TEXAS INSTRUMENTS TLV2332, TLV2332Y, TLV2334, TLV2334Y Technical data

VIOmax

CHIP FORM

§

40°C to 85°C

查询TLV2332供应商

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

D

Wide Range of Supply Voltages Over
Specified Temperature Range:

T

= –40°C to 85°C...2 V to 8 V

A

D

Fully Characterized at 3 V and 5 V

D

Single-Supply Operation

D

Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
V

–1 V at TA = 25°C

DD

D

Output Voltage Range Includes Negative
Rail

12

D

High Input Impedance...10

D

ESD-Protection Circuitry

D

Designed-In Latch-Up Immunity

Ω Typ

description

The TL V233x operational amplifiers are in a family
of devices that has been specifically designed for
use in low-voltage single-supply applications.
Unlike the TLV2322 which is optimized for
ultra-low power, the TLV233x is designed to
provide a combination of low power and good ac
performance. Each amplifier is fully functional
down to a minimum supply voltage of 2 V, is fully
characterized, tested, and specified at both 3-V
and 5-V power supplies. The common-mode
input-voltage range includes the negative rail and
extends to within 1 V of the positive rail.

Having a maximum supply current of only 310 µA
per amplifier over full temperature range, the
TLV233x devices offer a combination of good ac
performance and microampere supply currents.
From a 3-V power supply, the amplifier’s typical
slew rate is 0.38 V/µs and its bandwidth is
300 kHz.

V

DD –

V

DD–

1OUT

/GND

1OUT

/GND

1IN–

1IN+

1OUT

1IN–
1IN+

V

DD+

2IN+
2IN–

2OUT

TLV2332

D OR P PACKAGE

(TOP VIEW)

1

1IN–
1IN+

1OUT

1IN–
1IN+

V

2IN+

2OUT

2
3
4

TLV2332

PW PACKAGE

(TOP VIEW)

1
2
3
4

TLV2334

D OR N PACKAGE

(TOP VIEW)

1
2
3
4

DD+

5

2N–

6
7

TLV2334

PW PACKAGE

(TOP VIEW)

1

78

8
7
6
5

8
7
6
5

14
13
12
11
10

9
8

14

V

DD

2OUT
2IN–
2IN+

V

DD+

2OUT
2IN–
2IN+

4OUT
4IN–
4IN+
V

DD–/GND

3IN+
3IN–
3OUT

4OUT
4IN–
4IN+
V

DD–/GND

3IN+
3IN–
3OUT

T

A

°

–

†

The D package is available taped and reeled. Add R suffix to the device type (e.g., TL V2332IDR).

‡

The PW package is only available left-end taped and reeled (e.g., TLV2332IPWLE).

§

Chip forms are tested at 25°C only.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

AT 25°C

9 mV TLV2332ID — TLV2332IP TLV2332IPWLE TLV2332Y

°

10 mV TLV2334ID TLV2334IN — TLV2334IPWLE TLV2334Y

SMALL OUTLINE

AVAILABLE OPTIONS

PACKAGED DEVICES

†

PLASTIC DIP

(D)

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

(N)

PLASTIC DIP

(P)

‡

TSSOP

(PW)

Copyright  1997, Texas Instruments Incorporated

(Y)

1

TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

description (continued)

These amplifiers offer a level of ac performance greater than that of many other devices operating at
comparable power levels. The TL V233x operational amplifiers are especially well suited for use in low-current
or battery-powered applications.

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate
LinCMOS technology . The LinCMOS process also features extremely high input impedance and ultra-low bias
currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter
applications.

T o facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package
options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has
significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only

1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The

TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.

TLV2332Y chip information

This chip, when properly assembled, display characteristics similar to the TLV2332. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

59

(7)

(5)

(6)

(4)

(8)

72

(3)

(2)

(1)

V

DD

(3)

1IN+

(2)

1IN–

2OUT

CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED

TO BACKSIDE OF CHIP.

(7)

(8)

+

–

V

DD–

(4)

+
–

/GND

(1)

(5)

(6)

1OUT

2IN+

2IN–

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2332, TLV2332Y, TLV2334, TLV2334Y

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

TLV2334Y chip information

This chip, when properly assembled, displays characteristics similar to the TL V2334. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.

68

BONDING PAD ASSIGNMENTS

(8)(9)(10)(11)(12)(13)(14)

(1) (2) (3) (4) (5) (6) (7)

108

V

DD

V

+

–

+

–

+

–

+

–

DD–

(4)

(11)

/GND

(1)

(7)

(8)

(14)

1OUT

2OUT

3OUT

4OUT

(3)

1IN+

(2)

1IN–

(5)

2IN+

(6)

2IN–

(10)

3IN+

(9)

3IN–

(12)

4IN+

(13)

4IN–

CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

3

TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

equivalent schematic (each amplifier)

V

DD

IN–

IN+

R1

P1

R3

D1

N1

P3

N2

R4

P2

R2

D2

P4

R5

GND

N3

C1

N4

N5

R6

R7

N6

P5

P6

OUT

N7

ACTUAL DEVICE COMPONENT COUNT

COMPONENT TLV2332 TLV2334

Transistors 54 108
Resistors 14 28
Diodes 4 8
Capacitors 2 4

†

Includes both amplifiers and all ESD, bias, and trim
circuitry.

†

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2332, TLV2332Y, TLV2334, TLV2334Y

PACKAGE

A

A

Common-mode input voltage, V

V

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

absolute maximum ratings over operating free-air temperature (unless otherwise noted)

Supply voltage, V
Differential input voltage, V
Input voltage range, V
Input current, I
Output current, I
Duration of short-circuit current at (or below) T

(see Note 1) 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DD

±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I

±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

O

(see Note 2) V

ID

(any input) –0.3 V to V

I

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . .

A

†

Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating free-air temperature range, T

–40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

A

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.

2. Differential voltages are at the noninverting input with respect to the inverting input.

3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).

DISSIPATION RATING T ABLE

T

≤ 25°C DERATING FACTOR T

POWER RATING ABOVE TA = 25°C

D–8 725 mW 5.8 mW/°C 377 mW

D–14 950 mW 7.6 mW/°C 494 mW

N 1575 mW 12.6 mW/°C 819 mW
P 1000 mW 8.0 mW/°C 520 mW

PW–8 525 mW 4.2 mW/°C 273 mW

PW–14 700 mW 5.6 mW/°C 364 mW

= 85°C

POWER RATING

DD±

DD

recommended operating conditions

Supply voltage, V

Operating free-air temperature, T

DD

p

IC

VDD = 3 V –0.2 1.8
VDD = 5 V –0.2 3.8

A

MIN MAX UNIT

2 8 V

–40 85 °C

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

5

TLV2332, TLV2332Y, TLV2334, TLV2334Y

TEST

†

CONDITIONS

A

VIOInput offset voltage

IC

,

mV

IIOInput offset current (see Note 4)

O

,

pA

IIBInput bias current (see Note 4)

O

,

pA

25°C

t

t

t

t

V

V

VOHHigh-level output voltage

V

100 mV

V

VOLLow-level output voltage

V

100 mV

mV

A

gg

R

100 kΩ

V/mV

CMRR

Common-mode rejection ratio

V

V

dB

k

ygj

V

1 V

dB

IDDSupply current

V

A

LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

TLV2332I electrical characteristics at specified free-air temperature

TLV2332I

PARAMETER

VO = 1 V,
V

p

α

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically .

Average temperature coefficient of

VIO

input offset voltage

p

p

Common-mode input

ICR

voltage range (see Note 5)

p

p

Large-signal differential

VD

voltage amplification

Supply-voltage rejection ratio

SVR

(∆VDD/∆VIO)

pp

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

= 1 V,
RS = 50 Ω,
RL = 100 kΩ

V

= 1 V,

VIC = 1 V
V

= 1 V,

VIC = 1 V

VIC = 1 V,

=

ID

IOH = –1 mA
VIC = 1 V,

= –

ID

IOL = 1 mA
VIC = 1 V,

=

L

See Note 6
VO = 1 V,

=

IC

ICR

RS = 50 Ω
VIC = 1 V,

RS = 50 Ω
VO = 1 V,

No load

O

IC

=

= 1 V,

,

,

,

min,

T

A

25°C 0.6 9 1.1 9

Full range 11 11

25°C to

85°C
25°C 0.1 0.1
85°C 22 1000 24 1000
25°C 0.6 0.6
85°C 175 2000 200 2000

°

Full range

25°C 1.75 1.9 3.2 3.9

Full range 1.7 3

25°C 115 150 95 150

,

Full range 190 190

25°C 25 83 25 170

Full range 15 15

25°C 65 92 65 91

Full range 60 60

25°C 70 94 70 94

Full range 65 65

25°C 160 500 210 560

Full range 620 800

VDD = 3 V VDD = 5 V

MIN TYP MAX MIN TYP MAX

1 1.7 µV/°C

–0.2

–0.2

1.8

–0.3

o

o

2

2.3

to

–0.2

–0.2

3.8

–0.3
o
4

to

UNIT

p

p

o

4.2

µ

6

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2332, TLV2332Y, TLV2334, TLV2334Y

PARAMETER

TEST CONDITIONS

T

UNIT

SR

Slew rate at unity gain

R

100 kΩ

C

L

V/µs

BOMMaximum output-swing bandwidth

OOH

,

L

,

kH

B1Unity-gain bandwidth

I

,

L

,

kH

,

,

V

I

mV,

f B1,

PARAMETER

TEST CONDITIONS

T

UNIT

V

IC

V

V

SR

Slew rate at unity gain

L

,

V/µs

V

V

BOMMaximum output-swing bandwidth

OOH

,

L

,

kH

B1Unity-gain bandwidth

I

,

L

,

kH

,

,

V

I

mV,

f B1,

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

TLV2332I operating characteristics at specified free-air temperature, VDD = 3 V

A

V

VIC = 1 V,

=

L

See Figure 34

V

n

φ

m

Equivalent input noise voltage

p

Phase margin

f =1 kHz,
See Figure 35

V

= V

RL = 100 kΩ,
V

= 10 mV, C

RL = 100 kΩ,
V

= 10 mV

10
CL = 20 pF,
See Figure 36

,

, C

= 1 V,

I(PP)

p

= 20 F,

RS = 20 Ω,

= 20 pF,

See Figure 34

= 20 pF,

See Figure 36
f = B

RL = 100 kΩ,

25°C 0.38
85°C

25°C 32
25°C 34

85°C
25°C 300
85°C 235

–40°C 42°

25°C
85°C 36°

TLV2332I operating characteristics at specified free-air temperature, VDD = 5 V

A

= 1 V,
RL = 100 kΩ,
CL = 20 pF,
See Figure 34

V

n

φ

m

Equivalent input noise voltage

p

Phase margin

f =1 kHz,
See Figure 35

V

= V

, C

RL = 100 kΩ,
V

= 10 mV, C

RL = 100 kΩ,
V

= 10 mV

10
CL = 20 pF,
See Figure 36

= 1

I(PP)

= 2.5

I(PP)

RS = 20 Ω,

= 20 pF,

See Figure 34

= 20 pF,

See Figure 36
f = B

RL = 100 kΩ,

25°C 0.43
85°C 0.35
25°C 0.40
85°C 0.32

25°C 32
25°C 55

85°C
25°C 525
85°C

–40°C 43°

25°C
85°C 38°

MIN TYP MAX

MIN TYP MAX

SLOS189 – FEBRUARY 1997

TLV2332I

0.29

nV/√Hz

32

39°

TLV2332I

nV/√Hz

45

370

40°

z

z

z

z

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

7

TLV2332, TLV2332Y, TLV2334, TLV2334Y

†

A

VIOInput offset voltage

R

50 Ω

mV

IIOInput offset current (see Note 4)

V

V

V

pA

IIBInput bias current (see Note 4)

V

1 V

V

1 V

pA

25°C

t

t

t

t

V

V

g

VOHHigh-level output voltage

V

100 mV

V

VOLLow-level output voltage

V

100 mV

mV

A

gg

R

100 kΩ

V/mV

CMRR

Common-mode rejection ratio

V

V

dB

k

ygj

V

1 V

V

1 V

dB

IDDSupply current

OIC

A

LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

TLV2334I electrical characteristics at specified free-air temperature

TLV2334I

PARAMETER TEST CONDITIONS

p

α

†

Full range is –40°C to 85°C.

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically.

Average temperature coefficient

VIO

of input offset voltage

p

p

Common-mode input voltage

ICR

range (see Note 5)

p

p

Large-signal differential

VD

voltage amplification

Supply-voltage rejection ratio

SVR

(∆VDD/∆VIO)

pp

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

VO = 1 V, VIC = 1 V,

S

RL = 100 kΩ

O

O

VIC = 1 V,

ID

IOH = –1 mA
VIC = 1 V,

ID

IOL = 1 mA
VIC = 1 V,

L

See Note 6
VO = 1 V,

IC

RS = 50 Ω
VDD = 3 V to 5 V,

IC

RS = 50 Ω
VO = 1 V, VIC = 1 V,

No load

=

= 1 V,

=

=

= –

=

=

ICR

=

,

,

= 1

IC

=

IC

,

,

,

min,

,

=

O

T

A

25°C 0.6 10 1.1 10

Full range 12 12

25°C to

85°C
25°C 0.1 0.1
85°C 22 1000 24 1000
25°C 0.6 0.6
85°C 175 2000 200 2000

°

Full range

25°C 1.75 1.9 3.2 3.9

Full range 1.7 3

25°C 115 150 95 150

Full range 190 190

25°C 25 83 25 170

Full range 15 15

25°C 65 92 65 91

Full range 60 60

25°C 70 94 70 94

,

Full range 65 65

25°C 320 1000 420 1120

Full range 1200 1600

VDD = 3 V VDD = 5 V

MIN TYP MAX MIN TYP MAX

1 1.7 µV/°C

–0.2

–0.2

1.8

–0.3

o

o

2

2.3

to

–0.2

o
4

–0.2

to

3.8

UNIT

p

p

–0.3

o

4.2

V

µ

8

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLV2332, TLV2332Y, TLV2334, TLV2334Y

PARAMETER

TEST CONDITIONS

T

UNIT

SR

Slew rate at unity gain

R

100 kΩ

C

L

V/µs

BOMMaximum output-swing bandwidth

OOH

,

L

,

kH

B1Unity-gain bandwidth

I

,

L

,

kH

,

V

I

mV,

f

B

R

L

100 kΩ

PARAMETER

TEST CONDITIONS

T

UNIT

V

IC

V

V

SR

Slew rate at unity gain

L

,

V/µs

V

V

BOMMaximum output-swing bandwidth

OOH

,

L

,

kH

B1Unity-gain bandwidth

I

,

L

,

kH

,

,

V

I

mV,

f B1,

LinCMOS LOW-VOLTAGE MEDIUM-POWER

OPERATIONAL AMPLIFIERS

TLV2334I operating characteristics at specified free-air temperature, VDD = 3 V

A

V

VIC = 1 V,

=

L

See Figure 34

V

n

φ

m

Equivalent input noise voltage

p

Phase margin

f = 1 kHz,
See Figure 35

V

= V

RL = 100 kΩ,
V

= 10 mV, C
RL = 100 kΩ,

V

= 10 mV

10
CL = 20 pF,
See Figure 36

,

, C

= 1 V,

I(PP)

p

= 20 F,

RS = 20 Ω,

= 20 pF,

See Figure 34

= 20 pF,

See Figure 36

=

,

1

=

=

25°C 0.38
85°C

25°C 32
25°C 34

85°C
25°C 300
85°C

–40°C 42°

,

25°C 39°
85°C 36°

TLV2334I operating characteristics at specified free-air temperature, VDD = 5 V

A

= 1 V,
RL = 100 kΩ,
CL = 20 pF,
See Figure 34

V

n

φ

m

Equivalent input noise voltage

p

Phase margin

f = 1 kHz,
See Figure 35

V

= V

, C

RL = 100 kΩ,
V

= 10 mV, C

RL = 100 kΩ,
V

= 10 mV

10
CL = 20 pF,
See Figure 36

= 1

I(PP)

= 2.5

I(PP)

RS = 20 Ω,

= 20 pF,

See Figure 34

= 20 pF,

See Figure 36
f = B

RL = 100 kΩ,

25°C 0.43
85°C 0.35
25°C 0.40
85°C 0.32

25°C 32
25°C 55

85°C
25°C 525
85°C

–40°C 43°

25°C 40°
85°C 38°

MIN TYP MAX

MIN TYP MAX

SLOS189 – FEBRUARY 1997

TLV2334I

0.29

nV/√Hz

32

235

TLV2334I

nV/√Hz

45

370

z

z

z

z

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

9

TLV2332, TLV2332Y, TLV2334, TLV2334Y
LinCMOS LOW-VOLTAGE MEDIUM-POWER
OPERATIONAL AMPLIFIERS

SLOS189 – FEBRUARY 1997

TLV2332Y electrical characteristics, T

PARAMETER TEST CONDITIONS

V

IO

I

IO

I

IB

V

ICR

V

OH

V

OL

A

VD

CMRR Common-mode rejection ratio

k

SVR

I

DD

NOTES: 4. The typical values of input bias current and input offset current below 5 pA are determined mathematically .

Input offset voltage
Input offset current (see Note 4) VO = 1 V, VIC = 1 V 0.1 0.1 pA

Input bias current (see Note 4) VO = 1 V, VIC = 1 V 0.6 0.6 pA
Common-mode input voltage

range (see Note 5)

High-level output voltage

Low-level output voltage
Large-signal differential voltage

amplification

Supply-voltage rejection ratio
(∆VDD/∆VID)

Supply current

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 3 V, VO = 0.5 V to 1.5 V.

VO = 1 V,
RS = 50 Ω,

VIC = 1 V,
IOH = –1 mA

VIC = 1 V,
IOL = 1 mA

VIC = 1 V,
See Note 6

VO = 1 V,
RS = 50 Ω

VO = 1 V,
RS = 50 Ω

VO = 1 V,
No load

= 25°C

A

VIC = 1 V,
RL = 100 kΩ

VID = 100 mV,

VID = 100 mV,

RL = 100 kΩ,

VIC = V

VIC = 1 V,

VIC = 1 V,

ICR

min,

TLV2332Y

VDD = 3 V VDD = 5 V

MIN TYP MAX MIN TYP MAX

0.6 1.1 mV

–0.3

to

2.3

1.9 3.9 V

115 95 mV

83 170 V/mV

92 91 dB

94 94 dB

160 210 µA

–0.3

4.2

UNIT

to

V

10

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