C.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
INTERNAL
REGULATOR
LOGIC FUNCTION
SMALL
OUTLINE
(D)
PLASTIC
DIP
(P)
TSSOP (PW)
CHIP
FORM
(Y)
–40°C
Yes
Dual inverting drivers
Dual noninverting drivers
One inverting and one noninverting driver
TPS2811D
TPS2812D
TPS2813D
TPS2811P
TPS2812P
TPS2813P
TPS2811PWLE
TPS2812PWLE
TPS2813PWLE
TPS2811Y
TPS2812Y
TPS2813Y
to
125°C
No
Dual 2-input AND drivers, one inverting input on
each driver
Dual 2-input NAND drivers
TPS2814D
TPS2815D
TPS2814P
TPS2815P
TPS2814PWLE
TPS2815PWLE
TPS2814Y
TPS2815Y
The D package is available taped and reeled. Add R suffix to device type (e.g., TPS281 1DR). The PW package is only available left-end
taped and reeled and is indicated by the LE suffix on the device type (e.g., TPS2811PWLE).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1997, Texas Instruments Incorporated
1
2
3
4
8
7
6
5
REG_IN
1IN
GND
2IN
REG_OUT
1OUT
V
CC
2OUT
TPS2811, TPS2812, TPS2813 . . . D, P, AND PW
PACKAGES
(TOP VIEW)
1
2
3
4
8
7
6
5
1IN1
1IN2
2IN1
2IN2
GND
1OUT
V
CC
2OUT
TPS2814 . . . D, P, AND PW PACKAGES
(TOP VIEW)
1
2
3
4
8
7
6
5
1IN1
1IN2
2IN1
2IN2
GND
1OUT
V
CC
2OUT
TPS2815 . . . D, P, AND PW PACKAGES
(TOP VIEW)
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
functional block diagram
Regulator
1
2
4
3
REG_IN
1IN
2IN
GND
8
6
7
5
REG_OUT
V
CC
1OUT
2OUT
TPS2811
Regulator
1
2
4
3
REG_IN
1IN
2IN
GND
8
6
7
5
REG_OUT
V
CC
1OUT
2OUT
TPS2812
Regulator
1
2
4
3
REG_IN
1IN
2IN
GND
8
6
7
5
REG_OUT
V
CC
1OUT
2OUT
TPS2813
1
3
8
1IN1
2IN1
GND
6
7
5
V
CC
1OUT
2OUT
TPS2814
2
4
1IN2
2IN2
1
3
8
1IN1
2IN1
GND
6
7
5
V
CC
1OUT
2OUT
TPS2815
2
4
1IN2
2IN2
REG_IN
7.5 Ω
REG_OUT
regulator diagram (TPS2811, TPS2812,
TPS2813 only)
input stage diagram
To Drive
Stage
IN
V
CC
output stage diagram
V
CC
OUT
Predrive
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TPS28xxY chip information
This chip, when properly assembled, displays characteristics similar to those of the TPS28xx. Thermal
compression or ultrasonic bonding may be used on the doped aluminum bonding pads. The chip may be
mounted with conductive epoxy or a gold-silicon preform.
57
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax OPERATING TEMPERATURE = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
(7)
(6)
(1)
(5)
(2)
(3)
GND
1OUT
V
CC
REG_IN
1IN
TPS2811Y
TPS2812Y
TPS2813Y
REG_OUT
(8)
(4)
2IN
47
(1) (8)
(7)
(2)
(3)
(4)
(5)
(6)
2OUT
(6)
(5)
(1)
(4)
(2)
(8)
GND
1OUT
V
CC
1IN1
1IN2
TPS2814Y
(7)
(3)
2IN1
2OUT
2IN2
(6)
(5)
(1)
(4)
(2)
(8)
GND
1OUT
V
CC
1IN1
1IN2
TPS2815Y
(7)
(3)
2IN1
2OUT
2IN2
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Terminal Functions
TPS2811, TPS2812, TPS2813
TERMINAL NUMBERS
TERMINAL
NAME
TPS2811
Dual Inverting
Drivers
TPS2812
Dual Noninverting
Drivers
TPS2813
Complimentary
Drivers
DESCRIPTION
REG_IN 1 1 1 Regulator input
1IN 2 2 2 Input 1
GND 3 3 3 Ground
2IN 4 4 4 Input 2
2OUT 5 = 2IN 5 = 2IN 5 = 2IN Output 2
V
CC
6 6 6 Supply voltage
1OUT 7 = 1IN 7 = 1IN 7 = 1IN Output 1
REG_OUT 8 8 8 Regulator output
TPS2814, TPS2815
TERMINAL NUMBERS
TERMINAL
NAME
TPS2814
Dual AND Drivers with Single
Inverting Input
TPS2815
Dual NAND Drivers
DESCRIPTION
1IN1 1 1 Noninverting input 1 of driver 1
1IN2 2 - Inverting input 2 of driver 1
1IN2 - 2 Noninverting input 2 of driver 1
2IN1 3 3 Noninverting input 1 of driver 2
2IN2 4 - Inverting input 2 of driver 2
2IN2 - 4 Noninverting input 2 of driver 2
2OUT 5 = 2IN1 • 2IN2 5 = 2IN1 • 2IN2 Output 2
V
CC
6 6 Supply voltage
1OUT 7 = 1IN1 • 1IN2 7 = 1IN1 • 1IN2 Output 1
GND 8 8 Ground
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
P 1090 mW 8.74 mW/°C 697 mW 566 mW
D 730 mW 5.84 mW/°C 467 mW 380 mW
PW 520 mW 4.17 mW/°C 332 mW 270 mW
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Regulator input voltage range, REG_IN –0.3 V to 42 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Supply voltage, V
CC
–0.3 V to 15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, 1IN, 2IN, 1IN1, 1IN2, 1IN2
, 2IN1, 2IN2, 2IN2 –0.3 V to V
CC
. . . . . . . . . . . . . . . . . . . . . . .
Continuous regulator output current, REG_OUT 25 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous output current, 1OUT, 2OUT ±100 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating ambient temperature range, T
A
–40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to device GND pin.
recommended operating conditions
MIN MAX UNIT
Regulator input voltage range 8 40 V
Supply voltage, V
CC
4 14 V
Input voltage, 1IN1, 1IN2, 1IN2, 2IN1, 2IN2, 2IN2, 1IN, 2IN –0.3 V
CC
V
Continuous regulator output current, REG_OUT 0 20 mA
Ambient temperature operating range –40 125 °C
TPS28xx electrical characteristics over recommended operating ambient temperature range,
V
CC
= 10 V, REG_IN open for TPS2811/12/13, C
L
= 1 nF (unless otherwise noted)
inputs
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
VCC = 5 V 3.3 4 V
Positive-going input threshold voltage
VCC = 10 V 5.8 9 V
VCC = 14 V 8.3 13 V
VCC = 5 V 1 1.6 V
Negative-going input threshold voltage
VCC = 10 V 1 4.2 V
VCC = 14 V 1 6.2 V
Input hysteresis VCC = 5 V 1.6 V
Input current Inputs = 0 V or V
CC
–1 0.2 1 µA
Input capacitance 5 10 pF
†
Typicals are for TA = 25°C unless otherwise noted.
outputs
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
p
IO = –1 mA 9.75 9.9
High-level output voltage
IO = –100 mA 8 9.1
V
p
IO = 1 mA 0.18 0.25
Low-level output voltage
IO = 100 mA 1 2
V
Peak output current VCC = 10 V 2 A
†
Typicals are for TA = 25°C unless otherwise noted.
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
regulator (TPS2811/2812/2813 only)
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
Output voltage 14 ≤ REG_IN ≤ 40 V, 0 ≤ IO ≤ 20 mA 10 11.5 13 V
Output voltage in dropout IO = 10 mA, REG_IN = 10 V 9 9.6 V
†
Typicals are for TA = 25°C unless otherwise noted.
supply current
PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT
Supply current into V
CC
Inputs high or low 0.2 5 µA
Supply current into REG_IN REG_IN = 20 V, REG_OUT open 40 100 µA
†
Typicals are for TA = 25°C unless otherwise noted.
TPS28xxY electrical characteristics at TA = 25°C, V
CC
= 10 V, REG_IN open for TPS2811/12/13,
C
L
= 1 nF (unless otherwise noted)
inputs
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC = 5 V 3.3 V
Positive-going input threshold voltage
VCC = 10 V 5.8 V
VCC = 14 V 8.2 V
VCC = 5 V 1.6 V
Negative-going input threshold voltage
VCC = 10 V 3.3 V
VCC = 14 V 4.2 V
Input hysteresis VCC = 5 V 1.2 V
Input current Inputs = 0 V or V
CC
0.2 µA
Input capacitance 5 pF
outputs
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
p
IO = –1 mA 9.9
High-level output voltage
IO = –100 mA 9.1
V
p
IO = 1 mA 0.18
Low-level output voltage
IO = 100 mA 1
V
Peak output current VCC = 10.5 V 2 A
regulator (TPS2811, 2812, 2813)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output voltage 14 ≤ REG_IN ≤ 40 V, 0 ≤ IO ≤ 20 mA 11.5 V
Output voltage in dropout IO = 10 mA, REG_IN = 10 V 9.6 V
power supply current
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply current into V
CC
Inputs high or low 0.2 µA
Supply current into REG_IN REG_IN = 20 V, REG_OUT open 40 µA
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
switching characteristics for all devices over recommended operating ambient temperature range,
REG_IN open for TPS2811/12/13, C
L
= 1 nF (unless otherwise specified)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC = 14 V 14 25
t
r
Rise time
VCC = 10 V
15 30
ns
VCC = 5 V 20 35
VCC = 14 V 15 25
t
f
Fall time
VCC = 10 V
15 30
ns
VCC = 5 V 18 35
VCC = 14 V 25 40
t
PHL
Prop delay time high-to-low-level output
VCC = 10 V 25 45
ns
VCC = 5 V 34 50
VCC = 14 V 24 40
t
PLH
Prop delay time low-to-high-level output
VCC = 10 V
26 45
ns
VCC = 5 V 36 50
PARAMETER MEASUREMENT INFORMATION
Regulator
50 Ω
0.1 µF 4.7 µF
+
V
CC
1 nF
1
2
3
4
8
7
6
5
Input Output
TPS2811
NOTE A: Input rise and fall times should be ≤10 ns for accurate measurement of ac parameters.
Figure 1. Test Circuit For Measurement of Switching Characteristics
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
0–10 V dc
xOUT
0.1 µF 4.7 µF
10 V
Current
Loop
1
2
3
4
8
7
6
5
TPS2811
Regulator
+
V
CC
Figure 2. Shoot-through Current Test Setup
50%
90%
1IN
1OUT
50% 50%
90%
10%
50%
10%
t
PLH
t
r
t
f
t
PHL
0 V
0 V
Figure 3. Typical Timing Diagram (TPS2811)
TYPICAL CHARACTERISTICS
Tables of Characteristics Graphs and Application Information
typical characteristics
PARAMETER vs PARAMETER 2 FIGURE PAGE
Rise time Supply voltage 4 10
Fall time Supply voltage 5 10
Propagation delay time Supply voltage 6, 7 10
Supply voltage 8 11
Supply current Load capacitance 9 11
Ambient temperature 10 11
Input threshold voltage Supply voltage 11 11
Regulator output voltage Regulator input voltage 12, 13 12
Regulator quiescent current Regulator input voltage 14 12
Peak source current Supply voltage 15 12
Peak sink current Supply voltage 16 13
Input voltage, high-to-low 17 13
Shoot-through current
Input voltage, low-to-high 18 13
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Tables of Characteristics Graphs and Application Information (Continued)
general applications
PARAMETER vs PARAMETER 2 FIGURE PAGE
Switching test circuits and application information 19, 20 15
Low-to-high 21, 23, 25 16, 17
Voltage of 1OUT vs 2OUT
Time
High-to-low 22, 24, 26 16, 17
circuit for measuring paralleled switching characteristics
PARAMETER vs PARAMETER 2 FIGURE PAGE
Switching test circuits and application information 27 17
p
p
Low-to-high 28, 30 18
Input voltage vs output voltage
Time
High-to-low 29, 31 18
Hex-1 to Hex-4 application information
PARAMETER vs PARAMETER 2 FIGURE PAGE
Driving test circuit and application information 32 19
Hex-1 size 33 20
Hex-2 size 36 20
Drain-source voltage vs drain current Time
Hex-3 size 39 21
Hex-4 size 41 22
Hex-4 size parallel drive 45 23
Hex-1 size 34 20
Hex-2 size 37 21
Drain-source voltage vs gate-source voltage at turn-on Time
Hex-3 size 40 21
Hex-4 size 43 22
Hex-4 size parallel drive 46 23
Hex-1 size 35 20
Hex-2 size 38 21
Drain-source voltage vs gate-source voltage at turn-off Time
Hex-3 size 42 22
Hex-4 size 44 22
Hex-4 size parallel drive 47 23
synchronous buck regulator application
PARAMETER vs PARAMETER 2 FIGURE PAGE
3.3-V 3-A Synchronous-Rectified Buck Regulator Circuit 48 24
Q1 drain voltage vs gate voltage at turn-on 49 26
Q1 drain voltage vs gate voltage at turn-off 50 26
Q1 drain voltage vs Q2 gate-source voltage
Time
51, 52, 53 26, 27
p
pp
3 A 54 27
Output ripple voltage vs inductor current
5 A 55 27
TPS2811, TPS2812, TPS2813, TPS2814, TPS2815
DUAL HIGH-SPEED MOSFET DRIVERS
SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 4
16
14
12
10
5678910
– Rise Time – ns
18
20
RISE TIME
vs
SUPPLY VOLTAGE
22
11 12 13 14
CL = 1 nF
TA = 125°C
TA = 75°C
TA = 25°C
TA = –25°C
TA = –50°C
t
r
VCC – Supply Voltage – V
Figure 5
16
14
12
10
5678910
– Fall Time – ns
18
20
FALL TIME
vs
SUPPLY VOLTAGE
22
11 12 13 14
CL = 1 nF
TA = 125°C
TA = 75°C
TA = 25°C
TA = –25°C
TA = –50°C
t
f
VCC – Supply Voltage – V
Figure 6
30
25
20
15
56 78910
35
40
45
11 12 13 14
CL = 1 nF
TA = 125°C
TA = 75°C
TA = 25°C
TA = –25°C
TA = –50°C
Propagation Delay Time,
PROPAGATION DELAY TIME,
HIGH-TO-LOW-LEVEL OUTPUT
vs
SUPPLY VOLTAGE
VCC – Supply Voltage – V
t –
PHL
High-To-Low-Level Output – ns
Figure 7
30
25
20
15
5678 910
35
40
45
11 12 13 14
Propagation Delay Time,
PROPAGATION DELAY TIME,
LOW-TO-HIGH-LEVEL OUTPUT
vs
SUPPLY VOLTAGE
VCC – Supply Voltage – V
t –
PLH
Low-To-High-Level Output – ns
CL = 1 nF
TA = –50°C
TA = 75°C
TA = –25°C
TA=125°C
TA = 25°C
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