Outstanding Combination of DC Precision
and AC Performance:
Unity-Gain Bandwidth . . . 15 MHz Typ
V
. . . 3.3 nV/√Hz at f = 10 Hz Typ,
n
2.5 nV/√Hz
V
. . . 100 µV Typ
IO
A
. . . 45 V/µV Typ With RL = 2 kΩ
VD
38 V/µV Typ With R
D
Available in 16-Pin Small-Outline
at f = 1 kHz Typ
L
Wide-Body Package
D
Macromodels and Statistical Information
Included
D
Output Features Saturation Recovery
Circuitry
description
The TLE22x7C combines innovative circuit
design expertise and high-quality process control
techniques to produce a level of ac performance
and dc precision previously unavailable in dual
operational amplifiers. This device allows
upgrades to systems that use lower-precision
devices and is manufactured using Texas
Instruments state-of-the-art Excalibur process.
= 1 kΩ
P PACKAGE
(TOP VIEW)
1OUT
1IN–
1IN+
V
CC–
1OUT
1IN–
1IN+
V
NC – No internal connection
DW PACKAGE
(TOP VIEW)
NC
NC
CC–
NC
NC
1
2
3
4
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
8
7
6
5
9
V
2OUT
2IN–
2IN+
NC
NC
V
2OUT
2IN–
2IN+
NC
NC
CC+
CC+
In the area of dc precision, the TLE22x7C offers a typical offset voltage of 100 µV, a common-mode rejection
ratio of 115 dB (typ), a supply voltage rejection ratio of 120 dB (typ), and a dc gain of 45 V/µV (typ).
The ac performance is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55° of phase
margin, and noise voltage specifications of 3.3 nV/√Hz
and 2.5 nV/√Hz at frequencies of 10 Hz and 1 kHz,
respectively.
The TLE22x7C is available in a wide variety of packages, including the industry standard 16-pin small-outline
wide-body version for high-density system applications. This device is characterized for operation from 0°C to
70°C.
AVAILABLE OPTIONS
T
A
°
°
†
The DW package is available taped and reeled. Add R suffix to device type (e.g., TLE2227CDWR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
This chip, properly assembled, displays characteristics similar to the TLE2227C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips my be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(7)
(8)
116
(6)
(5)
(4)
1IN+
1IN–
2OUT
(3)
(2)
(7)
V
CC+
(8)
+
–
V
CC–
(4)
(1)
(5)
+
(6)
–
1OUT
2IN+
2IN–
(1)
(2)(3)
104
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLE2227, TLE2227Y, TLE2237, TLE2237Y
EXCALIBUR LOW-NOISE HIGH-SPEED
PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS184 – FEBRUARY 1997
TLE2237Y chip information
ThIs chip, when properly assembled, displays characteristics similar to TLE2237. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. The chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
116
(8)
(1)
(7)
(6)
(2)(3)
104
(5)
(4)
V
CC+
1IN+
1IN–
2OUT
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between V
2. Differential voltages are at IN+ with respect to IN–. Excessive current flows if a differential input voltage in excess of approximately
±1.2 V is applied between the inputs unless some limiting resistance is used.
3. The output can be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
Macromodel information provided was derived using Microsim
with Microsim
PSpice
. The Boyle macromodel (see Note 6) and subcircuit in Figure 49 and Figure 50 are
generated using the TLE2227C typical electrical and operating characteristics at 25°C. Using this information,
output simulations of the following key parameters can be generated to a tolerance of 20% (in most cases):
D
Maximum positive output voltage swing
D
Maximum negative output voltage swing
D
Slew rate
D
Quiescent power dissipation
D
Input bias current
D
Open-loop voltage amplification
Parts
, the model generation software used
D
Unity-gain bandwidth
D
Common-mode rejection ratio
D
Phase margin
D
DC output resistance
D
AC output resistance
D
Short-circuit output current limit
NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon,“Macromodeling of Integrated Circuit Operational Amplifiers”,
PSpice
Macromodels, simulation models, or other models provided by TI,
directly or indirectly, are not warranted by TI as fully representing all
of the specification and operating characteristics of the
semiconductor product to which the model relates.
model generation software. The Boyle
macromodel (see Note 6) and subcircuit in Figure 51 and Figure 52 are generated using the TLE2237C typical
electrical and operating characteristics at 25°C. Using this information, output simulations of the following key
parameters can be generated to a tolerance of 20% (in most cases):
D
Maximum positive output voltage swing
D
Maximum negative output voltage swing
D
Slew rate
D
Quiescent power dissipation
D
Input bias current
D
Open-loop voltage amplification
NOTE 6. G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon,“Macromodeling of Integrated Circuit Operational Amplifiers,”
V
V
of Solid-State Circuits
CC+
1
IN+
IN–
2
CC–
dp
, SC-9, 353 (1974).
3
rp
rc1
11
Q1Q2
13
lee
c1
4
rc2
14
re2re1
12
10
ve
+
vc
ceeree
dc
de
54
+–
r2
–
53
D
Unity-gain bandwidth
D
Common-mode rejection ratio
D
Phase margin
D
DC output resistance
D
AC output resistance
D
Short-circuit output current limit
99
vb
+
fb
–
C2
ga
7
vlim
ro2
8
5
hlim
OUT
+
–
ro1
90
+
–
egnd
9
+
–
6
gcm
dlp
91
+
–
dln
vlp
IEEE Journal
92
–
vln
+
Macromodels, simulation models, or other models provided by TI,
directly or indirectly, are not warranted by TI as fully representing all
of the specification and operating characteristics of the
semiconductor product to which the model relates.
The TLE22x7C circuitry includes input-protection diodes to limit the voltage across the input transistors;
however, no provision is made in the circuit to limit the current if these diodes are forward biased. This condition
can occur when the device is operated in the voltage-follower configuration and driven with a fast, large-signal
pulse. A feedback resistor is recommended to limit the current to a maximum of 1 mA to prevent degradation
of the device. Also, this feedback resistor forms a pole with the input capacitance of the device. For feedback
resistor values greater than 10 kΩ, this pole degrades the amplifier’s phase margin. This problem can be
alleviated by adding a capacitor (20 pF to 50 pF) in parallel with the feedback resistor (see Figure 53).
CF = 20 to 50 pF
IF ≤ 1 mA
R
F
V
CC+
–
V
O
V
I
+
V
CC–
Figure 53. Voltage-Follower Circuit
30
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
IMPORTANT NOTICE
T exas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. T esting and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty . Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERT AIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICA TIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERST OOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright 1998, Texas Instruments Incorporated
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