Texas Instruments TPS2068IDGNRQ1 Schematic [ru]

DGNPACKAGE

(TOP VIEW)

GND

1
2
3
4

8
7
6
5

IN

IN

EN

OUT
OUT
OUT

OC

TPS2068-Q1

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................................................................................................................................................................................................ SLVS999 –AUGUST 2009

CURRENT-LIMITED POWER-DISTRIBUTION SWITCH

Check for Samples: TPS2068-Q1

1

FEATURES

2

• Qualified for Automotive Applications

• 70-mΩ High-Side MOSFET

• 1.5-A Continuous Current

• Thermal and Short-Circuit Protection

• Accurate Current Limit (1.6 A Min, 2.6 A Max)

• Operating Range: 2.7 V to 5.5 V

• 0.6-ms Typical Rise Time

• Undervoltage Lockout

• Deglitched Fault Report (OC)

• No OC Glitch During Power Up

• 1-μA Maximum Standby Supply Current

• Reverse Current Blocking

• UL Listed – File No. E169910

• CB Certified

DESCRIPTION

The TPS2068 power-distribution switches are intended for applications where heavy capacitive loads and
short-circuits are likely to be encountered. This device incorporates 70-mΩ N-channel MOSFET power switches
for power-distribution systems that require single or dual power switches in a single package. Each switch is
controlled by a logic enable input. Gate drive is provided by an internal charge pump designed to control the
power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no
external components and allows operation from supplies as low as 2.7 V.

When the output load exceeds the current-limit threshold or a short is present, the device limits the output current
to a safe level by switching into a constant-current mode, pulling the overcurrent (OC) logic output low. When
continuous heavy overloads and short-circuits increase the power dissipation in the switch, causing the junction
temperature to rise, a thermal protection circuit shuts off the switch to prevent damage. Recovery from a thermal
shutdown is automatic once the device has cooled sufficiently. Internal circuitry ensures that the switch remains
off until valid input voltage is present. Current limit is typically 2.1 A.

APPLICATIONS

• Heavy Capacitive Loads

• Short-Circuit Protections

1

2PowerPad is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright © 2009, Texas Instruments Incorporated

TPS2068-Q1

SLVS999 –AUGUST 2009 ................................................................................................................................................................................................

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

T

A

PACKAGE

(2)

ORDERABLE PART NUMBER TOP-SIDE MARKING

(1)

–40°C to 85°C MSOP – DGN Reel of 2500 TPS2068IDGNRQ1 PSQQ

(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted

Input voltage range, V

V

Input voltage range, V

I

Voltage range, V

V

Output voltage range, V

O

I

Continuous output current , I

O

Continuous total power dissipation See Dissipation Rating Table

T

Operating virtual-junction temperature range –40°C to 105°C

J

T

Storage temperature range –65°C to150°C

stg

ESD Electrostatic discharge protection Machine model (MM) 50 V

(1) Stresses beyond those listed under absolute maximum ratingsmay cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

I(IN)
I(EN)

I(OC)

O(OUT)

O(OUT)

Human-body model (HBM) 1500 V

Charged-device model (CDM) 1000 V

(1)

–0.3 V to 6 V
–0.3 V to 6 V
–0.3 V to 6 V
–0.3 V to 6 V

Internally limited

DISSIPATING RATING TABLE

PACKAGE

(2)

DGN-8

TA< 25°C DERATING FACTOR TA= 70°C TA= 85°C

POWER RATING ABOVE TA= 25°C POWER RATING POWER RATING

1370 mW 17 mW/°C 600 mW 342 mW

(1)

(1) Heatsink the PowerPad™per the recommendations of SLMA002. PCB used for recommendations per appendix A4.
(2) See Recommended Operating Conditions Table for PowerPad connection guidelines to meet qualifying conditions for CB Certificate.

RECOMMENDED OPERATING CONDITIONS

(1)

MIN MAX UNIT

V

I
T

Input voltage, V

I

Input voltage, V
Continuous output current, I

O

Operating virtual-junction temperature –40 105 °C

J

I(IN)
I(EN)

O(OUT)

2.7 5.5 V
0 5.5 V
0 1.5 A

(1) The thermal pad must be connected externally to GND pin to meet qualifying conditions for CB Certificate (DGN package only).

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TPS2068-Q1

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................................................................................................................................................................................................ SLVS999 –AUGUST 2009

ELECTRICAL CHARACTERISTICS

–40°C ≤ TJ≤ 105° V

PARAMETER TEST CONDITIONS

POWER SWITCH

Static drain-source on-state resistance,

r

DS(on)

t

r

t

f

ENABLE INPUT EN

V

IH

V

IL

I

I

t

on

t

off

CURRENT LIMIT

I

OS

I

OC_TRIP

I

OS

I

OL

I

OH

I

lkg

UNDERVOLTAGE LOCKOUT

OVERCURRENT OC

V

OL(OC)

THERMAL SHUTDOWN

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
(2) Specified by design

(3) This configuration has not been tested for UL certification.
(4) The thermal shutdown only reacts under overcurrent conditions.

5-V operation and 3.3-V operation
Static drain-source on-state resistance,

2.7-V operation

Rise time, output

Fall time, output

High-level input voltage 2.7 V < V
Low-level input voltage 2.7 V < V
Input current V
Turn-on time
Turn-off time

Short-circuit output current 1.6 2.1 2.6 A
Overcurrent trip threshold

(3)

Short-circuit output current

Supply current, low-level output No load on OUT, V

Supply current, high-level output No load on OUT, V

Leakage current OUT connected to ground, V
Reverse leakage current V

Low-level input voltage, IN 2 2.5 V
Hysteresis, IN TJ= 25°C 75 mV

Output low voltage I
Off-state current V
OC deglitch

Thermal shutdown threshold
Recovery from thermal shutdown
Hysteresis 10 °C

separately.

= 5.5 V, IO= 1 A, V

I(IN)

(2)

(2)

(2)
(2)

(2)

(2)

(2)

(4)

(2)

= 0 V (unless otherwise noted)

I(EN)

(1)

V

= 5 V or 3.3 V, IO= 1.5 A 70 150 mΩ

I(IN)

V

= 2.7 V, IO= 1.5 A 75 150 mΩ

I(IN)

V

= 5.5 V 0.6 1.5

I(IN)

V

= 2.7 V 0.4 1

I(IN)

V

= 5.5 V 0.05 0.5

I(IN)

V

= 2.7 V 0.05 0.5

I(IN)

< 5.5 V 2

I(IN)

< 5.5 V 0.8

I(IN)

= 0 V or 5.5 V -0.5 0.5 μA

I(EN)

CL= 1 μF,
RL= 5 Ω

TJ=25°C ms

MIN TYP MAX UNIT

CL= 100 μF, RL= 5 Ω 3
CL= 100 μF, RL= 5 Ω 10

V

= 5 V, OUT connected to GND,

I(IN)

Device enabled into short-circuit
V

= 5 V, Current ramp (≤ 100 A/s) on OUT 2.3 2.85 3.4 A

I(IN)

V

= 5 V, OUT connected to GND, Device enabled into

I(IN)

short-circuit, current measured at V

= 5.5 V μA

I(EN)

= 0 V μA

I(EN)

= 5.5 V, IN = ground TJ= 25°C 0.2 μA

I(OUT)

= 5 mA 0.4 V

O(OC)

= 5 V or 3.3 V 1 μA

O(OC)

I(IN)

TJ= 25°C 0.5 1
Over TJrange 0.5 5
TJ= 25°C 43 60
Over TJrange 43 70

= 5.5 V 1 μA

I(EN)

3.2 4.2 5.2 A

OC assertion or deassertion 4 8 15 ms

135 °C

(2)

125 °C

V

ms

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OUT

OC

IN

EN

GND

Current

Limit

Driver

UVLO

Charge

Pump

CS

Thermal

Sense

Deglitch

(SeeNote A)

TPS2068-Q1

SLVS999 –AUGUST 2009 ................................................................................................................................................................................................

www.ti.com

DEVICE INFORMATION

Terminal Functions

NAME NO. I/O DESCRIPTION

EN 4 I Enable input, logic low turns on power switch
GND 1 Ground
IN 2,3 I Input voltage
OC 5 O Overcurrent, open-drain output, active-low
OUT 6, 7,8 O Power-switch output
Thermal pad Connect to GND

(1) See the Recommended Operating Conditions Table for PowerPad connection guidelines to meet qualifying conditions for CB Certificate

(DGN package only).

(1)

Functional Block Diagram

A. Current sense.

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R

L

C

L

OUT

t

r

t

f

90%

90%

10%

10%

50%

50%

90%

10%

V

O(OUT)

V

I(EN)

V

O(OUT)

VOLTAGE WAVEFORMS

TEST CIRCUIT

t

on

t

off

50%

50%

90%

10%

V

I(EN)

V

O(OUT)

t

on

t

off

V

I(EN)

5V/div

V

O(OUT)

2V/div

t-Time-400 sm

R =5

C =1 F,

L

L

W

m

,

=25 CT

A

°

V

I(EN)

5V/div

V

O(OUT)

2V/div

t-Time-400 sm

R =5

C =1 F,

L

L

W

m

,

=25 CT

A

°

TPS2068-Q1

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................................................................................................................................................................................................ SLVS999 –AUGUST 2009

PARAMETER MEASUREMENT INFORMATION

Figure 1. Test Circuit and Voltage Waveforms

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V

I(EN)

5V/div

V

O(OUT)

2V/div

t-Time-400 sm

R =5

C =100 F,

L

L

W

m

,

=25 CT

A

°

V

I(EN)

5V/div

V

O(OUT)

2V/div

t-Time-400 sm

R =5

C =100 F,

L

L

W

m

,

=25 CT

A

°

V

I(EN)

5 V/div

I

O(OUT)

500 mA/div

t − Time − 500 ms/div

220 mF

470 mF

100 mF

V

I(EN)

5 V/div

I

O(OUT)

500 mA/div

t − Time − 500 ms/div

VIN = 5 V ,
RL = 3 W,
TA = 255C

TPS2068-Q1

SLVS999 –AUGUST 2009 ................................................................................................................................................................................................

PARAMETER MEASUREMENT INFORMATION (continued)

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V

O( )OCx

2V/div

I

O(OUT)

1 A/div

t-Time-2ms/div

TPS2068-Q1

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................................................................................................................................................................................................ SLVS999 –AUGUST 2009

PARAMETER MEASUREMENT INFORMATION (continued)

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0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

2 3 4 5 6

Turnon Time − ms

VI − Input Voltage − V

CL = 100 mF,
RL = 5 W,
TA = 255C

1.5

1.6

1.7

1.8

1.9

2

2 3 4 5 6

CL = 100 mF,
RL = 5 W,
TA = 255C

Turnoff Time − mS

VI − Input Voltage − V

0

0.1

0.2

0.3

0.4

0.5

0.6

2 3 4 5 6

Rise Time − ms

VI − Input Voltage − V

CL = 1 mF,
RL = 5 W,
TA = 255C

0

0.05

0.1

0.15

0.2

0.25

2 3 4 5 6

CL = 1 mF,
RL = 5 W,
TA = 255C

Fall Time − ms

VI − Input Voltage − V

TPS2068-Q1

SLVS999 –AUGUST 2009 ................................................................................................................................................................................................

TYPICAL CHARACTERISTICS

TURNON TIME TURNOFF TIME

vs vs

INPUT VOLTAGE INPUT VOLTAGE

Figure 9. Figure 10.

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RISE TIME FALL TIME

vs vs

INPUT VOLTAGE INPUT VOLTAGE

Figure 11. Figure 12.

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