The TPS2045 and TPS2055 power-distribution switches are intended for applications where heavy capacitive
loads and short circuits are likely. Each of these 135-mΩ N-channel MOSFET high-side power switches is
controlled by a logic enable compatible with 5-V and 3-V logic. Gate drive is provided by an internal charge pump
that controls the power-switch rise times and fall times to minimize current surges during switching. The charge
pump requires no external components and allows operation from supplies as low as 2.7 V.
OUT
8
OUT
7
OUT
6
5
OC
When the output load exceeds the current-limit threshold or a short is present, the TPS2045 and TPS2055 limit
the output current to a safe level by switching into a constant-current mode, pulling the overcurrent (OC
) logic
output low. When continuous heavy overloads and short circuits increase the power dissipation in the switch,
causing the junction temperature to rise, a thermal protection circuit shuts off the switch in overcurrent to prevent
damage. Recovery from a thermal shutdown is automatic once the device has cooled sufficiently. Internal
circuitry ensures the switch remains off until valid input voltage is present.
The TPS2045 and TPS2055 are designed to limit at0.44-A load. These power-distribution switches, available
in 8-pin small-outline integrated circuit (SOIC) and 8-pin plastic dual-in-line packages (PDIP), operate over an
ambient temperature range of –40°C to 85°C.
AVAILABLE OPTIONS
RECOMMENDED
T
A
–40°C to 85°CActive low0.250.44TPS2045DTPS2045P
–40°C to 85°CActive high0.250.44TPS2055DTPS2055P
†
The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS2045DR)
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
ENABLE
LOAD CURRENT
(A)
TYPICAL SHORT-CIRCUIT
CURRENT LIMIT AT 25°C
(A)
PACKAGED DEVICES
SOIC
(D)
†
PDIP
(P)
This document contains information on products in more than one phase
of development. The status of each device is indicated on the page(s)
specifying its electrical characteristics.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Copyright 1999, Texas Instruments Incorporated
1
TPS2045, TPS2055
I/O
DESCRIPTION
CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES
SLVS182 – APRIL 1999
TPS2045 functional block diagram
Power Switch
IN
Charge
Pump
CS
†
OUT
EN
GND
†
Current Sense
Driver
UVLO
Thermal
Sense
Current
Limit
Terminal Functions
TERMINAL
NO.
NAME
EN4–IEnable input. Logic low turns on power switch.
EN–4IEnable input. Logic high turns on power switch.
GND11IGround
IN2, 32, 3IInput voltage
OC55OOver current. Logic output active low
OUT6, 7, 86, 7, 8OPower-switch output
D OR P
TPS2045TPS2055
OC
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
detailed description
power switch
TPS2045, TPS2055
CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES
SLVS182 – APRIL 1999
The power switch is an N-channel MOSFET with a maximum on-state resistance of 135 mΩ (V
Configured as a high-side switch, the power switch prevents current flow from OUT to IN and IN to OUT when
disabled. The power switch can supply a minimum of 250 mA per switch.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
driver
The driver controls the gate voltage of the power switch. T o limit large current surges and reduce the associated
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and
fall times of the output voltage. The rise and fall times are typically in the 2-ms to 4-ms range.
enable (EN or EN)
The logic enable disables the power switch and the bias for the charge pump, driver, and other circuitry to reduce
the supply current to less than 10 µA when a logic high is present on EN (TPS2045) or a logic low is present
on EN (TPS2055). A logic zero input on EN or a logic high on EN restores bias to the drive and control circuits
and turns the power on. The enable input is compatible with both TTL and CMOS logic levels.
overcurrent (OC)
The OC
encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
current sense
open-drain output is asserted (active low) when an overcurrent or overtemperature condition is
I(IN)
= 5 V).
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry
sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power FET into
its saturation region, which switches the output into a constant current mode and holds the current constant
while varying the voltage on the load.
thermal sense
An internal thermal-sense circuit shuts off the power switch when the junction temperature rises to
approximately 140°C. Hysteresis is built into the thermal sense circuit. After the device has cooled
approximately 20°C, the switch turns back on. The switch continues to cycle off and on until the fault is removed.
undervoltage lockout
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V , a control
signal turns off the power switch.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
TPS2045, TPS2055
UNIT
CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES
SLVS182 – APRIL 1999
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Input voltage range, V
Output voltage range, V
Input voltage range, V
Continuous output current, I
Operating virtual junction temperature range, T
Storage temperature range, T
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds260°C. . . . . . . . . . . . . . . . . . . . . . .
Electrostatic discharge (ESD) protection: Human body model MIL-STD-883C 2 kV. . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.