Texas Instruments TLV2332IDR, TLV2332ID, TLV2334IPWLE, TLV2334IPW, TLV2334IN Datasheet
...
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages Over
Specified Temperature Range:
T
A
= –40°C to 85°C...2 V to 8 V
D
Fully Characterized at 3 V and 5 V
D
Single-Supply Operation
D
Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
V
DD
–1 V at TA = 25°C
D
Output Voltage Range Includes Negative
Rail
D
High Input Impedance...10
12
Ω Typ
D
ESD-Protection Circuitry
D
Designed-In Latch-Up Immunity
description
The TL V233x operational amplifiers are in a family
of devices that has been specifically designed for
use in low-voltage single-supply applications.
Unlike the TLV2322 which is optimized for
ultra-low power, the TLV233x is designed to
provide a combination of low power and good ac
performance. Each amplifier is fully functional
down to a minimum supply voltage of 2 V, is fully
characterized, tested, and specified at both 3-V
and 5-V power supplies. The common-mode
input-voltage range includes the negative rail and
extends to within 1 V of the positive rail.
Having a maximum supply current of only 310 µA
per amplifier over full temperature range, the
TLV233x devices offer a combination of good ac
performance and microampere supply currents.
From a 3-V power supply, the amplifier’s typical
slew rate is 0.38 V/µs and its bandwidth is
300 kHz.
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
VIOmax
AT 25°C
SMALL OUTLINE
†
(D)
PLASTIC DIP
(N)
PLASTIC DIP
(P)
TSSOP
‡
(PW)
CHIP FORM
§
(Y)
°
°
9 mV TLV2332ID — TLV2332IP TLV2332IPWLE TLV2332Y
–
40°C to 85°C
10 mV TLV2334ID TLV2334IN — TLV2334IPWLE TLV2334Y
†
The D package is available taped and reeled. Add R suffix to the device type (e.g., TL V2332IDR).
‡
The PW package is only available left-end taped and reeled (e.g., TLV2332IPWLE).
§
Chip forms are tested at 25°C only.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments Incorporated.
1
2
3
4
8
7
6
5
1OUT
1IN–
1IN+
V
DD–
/GND
V
DD
2OUT
2IN–
2IN+
1
2
3
4
8
7
6
5
1OUT
1IN–
1IN+
V
DD –
/GND
V
DD+
2OUT
2IN–
2IN+
TLV2332
D OR P PACKAGE
(TOP VIEW)
TLV2332
PW PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN–
1IN+
V
DD+
2IN+
2N–
2OUT
4OUT
4IN–
4IN+
V
DD–/GND
3IN+
3IN–
3OUT
4OUT
4IN–
4IN+
V
DD–/GND
3IN+
3IN–
3OUT
1OUT
1IN–
1IN+
V
DD+
2IN+
2IN–
2OUT
1
78
14
TLV2334
D OR N PACKAGE
(TOP VIEW)
TLV2334
PW PACKAGE
(TOP VIEW)
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
description (continued)
These amplifiers offer a level of ac performance greater than that of many other devices operating at
comparable power levels. The TL V233x operational amplifiers are especially well suited for use in low-current
or battery-powered applications.
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS technology . The LinCMOS process also features extremely high input impedance and ultra-low bias
currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter
applications.
T o facilitate the design of small portable equipment, the TL V233x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only
1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.
TLV2332Y chip information
This chip, when properly assembled, display characteristics similar to the TLV2332. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–
1OUT
1IN+
1IN–
V
DD
V
DD–
/GND
(8)
(6)
(3)
(2)
(5)
(1)
–
+
(7)
2IN+
2IN–
2OUT
(4)
59
72
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2334Y chip information
This chip, when properly assembled, displays characteristics similar to the TL V2334. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
+
–
1OUT
1IN+
1IN–
V
DD
(4)
(6)
(3)
(2)
(5)
(1)
2IN+
2IN–
2OUT
(11)
V
DD–
/GND
+
–
3OUT
3IN+
3IN–
(13)
(10)
(9)
(12)
(8)
–
+
(14)
4OUT
4IN+
4IN–
+
–
(7)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
68
108
(1) (2) (3) (4) (5) (6) (7)
(8)(9)(10)(11)(12)(13)(14)
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
equivalent schematic (each amplifier)
P1
P4
P5
P6
N3
N5
OUT
R6
V
DD
P3
P2
IN–
IN+
R1
R2
R5
C1
R3
D1
R4
N1
N2
D2
GND
N4
N6
R7
N7
ACTUAL DEVICE COMPONENT COUNT
†
COMPONENT TLV2332 TLV2334
Transistors 54 108
Resistors 14 28
Diodes 4 8
Capacitors 2 4
†
Includes both amplifiers and all ESD, bias, and trim
circuitry.
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
†
Supply voltage, V
DD
(see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, V
ID
(see Note 2) V
DD±
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, V
I
(any input) –0.3 V to V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, I
I
±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, I
O
±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) T
A
= 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
–40°C to 85° C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at the noninverting input with respect to the inverting input.
3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
T
≤ 25°C DERATING FACTOR T
= 85°C
PACKAGE
A
POWER RATING ABOVE TA = 25°C
A
POWER RATING
D–8 725 mW 5.8 mW/°C 377 mW
D–14 950 mW 7.6 mW/°C 494 mW
N 1575 mW 12.6 mW/°C 819 mW
P 1000 mW 8.0 mW/°C 520 mW
PW–8 525 mW 4.2 mW/°C 273 mW
PW–14 700 mW 5.6 mW/°C 364 mW
recommended operating conditions
MIN MAX UNIT
Supply voltage, V
DD
2 8 V
p
VDD = 3 V –0.2 1.8
Common-mode input voltage, V
IC
VDD = 5 V –0.2 3.8
V
Operating free-air temperature, T
A
–40 85 °C
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2332I electrical characteristics at specified free-air temperature
TLV2332I
PARAMETER
TEST
T
A
†
VDD = 3 V VDD = 5 V
UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
p
VO = 1 V,
V
= 1 V,
25°C 0.6 9 1.1 9
VIOInput offset voltage
IC
,
RS = 50 Ω,
RL = 100 kΩ
Full range 11 11
mV
α
VIO
Average temperature coefficient of
input offset voltage
25°C to
85°C
1 1.7 µV/°C
p
V
= 1 V,
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
O
,
VIC = 1 V
85°C 22 1000 24 1000
pA
p
V
= 1 V,
25°C 0.6 0.6
p
IIBInput bias current (see Note 4)
O
,
VIC = 1 V
85°C 175 2000 200 2000
pA
°
–0.2
–0.3
–0.2
–0.3
Common-mode input
25°C
t
o
2
t
o
2.3
t
o
4
t
o
4.2
V
ICR
voltage range (see Note 5)
Full range
–0.2
to
1.8
–0.2
to
3.8
V
p
VIC = 1 V,
25°C 1.75 1.9 3.2 3.9
VOHHigh-level output voltage
V
ID
=
100 mV
,
IOH = –1 mA
Full range 1.7 3
V
p
VIC = 1 V,
25°C 115 150 95 150
VOLLow-level output voltage
V
ID
= –
100 mV
,
IOL = 1 mA
Full range 190 190
mV
Large-signal differential
VIC = 1 V,
25°C 25 83 25 170
A
VD
gg
voltage amplification
R
L
=
100 kΩ
,
See Note 6
Full range 15 15
V/mV
VO = 1 V,
25°C 65 92 65 91
CMRR
Common-mode rejection ratio
V
IC
=
V
ICR
min,
RS = 50 Ω
Full range 60 60
dB
Supply-voltage rejection ratio
VIC = 1 V,
25°C 70 94 70 94
k
SVR
ygj
(∆VDD/∆VIO)
V
O
=
1 V
,
RS = 50 Ω
Full range 65 65
dB
pp
VO = 1 V,
25°C 160 500 210 560
IDDSupply current
V
IC
= 1 V,
No load
Full range 620 800
µ
A
†
Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically .
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2332I operating characteristics at specified free-air temperature, VDD = 3 V
TLV2332I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
VIC = 1 V,
V
I(PP)
= 1 V,
p
25°C 0.38
SR
Slew rate at unity gain
R
L
=
100 kΩ
,
See Figure 34
C
L
= 20 F,
85°C
0.29
V/µs
V
n
Equivalent input noise voltage
f =1 kHz,
See Figure 35
RS = 20 Ω,
25°C 32
nV/√Hz
p
V
= V
, C
= 20 pF,
25°C 34
BOMMaximum output-swing bandwidth
OOH
,
RL = 100 kΩ,
L
,
See Figure 34
85°C
32
kH
z
V
= 10 mV, C
= 20 pF,
25°C 300
B1Unity-gain bandwidth
I
,
RL = 100 kΩ,
L
,
See Figure 36
85°C 235
kH
z
V
= 10 mV
,
f = B
,
–40°C 42°
φ
m
Phase margin
V
I
10
mV,
CL = 20 pF,
f B1,
RL = 100 kΩ,
25°C
39°
See Figure 36
85°C 36°
TLV2332I operating characteristics at specified free-air temperature, VDD = 5 V
TLV2332I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
25°C 0.43
V
IC
= 1 V,
RL = 100 kΩ,
V
I(PP)
= 1
V
85°C 0.35
SR
Slew rate at unity gain
L
,
CL = 20 pF,
25°C 0.40
V/µs
See Figure 34
V
I(PP)
= 2.5
V
85°C 0.32
V
n
Equivalent input noise voltage
f =1 kHz,
See Figure 35
RS = 20 Ω,
25°C 32
nV/√Hz
p
V
= V
, C
= 20 pF,
25°C 55
BOMMaximum output-swing bandwidth
OOH
,
RL = 100 kΩ,
L
,
See Figure 34
85°C
45
kH
z
V
= 10 mV, C
= 20 pF,
25°C 525
B1Unity-gain bandwidth
I
,
RL = 100 kΩ,
L
,
See Figure 36
85°C
370
kH
z
V
= 10 mV
,
f = B
,
–40°C 43°
φ
m
Phase margin
V
I
10
mV,
CL = 20 pF,
f B1,
RL = 100 kΩ,
25°C
40°
See Figure 36
85°C 38°
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
8
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2334I electrical characteristics at specified free-air temperature
TLV2334I
PARAMETER TEST CONDITIONS
T
A
†
VDD = 3 V VDD = 5 V
UNIT
A
MIN TYP MAX MIN TYP MAX
p
VO = 1 V, VIC = 1 V,
25°C 0.6 10 1.1 10
VIOInput offset voltage
R
S
=
50 Ω
,
RL = 100 kΩ
Full range 12 12
mV
α
VIO
Average temperature coefficient
of input offset voltage
25°C to
85°C
1 1.7 µV/°C
p
25°C 0.1 0.1
p
IIOInput offset current (see Note 4)
V
O
= 1 V,
V
IC
= 1
V
85°C 22 1000 24 1000
pA
p
25°C 0.6 0.6
p
IIBInput bias current (see Note 4)
V
O
=
1 V
,
V
IC
=
1 V
85°C 175 2000 200 2000
pA
°
–0.2
–0.3
–0.2
–0.3
Common-mode input voltage
25°C
t
o
2
t
o
2.3
t
o
4
t
o
4.2
V
V
ICR
g
range (see Note 5)
Full range
–0.2
to
1.8
–0.2
to
3.8
V
p
VIC = 1 V,
25°C 1.75 1.9 3.2 3.9
VOHHigh-level output voltage
V
ID
=
100 mV
,
IOH = –1 mA
Full range 1.7 3
V
p
VIC = 1 V,
25°C 115 150 95 150
VOLLow-level output voltage
V
ID
= –
100 mV
,
IOL = 1 mA
Full range 190 190
mV
Large-signal differential
VIC = 1 V,
25°C 25 83 25 170
A
VD
gg
voltage amplification
R
L
=
100 kΩ
,
See Note 6
Full range 15 15
V/mV
VO = 1 V,
25°C 65 92 65 91
CMRR
Common-mode rejection ratio
V
IC
=
V
ICR
min,
RS = 50 Ω
Full range 60 60
dB
Supply-voltage rejection ratio
VDD = 3 V to 5 V,
25°C 70 94 70 94
k
SVR
ygj
(∆VDD/∆VIO)
V
IC
=
1 V
,
V
O
=
1 V
,
RS = 50 Ω
Full range 65 65
dB
pp
VO = 1 V, VIC = 1 V,
25°C 320 1000 420 1120
IDDSupply current
OIC
No load
Full range 1200 1600
µ
A
†
Full range is –40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2334I operating characteristics at specified free-air temperature, VDD = 3 V
TLV2334I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
VIC = 1 V,
V
I(PP)
= 1 V,
p
25°C 0.38
SR
Slew rate at unity gain
R
L
=
100 kΩ
,
See Figure 34
C
L
= 20 F,
85°C
0.29
V/µs
V
n
Equivalent input noise voltage
f = 1 kHz,
See Figure 35
RS = 20 Ω,
25°C 32
nV/√Hz
p
V
= V
, C
= 20 pF,
25°C 34
BOMMaximum output-swing bandwidth
OOH
,
RL = 100 kΩ,
L
,
See Figure 34
85°C
32
kH
z
V
= 10 mV, C
= 20 pF,
25°C 300
B1Unity-gain bandwidth
I
,
RL = 100 kΩ,
L
,
See Figure 36
85°C
235
kH
z
V
= 10 mV
,
–40°C 42°
φ
m
Phase margin
V
I
10
mV,
CL = 20 pF,
f
=
B
1
,
=
25°C 39°
See Figure 36
R
L
=
100 kΩ
,
85°C 36°
TLV2334I operating characteristics at specified free-air temperature, VDD = 5 V
TLV2334I
PARAMETER
TEST CONDITIONS
T
A
MIN TYP MAX
UNIT
25°C 0.43
V
IC
= 1 V,
RL = 100 kΩ,
V
I(PP)
= 1
V
85°C 0.35
SR
Slew rate at unity gain
L
,
CL = 20 pF,
25°C 0.40
V/µs
See Figure 34
V
I(PP)
= 2.5
V
85°C 0.32
V
n
Equivalent input noise voltage
f = 1 kHz,
See Figure 35
RS = 20 Ω,
25°C 32
nV/√Hz
p
V
= V
, C
= 20 pF,
25°C 55
BOMMaximum output-swing bandwidth
OOH
,
RL = 100 kΩ,
L
,
See Figure 34
85°C
45
kH
z
V
= 10 mV, C
= 20 pF,
25°C 525
B1Unity-gain bandwidth
I
,
RL = 100 kΩ,
L
,
See Figure 36
85°C
370
kH
z
V
= 10 mV
,
f = B
,
–40°C 43°
φ
m
Phase margin
V
I
10
mV,
CL = 20 pF,
f B1,
RL = 100 kΩ,
25°C 40°
See Figure 36
85°C 38°
TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS
SLOS189 – FEBRUARY 1997
10
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLV2332Y electrical characteristics, T
A
= 25°C
TLV2332Y
PARAMETER TEST CONDITIONS
VDD = 3 V VDD = 5 V
UNIT
MIN TYP MAX MIN TYP MAX
V
IO
Input offset voltage
VO = 1 V,
RS = 50 Ω,
VIC = 1 V,
RL = 100 kΩ
0.6 1.1 mV
I
IO
Input offset current (see Note 4) VO = 1 V, VIC = 1 V 0.1 0.1 pA
I
IB
Input bias current (see Note 4) VO = 1 V, VIC = 1 V 0.6 0.6 pA
V
ICR
Common-mode input voltage
range (see Note 5)
–0.3
to
2.3
–0.3
to
4.2
V
V
OH
High-level output voltage
VIC = 1 V,
IOH = –1 mA
VID = 100 mV ,
1.9 3.9 V
V
OL
Low-level output voltage
VIC = 1 V,
IOL = 1 mA
VID = 100 mV ,
115 95 mV
A
VD
Large-signal differential voltage
amplification
VIC = 1 V,
See Note 6
RL = 100 kΩ,
83 170 V/mV
CMRR Common-mode rejection ratio
VO = 1 V,
RS = 50 Ω
VIC = V
ICR
min,
92 91 dB
k
SVR
Supply-voltage rejection ratio
(∆VDD/∆VID)
VO = 1 V,
RS = 50 Ω
VIC = 1 V,
94 94 dB
I
DD
Supply current
VO = 1 V,
No load
VIC = 1 V,
160 210 µA
NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically .
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.
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