Outstanding Combination of dc Precision
and AC Performance:
Unity-Gain Bandwidth . . . 15 MHz Typ
V
n
3.3 nV/√Hz at f = 10 Hz Typ,. . . .
2.5 nV/√Hz at f = 1 kHz Typ
V
IO
A
VD
25 µV Max. . . .
45 V/µV Typ With RL = 2 kΩ,. . .
OFFSET N1
IN –
IN +
V
CC –
19 V/µV Typ With RL = 600 Ω
D
Available in Standard-Pinout Small-Outline
Package
D
Output Features Saturation Recovery
Circuitry
D
Macromodels and Statistical information
description
The TLE20x7 and TLE20x7A contain innovative
circuit design expertise and high-quality process
control techniques to produce a level of ac
performance and dc precision previously unavailable in single operational amplifiers. Manufactured using Texas Instruments state-of-the-art
Excalibur process, these devices allow upgrades
to systems that use lower-precision devices.
In the area of dc precision, the TLE20x7 and
TLE20x7A offer maximum offset voltages of
100 µV and 25 µV, respectively, common-mode
rejection ratio of 131 dB (typ), supply voltage
rejection ratio of 144 dB (typ), and dc gain of
45 V/µV (typ).
AVAILABLE OPTIONS
PACKAGED DEVICES
T
A
–
–
†
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2027ACDR).
‡
Chip forms are tested at 25°C only.
VIOmax AT
25
°C
25 µV
100 µV
25 µV
100 µV
25 µV
100 µV
SMALL
OUTLINE
TLE2027ACD
TLE2037ACD
TLE2027CD
TLE2037CD
TLE2027AID
TLE2037AID
TLE2027ID
TLE2037ID
TLE2027AMD
TLE2037AMD
TLE2027MD
TLE2037MD
†
(D)
CHIP
CARRIER
(FK)
—
—
—
—
—
—
—
—
TLE2027AMFK
TLE2037AMFK
TLE2027MFK
TLE2037MFK
NC
IN–
NC
IN+
NC
CERAMIC
DIP
(JG)
—
—
—
—
—
—
—
—
TLE2027AMJG
TLE2037AMJG
TLE2027MJG
TLE2037MJG
D, JG, OR P PACKAGE
(TOP VIEW)
1
2
3
4
FK PACKAGE
(TOP VIEW)
NC
OFFSET N1
3 2 1 20 19
4
5
6
7
8
910111213
NC
CC –
V
TLE2027ACP
TLE2037ACP
TLE2027CP
TLE2037CP
TLE2027AIP
TLE2037AIP
TLE2027IP
TLE2037IP
TLE2027AMP
TLE2037AMP
TLE2027MP
TLE2037MP
OFFSET N2
8
V
7
OUT
6
NC
5
NCNCNC
OFFSET N2
18
17
16
15
14
NC
NC
PLASTIC
DIP
(P)
CC +
NC
V
CC+
NC
OUT
NC
‡
FORM
(Y)
TLE2027Y
TLE2037Y
TLE2027Y
TLE2037Y
—
—
—
—
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
The ac performance of the TLE2027 and TLE2037 is highlighted by a typical unity-gain bandwidth specification
of 15 MHz, 55° of phase margin, and noise voltage specifications of 3.3 nV/√Hz
of 10 Hz and 1 kHz respectively . The TLE2037 and TLE2037A have been decompensated for faster slew rate
(–7.5 V/µs, typical) and wider bandwidth (50 MHz). To ensure stability, the TLE2037 and TLE2037A should be
operated with a closed-loop gain of 5 or greater.
Both the TLE20x7 and TLE20x7A are available in a wide variety of packages, including the industry-standard
8-pin small-outline version for high-density system applications. The C-suffix devices are characterized for
operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 105°C. The
M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.
This chip, when properly assembled, displays characteristics similar to the TLE202xC. Thermal compression
or ultrasonic bonding may be used on the doped-aluminum bonding pads. The chip may be mounted with
conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
(1)
V
(6)
(4)
(7)(8)
(6)
OFFSET N1
IN+
IN–
OFFSET N2
(3)
(2)
(8)
(5)
CC+
(7)
+
–
(4)
V
CC–
(6)
OUT
90
(7)
(1)(2)(3)
(8)
73
(4)
(3)
(2)
(1)
CHIP THICKNESS: 15 MILS TYPICAL
BONDING PADS: 4 × 4 MILS MINIMUM
TJmax = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
Storage temperature range, T
Case temperature for 60 seconds, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between V
2. Differential voltages are at IN+ with respect to IN–. Excessive current flows if a differential input voltage in excess of approximately
±1.2 V is applied between the inputs unless some limiting resistance is used.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
TLE20x7M operating characteristics at specified free-air temperature, V
(unless otherwise specified)
TLE20x7MTLE20x7AM
MINTYPMAXMINTYPMAX
RL = 2 kΩ,
See Figure 1
SRSlew rate at unity gain
n
V
N(PP)
n
1
OM
m
* On products compliant to MIL-PRF-38535, this parameter is not production tested.
NOTE 5: Measured distortion of the source used in the analysis was 0.002%.
Equivalent input noise
voltage (see Figure 2)
Peak-to-peak equivalent
input noise voltage
Equivalent input noise
current
Unity-gain bandwidthR
(see Figure 3)
Maximum output-swin
bandwidth
Phase margin at unityRL = 2 kΩ,
gain (see Figure 3)